SEARCH:      Monitor Keywords |  Custom RSS

Coherent light generators September class, title,number 09/10

20100246609 - Semiconductor lasing device: The present application provides a semiconductor Fabry-Perot dual mode lasing device having terahertz characteristics resulting in significant advantages over the prior art including for example operation at room temperatures and the absence of re-growth processing requirements.... Agent: Brooks, Cameron & Huebsch , PLLC

20100246610 - Mid-ir laser instrument for analyzing a gaseous sample and method for using the same: An optical nose for detecting the presence of molecular contaminants in gaseous samples utilizes a tunable seed laser output in conjunction with a pulsed reference laser output to generate a mid-range IR laser output in the 2 to 20 micrometer range for use as a discriminating light source in a... Agent: Fish & Richardson, PC

20100246611 - Laser micromachining with tailored bursts of short laser pulses: A series of laser pulse bundles or bursts are used for micromachining target structures. Each burst includes short laser pulses with temporal pulse widths that are less than approximately 1 nanosecond. A laser micromachining method includes generating a burst of laser pulses and adjusting an envelope of the burst of... Agent: Electro Scientific Industries/stoel Rives, LLP

20100246612 - Mode-locked laser: A mode-locked laser includes a two-electrode semiconductor laser (3) including a saturable absorber section (31) and gain section (32), and an optical waveguide (4) formed outside the gain section (32) of the two-electrode semiconductor laser. The optical waveguide (4) includes a ring resonator (43) having a resonator length which is... Agent: Mr. Jackson Chen

20100246613 - Semiconductor laser, method for generating laser beam and method for reducing a spectral line-width of laser beam: A semiconductor laser is provided capable of generating very narrow laser beams and having stable characteristics, a method for generating the laser beams and a method for reducing a spectral line-width of the laser beams. The semiconductor laser includes a semiconductor active layer, a photonic crystal optical waveguide forming a... Agent: Turocy & Watson, LLP

20100246614 - Wavelength variable light source system: There is provided a wavelength variable light source system capable of changing wavelength and intensity of output signal light and of improving preset accuracy and stability of the wavelength and strength of the output signal light. The system determines the both or either one of a target value for controlling... Agent: Woodcock Washburn LLP

20100246615 - Intracavity harmonic generation using a recycled intermediate harmonic: Lasers configured for intracavity harmonic generation of second and higher order harmonic laser beam energy include mode-matching optics, such as a curved mirror, for recycling an unused portion of an intermediate harmonic laser beam energy (e.g., second harmonic laser beam energy) to improve higher order harmonic laser beam energy generation... Agent: Electro Scientific Industries/stoel Rives, LLP

20100246616 - Cavity-dumped pulsed solid-state laser with variable pulse-duration: In a cavity-dumped, repetitively-pulsed, solid-state laser cavity dumping is protracted over a predetermined time longer than a round-trip time of the resonator of the laser. The cavity dumping is effected by a Pockels cell optical switch. During a dumping period a voltage applied to the Pockels cell falls in a... Agent: Coherent, Inc. C/o Morrison & Forester

20100246617 - Narrow surface corrugated grating: Narrow surface corrugated gratings for integrated optical components and their method of manufacture. An embodiment includes a grating having a width narrower than a width of the waveguide on which the grating is formed. In accordance with certain embodiments of the present invention, masked photolithography is employed to form narrowed... Agent: Intel/bstz Blakely Sokoloff Taylor & Zafman LLP

20100246618 - External resonator-type wavelength tunable laser device: The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a... Agent: Mr. Jackson Chen

20100246619 - Eye safe dermatological phototherapy: A method and apparatus are disclosed for improving bodily safety during exposure to an intense pulsed light source by diverging the light, such as with a diffuser. At a first position of the distal end of the light source the energy density of exit light from the distal end is... Agent: Proskauer Rose LLP

20100246620 - Laser device: A laser device includes: an optical modulator that is optically coupled to a semiconductor laser mounted on a first mounting portion; a second mounting portion that is separately away from the first mounting portion; a bridge that couples the first mounting portion and the second mounting portion; a driver IC... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100246621 - Light source control apparatus and light source apparatus: A light source control apparatus includes a laser having a wavelength that varies depending on temperature; a wavelength monitor that monitors the wavelength of light output from the laser; a temperature controller that controls the temperature of the laser based on an output of the wavelength monitor; a temperature monitor... Agent: Fujitsu Patent Center Fujitsu Management Services Of America, Inc.

