|Coherent light generators patents - Monitor Patents|
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Coherent light generators May archived by USPTO category 05/12Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 05/31/2012 > 8 patent applications in 7 patent subcategories. archived by USPTO category
20120134376 - Radiation-insensitive optical fiber doped with rare earths: An optical fiber includes a central core for transmitting and amplifying an optical signal, an optical cladding to confine the optical signal transmitted by the central core, and an outer cladding. The central core is formed of a core matrix and nanoparticles. The nanoparticles are formed of a nanoparticle matrix... Agent: Draka Comteq, B.v.
20120134377 - Generator of polarization entangled photon pairs and method of generating the same: A wavelength-multiplexed polarization entangled photon pair generator (1) includes: a pump light source (2); a polarization entangled photon pair generating body (4) on which pump light (3) outputted from the pump light source (2) falls; and a spectrometer (7) on which a wavelength-multiplexed parametric photon pair (5) outputted from the... Agent: Japan Science And Technology Agency
20120134378 - Semiconductor laser driving device and image forming apparatus having the semiconductor laser driving device: A semiconductor laser driving device that drives a semiconductor laser with a driving current output from a driving current output terminal is disclosed. The semiconductor laser driving device includes a driving current monitoring terminal configured to output a driving current monitoring current having a value of 1/α of the driving... Agent:
20120134379 - Multi-beam laser power control circuit and image forming apparatus using the same: A disclosed multi-beam laser power control circuit includes a light receiving element receiving power output from semiconductor lasers to control output power of a semiconductor laser array having plural semiconductor lasers, automatic power control circuits (APC circuits) controlling emission power output from semiconductor lasers based on received corresponding automatic power... Agent: Ricoh Company, Ltd.
20120134380 - Quantum cascade laser: A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the... Agent: Hamamatsu Photonics K.k.
20120134381 - Vertical cavity surface emitting devices incorporating wafer fused reflectors: A method of forming an optoelectronic device comprising growing a first multi-layer 2 representing a reflector on a first substrate and a second multilayer 4 representing an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layer 2 to a third substrate... Agent: Ecole Polytechnique Federale De Lausanne
20120134382 - Surface emitting semiconductor laser component having a vertical emission direction: A surface emitting semiconductor laser component having a vertical emission direction includes a semiconductor body having a first resonator mirror, a second resonator mirror, and an active zone that generates radiation, wherein the first resonator mirror has alternately stacked first layers having a first composition and second layers having a... Agent: Osram Opto Semiconductors Gmbh
20120134383 - Electro-absorption modulator and optical semiconductor device: An electro-absorption modulator includes: a semiconductor substrate; and an n-type InP cladding layer, an AlGaInAs light absorbing layer, an InGaAsP optical waveguide layer, and a p-type InP cladding layer, which are sequentially laminated on the semiconductor substrate. The InGaAsP optical waveguide layer includes a plurality of InGaAsP layers with different... Agent: Mitsubishi Electric Corporation05/24/2012 > 11 patent applications in 9 patent subcategories. archived by USPTO category
20120128013 - Thulium and/or holmium doped silicate glasses for two micron lasers: A laser glass fiber with a core of the fiber comprising a silicate glass host, one or more glass network modifiers, one or more glass network intermediators, and Thulium ions, Holmium ions, or a combination of Thulium ions and Holmium ions. The fiber emits laser light from 1.7 micron to... Agent:
20120128014 - Intra-cavity frequency doubled microchip laser operating in tem00 transverse mode: A method for making a microchip laser includes preparing a laser-cavity chip assembly comprising a gain media, a first substantially flat surface, and a second substantially flat surface parallel to the first substantially flat surface. The method also includes forming a first reflective film on the first substantially flat surface... Agent:
20120128015 - Optical pumping of solid-state laser material using addressable laser array: An array of Surface Emitting Laser (SEL) elements can be used to efficiently pump a disk or rod of solid-state laser glass or crystal, or harmonic-generating crystal. Placing the laser array chip against or near the surface of this solid-state material provides very high and uniform optical power density without... Agent: Trilumina Corporation
20120128016 - Iii-nitride semiconductor laser diode: Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided... Agent: Sumitomo Electric Industries, Ltd.
