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Coherent light generators December patent applications/inventions, industry category 12/11

20110317725 - Laser power switching for alignment purposes in a laser printer: An apparatus for switching and controlling the intensity of a laser beam directed toward a beam detect sensor for an image forming device. A printing power reference signal and a beam detect power reference signal is selectively connected to a laser driver through a first switch. A printing power reference... Agent:

20110317726 - Laser apparatus: The present invention relates to a laser apparatus with a structure for realizing a fast response in carrying out a start and an end of output of pulsed laser light while effectively suppressing damage to an optical amplifying medium. The laser apparatus is provided with a seed light source, an... Agent: Sumitomo Electric Industries, Ltd.

20110317727 - Wavelength conversion light source, optical element and image display device: A wavelength conversion laser light source, including a solid-state laser medium configured to generate fundamental light; a wavelength conversion element configured to convert the fundamental light into second harmonic light which has a higher frequency than the fundamental light; and a conductive material in contact with the wavelength conversion element,... Agent:

20110317728 - Laser safety viewing window: An apparatus includes a window to absorb and/or reflect a radiation of a laser light. The apparatus may include a continuous material affixed to the window to transfer energy through the continuous material in a continuous pattern such that an alteration of the continuous material from the laser light of... Agent: Telesis Technologies, Inc.,

20110317729 - Current driving device: A current driving device comprises; a three-terminal regulator configuration circuit operative as a three-terminal regulator which drops a voltage of a first electric power supply to a predetermined target output voltage in a state where a main terminal and a control terminal of a power transistor are connected to a... Agent:

20110317730 - Diode laser type device: Applicant requests that the original specification and claims be replaced with the new specification and claims submitted herewith corrected along the lines suggested by the initial examining personel. The papers submitted herewith have additional corrections, namely the addition of paragraph numbers, [0003], etcetera. The new papers do not contain any... Agent:

20110317731 - Semiconductor device: A semiconductor laser includes a P-type InP substrate and a P-type InP cladding layer, an AlGaInAs strained quantum well active layer, an N-type InP cladding layer, a P-type InP buried layer, an N-type InP buried layer, a P-type InP buried layer, an N-type InP layer, an N-type InP contact layer,... Agent: Mitsubishi Electric Corporation

20110317732 - Edge emitting semiconductor laser: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also... Agent: Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

20110317733 - Nitride semiconductor laser chip and method of fabrication thereof: A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically... Agent: Sharp Kabushiki Kaisha

20110317734 - Spatial filters: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.... Agent:

20110317735 - Semiconductor laser module and manufacturing method therefor: A light-emitting element mount (4) is fixed onto a base (8), and a semiconductor laser element (1) is fixed onto the light-emitting element mount (4). An anchor member (5), which is in the shape of a roughly rectangular plate, is fixed onto the base (8). An optical fiber (2) is... Agent:

20110317736 - Linear cavity of all-fiber-based ultra short pulse laser system: A linear-cavity all-fiber-based ultra short pulse laser system is provided. The all-fiber-based ultra short pulse laser system includes a pulse pump light source, a gain fiber, a first fiber signal pump combining unit, a broadband optical isolator, a fiber saturable absorber, an assistant light source, a second fiber signal pump... Agent: Industrial Technology Research Institute

20110310913 - Optical fiber laser, and components for an optical fiber laser, having reduced susceptibility to catastrophic failure under high power operation: Optical fiber lasers and components for optical fiber laser. An optical fiber laser can comprise a fiber laser cavity having a wavelength of operation at which the cavity provides output light, the cavity including optical fiber that guides light having the wavelength of operation, the fiber having first and second... Agent: Nufern

20110310914 - Mode-locking with reduced nonlinearity using gain-matched output couplers: A laser cavity includes a gain medium for amplifying a light pulse in a light path, wherein the gain medium has a gain profile for amplifying the light pulse as a function of wavelength; at least one mirror on one side of the gain medium; and an output coupler. The... Agent: Massachusetts Institute Of Technology

20110310915 - Methods and apparatus for single-mode selection in quantum cascade lasers: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top... Agent: President And Fellows Of Harvard College

20110310916 - Semiconductor laser module: A semiconductor laser module includes a semiconductor device including a semiconductor laser and a bending waveguide through which a laser light emitted from the semiconductor laser propagates, a beam splitter splitting the laser light into a first laser light and a second laser light, a plurality of detectors respectively arranged... Agent: Furukawa Electric Co., Ltd.

