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Coherent light generators July category listing 07/11

20110182305 - Small packaged tunable laser with beam splitter: According to one embodiment, the present application includes a tunable laser configured in a small package. The tunable laser includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing and configured to receive an information-containing electrical signal.... Agent: Emcore Corporation

20110182306 - Generation of burst of laser pulses: This invention relates to a method for generating bursts of laser pulses and to an apparatus for generating bursts of laser pulses and to a Pockels cell driving circuit. A method for generating bursts of laser pulses comprising generating first repetition rate laser pulses, and generating first repetition rate laser... Agent: Bergmann Messgerate Entwicklung Kg

20110182307 - Tracking injection seeding power based on back facet monitoring (bfm) of an injection seeded laser: A method of estimating an injection power of seed light injected into an injection-seeded transmitter. A back face monitoring (BFM) response of the injection-seeded transmitter is determined, and data representative of the BFM response stored in a memory. During run-time, a controller of the injection-seeded transmitter, detects a temperature of... Agent: Lg-nortel Co. Ltd.

20110182308 - Monolithic fiber laser beam combiner: A compact, light weight laser beam combiner includes a pair of concentric annular shells defining an annular cavity of an annular ring resonator having an annular solid laser gain medium disposed therein. The output ends of a plurality of low power and brightness fiber lasers are coupled into the cavity... Agent:

20110182309 - Laser diode package with enhanced cooling: A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the... Agent: Lawrence Livermore National Security, LLC

20110182311 - Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode: Provided is a gallium nitride based semiconductor light-emitting device with a structure capable of enhancing the degree of polarization. A light-emitting diode 11a is provided with a semiconductor region 13, an InGaN layer 15 and an active layer 17. The semiconductor region 13 has a primary surface 13a having semipolar... Agent: Sumitomo Electric Industries, Ltd.

20110182310 - Nitride semiconductor laser diode and manufacturing method thereof: A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-xN (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active layer formed on the n-type cladding layer, and a p-type cladding... Agent: Panasonic Corporation

20110182312 - Laser diode using asymmetric quantum wells: A laser diode using asymmetric quantum wells includes a N-type semiconductor, a P-type semiconductor, a first quantum well structure, and a second quantum well structure. The first quantum well structure is between the N-type semiconductor and the P-type semiconductor, and includes at least one first quantum well having a first... Agent: National Changhua University Of Education

20110182313 - Laser diode and method of manufacturing the same: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a... Agent: Sony Corporation

20110182315 - Surface-emitting semiconductor laser and manufacturing method thereof: A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an... Agent: Sony Corporation

20110182314 - Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, and optical transmission device: A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between... Agent: Fuji Xerox Co., Ltd.

20110182316 - Surface emitting semiconductor laser: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the... Agent: Fuji Xerox Co., Ltd.

20110182317 - Surface emitting semiconductor laser having a plurality of active zones: A surface emitting semiconductor laser includes a semiconductor body having at least two active zones that emit laser radiation and are connected to one another by a tunnel junction; an external resonator mirror arranged outside the semiconductor body and forming a laser resonator; and at least one polarization-selective element arranged... Agent: Osram Opto Semiconductors Gmbh

20110182318 - Surface-emitting laser and surface-emitting laser array: A surface-emitting laser includes a surface relief structure provided on an upper multilayer reflector, the surface relief structure including a region of a first laminate, a region of a second laminate that has a larger optical thickness than the first laminate, and a region of a third laminate that has... Agent: Canon Kabushiki Kaisha

20110182319 - Co2 laser output power control during warm-up: A CO2 gas discharge laser includes a housing enclosing spaced-apart electrodes and a lasing gas. A laser resonator extends between the spaced-apart electrodes. An RF power supply provides RF power for creating a discharge in the lasing gas, causing laser radiation to be delivered by the laser resonator. The power... Agent: Coherent, Inc.