20100246622 - Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region,... Agent: Sonnenschein Nath & Rosenthal LLP

20100246625 - Nitride semiconductor laser: A nitride semiconductor surface-emitting laser includes a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction. The surface-emitting laser includes an active layer, the two-dimensional photonic crystal layer, a semiconductor layer, and an electrode in this order. The two-dimensional photonic crystal layer contains p-type conductive InxGa1-xN (0≦x≦1)... Agent: Canon U.s.a. Inc. Intellectual Property Division

20100246624 - Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer: A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer... Agent: Ditthavong Mori & Steiner, P.C.

20100246623 - Semiconductor laser device: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with an facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a... Agent: Leydig Voit & Mayer, Ltd

20100246626 - Side-emitting led light source for backlighting applications: This invention relates to a side-emitting light device comprising two sub-assemblies which are optically bonded together. Each sub-assembly comprises a substrate, at least one light source disposed on the substrate, and a luminescent plate optically bonded with the at least one light source. The light source emits light of a... Agent: Philips Intellectual Property & Standards

20100246627 - Optical semiconductor device: An optical semiconductor device includes: a beam splitter that splits an input optical axis into a first split axis having a first split angle and a second split axis having a second split angle larger than the first split angle; a first unit that is located on the first split... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100246629 - Multiple-wavelength laser device: A multiple-wavelength laser device includes a first semiconductor laser chip having two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; a second semiconductor laser chip having two or less than two modulable unit laser portions, outputs of the unit... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100246628 - Semiconductor light-emitting device: Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100238957 - Opo laser mid-ir wavelength converter: A wavelength converter comprising an arsenic sulfide (As—S) chalcogenide glass fiber coupled to an optical parametric oscillator (OPO) crystal and a laser system using an OPO crystal coupled to an As—S fiber are provided. The OPO receives pump laser radiation from a pump laser and emits laser radiation at a... Agent: Naval Research Laboratory Associate Counsel (patents)

20100238958 - Fiber-based wavelength agile visible laser source: A system is provided for providing high power, wavelength tunable, laser radiation, the system comprising: a plurality of seeder sources, each the source of the plurality having a different seeder wavelength; a Ytterbium doped amplifier chain, receiving radiation from the plurality of seeder sources and at least one pump source;... Agent: Bae Systems

20100238960 - Intracavity frequency conversion of laser radiation: A laser device with frequency conversion, the device comprising a complex optical cavity comprising two cavity parts with two different levels of circulating intracavity power wherein there is placed at least one non-linear crystal (30) is placed within the cavity part of higher circulating power and an active medium (21)... Agent: Senniger Powers LLP

20100238959 - Solid-state laser device and image display device: A semiconductor laser light source 10 emits a laser beam for pumping. An optical resonator 2 includes a solid laser crystal 15 to be excited by the incident of a laser beam to oscillate a fundamental wave 20 and a pair of fundamental wave reflective coats 14, 16 arranged at... Agent: Wenderoth, Lind & Ponack L.L.P.

20100238961 - System and method to regulate high current radiation sources: Disclosed is a high current radiation system. The system includes a high current radiation source to generate radiation and an analog circuit to generate, based, at least in part, on an input signal representative of the present current level delivered to the high current radiation source and a user-controlled input... Agent: Mintz, Levin, Cohn, Ferris, Glovsky And Popeo, P.c

20100238962 - External cavity laser light source: Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and... Agent: Rabin & Berdo, PC

20100238963 - Gallium nitride based semiconductor laser device: A gallium nitride based semiconductor laser device comprises: a first cladding layer having a first conductivity type; an active layer provided on the first cladding layer; an overflow prevention layer having a second conductivity type provided on the active layer; and a second cladding layer having the second conductivity type... Agent: Banner & Witcoff, Ltd. Attorneys For Client No. 000449, 001701

