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Coherent light generators June invention type 06/11

20110158266 - Passive coherent array using distributed fiber lasers: In some embodiments, an apparatus includes a first laser cavity including a set of high-reflector gratings coupled in series and a second laser cavity including a set of high-reflector gratings coupled in series. Each high-reflector grating has an associated spectral bandwidth. The first laser cavity is configured to receive at... Agent:

20110158265 - Ring or linear cavity of all-fiber-based ultra short pulse laser system and method of operating the same: A ring-cavity or linear-cavity all-fiber-based ultra short pulse laser system and method of operating the same are provided. The all-fiber-based ultra short pulse laser system includes a pulse pump light source, a gain fiber, a first fiber signal pump combining unit, a broadband optical isolator, a fiber saturable absorber, an... Agent: Industrial Technology Research Institute

20110158267 - Pulsed laser system with a thulium-doped saturable absorber q-switch: A pulsed laser system having a Tm3+-doped saturable absorber Q-switch unit, capable of outputting laser pulses sequentially by inputting a stable continuous-wave pump light source, is disclosed. When the gain excited in the Er3+ laser resonator exceeds the lasing threshold, the photons start resonating and being amplified in the Er3+... Agent: National Cheng Kung University

20110158268 - Mode-locker comprising a graphene, and pulse laser device comprising the same: The present invention relates to a mode-locker including a graphene and a laser pulse device. The mode-locker mode-locks a laser that propagates through a laser oscillation loop. The mode-locker includes: i) a core; ii) cladding that surrounds the core, wherein a groove is formed on a side of the cladding;... Agent: Korea Institute Of Science And Technology

20110158269 - Laser module, control method of the same, control data of the same, and control data generation method: A laser module includes a semiconductor laser, an output optical system provided on an optical output side of the semiconductor laser, a temperature detecting element that detects a temperature of the output optical system; and an output controller that calculates a drive current to set an optical output intensity of... Agent: Eudyna Devices Inc.

20110158270 - Tunable quantum cascade lasers and photoacoustic detection of trace gases, tnt, tatp and precursors acetone and hydrogen peroxide: Methods and apparatus for broad tuning of single wavelength quantum cascade lasers and the use of light output from such lasers for highly sensitive detection of trace gases such as nitrogen dioxide, acetylene, and vapors of explosives such as trinitrotoluene (TNT) and triacetone triperoxide (TATP) and TATP's precursors including acetone... Agent:

20110158271 - Laser resonator gain medium securement: A laser resonator comprises a cylindrical gain medium, a cooling system and a coupling member. The cylindrical gain medium comprises a central axis, an outer side surface, two opposing end faces and a first depression in the outer side surface. The cooling system comprises a cooling jacket disposed around the... Agent: Ams Research Corporation

20110158272 - High power multi-wavelength laser source: An optical assembly comprises a combination of a number of single spatial mode semiconductor optical gain elements, a number of microlenses, and a wavelength-selective planar lightwave circuit (PLC) that routes light of different wavelengths from a different inputs to a single output. The microlens elements couple light from the semiconductor... Agent:

20110158273 - Semiconductor laser device, optical pickup device and semiconductor device: A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the... Agent:

20110158274 - Optical device: A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant... Agent: Ipg Photonics Corporation

20110158275 - Group-iii nitride semiconductor laser device, and method of fabricating group-iii nitride semiconductor laser device: In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser... Agent: Sumitomo Electric Industries, Ltd.

20110158276 - Group-iii nitride semiconductor laser device, and method of fabricating group-iii nitride semiconductor laser device: In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser... Agent: Sumitomo Electric Industries, Ltd.

20110158277 - Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrate: A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor... Agent: Sumitomo Electric Industries, Ltd.

20110158278 - Hybrid silicon vertical cavity laser with in-plane coupling: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after... Agent:

20110158279 - Semiconductor optical element and integrated semiconductor optical element: A semiconductor optical element and an integrated semiconductor optical element suppressing leakage current flow through a burying layer. A mesa-stripe-shaped laminate structure includes a p-type cladding layer, an active layer, and an n-type cladding layer. A burying layer on a side of the laminated structure includes, a first p-type semiconductor... Agent: Mitsubishi Electric Corporation

20110158280 - Photonic crystal surface emitting laser: The present invention provides a photonic crystal surface emitting laser with which an arbitrary beam shape can be obtained and which enables design with a high degree of freedom. The surface emitting laser including a photonic crystal having a resonance mode in an in-plane direction parallel to a substrate includes... Agent: Canon Kabushiki Kaisha

20110158281 - Gas discharge chamber: A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in... Agent: Gigaphoton Inc.