20110310917 - Multiple-wavelength laser: In a multiple-wavelength laser source, a multiple-mode laser outputs a set of wavelengths in a range of wavelengths onto an optical waveguide, where a spacing between adjacent wavelengths in the set of wavelengths is smaller than a width of channels in an optical link. Furthermore, a set of ring-resonator filters... Agent: Oracle International Corporation

20110310918 - Laser module: Provided is a laser module. The laser module comprises: a substrate; an gain unit oscillating a laser light on the substrate; an external resonance reflecting unit total-reflecting the laser light at an external of the substrate adjacent to one side of the gain unit; and an inner resonance reflecting unit... Agent: Electronics And Telecommunications Research Institute

20110310919 - Laser system provided with a frequency servo: The invention relates to a laser system provided with a laser radiation device (1) in which the radiation frequency is controlled by a heterodyne servo circuit particularly using an interferometric circuit (15). Said interferometric circuit comprises a coil of optical fibres (17) which provide a reference for correcting the laser... Agent: Centre National De La Recherche Scientifique

20110310920 - Epitaxial growth of in-plane nanowires and nanowire devices: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective... Agent: Stc.unm

20110310921 - Wavelength beam combining laser with multiple outputs: A system and method for producing a multi-output laser by reconfiguring and apportioning a plurality of electromagnetic beams produced by various wavelength beam combining techniques. The reconfiguring of beams includes individual rotation and selective repositioning of one or more beams with respect to beam's original input position.... Agent: Teradiode, Inc.

20110310922 - Laser resonator: One embodiment of a laser resonator comprises one or more laser resonator components, a container and an ozone generator. The laser resonator components include a non-linear crystal, a beam polarization combiner, an optical lens, a mirror and/or an optical grating. The container encloses the one or more laser resonator components.... Agent: Ams Research Corporation

20110305249 - Fiber laser system with controllably alignable optical components thereof: The present disclosure relates to a modular fiber laser system operative to controllably guide a beam which is launched from a feeding fiber into a process fiber so that the high-aperture component is coupled and guided in cladding of the process fiber, and a low-aperture component is coupled into the... Agent: Ipg Photonics Corporation

20110305251 - Multi-cladding optical fiber, optical fiber module, fiber laser, and fiber amplifier: Provided is a multi-cladding optical fiber which includes: a core with an average refractive index n1; and a cladding including an inner cladding with an average refractive index n2 formed on the periphery of the core, an intermediate cladding with an average refractive index n3 formed on the periphery of... Agent: Fujikura Ltd.

20110305250 - Wavelength beam combining based pulsed lasers: A system for producing a laser pulse includes a laser driver capable of direct modulation of a laser source comprising a plurality of lasers, and a wavelength beam combining cavity, comprising the directly modulated laser source, for producing a wavelength beam combining output of light from the plurality of lasers.... Agent: Teradiode, Inc.

20110305252 - Method and apparatus for the adjustment of a laser head: The invention relates to a method for the adjustment of the beam axis of a laser head and an apparatus for this purpose. The method includes the steps of introducing the laser head (3) into a mounting (8), determining the set/actual deviation of the beam axis (2), determining of motions... Agent: Rena Gmbh

20110305253 - Semiconductor laser module: A semiconductor laser module includes a semiconductor laser section, a light selecting section, and an optical converting section. The semiconductor laser section includes a semiconductor laser substrate, a plurality of semiconductor laser elements mounted on the semiconductor laser substrate, and a first temperature adjusting element for adjusting temperature of the... Agent: Furukawa Electric Co., Ltd.