20120128017 - Electrical devices formed using ternary semiconducting compounds: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V;... Agent: The Board Of Trustees Of The Leland Stanford Junior University
20120128018 - Interband cascade lasers: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy
20120128019 - Monolithically integrated multi-wavelength high-contrast grating vcsel array: Multiple-wavelength VCSEL array apparatus and method having a high contrast grating (HCG) mirror which can be implemented on a single substrate in which only the dimensions of the HCG (e.g., duty cycle or the period) need be changed to alter the wavelength of a given VCSEL in response to changing... Agent: The Regents Of The University Of California
20120128020 - Vertical cavity surface emitting laser with active carrier confinement: It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.... Agent: Koninklijke Philips Electronics N.v.
20120128021 - Light emitting device and package component: A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and... Agent: Shinko Electric Industries Co., Ltd.
20120128022 - Ceramic gas laser having an integrated beam shaping waveguide: A laser may comprise a ceramic body defining a chamber therein containing a laser gas. The ceramic body may include a plurality of parallel walls that partially define a first section of the chamber, the first section of the chamber defining a waveguide. The ceramic body may further include a... Agent:
20120128023 - Switchable dual wavelength solid state laser: The present invention relates to a switchable dual wavelength solid state laser with a solid state gain medium (1) which is selected to emit optical radiation at a first wavelength with a first polarization and of at least a second wavelength with a second polarization different from said first polarization... Agent: Koninklijke Philips Electronics N.v.05/17/2012 > 10 patent applications in 8 patent subcategories. archived by USPTO category
20120120971 - Yb: and nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems: The invention describes classes of robust fiber laser systems usable as pulse sources for Nd: or Yb: based regenerative amplifiers intended for industrial settings. The invention modifies adapts and incorporates several recent advances in FCPA systems to use as the input source for this new class of regenerative amplifier.... Agent: Imra America, Inc.
20120120972 - Quantum cascade lasers with electrically tunable emission wavelengths: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser... Agent:
20120120973 - Laser selector mechanism: An amusement attraction may have a laser input device where a user may wave several fingers or make repeated motions to break a laser beam in a predefined pattern. The pattern may be recognized by a controller to perform a specific function. In one embodiment, a maintenance technician may use... Agent: Z-image, LLC
20120120976 - 3d optoelectronic packaging: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes... Agent: International Business Machines Corporation
20120120974 - 6 khz and above gas discharge laser system: A system and method of operating a high repetition rate gas discharge laser system. The system includes a gas discharge chamber having a hot chamber output window heated by the operation of the gas discharge laser chamber, an output laser light pulse beam path enclosure downstream of the hot chamber... Agent:
20120120975 - Diode-pumped cavity: A side-pumped, diode-pumped solid-state laser cavity includes a conductively cooled housing having an opening for pump radiation from a diode array in close proximity to a laser rod. The pump light is absorbed by the rod and excites the laser ions. The cavity includes a thin, diffuse reflector encircling the... Agent: Israel Aerospace Industries Ltd.
