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Coherent light generators December patent applications/inventions, industry category 12/10

20100329287 - Method and device for stabilizing the spectrum of a pulsed coherent optical source: The invention relates to a method for stabilizing the spectrum of a pulsed coherent optical source that comprises controlling the offset frequency ω0 and the repetition rate ωr in order to stabilize the frequencies of the comb lines constituting the optical spectrum thereof. The method comprises forming, from the pulsed... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100329289 - Method and apparatus for generating optical beats: Apparatus comprising an optical fibre laser having at least two laser cores and means arranged to combine laser output from the at least two laser cores at a first end of the optical fibre laser to produce a combined laser output having one or more beat signals.... Agent: Oliff & Berridge, PLC

20100329288 - Optical fiber laser: An optical fiber laser including: a master oscillator; and a power amplifier, the power amplifier including: a plurality of excitation light sources; excitation ports each of which is connected to the excitation light sources and which an excitation light emitted from each of the excitation light source enters; a signal... Agent: Sughrue Mion, PLLC

20100329290 - Lithographic apparatus, excimer laser and device manufacturing method: A CD-pitch dependency for a lithographic pattern printing process is related to the spectral intensity distribution of radiation used for projecting the pattern. A CD-pitch dependency can vary from one system to another. This can result in an iso-dense bias mismatch between systems. The invention addresses this problem by providing... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20100329291 - Multi-spectral laser source employing periodically poled crystal mixer: A multi-spectral laser system produces first and second output frequencies by nonlinear mixing of a first, second, and third laser light frequency in a single periodically polled crystal, where the first and second output frequencies are separated by a range greater than the degeneracy of the crystal.... Agent: Wisconsin Alumni Research Foundation

20100329292 - System, device and method for stabilizing the optical output power of an optical system: A light source system for delivery of light including a light source having an output arranged to emit light in an output path, the output path including an unguided section and an at least partially transmissive optical component wherein the optical component provides at least one residual reflection when the... Agent: Buchanan, Ingersoll & Rooney PC

20100329293 - Methods and apparatus for efficient, low-noise, precision current control: Improved current controllers of the present invention provide efficient, low noise, precision current control for devices having such operational requirements. The current controllers are characterized by a PWM regulator operably connected to a linear regulator. The PWM regulator regulates a voltage drop across the linear regulator, wherein the voltage provided... Agent: Battelle Memorial Institute Attn:IPServices, K1-53

20100329294 - Nitride semiconductor laser device and wafer: Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding... Agent: Harness, Dickey & Pierce, P.L.C

20100329295 - Laser diode: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures,... Agent: Snr Denton US LLP

20100329296 - Method of manufacturing integrated semiconductor laser device, integrated semiconductor laser device and optical apparatus: A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with... Agent: Mots Law, PLLC

20100329298 - Intracavity frequency-converted solid-state laser for the visible wavelength region: The present invention provides an intracavity frequency-converted solid state laser for the visible wavelength region. The laser comprises a semiconductor laser (1) with an extended laser cavity (2). A second laser cavity (4) is formed inside of said extended laser cavity (2). The second laser cavity (4) comprises a gain... Agent: Philips Intellectual Property & Standards

20100329297 - Highly integrable edge emitting active optical device and a process for manufacture of the same: Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that... Agent: Joseph Rumpler

20100322268 - Dynamic compensator for controlling stresses on fiber in fiber optic cables: A dynamic compensator for a fiber optic cable having a jacket which is centered along a longitudinal axis, an elongated buffer tube surrounded by the jacket, and an elongated fiber surrounded by the buffer tube and dimensioned to move radially inwards and outwards within the buffer tube. The dynamic compensator... Agent: Ipg Photonics Corporation

20100322269 - Tunable laser: A tunable laser has a gain material and a mirror defining an external resonant cavity. A tunable Fabry-Perot etalon disposed along the optical path between the mirror and the gain material includes a liquid crystal layer having a variable refractive index to tune the transmission peaks of the etalon and... Agent: Dorr, Carson & Birney, P.C.