20110150011 - Resonantly pumped tm doped cyrstalline lasers: A resonantly pumped, trivalent thulium ion (Tm3+) doped, crystal laser with improved efficiency is disclosed. Embodiments are pumped from the 3H6 ground state manifold to the 1st excited 3F4 state manifold by photons with wavelengths between 1.4 and 2.2 microns and laser wavelengths ranging from 1.5 to 2.4 microns arising... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20110150010 - Very large mode slab-coupled optical waveguide laser and amplifier: A very large mode (VLM) slab-coupled optical waveguide laser (SCOWL) is provided that includes an upper waveguide region as part of the waveguide for guiding the laser mode. The upper waveguide region is positioned in the interior regions of the VLM SCOWL. A lower waveguide region also is part of... Agent:

20110150012 - Passively q-switched side pumped monolithic ring laser: Disclosed herein are systems and methods for generating a side-pumped passively Q-switched non-planar ring oscillator. The method introduces a laser into a cavity of a crystal, the cavity having a round-trip path formed by a reflection at a dielectrically coated front surface, a first internal reflection at a first side... Agent: And Spec Admi

20110150013 - Resonant pumping of thin-disk laser with an optically pumped external-cavity surface-emitting semiconductor laser: Laser apparatus comprises a solid-state laser-resonator including a thin-disk solid-state gain-medium. The thin-disk gain medium is optically pumped using radiation circulating in an OPS-laser resonator. The solid-state laser-resonator can be a passively mode-locked or actively Q-switched laser-resonator.... Agent: Coherent, Inc.

20110150014 - Analog temperature control for tunable lasers: An analog circuit including a voltage divider for providing a first voltage corresponding to an actual temperature of said thermal tuning element of the laser; an analog comparator generating an analog output current for comparing the first voltage with a reference voltage, the reference voltage being representative of a temperature... Agent:

20110150015 - Generation of frequency-pre-selectable radiation by using more than one cascaded frequency conversion processes of resonantly enhanced beams: The invention describes methods and apparatus for the generation of laser radiation with pre-selectable frequency, which could be bigger or smaller than its fundamental beam frequency, through a combination of two or more intracavity frequency conversion processes of two or more resonantly enhanced beams. These techniques are particularly useful for... Agent:

20110150016 - Tunable laser module: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the... Agent: Electronics And Telecommunications Research Institute

20110150018 - Laser device: Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second... Agent: Electronics And Telecommunications Research Institute

20110150019 - Monochromatic light source: Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one... Agent:

20110150017 - Relaxed ingan/algan templates: A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures. Although not necessary, the buffer layer is typically... Agent: Palo Alto Research Center Incorporated

20110150020 - Ii-vi mqw vscel on a heat sink optically pumped by a gan ld: Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174)... Agent: 3m Innovative Properties Company

20110150021 - Diode laser, integral diode laser, and an integral semiconductor optical amplifier: Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original... Agent: General Nano Optics Limited

20110150022 - Gan laser element: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part... Agent: Sharp Kabushiki Kaisha

20110150023 - Nitride semiconductor laser device: A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type... Agent: Nichia Corporation

20110150024 - Hybrid laser coupled to a waveguide: A method for introducing light into a waveguide formed on the upper surface of a microelectronics substrate, by means of a distributed feedback laser device formed by the association of an SOI-type structure having a portion forming said waveguide, of a stack of III-V semiconductor gain materials partially covering the... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110150025 - Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and... Agent: Canon Kabushiki Kaisha

20110150026 - Semiconductor laser pumped solid-state laser device for engine ignition: There is provided a semiconductor laser pumped solid-state laser device for engine ignition that can stably provide optical energy required for ignition across a wide temperature range. In the semiconductor laser pumped solid-state laser device for engine ignition, a plurality of semiconductor lasers 21, 22, 23, and 24 are used... Agent: Nippon Soken, Inc.

20110142082 - Fiber laser: Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying... Agent: Electronic And Telecommunications Research Institute

20110142083 - Ytterbium-doped optical fiber, fiber laser and fiber amplifier: An ytterbium-doped optical fiber includes: a core which contains at least ytterbium, aluminum, and phosphorus; and a cladding which encircles the core, wherein an aluminum oxide equivalent concentration of the aluminum in the core is 0.2 mol % or more, a diphosphorus pentaoxide equivalent concentration of the phosphorus is higher... Agent: Fujikura Ltd.