20100238965 - Semiconductor laser: A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlxGayIn1-x-yP (where 0≦x<1 and 0<y<1) based active layer, a second spacer layer, a second multi-layer reflection mirror, and a lateral mode adjusting layer on a substrate in this order from the... Agent: Lerner, David, Littenberg, Krumholz & Mentlik

20100238964 - Semiconductor laser structure: A semiconductor laser structure includes: a plurality of laser structure units, wherein each laser structure unit includes a N conductive type clad layer, a light emission layer and a P conductive type clad layer, which are stacked in this order; and a tunnel junction layer disposed between two adjacent laser... Agent: Posz Law Group, PLC

20100238966 - Light source apparatus and projector: A light source apparatus includes: a light emitter; a pair of electrodes for driving the light emitter; and an external resonant cavity that reflects part of the light emitted from a light-exiting end surface of the light emitter. The light emitter includes an active layer that generates light, an internal... Agent: Oliff & Berridge, PLC

20100232457 - Laser device: Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide to stabilize a potential difference between a first... Agent: Fitzpatrick Cella Harper & Scinto

20100232458 - Wavelength tunable external cavity laser: Provided is a wavelength tunable external cavity laser comprising: a semiconductor laser diode that outputs multi-wavelength optical signals and is mounted on a first substrate; and a wavelength tunable reflection filter that is mounted on a second substrate, outputs single wavelength optical signals among the multi-wavelength optical signals using resonance... Agent: Blakely Sokoloff Taylor & Zafman LLP

20100232460 - Electromagnetically pumped alkali metal vapor cell system: An electromagnetic pumped alkali metal vapor cell system is provided. The system comprises a vapor cell and windings. The vapor cell contains alkali metal and a buffer. The windings are positioned around the vapor cell and are configured to create an electromagnet field in the vapor cell when an AC... Agent: Iplm Group, P.A.

20100232459 - Pulse laser light timing adjusting device, adjusting method, and optical microscope: To provide a pulse laser light timing adjusting device capable of easily adjusting pulse laser light timing, a timing adjusting method, and an optical microscope. An optical microscope in accordance with the present invention includes mirror pairs 21 and 31 to generates the first timing adjusting optical beam in which... Agent: Mcginn Intellectual Property Law Group, PLLC

20100232461 - Bias signal generation for a laser transmitter in a passive optical network: The teachings presented herein disclose a method and apparatus for controlling the optical power of a laser in a passive optical network transmitter that outputs a modulated optical signal responsive to a modulated input signal. In one or more embodiments, such a control method comprises detecting the voltage of the... Agent: Emcore Corporation

20100232462 - Thermally optimized mechanical interface for hybrid integrated wavelength division multiplexed arrayed transmitter: An apparatus comprising a plurality of laser dice and a heat sink positioned between the laser dice and thermally coupled to the laser dice. Also included is an apparatus comprising a chip comprising a laser core, a stopper at least partially defining a groove, wherein the stopper and the groove... Agent: Futurewei Technologies, Inc. C/o Conley Rose, P.C.

20100232463 - Laser safety system: A computer may include a database and a power reducing routine. The database may be configured to store an input power level of an input laser beam transmitted onto and storing power within a gain module. The database may be further configured to store a discharge power level of at... Agent: Klintworth & RozenblatIPLLC And The Boeing Company

20100232464 - Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser: A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100232466 - Laser diode device: A laser diode device comprises an n-type cladding layer containing aluminum (Al); an active layer containing indium (In), gallium (Ga) and nitrogen (N); and a codoped layer that is provided between the substrate and the n-type cladding layer. The codoped layer is also containing gallium (Ga) and nitrogen (N), and... Agent: Sonnenschein Nath & Rosenthal LLP

20100232467 - Light emitting device: A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a... Agent: Harness, Dickey & Pierce, P.L.C

20100232465 - Semiconductor light emitting element and manufacturing method thereof: A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the... Agent: Solaris Intellectual Property Group, PLLC

20100232468 - Semiconductor laser device: High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition... Agent: Antonelli, Terry, Stout & Kraus, LLP

20100232469 - Method and apparatus for efficiently operating a gas discharge excimer laser: Systems and methods for efficiently operating a gas discharge excimer laser are disclosed. The excimer laser may include a chamber containing laser gases, first and second electrodes within the chamber, and a plurality of reflective elements defining an optical resonant cavity. The method may include setting the laser gases to... Agent: Knobbe Martens Olson & Bear LLP