20100322270 - Intracavity frequency-converted optically-pumped semiconductor laser with red-light output: In a branched resonator OPS-laser arrangement, a combination of intra-cavity optical parametric generation and intra-cavity sum-frequency mixing provides output radiation in a range between about 550 nanometers about 700 nanometers from an OPS fundamental wavelength in a range between about 900 nm and about 1100 nm.... Agent: Coherent, Inc. C/o Morrison & Forester

20100322271 - Method for driving optical transmitter: A method to control an LD (laser diode) is disclosed. The method compares the operating temperature of the LD with a transition temperature. When the former temperature exceeds the latter, the modulation current is set based on the bias current, which is independently determined by the APC loop. On the... Agent: Smith, Gambrell & Russell

20100322272 - Minimizing power variations in laser sources: The present invention relates generally to semiconductor lasers and laser projection systems. According to one embodiment of the present invention, a projected laser image is generated utilizing an output beam of the semiconductor laser. A gain current control signal is generated by a gain current feedback loop to control the... Agent: Corning Incorporated

20100322273 - Light emission device, light emission device driving method, and projector: A light emission device includes: a first clad layer; an active layer disposed above the first clad layer; a second clad layer disposed above the active layer; a first electrode electrically connected with the first clad layer; and second electrodes electrically connected with the second clad layer, wherein at least... Agent: Harness, Dickey & Pierce, P.L.C

20100322274 - Light transmitter and automatic power control circuit thereof: A light transmitter and an auto-control circuit thereof are provided. The circuit includes a driving module and a feedback module. The driving module is coupled to the feedback module and a load. The driving module provides a driving current for driving the load. The feedback module provides a bias signal... Agent: Jianq Chyun Intellectual Property Office

20100322275 - White light-emitting lamp and illuminating device using the same: A white light-emitting lamp (1) includes a light-emitting portion (9) which is excited by light emitted from a semiconductor light-emitting element (2) to emit white light. The light-emitting portion (9) contains a blue phosphor, a yellow phosphor and a red phosphor. The yellow phosphor is composed of a europium and... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100322276 - Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device: Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the... Agent: Venable LLP

20100322278 - Light emitting device: A light emitting device includes: a single crystal substrate having a plane tilted from a low-index plane and first and second cladding layers sandwiching an active layer, wherein the active layer includes first and second parallel side surfaces, part of the active layer constitutes first and second gain regions, a... Agent: Harness, Dickey & Pierce, P.L.C

20100322277 - Vertical cavity surface emitting laser: A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer... Agent: Canon U.s.a. Inc. Intellectual Property Division

20100322279 - Multiwaveform light source: There is provided a light source apparatus including at least a excitation light source and a photocoupler, a light source medium formed of one kind of a single, rare-earth element doped fiber that is excited by the excitation light source and has two terminals, and an output end formed of... Agent: Crowell & Moring LLP Intellectual Property Group

20100316070 - Asymmetrically perturbed optical fibers for mode transformers: Utilization efficiency of cladding pump light in a cladding pumped optical device is improved by converting higher order modes travelling in the cladding to lower order modes that enter the core region and participate more effectively in the energy exchange process. The mode conversion is achieved by asymmetric perturbations in... Agent: Law Office Of Peter V.d. Wilde

20100316071 - Laser device and method: A laser beam combining and power scaling device and method. A first highly reflective mirror residing perpendicular to the first optical axis reflecting radiation emitted from the first laser head. A first Q-switch in alignment with the first optical axis interposed between the first highly reflective mirror and the first... Agent: Woodling, Krost And Rust

20100316072 - Methods for stabilizing the output of a pulsed laser system having pulse shaping capabilities: Methods stabilize the output of a pulsed laser system using pulse shaping capabilities. In some embodiments, transient effects following a transition between a QCW regime and a pulse shaping regime are mitigated by ensuring that the average QCW optical power substantially corresponds to the average pulsed optical power outputted in... Agent: Merchant & Gould PC

20100316073 - Optically pumped solid-state laser with co-doped gain medium: The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce3+-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce3+-ions is energetically higher... Agent: Philips Intellectual Property & Standards

20100316074 - Semiconductor laser: A semiconductor laser includes a semiconductor laser region and a wavelength-monitoring region. The semiconductor laser region includes a first optical waveguide that includes a gain waveguide, the first optical waveguide having one end and another end opposite the one end. The wavelength-monitoring region includes a second optical waveguide that is... Agent: Smith, Gambrell & Russell

20100316075 - Optical device structure using gan substrates for laser applications: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion... Agent: Townsend And Townsend And Crew, LLP

20100316077 - Patterned light emitting devices: Light-emitting devices, and related components, systems and methods are disclosed. A light-emitting device can include a multi-layer stack of materials that includes a light-generating region and a first layer supported by the light-generating region. During use of the light-emitting device, light generated by the light-generating region can emerge from the... Agent: Luminus Devices , Inc. C/o Wolf, Greenfield & Sacks , P.C.

