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Coherent light generators August inventions list 08/11

20110206068 - Optical fiber emission circuit and fiber laser: Solving Means An optical fiber emission circuit according to the present invention includes a rare earth-doped optical fiber 11 that has a first clad 22 including a plurality of layers of clads around a core 21 and emits radiation light having a wavelength longer than a wavelength of excitation light... Agent: Fujikura Ltd.

20110206069 - Blue dysprosium laser: A quasi-three level laser system having crystalline YAG or YLF doped with trivalent Dysprosium can be pumped with a laser diode in the UV, and produce a pulsed laser blue emission from the 4 F 9/2 energy level at 490 nm, a red emission at 660 nm, or a yellow... Agent: United States Government In The Name Of The Secretary Of The Navy

20110206074 - Apparatus for providing optical radiation: In one embodiment, a photo-darkening resistant optical fibre includes a waveguide having a numerical aperture less than 0.15. The waveguide includes a core having a refractive index n1 and a pedestal having a refractive index n2, and wherein the fibre includes a first cladding having a refractive index n3 surrounding... Agent:

20110206071 - Compact high power femtosecond laser with adjustable repetition rate: Designs and techniques for constructing and operating femtosecond pulse lasers are provided. One example of a laser engine includes an oscillator that generates and outputs a beam of femtosecond seed pulses, a stretcher-compressor that stretches a duration of the seed pulses, and an amplifier that receives the stretched seed pulses,... Agent:

20110206070 - High power femtosecond laser with adjustable repetition rate: Designs and techniques for constructing and operating femtosecond pulse lasers are provided. One example of a laser engine includes an oscillator that generates and outputs a beam of femtosecond seed pulses, a stretcher-compressor that stretches a duration of the seed pulses, and an amplifier that receives the stretched seed pulses,... Agent:

20110206073 - High power femtosecond laser with adjustable repetition rate and simplified structure: Designs and techniques for constructing and operating femtosecond pulse lasers are provided. One example of a laser engine includes an oscillator that generates and outputs a beam of femtosecond seed pulses, a stretcher-compressor that stretches a duration of the seed pulses, and an amplifier that receives the stretched seed pulses,... Agent:

20110206072 - High power femtosecond laser with repetition rate adjustable according to scanning speed: Designs and techniques for constructing and operating femtosecond pulse lasers are provided. One example of a laser engine includes an oscillator that generates and outputs a beam of femtosecond seed pulses, a stretcher-compressor that stretches a duration of the seed pulses, and an amplifier that receives the stretched seed pulses,... Agent:

20110206075 - Nonlinear imaging using passive pulse splitters: An apparatus includes a pulsed laser source that produces a pulsed laser beam at an input repetition rate and an input pulse power; a passive pulse splitter that receives the pulsed laser beam and outputs a signal including a plurality of sub-pulses for each input pulse of the pulsed laser... Agent: Howard Hughes Medical Institute

20110206076 - Seed source for high power optical fiber amplifier: Methods and systems are provided to reduce stimulated Brillouin scattering in high power optical fiber amplifiers. In an embodiment, a seed source includes a narrow linewidth semiconductor laser driven with a current ramp that simultaneously sweeps the optical power and the lasing frequency at a rate fast enough to reduce... Agent: Pyrophotonics Lasers, Inc.

20110206077 - Thin disk laser operations with unique thermal management: A thermal management apparatus and method for a thin disk laser system enabling the laser system to have near isothermal temperatures across and throughout a thin disk comprising a mechanically controlled oscillating heat pipe having effective thermal conductivity of 10-20,000 W/m*K that promotes near isothermal conditions in lasing of the... Agent: The Curators Of The University Of Missouri

20110206078 - P-element doped laser medium apparatus and method: A glass composition for use as a laser medium, a method for producing the glass composition, and a laser apparatus including the glass composition are provided. The glass composition includes a host glass; a 3p component having a concentration of about 5 mole percent to about 10 mole percent; and... Agent:

20110206079 - Side emitting semiconductor package: A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides.... Agent: Advanced Optoelectronic Technology, Inc.