20110176563 - Cvd single crystal diamond material: Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at... Agent:

20110176564 - Methods of modulating a quantum dot laser and a multisection quantum dot laser: A multisection quantum dot laser (7) comprising at least first (8) and second (9) sections, each section (8, 9) comprising a semiconductor substrate (2) comprising p (3) and n type (4) layers and a quantum dot layer sandwiched therebetween; the semiconductor substrate (2) comprising a back electrical contact in electrical... Agent: Filtronic PLC

20110176565 - Multi-beam laser control system and method: A multi-beam laser beam control system includes a laser transmitter configured to emit light in a plurality of beamlets. A sensor is configured to receive light from the beamlets. A processor is communicably coupled to the sensor and configured to compute a relative phase of a wavefront of at least... Agent:

20110176567 - Multibeam arrays of optoelectronic devices for high frequency operation: A VCSEL array device formed of a monolithic array of raised VCSELs on an electrical contact and raised inactive regions connected to the electrical contact. The VCSELs can be spaced symmetrically or asymmetrically, in a manner to improve power or speed, or in phase and in parallel. The VCSELs include... Agent: Trilumina Corporation

20110176566 - Semiconductor laser pumped solid-state laser device: A compact semiconductor laser pumped solid-state laser device is provided that can suppress unnecessary parasitic oscillation in a microchip and efficiently extract energy. The semiconductor laser pumped solid-state laser device comprises: a solid-state laser core 1 disposed in the center and formed of a laser medium containing neodymium (Nd) as... Agent: Inter-university Research Institute Corporation, National Institutes Of Natural Sciences

20110176568 - Nitride semiconductor laser diode: A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an... Agent:

20110176569 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface... Agent: Sumitomo Electric Industries, Ltd.

20110176570 - Semiconductor light emitting device: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped... Agent: Sony Corporation

20110176571 - Semiconductor light emitting device and manufacturing method therefor: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The... Agent: Rohm Co., Ltd.

20110176572 - Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission: A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed... Agent: Oclaro Technology Limited

20110176573 - Silicone leaded chip carrier: In an embodiment, the invention provides a SLCC package comprising first and second electrically conductive terminals, a polysiloxane and glass fiber structural body, a light source and a polysiloxane encapsulant. The first and second electrically conductive terminals are attached to the polysiloxane and glass fiber structural body. The light source... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110176574 - Solid-state laser device: A solid-state laser apparatus 1 bounces laser light L2 between an end mirror 3 and an output mirror 4 via a slab-type solid-state laser medium 2 excited by excitation light L1 to thereby amplify and output the laser light L2. The solid-state laser medium 2 includes incident/exit end faces 2a,... Agent:

20110170563 - Apparatus and method for enabling quantum-defect-limited conversion efficiency in cladding-pumped raman fiber lasers: Cladding-pumped Raman fiber lasers and amplifiers provide high-efficiency conversion efficiency at high brightness enhancement. Differential loss is applied to both single-pass configurations appropriate for pulsed amplification and laser oscillator configurations applied to high average power cw source generation.... Agent:

20110170564 - Fiber laser oscillators and systems using an optimized phase varying function: A pulsed fiber laser oscillator and laser systems incorporating such laser oscillators are presented. The laser oscillator first includes a light generating module which generates optical pulses having an initial spectral profile. A spectrum tailoring module tailors the initial spectral profile of the optical pulses by imposing a phase variation... Agent: Institut National D'optique

20110170565 - Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using... Agent: Imra America, Inc.

20110170566 - Mode-locked solid state lasers using diode laser excitation: A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot... Agent: Battelle Memorial Institute

20110170567 - Laser bandwidth interlock capable of single pulse detection and rejection: A pulse of laser light is switched out of a pulse train and spatially dispersed into its constituent wavelengths. The pulse is collimated to a suitable size and then diffracted by high groove density multilayer dielectric gratings. This imparts a different angle to each individual wavelength so that, when brought... Agent:

20110170568 - Surface emitting semiconductor laser: A surface emitting semiconductor laser includes a substrate, an n-type lower DBR, an n-type cavity extending region formed on the lower DBR, an active region formed on the cavity extending region, and an upper DBR formed on the active region. A difference in refractive index between a relatively high refractive... Agent: Fuji Xerox Co., Ltd.