20100316079 - Sub-wavelength grating integrated vcsel: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way... Agent: John P. O'banion O'banion & Ritchey LLP

20100316076 - Surface emitting photonic device: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining... Agent: Wilmerhale/boston

20100316078 - Surface plasmon generating apparatus and method for making the same: A surface plasmon-generating apparatus includes an active layer including an n-type region formed on one side and a p-type region formed on the other side, the n-type region and the p-type region being in contact with each other to form a pn junction therebetween; a first barrier layer in contact... Agent: Snr Denton US LLP

20100316080 - Semiconductor optical element: A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP cladding layer sequentially arranged on the p-type InP substrate.... Agent: Leydig Voit & Mayer, Ltd

20100316081 - Vertical-cavity surface-emitting laser (vcsel) device and the method of manufacturing thereof: A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post... Agent: Fildes & Outland, P.C.

20100316082 - Nitride semiconductor laser chip: A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar.... Agent: Harness, Dickey & Pierce, P.L.C

20100316083 - Sub-wavelength grating integrated vcsel: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way... Agent: John P. O'banion O'banion & Ritchey LLP

20100316084 - Arrangement for rf power delivery to a gas discharge laser with cascaded transmission line sections: RF power is transmitted to a CO2 gas discharge laser form a source of RF power via a series combination of transmission line sections. The lengths and characteristic impedances of the transmission line sections are selected to transform the impedance of the RF power source to the operating impedance of... Agent: Coherent, Inc. C/o Morrison & Forester

20100316085 - High power solid-state optical amplification process and system: A high power solid-state non-regenerative optical amplification system (100) for amplifying a pulsed optical beam, includes a first optical amplification crystal (C1) and a second optical amplification crystal (C2) for amplifying the optical beam; optical pumping elements for longitudinal pumping amplification crystals (C1, C2); reflective optical elements (M′1, M′2, .... Agent: Young & Thompson

20100309936 - Pulsed microchip laser: The invention relates to a passively triggered microchip laser (1) formed by a cavity closed by an input mirror (4) and an output mirror (5), characterised in that the cavity includes deflection means (9, 10, 11, 12, 13) designed to deflect a light beam (14) between the input mirror (4)... Agent: Arent Fox LLP

20100309937 - Wavelength tunable semiconductor laser apparatus: A semiconductor laser apparatus is provided which can vary an output wavelength of a light source. A semiconductor laser diode and one or more heat source devices arranged around the semiconductor laser diode are integrated on one substrate. The semiconductor laser diode is configured to be uniformly heated by the... Agent: Lahive & Cockfield, LLP Floor 30, Suite 3000

20100309938 - Laser driving device and laser driving method: A laser driving device includes: a pulse signal generating unit that, after a voltage has risen from a predetermined reference voltage to a predetermined output voltage and a time of a sum of an oscillation period of relaxation oscillation and a light emission start time in a predetermined laser diode... Agent: Wolf Greenfield & Sacks, P.C.

20100309939 - Multi-chamber gas discharge laser bandwidth control through discharge timing: A method and apparatus are disclosed for controlling bandwidth in a multi-portion laser system comprising a first line narrowed oscillator laser system portion providing a line narrowed seed pulse to an amplifier laser system portion, may comprise utilizing a timing difference curve defining a relationship between a first laser system... Agent: Matthew K. Hillman Cymer, Inc., Legal Dept.