20110142085 - Coupled cavity laser diode for generating chaotic signals: A chaotic light generator device comprises laser structures integrated on a common substrate. Each laser structure comprises a ridge of light amplifying material that forms a waveguide extending between at least partly reflective surfaces. Each laser structure comprises an injection electrode for injecting electric current into the ridge of light... Agent: Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno

20110142084 - Method and system for stable and tunable high power pulsed laser system: A laser system includes an injection laser source having an output and operable to provide a laser output characterized by a first wavelength, a first linewidth, an output power. The laser system also includes a tunable pulsed source characterized by a gain bandwidth. The tunable pulsed source is operable to... Agent: Pyrophotonics Lasers, Inc.

20110142086 - Optical module with enhanced robustness of temperature controlling device: An optical assembly (OSA) that installs a semiconductor optical device mounted on a thermo-electric controller (TEC) is disclosed. The TEC in the upper plate thereof is mechanically connected to the housing, or to the block stiffly fixed to the housing by a bridge made of stiff material. The bridge preferably... Agent: Sumitomo Electric Industries, Ltd.

20110142087 - Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof: The invention relates, among other things, to a method for the assembly of a semiconductor component, wherein the semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat-conducting body each. For this purpose, the heat-conducting bodies are joined in a third... Agent: Jenoptik Laser Gmbh

20110142088 - Photon pair source and method for its production: The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational behaviour of the photon pair source is determined by adjusting the fine structure splitting of the excitonic energy level... Agent:

20110142090 - Laser diode and method of manufacturing laser diode: e

20110142089 - Semiconductor laser device and method of manufacturing the device: A first semiconductor layer, an active layer, a second semiconductor layer, and a contact layer are sequentially stacked on a substrate. A ridge portion extending between both facets of a resonator is provided in the second semiconductor layer and the contact layer. A current confining layer is formed to be... Agent:

20110134940 - Narrow linewidth brillouin laser: A Brillouin laser having a narrowed linewidth, reduced relative intensity noise, and increased output power includes a pump laser that provides pump energy to an optical fiber resonant cavity to stimulate Brillouin emission. The output of pump laser is stabilized and its linewidth is narrowed by locking the frequency and... Agent: Schlumberger Technology Corporation

20110134941 - Two dimensional photonic crystal surface emitting laser: Provided is a two dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two dimensional photonic crystal and an absorption loss in an active layer caused by serving as an absorbing layer without contributing to light emission, and can improve light... Agent: Canon Kabushiki Kaisha

20110134943 - Laser based frequency standards and their applications: Frequency standards based on mode-locked fiber lasers, fiber amplifiers and fiber-based ultra-broad bandwidth light sources, and applications of the same.... Agent: Imra America, Inc.

20110134942 - Mode locked laser system: A laser resonator cavity is presented. The laser resonator cavity comprises an optical manipulator of different longitudinal modes propagating along different optical paths. The optical manipulator is configured for adjusting a difference in optical lengths of the different optical paths thereby adjusting a frequency spacing between the different longitudinal.... Agent: Legato Laser Technology Ltd.

20110134944 - Efficient pulse laser light generation and devices using the same: A time delay is introduced in the optical path of the light pulse at fundamental wavelength relative to that for the fourth harmonic light pulse in a set up for generating the 5th harmonic, to compensate for at least a portion of the time delay of the fourth harmonic relative... Agent: Lasertec Corporation

20110134946 - Lengthening the path of a laser beam in a monolothic solid state laser apparatus: A solid state laser device is provided. The active element has a double slope portion defining a right angle between the slopes, wherein the pump light beam is directed into one of the slopes, and wherein an output coupler configured to output a laser beam from the active element is... Agent: Elbit Systems Electro-optics Elop Ltd.

20110134945 - Lengthening the path of a pump beam in a monolothic solid state laser apparatus: A solid state laser device with a lengthened pump beam path is provided herein. The laser device includes an active element having a specified geometric shape, specified optical characteristics, and further configured for lasing; and a light pumping element optically coupled to the active element, wherein the light pumping element... Agent: Elbit Systems Electro-optics Elop Ltd.

