SEARCH:      Monitor Keywords |  Custom RSS

Coherent light generators October categorized by USPTO classification 10/11

20110261843 - Grating external-cavity semiconductor laser and quasi-synchronous tuning method thereof: A method for quasi-synchronous tuning of wavelength or frequency of grating external-cavity semiconductor laser and a corresponding semiconductor laser are provided. A grating or mirror is rotated around a quasi-synchronous tuning point (Pq) as rotation center, so as to achieve the frequency selections by grating and resonance cavity in quasi-synchronous... Agent:

20110261844 - Laser system: The higher efficiency and lower power consumption are realized in a laser system for generating a high-power short-pulse laser beam. The laser system includes a laser oscillator for generating a pulse laser beam by laser oscillation, plural amplifiers for sequentially inputting the pulse laser beam generated by the laser oscillator... Agent: Komatsu Ltd.

20110261845 - Chirp compensation and sbs suppression using a multi-section laser: A method includes driving a multi-section laser, wherein each section is electrically isolated from an adjacent section with sufficient resistance so that current through each section is contained substantially in that section. An apparatus includes a multi-section laser, wherein each section is electrically isolated from an adjacent section with sufficient... Agent:

20110261846 - Vertical cavity surface emitting laser apparatus: A surface emitting laser apparatus includes an arithmetic processing unit including an I/O unit for externally inputting an instruction and a core unit that performs an operation based on the instruction and outputs a differential voltage signal modulated with a predetermined amplitude according to a result of the operation, capacitors... Agent: Furukawa Electric Co., Ltd.

20110261847 - Light emitting devices: A light emitting device includes a number of light emitting chips, a substrate to support the light emitting chips, a patterned first conductive layer over the substrate to facilitate radiation and reflection of light from the light emitting chips, and a patterned second conductive layer on the patterned first conductive... Agent:

20110261848 - Optical semiconductor device and method of manufacturing optical semiconductor device: A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located... Agent: Sumitomo Electric Device Innovations, Inc.

20110261851 - Light emitting system according to a polariton mode with electrical injection of quantum wells: A light (2) emitting system (1) includes an optical cavity (10) having at least one optical mode and including at least one transmissive reflector (12), a first set (20) of quantum wells (21, 22) and elements (31, 32, 33) of electrical injection of the quantum wells of the first set.... Agent: Centre National De La Recherche Scientifique-cnrs

20110261853 - Nitride semiconductor device and method for fabricating the same: A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect... Agent: Panasonic Corporation

20110261852 - Semiconductor laser element and manufacturing method thereof: A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer... Agent: Furukawa Electric Co., Ltd

20110261849 - Semiconductor light emitting element and method of manufacturing thereof: A semiconductor light emitting element comprising: a buffer layer that is grown by using a growth substrate including ZnO, the buffer layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a nitrogen polar plane; and an active layer that... Agent: Furukawa Electric Co., Ltd.

20110261850 - Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where... Agent: Ricoh Company, Ltd.,

20110261854 - Semiconductor laser and manufacturing method thereof: A semiconductor laser includes a semiconductor substrate and a resonator formed over the semiconductor substrate and containing a nitride semiconductor layer. A strain exerting on a region near the facet of the resonator is smaller than a strain exerting on the region between the regions near the facet.... Agent: Renesas Electronics Corporation

20110261855 - Optical semiconductor device and method of manufacturing optical semiconductor device: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted... Agent: Sumitomo Electric Device Innovations, Inc.

20110261856 - Vertical-cavity surface-emitting laser: A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section configured to have a relatively high reflection coefficient to cause light to... Agent:

20110255561 - Apparatus configured to provide a wavelength-swept electro-magnetic radiation: Exemplary embodiments of apparatus according to the present disclosure are provided. For example, an apparatus for providing electromagnetic radiation to a structure can be provided. In one exemplary embodiment, the apparatus can provide at least one electromagnetic radiation, and include at least one first arrangement which can be configured to... Agent: The General Hospital Corporation

20110255562 - Plane waveguide type laser and display device: A plane waveguide type laser according to the present invention includes: a plate-shaped laser medium (5); a semiconductor laser (1) which causes excitation light to enter an end surface (5a) of the laser medium (5); first and second claddings (4a and 4b) which are bonded to lower and upper surfaces... Agent: Mitsubishi Electric Corporation

20110255563 - Pulse shaper and laser with pulse shaper: A pulse shaper for compensating group runtime effects is provided. The pulse shaper comprising a first and a second dispersive element. An optical pulse can be coupled to the pulse shaper along a coupling direction such that said pulse exits from the pulse shaper after passing through the first and... Agent: Freie Universitaet Berlin

20110255564 - Image display device and laser light source device: An image display device including a laser light source device that includes: laser elements of different output wavelengths; a pulse signal generating unit that generates pulse signals based on a video signal; a laser driving unit that drives the laser elements in synchronization with the pulse signals; an optical combining... Agent:

20110255565 - Laser light detection circuit: The invention provides a laser light detection circuit that prevents a peak output occurring when the circuit switches between the operation stop mode and the operation mode so as to prevent the breakdown or malfunction of the next-connected circuit. A laser light detection circuit has a differential amplifier that amplifies... Agent: On Semiconductor Trading, Ltd.