20110305254 - Optical transmission device: An optical transmission device includes: a substrate on which an element portion that includes a semiconductor layer transmitting or receiving an optical signal, and a support portion that includes a conductive semiconductor layer are formed; an optical transmission member that is arranged to face the element portion and the support... Agent: Fuji Xerox Co., Ltd.

20110305255 - Semiconductor optical integrated element and method for manufacturing the same: A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having... Agent: Mitsubishi Electric Corporation

20110305256 - Wavelength beam combining based laser pumps: A method of direct diode pumping a fiber laser includes disposing a plurality of diode lasers in a wavelength beam combining cavity for generating a wavelength beam combining laser output, and optically coupling the wavelength beam combining laser output to the gain medium of a fiber laser. The wavelength beam... Agent: Teradiode, Inc.

20110299557 - Side fire laser assembly with diffractive portion: Embodiments include an apparatus including an optical fiber having a distal end with a distal surface configured to emit a beam of energy at an angle relative to a longitudinal axis of the optical fiber. The apparatus also includes a tube including a channel and a diffractive portion. The distal... Agent: Boston Scientific Scimed, Inc.

20110299558 - Method and system for generating laser pulses: The invention inter alia relates to a method of generating laser pulses having a predefined amplitude, phase and/or polarization at a distal end of an optical transmission system, which comprises at least one optical fiber, the method comprising the steps of: generating laser pulses and inputting the laser pulses into... Agent: Freie Universit+e,uml A+ee T Berlin

20110299559 - Optical device: When environmental temperature becomes low, the quantity of light of the backward output light irradiated onto a light absorber formed on a mount over which a chip is mounted, is increased by a light quantity adjuster, to increase the optical absorption by the light absorber, thereby raising its temperature. As... Agent: Fujitsu Optical Components Limited

20110299560 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary... Agent: Sumitomo Electric Industries, Ltd.

20110299561 - Semiconductor laser silicon waveguide substrate, and integrated device: A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region... Agent: Fujitsu Limited

20110292951 - Fiber light source with high mean wavelength stability and reliability: A broadband light source configured to emit a stable broadband optical beam is provided. The broadband light source includes at least one optical pump source, an optical system including a polarization beam combiner, and a solid state laser medium. The optical system is configured to receive at least one optical... Agent: Honeywell International Inc.

20110292952 - Laser device with high average power fiber: The disclosure relates to a laser device having a fibre emitting a single-mode transverse radiation controlled at a given wavelength, which includes: at least one laser diode capable of emitting a pump wave and a sheathed amplifying optic-fibre segment having two ends, the amplifying optic fibre including a core and... Agent: Centre National De La Recherche Scientifique (cnrs)

20110292954 - Automated bandwidth / wavelength adjustment systems and methods for short pulse lasers and optical amplifiers: Embodiments are directed to systems and methods for adjusting a wavelength, bandwidth or both. Such systems and methods may be applicable to laser beams within a laser cavity or amplifier. For some embodiments, such systems and methods may be used to allow a user to set a desired wavelength and... Agent:

20110292953 - Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing: Techniques, devices and systems for optical communications based on wavelength division multiplexing (WDM) that use tunable multi-wavelength laser transmitter modules.... Agent: Google Inc.

20110292955 - Tunable semiconductor laser diode: A tunable LD with reduced number of the butt joint is disclosed. The tunable LD includes the reflector and a waveguide core. The reflector includes a plurality of segments each having a grating region and a space region adjacent to the grating region. The waveguide core includes a gain region... Agent: Sumitomo Electric Industires, Ltd.

20110292956 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed... Agent: Sumitomo Electric Industries, Ltd.

20110292957 - Gan-based laser diodes with misfit dislocations displaced from the active region: A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×106/cm2. The strain-thickness... Agent:

20110292958 - Enhanced planarity in gan edge emitting lasers: A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side... Agent:

20110292959 - Semiconductor laser device and method for fabricating the same: A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge stripe portion and a second scribed level-different portion formed in each side... Agent:

20110292960 - Wavelength tunable semiconductor laser: A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes:... Agent: Sumitomo Electric Industries, Ltd.