20100309940 - High power laser package with vapor chamber: A heat spreader structure includes a high power laser with an epi side and an emitting facet. A vapor chamber includes a housing defining an inner vapor cavity and a wick positioned in the vapor cavity to define an evaporation area on one side of the cavity, a condensation area... Agent: Robert A. Parsons

20100309942 - Quantum cascade lasers (qcls) configured to emit light having a wavelength in the 2.5 - 3.8 micrometer band: Quantum cascade lasers (QCLs) with intra-cavity second-harmonic generation configured to emit light in the λ=2.5-3.8 μm band, and methods of use and manufacture.... Agent: Fulbright & Jaworski L.L.P.

20100309941 - Semiconductor laser device: A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element different in oscillation wavelength from the first semiconductor laser element, both formed on a substrate. The first and second semiconductor laser elements have a cavity length of 1500 μm or more, and each have... Agent: Mcdermott Will & Emery LLP

20100309943 - Long wavelength nonpolar and semipolar (al,ga,in)n based laser diodes: A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown... Agent: Gates & Cooper LLP Howard Hughes Center

20100309944 - Surface emitting semiconductor laser and method for producing it: A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side... Agent: Slater & Matsil, L.L.P.

20100309945 - Bandwidth-limited and long pulse master oscillator power oscillator laser systems: Laser systems have a line-narrowed master oscillator and a power oscillator for amplifying the output of the master oscillator. The power oscillator includes optical arrangements for limiting the bandwidth of radiation that can be amplified. The limited amplification bandwidth of the power oscillator is relatively broad compared to that of... Agent: Coherent, Inc. C/o Morrison & Forester

20100309946 - Optical module: To constitute an optical module comprising a mount and a board that supports the mount, wherein a solid-state laser device that oscillates fundamental laser light, a pump light source that pumps the solid-state laser device, and a wavelength converting device that converts a wavelength of the fundamental laser light oscillated... Agent: Buchanan, Ingersoll & Rooney PC

20100303104 - Apparatus and method for removing unwanted optical radiation from an optical fiber: Apparatus comprising a source of optical radiation (15), an optical fibre (1), and an absorbing material (2), wherein; the optical fibre (1) comprises a core (37), at least one cladding (38), and an optical surface (3); the source of optical radiation (15) provides optical radiation (16) that propagates along the... Agent: Axinn, Veltrop & Harkrider LLP Attn. Michael A. Davitz

20100303103 - Fiber laser device: A fiber laser device 100 includes: an pumping light source 11 configured to output pumping light; a rare earth-doped fiber 20 to which the pumping light is input; and a first FBG 30 formed on one side of the rare earth-doped fiber 20 and a second FBG 40 formed on... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100303102 - Optical fiber component and optical module using the same: An optical fiber component comprises an optical fiber that transmits light; and a coreless fiber that is connected to the end surface of the optical fiber and prevents foreign matter from adhering to the end surface of the optical fiber. The optical fiber and the coreless fiber are connected by... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100303105 - Generating pulse trains in q-switched lasers: The invention relates to methods and systems for generating a pulse train having several individual pulses, wherein the individual pulses have a desired pulse characteristic, by means of a Q-switched solid state laser system, which includes, e.g., a modulator for influencing the pulse characteristic of the individual pulses. The methods... Agent: Fish & Richardson PC

20100303106 - Ultra-short pulse laser system and method for producing femtosecond or picosecond pulses: An ultra-short pulse laser system comprising an amplifying laser medium for producing a laser emission, a laser resonator having at least one resonator mirror and a pump source has a gas-filled section with a filling gas, the latter consisting of a single gas or a filling gas mixture differing from... Agent: Muncy, Geissler, Olds & Lowe, PLLC

20100303107 - Methods for obtaining stabilized output beams from frequency converted light sources and frequency converted light sources utilizing the same: A method for operating a frequency converted light source includes sweeping a wavelength control signal of a semiconductor laser over an initial signal range and measuring an optical power of an output beam emitted from a wavelength conversion device coupled to the semiconductor laser. The wavelength control signal of the... Agent: Corning Incorporated

20100303108 - Wavelength converting element and wavelength converting laser apparatus: A wavelength converting element that is of a planar waveguide type, includes a plate-like nonlinear optical material, and performs a wavelength conversion on a fundamental wave of a laser beam by propagating the fundamental wave in a plurality of laser oscillation modes in a direction perpendicular to a main surface... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100303110 - Edge bonded optical packages: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an... Agent: Corning Incorporated