20110206080 - Laser diode and method of manufacturing the same: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a... Agent: Sony Corporation

20110206081 - Semiconductor light-emitting device and method for manufacturing the same: A semiconductor light-emitting device includes an n-type cladding layer formed on a substrate, an active layer formed on the n-type cladding layer and including a well layer and a barrier layer, and a p-type cladding layer formed on the active layer. The well layer is made of an indium-containing nitride... Agent: Panasonic Corporation

20110206082 - Semiconductor laser and semiconductor laser module: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first... Agent: Furukawa Electric Co., Ltd.

20110206083 - Semiconductor laser apparatus: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The... Agent: Hamamatsu Photonics K.k.

20110206084 - Laser based on quantum dot activated media: A laser gain medium and laser system include a host material, a plurality of quantum dots dispersed throughout the host material, and a plurality of laser active ions surrounding each of the quantum dots. The laser active ions are disposed in close proximity to the quantum dots such that energy... Agent: Raytheon Company

20110200061 - Utilization of yb: and nd: mode-locked oscillators in solid-state short pulse laser systems: An optimized Yb: doped fiber mode-locked oscillator and fiber amplifier system for seeding Nd: or Yb: doped regenerative amplifiers. The pulses are generated in the Yb: or Nd: doped fiber mode-locked oscillator, and may undergo spectral narrowing or broadening, wavelength converting, temporal pulse compression or stretching, pulse attenuation and/or lowering... Agent: Imra America, Inc.

20110200062 - Method of controlling wavelength-tunable laser: A method of controlling a wavelength-tunable laser selecting an oscillation wavelength with a combination of a plurality of wavelength selection portions of which wavelength peak is different from each other, comprising: a first step of confirming a control direction of the wavelength selection portion in a case where a setting... Agent: Sumitomo Electric Device Innovations, Inc.

20110200063 - Optical amplifier system for pulsed laser based on a guiding gain medium and pulsed laser comprising same: An optical amplifier for pulsed laser with short or ultra-short and energetic pulses includes an optical pumping source for generating a pump wave, an elongate amplifying medium including an input interface for receiving an optical signal to be amplified, the medium being able to amplify the optical signal propagating along... Agent: Fibercryst

20110200064 - Optical device and optical apparatus: An optical device includes: an optical element having a first light-emitting region in the vicinity of a first surface and a first metal layer in contact with at least a region of the first surface which does not face the first light-emitting region; a support body disposed on the side... Agent: Sony Corporation

20110200065 - Nitride based semiconductor laser device: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion... Agent: Sanyo Electric Co., Ltd.

20110200066 - Chip module package structure: A chip module package structure applied to an optical input device includes a cover body, a first chip module, and a second chip module. The first chip module and the second chip module are respectively combined with the cover body, the first chip module has an optical source, and the... Agent: Pixart Imaging Inc.

20110194572 - Composite optical waveguide, variable-wavelength laser, and method of oscillating laser: A composite optical waveguide 1 includes a first optical waveguide 9 comprising a silica-based core and a second optical waveguide 11 comprising an Si-based core. The second optical waveguide 11 is joined to the first optical waveguide 9. The length of the first optical waveguide 9 corresponds to a permissible... Agent:

20110194573 - Fiber laser processing apparatus: A fiber laser processing apparatus controls a LD drive current ILD in a power feedback control mode (FIG. 3E) such that output of a fiber laser beam FB rises substantially from zero or a value around zero to a preceding level having no substantial effect on laser processing and arrives... Agent:

20110194575 - Clock generator, pulse generator utilizing the clock generator, and methods thereof: A clock generator for generating a target clock signal, comprising: a control circuit, receiving a reference clock signal, and for generating a clock enable signal and a delay selecting signal according to the reference clock signal; a delay module, coupled to the control circuit, for delaying the reference clock signal... Agent:

20110194576 - Driver for a pockels cell: The invention relates to an activation circuit for a Pockels cell, comprising a first circuit node (P1), which can be connected to a first connection of the Pockels cell (CP), and a second circuit node (P2), which can be connected to a second connection of the Pockels cell (CP), wherein... Agent:

20110194574 - Method and apparatus for reliably laser marking articles: The invention is a method and apparatus for creating a color and optical density selectable visible mark on an anodized aluminum specimen. The method includes providing a laser marking system having a laser, laser optics and a controller operatively connected to said laser to control laser pulse parameters and a... Agent: Electro Scientific Industries, Inc.