20110255566 - Method for deriving precise control over laser power of an optical pickup unit, and associated automatic power calibration circuit: A method for deriving precise control over laser power of an optical pickup unit (OPU) includes: providing an analog-to-digital converter (ADC) within an automatic power calibration (APC) circuit to derive a path gain and/or a path offset from the APC circuit; and selectively performing compensation according to the gain and/or... Agent:

20110255567 - Laser diodes comprising qwi output window and waveguide areas and methods of manufacture: In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI... Agent:

20110249689 - Devices, systems, and methods providing micro-ring and/or micro-racetrack resonator: Provided herein are certain embodiments of systems, methods and devices for Raman lasers based on micro-ring and mircro-racetrack resonators, and the manufacturing thereof. For example, a device can be provided which is structured to receive an electro-magnetic radiation including a resonator arrangement which has a distance from one edge thereof... Agent: The Trustees Of Columbia University In The City Of New York

20110249690 - External cavity wavelength tunable laser device and optical output module: In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range... Agent: Nec Corporation

20110249691 - Method and apparatus for controlling light bandwidth: An apparatus includes a light source that produces a light beam, a bandwidth measurement system, a plurality of bandwidth actuation systems, and a control system. Each bandwidth actuation system includes one or more bandwidth actuators and each bandwidth actuation system is connected to an optical feature that is optically coupled... Agent: Cymer Inc.

20110249692 - Beam diagnostics and feedback system and method for spectrally beam-combined lasers: Apparatus and method for control of lasers (which use an array of optical gain fibers) in order to improve spectrally beam-combined (SBC) laser beam quality along the plane of the SBC fiber array via spectral-to-spatial mapping of a portion of the spectrally beam-combined laser beams, detection of optical power in... Agent: Lockheed Martin Corporation

20110249693 - Method of driving semiconductor laser: The present invention provides a method of driving a semiconductor laser, where the method can control changes in the internal temperature of a device as well as control optical output using a driving current. A method of driving a semiconductor laser includes steps of: preliminary driving the semiconductor laser by... Agent: Canon Kabushiki Kaisha

20110249694 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the... Agent: Mitsubishi Electric Corporation

20110249695 - Optically pumped laser: Concepts of the present disclosure may be employed to optimize optical pumping and ensure high modal gain in the active region of an optically pumped laser source by establishing an optical coupling gap such that the pump waveguide mode field overlaps the active gain region associated with the signal waveguide.... Agent:

20110249696 - Laser diode: There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a columnar mesa including a first multilayer film reflecting mirror, an active layer, and a second multilayer... Agent: Sony Corporation

20110249697 - Push-pull modulated coupled vertical-cavity surface-emitting lasers and method: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has... Agent:

20110249698 - Polarization maintaining multi-pass imaging system for thin-disk amplifiers and oscillators: Multi-pass optical imaging apparatus includes a concave mirror in combination with two retro-reflecting mirror pairs and at least one reflective surface. The mirror, the retro-reflecting minor pairs and the reflecting surface are arranged such that a light-ray input into the apparatus parallel to and spaced apart from the optical axis... Agent: Coherent, Inc.

20110243158 - Microcrystal laser for generating laser pulses: A microcrystal laser for generating laser pulses has a laser resonator which has a laser medium arranged between two mirrors; and an arrangement for stabilizing the optical path length is provided. The laser resonator has a saturable absorber medium for pulse generation.... Agent: Innolight Innovative Laser Und Systemtechnik Gmbh

20110243160 - Frequency tuneable laser device: A frequency tuneable or chirped laser device is described that includes a laser cavity formed from a plurality of optical components. The optical components include a laser source for generating a beam of light, a spectral tuning element and one or more further optical components for directing the beam of... Agent: Renishaw PLC

20110243159 - Method and system for tunable pulsed laser source: A tunable pulsed laser source comprising a seed source adapted to generate a seed signal and an optical circulator. The optical circulator includes a first port coupled to the seed source, a second port, and a third port. The laser source also includes an amplitude modulator characterized by a first... Agent: Pyrophotonics Lasers Inc.