20110170569 - Semipolar iii-nitride laser diodes with etched mirrors: A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the... Agent: The Regents Of The University Of California

20110170570 - Co-extruded multilayer polymers films for all-polymer lasers: A polymer film laser is provided that comprises a plurality of extruded polymer layers. The plurality of extruded polymer layers comprises a plurality of alternating dielectric layers of a first polymer material having a first refractive index and a second polymer material having second refractive index different than the first... Agent:

20110170571 - High-power, high-throughput microwave discharge singlet oxygen generator for advanced electrical oxygen-iodine lasers: A laser device includes an optical resonator, a microwave driven discharge device, and a source for a second gas. The microwave driven discharge device is disposed relative to the optical resonator. The microwave driven discharge device operates at a discharge power and gas flow rate to produce a selected amount... Agent:

20110164631 - Synchronous pumping of a wagon wheel optical cavity: A laser cavity structure is disclosed which pertains to laser resonator geometries possessing circular symmetry, such as in the case of disk or spherical lasers. The disclosed invention utilizes a very-high finesse Bragg reflector (VHF-BR) thin film reflectors of many layer pairs of very small refractive index difference, the VHF-BR... Agent:

20110164632 - Method of driving a laser diode: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of... Agent: Sony Corporation

20110164633 - Wavelength-controlled semiconductor laser device: A semiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with the integrated photodiode is also used for heating the laser diode. A simpler design of a wavelength-controlled semiconductor laser is thus obtained.... Agent: Koninklijke Philips Electronics N.v.

20110164634 - Semiconductor laser device: A semiconductor laser device includes: a semiconductor laser; a carrier that has a carrier side face facing with a longitudinal direction of the semiconductor laser, has a carrier edge area, and has a first bonding area that is the closest to a first end of the semiconductor laser and a... Agent: Sumitomo Electric Device Innovations, Inc.

20110164635 - Laser device: A laser device includes a partially reflective mirror for separating laser light into monitor light and output light, a light output monitor device for detecting the intensity of the monitor light from the partially reflective mirror, a controller for controlling the intensity of the output light from the partially reflective... Agent: Nikon Corporation

20110164636 - Ld-driver improving falling edge of driving signal: An LD driver is disclosed, which improves the rising and falling times of the driving current for the LD. The LD driver includes an inverting amplifier, an emitter follower connected in down stream of the inverting amplifier, a driving transistor driven by the emitter follower, and a current-mirror circuit connected... Agent: Sumitomo Electric Industries, Ltd.

20110164637 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the... Agent: Sumitomo Electric Industries, Ltd.

20110164638 - Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and method of estimating damage from formation of scribe groove: In a group-III nitride semiconductor laser device, a laser structure includes a support base comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface, and a semiconductor region provided on the semipolar principal surface of the support base. An electrode is provided on the semiconductor region of the... Agent: Sumitomo Electric Industries, Ltd.

20110164639 - Light emitting and lasing semiconductor devices and methods: A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects;... Agent: The Board Of Trustees Of The University Of Illinois

20110164640 - Optical semiconductor device: An optical semiconductor device comprises: a semiconductor light emitting element including semiconductor layers, including an active layer having a quantum well structure and epitaxially grown on a semiconductor substrate; and a submount on which the semiconductor light emitting element is mounted. Strain in the active layer after mounting the semiconductor... Agent: Mitsubishi Electric Corporation

20110164641 - Optical semiconductor device and pumping light source for optical fiber amplifier: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block... Agent: Furukawa Electric Co., Ltd.

20110164642 - Laser diode with ridge waveguide structure and method for manufacturing the same: An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in... Agent: Sumitomo Electric Industries, Ltd.

20110164643 - Semiconductor laser device: According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer... Agent:

20110164644 - Optoelectronic semiconductor chip with gas-filled mirror: An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror... Agent: Osram Opto Semiconductors Gmbh

20110164646 - Laser diode array, method of manufacturing same, printer, and optical communication device: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first... Agent: Sony Corporation

20110164645 - Optoelectronic device having light source emitter and receiver integrated: An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under... Agent: National Central University

20110164647 - Excimer laser device: An excimer laser device capable of suppressing deterioration of optical elements provided in a laser chamber even if output energy per pulse is increased more than the conventional level, in which a width of a laser beam applied to the optical elements provided in the laser chamber is enlarged so... Agent:

20110164648 - Alleviation of laser-induced damage in optical materials by suppression of transient color centers formation and control of phonon population: Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished... Agent: Kla-tencor Corporation

20110164649 - Laser system having switchable power modes: A laser system comprises a pump module and a gain medium. The pump module is configured to output pump energy having a wavelength that is within a wavelength range of 874-881 nm. The gain medium is in the path of the pump energy and is configured to absorb the pump... Agent: Ams Research Corporation