|Coherent light generators patents - Monitor Patents|
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Coherent light generators January recently filed with US Patent Office 01/11Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 01/27/2011 > 12 patent applications in 10 patent subcategories. recently filed with US Patent Office
20110019700 - Mode-locked two micron fiber lasers: A mode-locked fiber laser comprising a multicomponent glass fiber doped with a trivalent rare-earth ion of thulium and/or holmium.... Agent: Dale F. Regelman
20110019701 - System, device and method for extending the life-time of an optical system: The invention relates to an optical system arranged to provide an output which, in operation, comprises at least one figure of merit, Q. The system comprises an optical component having multiple working areas, said component being mounted on a support member. The system further comprises an optical beam path arranged... Agent: Buchanan, Ingersoll & Rooney PC
20110019702 - Method of tuning a semiconductor laser device having coupled cavities: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the... Agent: Patzik, Frank & Samotny Ltd.
20110019703 - Wavelength tunable semiconductor laser having multiple sets of intercavity spacings: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the... Agent: Patzik, Frank & Samotny Ltd.
20110019704 - Laser beam source device, lighting device, image display apparatus, and monitoring apparatus: A laser beam source device includes: a light source which emits light having fundamental wavelength; a wavelength conversion element which converts the light having fundamental wavelength into light having conversion wavelength; a resonance element which transmits first light converted into the conversion wavelength light and reflects light not converted; an... Agent: Workman Nydegger 1000 Eagle Gate Tower
20110019705 - Tailored pulse burst: Output pulses from an optical system having a seed source and an optical amplifier coupled to the seed source may be controlled by controlling a power of a seed signal from the seed source. The seed signal may be varied between a minimum value and a maximum value in a... Agent: Joshua D. Isenberg Jdi Patent
20110019706 - Shunt driver circuit for semiconductor laser diode: A driver circuit for the laser diode is disclosed. The driver circuit has the shunt configuration with a switching transistor connected in parallel to the laser diode to shunt the current flowing in the laser diode. In the present invention, the bias for the switching transistor is varied as the... Agent: Venable LLP
20110019708 - High smsr unidirectional etched lasers and low back-reflection photonic device: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle... Agent: Jones, Tullar & Cooper, P.C.
20110019707 - Light emitting device and a method for manufacturing the same: A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.
20110019709 - Semiconductor device and method of manufacturing the same: The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side faces; an optical function unit formed on the top face; a plurality of electrode pads formed on the under face; and... Agent: Rader Fishman & Grauer PLLC
20110019710 - Diode laser structure for generating diode laser radiation: A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPPSA), where the stripe emitters are arranged such that... Agent: Fish & Richardson P.C. (bo)
20110019711 - Portable laser source: A portable laser source includes a flash lamp assembly defining a hollow central channel, an elongate laser rod extending within the hollow channel for receiving a flash of light emitted by the surrounding flash lamp assembly, and a hermetically-sealed enclosure housing both the flash lamp assembly and the laser rod... Agent: Howson & Howson LLP/alliant Techsystems01/20/2011 > 10 patent applications in 6 patent subcategories. recently filed with US Patent Office
20110013652 - Source of optical supercontinuum radiation: A source of optical supercontinuum radiation is disclosed, for generating blue-enhanced spectral components using a pump wavelength of substantially 1064 nm. The source comprises a microstructured optical fibre and a pump laser arranged to generate lasing radiation at the pump wavelength of substantially 1064 nm. The microstructured optical fibre comprises... Agent: Fianium Ltd.
20110013653 - Intra-cavity generation of pulsed coherent radiation in the uv or xuv wavelength range: A radiation source that provides high order harmonic radiation (HHG radiation) in an UV or XUV wavelength range comprising a resonant cavity that guides laser light pulses that includes at least two cavity mirrors, a first non-linear medium that provides the HHG radiation by harmonic generation based on an interaction... Agent: Ip Group Of Dla Piper LLP (us)
20110013654 - Wavelength variable laser device, and method and program for controlling the same: Provided is a wavelength variable laser device wherein an SOA is simplified. The wavelength variable laser device includes: an optical filter formed on a PLC; an SOA that supplies light to the optical filter; a light reflecting section that returns the light transmitted through the optical filter to the SOA... Agent: Mr. Jackson Chen
20110013657 - Gallium nitride-based semiconductor laser diode: Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light... Agent: Venable LLP
20110013656 - Group iii nitride semiconductor laser diode: A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a... Agent: Venable LLP
20110013658 - Infrared semiconductor laser: The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or... Agent: Gauthier & Connors, LLP
20110013655 - Semiconductor laser device: In a semiconductor laser device a dual wavelength semiconductor laser chip is joined onto a submount, junction down, to reduce built-in stress produced between the laser chip and the submount and to decrease polarization angles of the two respective lasers. SnAg solder is used to join the dual wavelength semiconductor... Agent: Leydig Voit & Mayer, Ltd
20110013659 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first... Agent: Ditthavong Mori & Steiner, P.C.