20110194577 - Systems and methods for stabilizing laser frequency based on an isoclinic point in the absorption spectrum of a gas: Systems and methods for stabilizing laser frequency based on an isoclinic point of an atomic or molecular medium are provided herein. A system may include: a transmission cell containing a gas and configured to transmit light from the laser, the gas having an absorption spectrum with an isoclinic point; a... Agent: The Aerospace Corporation

20110194578 - Laser light-source apparatus and projector apparatus: A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that... Agent:

20110194579 - Vertical cavity surface emitting laser: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor... Agent: Sony Corporation

20110194581 - Arrangement for rf power delivery to a gas discharge laser with cascaded transmission line sections: RF power is transmitted to a CO2 gas discharge laser form a source of RF power via a series combination of transmission line sections. The lengths and characteristic impedances of the transmission line sections are selected to transform the impedance of the RF power source to the operating impedance of... Agent: Coherent, Inc.

20110194580 - Line narrowing module: An apparatus is disclosed which may comprise a grating receiving light, a first prism moveable to coarsely select an angle of incidence of the light on the grating, and a second prism moveable to finely select an angle of incidence of the light on the grating. In one application, the... Agent: Cymer, Inc.

20110188522 - Reduction of timing jitter in a passive q-switched solid state laser: A method and device for reducing the timing jitter in a passive Q-switched Nd:YAG solid state laser by spatially selective bleaching a thin sheet of a saturable absorber of Cr+4:YAG from a direction orthogonal to the direction of laser emission where the Cr+4:YAG transmission increases 18% when the bleaching probe... Agent: United States Of America, As Represented By The Secretary Of Army

20110188523 - Temperature control system for a frequency converted diode laser: Apparatus and methods of controlling a frequency-converted diode laser system are disclosed. The diode laser systems can include embodiments of thermally coupled elements facilitating temperature stabilization. Aspects of some methods include monitoring the output of a stabilized diode laser system to reduce noise of the output laser beam. Other aspects... Agent:

20110188524 - Designs and processes for thermally stabilizing a vertical cavity surface emitting laser (vcsel) in a chip-scale atomic clock: Designs and processes for thermally stabilizing a vertical cavity surface emitting laser (vcsel) in a chip-scale atomic clock are provided. In one embodiment, a Chip-Scale Atomic Clock includes: a vertical cavity surface emitting laser (vcsel); a heater block coupled to a base of the vcsel; a photo detector; a vapor... Agent: Honeywell International Inc.

20110188525 - Terahertz wave emission laser device: A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery... Agent:

20110188526 - Two-dimensional photonic crystal laser: A two-dimensional photonic crystal laser light is provided. The two-dimensional photonic crystal laser includes a two-dimensional photonic crystal made of a plate-shaped member provided with a periodic arrangement of identically-shaped modified refractive index areas having a refractive index different from that of the plate-shaped member; and an active layer provided... Agent: Japan Science And Technology Agency

20110188527 - Nanotube array injection lasers: Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n... Agent:

20110188528 - High injection efficiency polar and non-polar iii-nitrides light emitters: Injection efficiency in both polar and non-polar III-nitride light-emitting structures is strongly deteriorated by inhomogeneous population of different quantum wells (QWs) in multiple QW (MQW) active region of the emitter. Inhomogeneous QW population becomes stronger in long-wavelength emitters with deeper active QWs. In both polar and non-polar structures, indium and/or... Agent: Ostendo Technologies, Inc.

20110188529 - Optoelectronic component: An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area... Agent: Osram Opto Semiconductors Gmbh

20110188530 - Laser light source and method for producing a laser light source: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates,... Agent: Osram Opto Semiconductors Gmbh

20110188531 - Vertical cavity surface emitting laser with improved mode-selectivity: It is an object of the invention to provide a VCSEL having both a high beam quality or a low M2-factor, respectively, and a reduced mirror thickness which improves the heat dissipation due to the reduced thickness and the production cost. It is suggested to employ a Bragg-reflector in combination... Agent: Koninklijke Philips Electronics N.v.

20110188532 - Semiconductor laser apparatus: This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface... Agent: Sanyo Electric Co., Ltd.

20110188533 - Integrated rare earth devices: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single... Agent: