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Coherent light generators November recently filed with US Patent Office 11/10

20100296528 - Fiber laser comprising a ring-shaped resonator: The invention relates to a fiber laser comprising a ring-shaped resonator (3). A first section of the resonator is formed by an optical fiber (7) while a second section of the resonator is formed by an optically pumped amplifier fiber (8). The fiber laser further comprises an injection point (4)... Agent: Collard & Roe, P.C.

20100296529 - Mode-locked fiber laser with improved life-time of saturable absorber: A mode locked fiber laser system is arranged to have a lasing bandwidth and having a linear cavity, the cavity including a gain medium, a saturable absorber having a saturation power, and a filter having a spectral response, wherein the mode locked fiber laser system is arranged so that substantial... Agent: Buchanan, Ingersoll & Rooney PC

20100296527 - Passively modelocked fiber laser using carbon nanotubes: A passively modelocked fiber laser utilizes a rare-earth-doped fiber section as the gain medium, which exhibits a relatively high absorption (e.g., peak pump absorption >50 dB/m) and relatively low dispersion (e.g., −20 ps/km-nm<Dg<0). Passive modelocking is provided by a single-walled carbon nanotube (SWNT) saturable absorber, formed on endface portions of... Agent: Wendy W. Koba, Esq.

20100296530 - Method for operating an ignition device, and an ignition device: In a method for operating an ignition device for an internal combustion engine, in particular of a motor vehicle, having a laser device which includes a laser-active solid having a passive Q-switching system as well as an optical amplifier connected downstream from the passive Q-switching system (46), the laser device... Agent: Kenyon & Kenyon LLP

20100296531 - Picosecond laser apparatus and methods for its operation and use: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with... Agent: Banner & Witcoff, Ltd.

20100296532 - Laser device and laser device control data: A laser device includes a resonator having a gain region, a first wavelength selection portion having a periodical peak in wavelength characteristics and a second wavelength selection portion having a periodical peak in wavelength characteristics in a wavelength range smaller than a variable range of an oscillation wavelength at a... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100296533 - Projection with slow relay and fast projection subsystems: In a coherent light projection system including an image forming system, a relay system, a speckle reduction element, and a projection subsystem, the relay system can have a first f-number, and the projection subsystem can have a second f-number less than the first f-number. The relay system can have a... Agent: Raymond L. Owens Patent Legal Staff

20100296534 - Method and device for shielding a high power laser apparatus and high-power-laser optical system employing such a device: Method for shielding a high-power laser apparatus (S) in which a laser beam is generated and then amplified in at least a first amplification stage, including spatial filtering (4) of the amplified laser beam, phase correction (3) carried out on the laser beam before it is spatially filtered, and a... Agent: Young & Thompson

20100296535 - Laser operation for survey instruments: The performance of a laser scanner is optimized in the field by automatically determining appropriate laser parameters for the scan location. A laser control system uses information such as the environmental temperature to select an appropriate range of start points for various laser parameters, such as pump temperature and laser... Agent: Workman Nydegger/leica 1000 Eagle Gate Tower

20100296536 - Lighting device using a laser diode as a source of light emission: A laser diode lighting device for use in and powered through an incandescent, halogen, or fluorescent light bulb alternating current socket is provided. The lighting device includes a laser diode light, a regulation circuit and a base. The regulation circuit converts an alternating current input to a direct current output.... Agent: Maulin V. Shah, Esq.

20100296537 - Optical component and method of manufacturing thereof: An optical component includes a supporter and a semiconductor laser device. The supporter has a metal wiring layer formed over the substrate and a fusing metal layer formed on the metal wiring layer. The semiconductor laser device includes an electrode and stacked semiconductor films including an active layer. A protrusion... Agent: Birch Stewart Kolasch & Birch

20100296538 - Optoelectronic component: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20100296539 - Semiconductor laser and method for manufacturing the same: A semiconductor laser according to the present invention includes a first reflective region and a second reflective region disposed opposite to the first reflective region in a predetermined direction of an optical axis. The first reflective region has a plurality of gain waveguides each including an active layer and a... Agent: Smith, Gambrell & Russell

20100296540 - Resonant cavity complementary optoelectronic transistors: s

20100296541 - Semiconductor laser diode: A semiconductor laser diode includes a semiconductor multilayer structure including a first cladding layer of n-type conductivity, an active layer, and a second cladding layer of p-type conductivity having a ridge portion in an upper portion, which are sequentially formed on a substrate; a current blocking layer formed on the... Agent: Mcdermott Will & Emery LLP

20100296542 - Semiconductor laser apparatus: A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first... Agent: Mcdermott Will & Emery LLP

20100296543 - Flexible microcavity structure made of organic materials using spin-coating technique and method of making: A flexible microcavity structure made of organic materials using spin-coating technique for allowing large area structures using a roll-to-roll process. The structure includes at least one first polymer layer, at least one second polymer layer, and a cavity layer. The cavity layer has quantum dots embedded therein for realizing an... Agent: Fish & Richardson P.C.

20100290487 - Recycling pump-beam method and system for a high-power terahertz parametric source: A method and a system are implemented in the fabrication of a portable high power terahertz beam source that can produce a tunable, high power terahertz beam over the frequency from 0.1 THz to 2.5 THz. The terahertz source employs a recycling pump beam method and a beam quality control... Agent: Naval Research Laboratory Associate Counsel (patents)

20100290488 - Green laser generation device, and portable electronic machine having laser projection display using the said device: The present invention relates to a green laser generation device which can be applied to a cellular phone, and more particularly to a green laser generation device which is ultra compact in size having volume of 1 cc or less, despite having a built-in thermo electric cooler, and has sufficient... Agent: Ampacc Law Group

20100290489 - electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method: An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent... Agent: Kathy Manke Avago Technologies Limited

20100290490 - Heat sink and assembly or module unit: A heat sink for cooling parts, subassemblies, modules, or similar components, for cooling electrical or electronic components. The heat sink includes at least one cooling element which forms at least one cooling area for connecting the component that is to be cooled and which is made of a metallic material... Agent: Welsh Flaxman & Gitler

20100290491 - Laser diode driving device and image forming apparatus including the same: A disclosed laser diode driving device drives laser diodes with driving currents obtained by adding switch currents to corresponding bias currents and includes a common switch current generating circuit configured to generate a common switch current according to an input signal; switch current generating circuits provided for the corresponding laser... Agent: Cooper & Dunham, LLP

20100290492 - Nitride semiconductor laser device and method of producing the same: A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in... Agent: Harness, Dickey & Pierce, P.L.C

20100290493 - Laser diode and method of manufacturing the same: A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in... Agent: Sonnenschein Nath & Rosenthal LLP

20100290494 - Quantum cascade laser suitable for portable applications: A highly portable, high-powered infrared laser source is produced by intermittent operation of a quantum cascade laser power regulated to a predetermined operating range that permits passive cooling. The regulation process may boost battery voltage allowing the use of a more compact, low-voltage batteries.... Agent: Roeder & Broder LLP

20100290495 - laser device, a light signal generating device, and an optical resonator and a method for producing light: A laser device (1) comprises a ridge waveguide (2) comprising an upper cladding layer (5) and a lower cladding layer (6), between which is located an active layer (7). A ridge (8) formed in the upper cladding layer (5) defines the lateral width of a light guiding region (9) in... Agent: Sughrue Mion, PLLC

20100290496 - Nitride semiconductor laser device: A nitride semiconductor laser device includes: an active layer made of a nitride formed on a semiconductor substrate; a stripe-shaped ridge waveguide including a cladding layer having a ridge structure in its upper portion, formed on the active layer; a first current blocking layer transparent to light generated from the... Agent: Mcdermott Will & Emery LLP

20100290497 - Waveguide device having delta doped active region: Embodiments of the invention include a laser structure having a delta doped active region for improved carrier confinement. The laser structure includes an n-type cladding layer, an n-type waveguide layer formed adjacent the n-type cladding layer, an active region formed adjacent the n-type waveguide layer, a p-type waveguide layer formed... Agent: Smith Frohwein Tempel Greenlee Blaha LLC

20100290498 - Semiconductor laser device and display: A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one... Agent: Mots Law, PLLC

20100284428 - Fiber laser light source: A fiber laser light source is provided with a laser resonator including a pair of fiber gratings optically connected to a fiber in a state that the fiber is interposed between the paired fiber gratings. The reflection center wavelength of a laser-exit side fiber grating, out of the paired fiber... Agent: Wenderoth, Lind & Ponack L.L.P.

20100284429 - Pulsed light generator and pulsed fiber laser: A pulsed light generator of the invention includes: an excitation light source; a fiber grating into which excitation light from the excitation light source enters; a rare-earth doped optical fiber optically coupled with the fiber grating, in which a rare-earth element is doped into a core, serving as an optical... Agent: Sughrue Mion, PLLC

20100284430 - Systems and methods for generating high repetition rate ultra-short optical pulses: Systems, methods, circuits and/or devices for generating high repetition rate ultra-short pulses are described. As one of many examples, an optical pulse generating laser system is described that produces mode-locked optical pulses. The laser system incorporates an optical pulse generation device that includes two optical loops coupled via a beam... Agent: Neugeboren O''dowd, PC (ppc)

20100284431 - Optical pulse train generator: An optical pulse train generator 10 includes beat light generation means 11 for generating a beat light 21 having a predetermined repeated frequency, a highly nonlinear fiber 12 for generating a pulse train 22 formed by adding a side mode to the beat light 21 by a four-wave mixing (FWM),... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100284432 - Surface emitting laser array and production method therefor: A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined... Agent: Canon U.s.a. Inc. Intellectual Property Division

20100284433 - Semiconductor laser device and display: A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting... Agent: Mots Law, PLLC

20100284434 - Edge emitting semiconductor laser chip having at least one current barrier: An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the operation of the semiconductor laser chip, and at least two current barriers, arranged on different sides of the contact... Agent: Ip Group Of Dla Piper LLP (us)

20100284435 - Red-shifted optical feedback laser: A semiconductor laser is provided, and a method of producing 600-1100 laser light, and a method of making a semiconductor laser is provided. The semiconductor laser includes a quantum well layer with a spectral profile of peak wavelength λg, a laser gain region, a window region and an optical feedback... Agent: Slater & Matsil, L.L.P.

20100278199 - Pulsed laser system with optimally configured saturable absorber: A high power pulsed laser system is configured with at least two gain blocks and with at least one saturable absorber (SA) coupled to the output and input of the respective gain blocks. The SA is configured so that Qsat_sa<Qsat_gb, wherein Qsat_sa is a saturation energy of the SA, and... Agent: Ipg Photonics Corporation

20100278200 - External frequency-quadruped 1064 nm mode-locked laser: The output of a mode-locked solid-state NIR laser having a pulse duration less than 50 picoseconds at a pulse-repetition frequency is frequency doubled in a nonlinear crystal to provide green radiation. The green radiation is type-I frequency doubled in a BBO crystal to provide UV radiation. The green radiation is... Agent: Coherent, Inc. C/o Morrison & Forester

20100278201 - Wavelength division multiplexing system: A wavelength division multiplexing system has an array of wavelength-tunable lasers with at least two wavelength-tunable lasers emitting laser light at mutually different wavelengths, a first diffraction grating, an optical fiber, a second diffraction grating, and an array of photodetectors. The laser light emitted by the different wavelength-tunable lasers wavelengths... Agent: Lerner Greenberg Stemer LLP

20100278202 - Semiconductor laser driving device and image forming apparatus having the same: A semiconductor laser driving device and an image forming apparatus are disclosed that are capable of accurately detecting the deterioration of the semiconductor laser with a smaller circuit size and regardless of the variation of the characteristics of the semiconductor laser and the use conditions of the semiconductor laser by... Agent: Cooper & Dunham, LLP

20100278204 - Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing: A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a... Agent: Coherent, Inc. C/o Morrison & Forester

20100278205 - Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate... Agent: Morrison & Foerster LLP

20100278203 - Radiation-emitting semiconductor chip: The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material... Agent: Slater & Matsil, L.L.P.

20100278206 - Passivation of a resonator end face of a semiconductor laser with a semiconductor superlattice: The semiconductor laser has a resonator end face (15) and a semiconductor superlattice (16) which is applied to the resonator end face (15). The semiconductor superlattice (16) acts as a passivation layer for the resonator end face (15) and has a number of layers (16.1, 16.2, 16.3, 16.3), the material... Agent: Kf Ross PC

20100278207 - Semiconductor laser element: A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction,... Agent: GlobalIPCounselors, LLP