20120120977 - Vertical-cavity surface-emitting lasers with non-periodic gratings: Various embodiments of the present, invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating. In one embodiment, a surface-emitting laser comprises a grating layer (112) configured with a non-periodic, sub-wavelength grating (122), a reflective layer, and a light-emitting layer (102) disposed between... Agent:
20120120978 - 3d optoelectronic packaging: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes... Agent: International Business Machines Corporation
20120120979 - Solid dye resonator, and solid dye laser handpiece comprising same: The present invention relates to a solid dye resonator, and to a solid dye laser hand piece comprising same. The solid dye resonator comprises: solid dye; a high-reflection mirror; an output coupler; a first mounting plate on which the high-reflection mirror is mounted; a second mounting plate which is spaced... Agent: Lutronic Corporation
20120120980 - Molecular hydrino laser: This invention comprises a laser based on hydrogen molecules designated H2(1/p) wherein the internuclear distance of each is about a reciprocal integer p times that of ordinary H2. The H2(1/p) molecules are vibration-rotationally excited and lase with a transition from a vibration-rotational level to another lower-energy-level other than one with... Agent:05/10/2012 > 15 patent applications in 15 patent subcategories. archived by USPTO category
20120113994 - Low noise raman laser device, raman laser system and associated method: a Raman medium (3) exhibiting at least one Stokes shift ΔυR, such as to convert the emission at the excitation wavelength λS into a continuous emission at a Raman wavelength λR. The amplifying medium and the Raman medium belong to a Raman cavity resonant at the excitation wavelength λS and... Agent: Oxxius
20120113995 - Measuring crystal site lifetime in a non-linear optical crystal: The present invention includes a fundamental laser light source configured to generate fundamental wavelength laser light, an optical crystal configured to receive fundamental laser light from the fundamental laser light source, the optical crystal configured to generate alternate wavelength light by frequency converting a portion of the received fundamental laser... Agent: Kla-tencor Corporation
20120113996 - Line-projection apparatus for arrays of diode-laser bar stacks: In optical apparatus for illuminating a mask-plane with a line of light, a light source includes four fast-axis stacks of laser diode bars with fast and slow axis collimating arrangements providing four collimated beams of diode-laser light. A combination of a lens element and two diffraction gratings collects the four... Agent: Coherent, Inc.
20120113997 - System and method for voice control of medical devices: A medical device includes an insertable portion capable of being inserted into an orifice associated with a body of a patient. The insertable portion comprising an automated head unit capable of being manipulated in at least two axes of motion based at least in part on one or more control... Agent: Cheetah Omni, LLC
20120113998 - Multibeam coherent laser diode source (embodiments): A multibeam coherent laser diode source comprises a master laser, a linear amplifier and two perpendicular amplifiers. The master laser and amplifiers are in the form of a single heterostructure containing an active layer, two limiting layers and a radiation influx area with an influx layer. The heterostructure is characterized... Agent: General Nano Optics Limited
20120113999 - Driver for laser diode implemented with offset control: A driver circuit for an LD is disclosed. The circuit includes a decision unit, an offset adjustor, and an amplifier each having the differential configuration in an embodiment. The decision unit decides and generates a signal LOS that distinguishes the existence/absence of the input signal. The offset adjustor, depending on... Agent: Sumitomo Electric Industries, Ltd.
20120114000 - Method of manufacturing semiconductor optical device, method of manufacturing semiconductor optical laser element, and semiconductor optical device: A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the... Agent: Furukawa Electric Co., Ltd.
20120114001 - Hybrid ridge waveguide: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally... Agent:
20120114002 - Group iii nitride semiconductor laser diode, and method for producing group iii nitride semiconductor laser diode: Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be... Agent: Sumitomo Electric Industries, Ltd.