20100303109 - Proximity coupled athermal optical package comprising laser source and compound facet wavelength conversion device: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an... Agent: Corning Incorporated

20100303111 - Pair of optically locked semiconductor narrow linewidth external cavity lasers with frequency offset tuning: An optical phase lock loop (OPLL) system is disclosed that includes a master external cavity laser (ECL), and a substantially identical slave ECL. The master and slave ECLs are fabricated using a planar semiconductor device with waveguide-integrated planar Bragg gratings (PBG). Both the master and slave ECLs have a narrow... Agent: Pillsbury Winthrop Shaw Pittman LLP

20100303113 - Multibeam arrays of optoelectronic devices for high frequency operation: A VCSEL array device formed of a monolithic array of VCSELs and short circuited mesas is disclosed. The VCSELs can be spaced symmetrically or asymmetrical, in a manner to improve power or speed, or in phase and in parallel. The VCSELs are connected to a first metal contact pad formed... Agent: Silversky Group LLC

20100303112 - Solid-state laser element: To achieve a solid-state laser element capable of outputting a high-power laser, in a planar waveguide type solid-state laser element that causes a plurality of fundamental laser beams to oscillate in a direction of an optic axis within a flat plate-like laser medium, and forms a waveguide structure in a... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100303114 - Semiconductor laser: The invention provides a semiconductor laser realizing reduction in an internal loss of light without thickening a cladding layer. The semiconductor laser includes a semiconductor layer on a semiconductor substrate. The semiconductor layer has, in order from the semiconductor substrate side, a lower cladding layer, an active layer, an upper... Agent: Snr Denton US LLP

20100303115 - Method for manufacturing semiconductor laser diode: A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB... Agent: Smith, Gambrell & Russell

20100303116 - Semiconductor laser device and optical apparatus employing the same: This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film... Agent: Ditthavong Mori & Steiner, P.C.

20100303117 - Surface emitting laser: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure... Agent: Fitzpatrick Cella Harper & Scinto

20100303118 - Semiconductor laser device: A semiconductor laser device has structure including: a semiconductor laser chip having an emission surface and a reflection surface which are opposing end surfaces of a resonator; and a photodiode for detecting light that exits from the reflection surface side, the photodiode being used in a wavelength band where a... Agent: Harness, Dickey & Pierce, P.L.C

20100303119 - Microfluidic lasers: The present invention generally relates to lasers comprising fluidic channels, such as microfluidic channels. In some instances, the channel contains two or more fluids. The fluids may remain non-mixed within the channel, for example, due to immiscibility and/or laminar flow within the channel. The fluids may be arranged in the... Agent: Harvard University & Medical School C/o Wolf, Greenfield & Sacks, P.C.

20100303120 - Solid-state laser element: To suppress the amplification of spontaneous emission light in a principal plane width direction to thereby suppress a gain in directions other than a beam axis direction and output a high-power laser, in a solid-state laser element of a plane waveguide type that causes a fundamental wave laser beam to... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100303121 - Achieving low phase noise in external cavity laser implemented using planar lightwave circuit technology: The present invention relates to external cavity laser (ECL) apparatuses and manufacturing processes, and more particularly to implementing low noise narrow bandwidth ECLs on planar lightwave circuit (PLC) platforms for harnessing high-performance, high-stability operation from a compact-footprint, low-power packaged device. An ECL device with narrow linewidth and low noise is... Agent: Pillsbury Winthrop Shaw Pittman LLP

20100303122 - Cavity dynamics compensation in resonant optical modulators: Disclosed are resonant optical modulators, and methods of use thereof, that achieve constant photon populations in the resonator by simultaneously modulating at least two variable modulation parameters.... Agent: Goodwin Procter LLP Patent Administrator

20100303123 - Compact optical resonators: Various embodiments of the present invention are directed to compact, sub-wavelength optical resonators. In one aspect, an optical resonator comprises two approximately parallel reflective structures positioned and configured to form a resonant cavity. The resonator also includes a fishnet structure disposed within the cavity and oriented approximately parallel to the... Agent: Hewlett-packard Company Intellectual Property Administration