20110013660 - Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body: An optoelectronic semiconductor body comprises a substrate (10), which has on a first main area (12) an epitaxial semiconductor layer sequence (20), suitable for generating electromagnetic radiation, in a first region (14) and a first trench (24) in a second region (22) adjacent to the first region (14), and at... Agent: Occhiuti Rohlicek & Tsao, LLP
20110013661 - Laser crystal device: The present disclosure relates to a laser crystal device (1) for short pulse lasers, comprising a container (4), the interior of which is sealed relative to the environment and which contains a technically pure atmosphere with windows (12, 13) in the side walls (12, 13) for the passage of laser... Agent: Ostrolenk Faber Gerb & Soffen01/13/2011 > 13 patent applications in 9 patent subcategories. recently filed with US Patent Office
20110007760 - Source of femtosecond laser pulses: A source of femtosecond laser pulses (50) comprising a 980 nm picosecond seed pulse source (12), a Ytterbium (Yb) doped fibre amplifier (14) operating in the three-level regime, a passive air-clad fibre (52) and a pulse compressor (16). The seed pulses are spectrally broadened due to self phase modulation (SPM)... Agent: Fianium Ltd.
20110007761 - Temperature control device for optoelectronic devices: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may... Agent: Scully, Scott, Murphy & Presser, P.C.
20110007762 - Optical module: To constitute an optical module in which a comb-shaped submount is fixed on a heat sink and a device having an optical functioning unit is mounted on the comb-shaped submount, a stress buffering block that relaxes a thermal stress acting between the heat sink and the comb-shaped submount is placed... Agent: Buchanan, Ingersoll & Rooney PC
20110007763 - Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser: A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium... Agent: Venable LLP
20110007765 - Laser diode device, method of driving the same, and laser diode apparatus: An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer... Agent: Snr Denton US LLP
20110007764 - Optoelectronic device and method of making same: A device representing a reflector, for example, an evanescent reflector or a multilayer interference reflector with at least one reflectivity stopband is disclosed. A medium with means of generating optical gain is introduced into the layer or several layers of the reflector. The optical gain spectrum preferably overlaps with the... Agent: Pro. Dr. Nikolay Ledentsov
20110007768 - Quantum cascade laser: A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit... Agent: Drinker Biddle & Reath (dc)
20110007767 - Semiconductor component and method for producing a semiconductor component: A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote... Agent: Slater & Matsil, L.L.P.
20110007766 - Structure for improving the mirror facet cleaving yield of (ga,al,in,b)n laser diodes grown on nonpolar or semipolar (ga,al,in,b)n substrates: A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing... Agent: Gates & Cooper LLP Howard Hughes Center
20110007769 - Laser diode: A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with... Agent: K&l Gates LLP
20110007770 - Nitride semiconductor light-emitting device and method for fabrication thereof: An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is... Agent: Harness, Dickey & Pierce, P.L.C
20110007771 - Semiconductor laser apparatus, method of manufacturing the same and optical apparatus: This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor... Agent: Mots Law, PLLC
20110007772 - Phase-matched generation of coherent soft and hard x-rays using ir lasers: Phase-matched high-order harmonic generation of soft and hard X-rays is accomplished using infrared driving lasers in a high-pressure non-linear medium. The pressure of the non-linear medium is increased to multi-atmospheres and a mid-IR (or higher) laser device provides the driving pulse. Based on this scaling, also a general method for... Agent: Jennifer L. Bales01/06/2011 > 8 patent applications in 7 patent subcategories. recently filed with US Patent Office
20110002348 - Adjustable pulsewidth picosecond fiber laser: A pulsed fiber laser generating light pulses in the picosecond range has an adjustable pulsewidth. The fiber laser includes a figure-of-eight type laser cavity, preferably of polarization-maintaining optical fiber, defining reciprocal and non-reciprocal loops. A gain medium is disposed asymmetrically in the reciprocal loop, at a position therealong favoring coupling... Agent: Merchant & Gould PC
20110002349 - Wavelength-tunable laser apparatus and wavelength changing method thereof: An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101... Agent: Mr. Jackson Chen
20110002350 - Method of controlling a diode device for use in optical storage systems: A system and method is provided which compensates for the effects of relaxation oscillations and turn-on delays of diode laser devices. In particular, there is provided a method and system for tuning the shape of the power profile of an output optical signal and its position with respect to a... Agent: Philips Intellectual Property & Standards
20110002351 - Semiconductor laser device: A semiconductor laser device includes: a p-type cladding layer; a p-type cladding layer guide layer; an active layer; an n-type cladding layer guide layer; and an n-type cladding layer, in which each of the p-type and n-type cladding layer guide layers is undoped or close to undoped, the sum of... Agent: Leydig Voit & Mayer, Ltd
20110002352 - Optical waveguide integrated semiconductor optical device and manufacturing method therefor: An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked... Agent: Leydig Voit & Mayer, Ltd
20110002353 - Surface emitting laser, surface emitting laser array, and image formation apparatus: To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current... Agent: Canon U.s.a. Inc. Intellectual Property Division
20110002354 - Semiconductor laser device: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and... Agent: Snr Denton US LLP
20110002355 - Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent leds: A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation... Agent: Philips Intellectual Property & StandardsPrevious industry: Multiplex communications
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