20120114003 - Laser device, a light signal generation device, and an optical resonator and a method for producing light: A laser device includes a ridge waveguide having an active layer between upper and lower cladding layers. A ridge formed in the upper cladding layer defines the width of a light guiding region in the active layer, and is formed so that a portion of the light guiding region extends... Agent: Undivided Trinity Of Queen Elizabeth, Near Dublin
20120114004 - Nitride semiconductor laser device and method of manufacturing the same: A nitride semiconductor laser device includes a first semiconductor layer, an active layer, a second semiconductor layer having a ridge portion and a planar portion, a first electrode formed above the ridge portion, and a dielectric film formed on the side wall portion of the ridge portion. A region from... Agent: Panasonic Corporation
20120114005 - Surface-emitting laser and surface-emitting laser array, method of manufacturing a surface-emitting laser and method of manufacturing a surface-emitting laser array, and optical apparatus including a surface-emitting laser array: Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer... Agent: Canon Kabushiki Kaisha
20120114006 - Surface emitting laser: A surface emitting laser emitting a laser beam in a single transverse mode irrespective of an emission area while one-dimensionally aligning polarization of the output beam, including a two-dimensional photonic crystal, having resonance modes in directions of the primitive translation vector a1 and a2, lengths |a1| and |a2| of the... Agent: Canon Kabushiki Kaisha
20120114007 - Underwater laser-guided discharge: Methods for producing a laser-guided underwater electrical discharge are provided. One or more electrodes defining a desired electrical discharge path are situated in a body of water and are attached to an external electrical power supply. A high-powered, intense laser beam is fired into the water. The laser beam forms... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy
20120114008 - Transverse pumped laser amplifier architecture: An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first... Agent: Lawrence Livermore National Security, LLC05/03/2012 > 11 patent applications in 10 patent subcategories. archived by USPTO category
20120106577 - Method for generating free electrons and free-electron laser system using the interaction with a laser undulator: The disclosure relates to a free-electron laser system and a method for generating a packet of relativistic electrons capable of propagating in a first propagation direction (Oz), and a device for generating an undulator beam capable of interacting with the packet of relativistic electrons. In the system, the undulator beam... Agent: Centre National De La Recherche Scientifique - Cnrs
20120106579 - Precise broadband frequency modulated laser: A method, apparatus and computer-readable storage medium are described for a tunable laser source that produces a desired frequency modulated optical waveform with a precision within 0.01 percent over a bandwidth greater than about 50 gigaHertz. An apparatus includes a tunable laser having one or more drive inputs for affecting... Agent: Montana State University
20120106578 - Wavelength-tunable external cavity laser generating device: A wavelength-tunable external cavity laser generating device is provided. The wavelength-tunable external cavity laser generating device includes a reflection-type multi-mode interferometer, an optical amplifier disposed between the reflection-type multi-mode interferometer and an external wavelength-tunable reflector to amplify light, and an optical signal processor configured to process light from the reflection-type... Agent: Electronics And Telecommunications Research Institute
20120106580 - Optical systems for laser arrays: Surface emitting laser arrays with intra-cavity harmonic generation are coupled to an optical system that extracts harmonic light in both directions from an intra-cavity nonlinear optical material in such a way that the focusing properties of the light beams are matched.... Agent: Alces Technology, Inc.
20120106581 - Laser processing method: The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance... Agent: Sumitomo Electric Industries, Ltd.
20120106582 - Heat sink for a pulsed high-power laser diode: A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that... Agent:
20120106583 - Vertically-coupled surface-etched grating dfb laser: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of... Agent: Onechip Photonics Inc.
20120106584 - Semiconductor laser apparatus and optical apparatus: This semiconductor laser apparatus includes a base, a plurality of electrodes arranged along a first direction on an upper surface of the base, a plurality of semiconductor laser devices bonded to respective upper surfaces of the plurality of electrodes, emitting laser beams in a second direction, and a photodetector having... Agent: Sanyo Electric Co., Ltd.
20120106585 - High fill-factor efficient vertical-cavity surface emitting laser arrays: An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar... Agent:
20120106586 - Rf-excited laser assembly: A radio frequency (RF) excited laser assembly includes a pair of opposed electrodes defining an inter-electrode gap and a conductive termination bridge in electrical contact with both electrodes. The termination bridge mechanically supports and positions the electrodes relative to each other and provides a termination impedance for an RF voltage... Agent: Trumpf, Inc.
20120106587 - Vertical cavity surface emitting laser and image forming apparatus: Provided is a vertical cavity surface emitting laser that includes a plurality of laminated semiconductor layers including an active layer and that oscillates at a wavelength λ1, wherein a resonator is formed by upper and lower multilayer reflecting mirrors has a structure that generates a longitudinal multimode, and the first... Agent: Canon Kabushiki KaishaPrevious industry: Multiplex communications
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