20110243161 - Frequency conversion of a laser beam using a partially phase-mismatched nonlinear crystal: The invention relates to a laser system including a nonlinear crystal having a first length portion and a second length portion. The nonlinear crystal disposed to receive input light from the laser for converting the input light into frequency converted light; wherein the nonlinear crystal is configured so that the... Agent: Jds Uniphase Corporation

20110243162 - Infrared ray transmissive optical member and manufacturing method thereof, optical device, and optical apparatus: An optical member made of polycrystalline silicon formed from high-purity trichlorosilane as a raw material, and that absorbs and scatters an infrared ray in a wavelength region of 4 μm or less. In the optical member, a ratio A/B between a transmittance A of an infrared ray having a wavelength... Agent: Tokuyama Corporation

20110243163 - Wedge-faceted nonlinear crystal for harmonic generation: Lasers and laser systems generate different wavelengths by nonlinear sum or difference frequency conversion. A wedge-faceted nonlinear crystal compensates for the spatial walk-off phenomenon associated with critical phase matching of a nonlinear crystal in the production of harmonic laser output at peak power.... Agent: Electro Scientific Industries, Inc.

20110243164 - Phased laser array with tailored spectral and coherence properties: Architectures for coherently combining an array of fiber-based lasers are provided. By matching their lengths to within a few integer multiples of a wavelength, the spatial and temporal properties of a single large laser are replicated, while extending the average or peak pulsed power limit.... Agent:

20110243165 - Laser device that stably controls very low laser power: A laser device comprises: first and second laser excitation regions that are disposed in series each other; a first power supply unit (PSU1) that injects a first energy into the first laser excitation region; and a second power supply unit (PSU2) that injects a second energy into the second laser... Agent: Fanuc Corporation

20110243166 - High-gain diode-pumped laser amplifier: A laser amplifier includes a laser active slab with a source of pump power to amplify an input laser beam, the laser active slab including a block of laser active material having opposed lateral faces defining a wedge lateral dihedral angle, opposed longitudinal faces, and opposed parallel transverse faces, the... Agent:

20110243167 - Temperature measurement and control for laser and light-emitting diodes: The existing diodes in an LED or laser diode package are used to measure the junction temperature of the LED or laser diode. The light or laser emissions of a diode are switched off by removing the operational drive current applied to the diode package. A reference current, which can... Agent: Microsoft Corporation

20110243168 - Gas laser oscillator having function for judging dischage initiation: A gas laser oscillator capable of initiating discharge, without applying excess voltage to a discharge tube, and correctly and rapidly judging the initiation of discharge. The oscillator has a laser power commanding part adapted to generate a laser power command including a pulse superimposed on a forefront of each step,... Agent: Fanuc Corporation

20110243170 - Direct modulated modified vertical-cavity surface-emitting lasers and method: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has... Agent:

20110243169 - Edge emitting semiconductor laser chip: An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body.... Agent: Osram Opto Semiconductors Gmbh

20110243171 - Nitride-based semiconductor laser device: This nitride-based semiconductor laser device includes an active layer made of a nitride-based semiconductor and a p-type cladding layer, made of a nitride-based semiconductor, formed on the active layer. The refractive index in a region of the p-type cladding layer closer to the active layer is lower than the refractive... Agent: Sanyo Electric Co., Ltd.

20110243172 - Aluminum gallium nitride barriers and separate confinement heterostructure (sch) layers for semipolar plane iii-nitride semiconductor-based light emitting diodes and laser diodes: A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.... Agent: The Regents Of The University Of California

20110243173 - Mqw laser structure comprising plural mqw regions: Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells... Agent:

20110243174 - Semiconductor light-emitting device: There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the... Agent: Sony Corporation

20110243175 - Segmented distributed feedback laser: The present invention provides for a semiconductor laser having a narrow linewidth and low power consumption for optical communication applications. According to various embodiments of the invention, a semiconductor laser is provided which includes a grating layer comprising a plurality of segmented gratings, each including a non-grating portion and a... Agent:

20110243176 - Integrating and aligning laser chips on sliders for hamr applications: A method of producing a slider wafer populated with electromagnetic components optically aligned with photonic elements for HAMR applications. Laser chips are transferred from a laser substrate wafer to the slider wafer by a massively parallel printing transfer process. After wafer bonding the laser chips to the slider wafer, the... Agent: Seagate Technology LLC

20110243177 - Gas laser device: A gas laser device including a blower circulating a laser gas along a gas passage; a pressure detection section detecting a gas pressure of the laser gas in the gas passage; a gas supply and exhaust section supplying the laser gas to the gas passage and exhausting the laser gas... Agent: Fanuc Corporation

20110243178 - High power vcsel with improved spatial mode: The present invention relates to a VCSEL device comprising an optical gain medium (8) arranged between a first DBR (9) and a second DBR (7). The first and the second DBR form a laser cavity and are designed to allow self-contained lasing in the laser cavity, said second DBR (7)... Agent: Koninklijke Philips Electronics N.v.