20110134947 - Laser assembly and method and system for its operation: A laser assembly and a method for controlling light output thereof are presented. The laser assembly comprises a semiconductor laser diode having an active region and its associated electric current driver. The electric current driver is controllably operated to excite said active region to induce a certain electric current profile... Agent: X.d.m. Ltd.

20110134949 - Compact, thermally stable multi-laser engine: Various embodiments of a multi-laser system are disclosed. In some embodiments, the multi-laser system includes a plurality of lasers, a plurality of laser beams, a beam positioning system, a thermally stable enclosure, and a temperature controller. The thermally stable enclosure is substantially made of a material with high thermal conductivity... Agent: Melles Griot, Inc.

20110134948 - Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method: Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in... Agent: Sharp Kabushiki Kaisha

20110134950 - Method of manufacturing semiconductor device: The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step... Agent: The University Of Tokyo

20110134951 - Semiconductor laser: A single pulse semiconductor laser operating in the gain-switching regime comprises a plane asymmetric waveguide and an active layer in the waveguide, the ratio of a thickness of the active layer to an optical confinement factor of the laser being extremely large, larger than about 51 μm, for example.... Agent:

20110134952 - Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device: A method of manufacturing a semiconductor laser having an end surface window structure includes the steps of forming a groove near at least the formation position of the end surface window structure of a substrate, and growing a nitride-based group III-V compound semiconductor layer including an active layer formed of... Agent: Sony Corporation

20110134953 - Waveguide laser: It is an object of the invention to provide a simple setup of a waveguide laser which allows to control the emission of specific laser wavelengths in a laser material having laser transitions of similar wavelengths. For this purpose a core (4) forming a gain medium is provided with a... Agent: Koninklijke Philips Electronics N.v.

20110134956 - Process for producing semiconductor device and semiconductor device: There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the... Agent: Canon Kabushiki Kaisha

20110134954 - Semiconductor device having an ingan layer: The present invention relates to a method that involves providing a stack of a first substrate and a InGaN seed layer formed on the first substrate, growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure, forming a first mirror layer overlaying the exposed surface of... Agent:

20110134955 - Semiconductor laser diode device and method of fabrication thereof: Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a... Agent: Renesas Electronics Corporation

20110134957 - Low chirp coherent light source: A coherent light source having a semiconductor laser resonator and an optical amplifier which amplifies coherent light emitted by the semiconductor laser resonator in response to current injection, in which the amount of current injected into the semiconductor laser is controlled for conformity with a chirp requirement of an optical... Agent: Emcore Corporation

20110128978 - Broad spectrum optical supercontinuum source: An optical supercontinuum radiation source for generating a broad optical supercontinuum from pump radiation having a wavelength in the range 900 nm to 1200 nm includes a microstructured optical fibre and a pump laser adapted to generate pump radiation for pumping the microstructured optical fibre. The fibre can have a... Agent:

20110128979 - Laser scanning device and method using the same: A laser scanning device and a method using the same are provided. The laser scanning device includes a laser output unit, a shape rotation unit, a scanning unit and a control unit. The laser output unit is used to output a laser beam. The shape rotation unit is disposed on... Agent: Industrial Technology Research Institute

20110128980 - Compound semiconductor device and method of manufacturing compound semiconductor device: The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer 30 in... Agent: Showa Denko K.k.

20110128983 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed... Agent: Sumitomo Electric Industries, Ltd.

20110128982 - High efficiency slab-coupled optical waveguide laser and amplifier: A slab-coupled optical waveguide laser (SCOWL) is provided that includes an upper and lower waveguide region for guiding a laser mode. The upper waveguide region is positioned in the interior regions of the SCOWL. The lower waveguide region also guides the laser mode. The lower waveguide region is positioned in... Agent:

20110128981 - P-type group iii nitride semiconductor and group iii nitride semiconductor element: This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a... Agent:

20110128984 - Native green laser semiconductor devices: A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region... Agent:

20110128985 - Semiconductor laser: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type... Agent: Rohm Co., Ltd.

20110128986 - Semiconductor laser device: A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of... Agent: Mitsubishi Electric Corporation

20110128987 - High-power semiconductor laser and method for manufacturing the same: A high-power semiconductor laser includes a support block, an anode metal plate, a cathode metal plate and a chip. The support block has a step, and the two ends of the support block have bosses, in which there are screw holes. The chip is welded to an insulation plate, which... Agent: Xi'an Focuslight Technologies Co., Ltd.