20100226395 - Gain-switched fiber laser system: This invention discloses a method to control laser dynamics in a gain-switched fiber laser so as to generate stable, clean pulses in an all-fiber format. The gain-switched fiber laser is suitable as a standalone laser source, and as a pump source for harmonic generation and an optical-parametric-oscillator.... Agent: Coherent, Inc. C/o Morrison & Forester

20100226396 - Optical arrangement for pumping solid-state lasers: In an optical arrangement for pumping solid-state lasers, there is the object of producing an intensity distribution across the beam cross section of the pump radiation with a rectangular intensity profile, which intensity distribution is homogeneous at least in a region corresponding to the Rayleigh range in the direction of... Agent: Duane Morris LLP - Ny Patent Department

20100226397 - Power stabilizied laser diode array: A system for controlling optical-power stability of emitting laser diodes (204), the laser diodes exhibiting temperature changes at the laser diode junctions (312), the temperature changes are predicted according to the laser diodes duty cycle. The system includes, a laser diodes arranged to emit light on a target (14); a... Agent: Amelia A. Buharin Patent Legal Staff

20100226398 - Systems and methods for upgrading non-compliant laser devices: An assembly for use with a non-compliant laser device comprising the combination of an emission indicator assembly configured to indicate the actuation of the non-compliant laser device, a key control assembly configured to selectively provide electrical continuity throughout the circuitry of non-compliant laser device, and a remote interlock assembly configured... Agent: Steven L. Nichols Van Cott, Bagley, Cornwall & Mccarthy

20100226399 - Method of driving gan-based semiconductor light emitting element, method of driving gan-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device: A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, includes the steps of: starting light emission by... Agent: K&l Gates LLP

20100226400 - Fabricating electronic-photonic devices having an active layer with spherical quantum dots: A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including... Agent: Hitt Gaines, PC Alcatel-lucent

20100226402 - Laser diode and method of manufacturing the same: A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration... Agent: Rader Fishman & Grauer PLLC

20100226401 - Nitride compound semiconductor element and method for manufacturing same: The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the... Agent: Mark D. Saralino (pan) Renner, Otto, Boisselle & Sklar, LLP

20100226403 - Laser diode device: A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face side of the substrate and having a contact... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100226404 - Semiconductor light emitting devices including in-plane light emitting layers: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted... Agent: Philips Intellectual Property & Standards

20100226405 - High brightness laser diode module: A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber.... Agent: Ipg Photonics Corporation

20100226406 - Silicon optical package with 45 degree turning mirror: An optical package includes a sub-mount, an edge-emitting laser mounted on the sub-mount, a collimating ball lens mounted on the sub-mount adjacent to the edge-emitting laser, a mirror mounted on the sub-mount adjacent to the collimating ball lens. The sub-mount is made of a bottom wafer. A lid is bonded... Agent: Kathy Manke Avago Technologies Limited

20100226407 - Laser media with controlled concentration profile of active laser ions and method of making the same: A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embodiment, a concentration of the first... Agent: Pillsbury Winthrop Shaw Pittman LLP (raytheon Sas)

20100220750 - Terahertz laser components and associated methods: A system generates FIR radiation. An electron source generates an electron beam. A first horn interacts with the electron beam to produce the FIR radiation. A second grating horn receives the electron beam from the first horn and emits it as a collimated free wave or Smith-Purcell radiation.... Agent: Lathrop & Gage LLP

20100220752 - 810 nm ultra-short pulsed fiber laser: Methods and systems for generating ultra-short fiber laser pulses are disclosed, including generating a signal laser pulse from a seed fiber laser; using a pulse stretcher comprising an input and an output, wherein the signal laser pulse is coupled into the input of the pulse stretcher; using a Tm:ZBLAN fiber... Agent: John Martin Taboada

20100220751 - All-normal-dispersion femtosecond fiber laser: A modelocked fiber laser is designed to have strong pulse-shaping based on spectral filtering of a highly-chirped pulse in the laser cavity. The laser generates femtosecond pulses without a dispersive delay line or anomalous dispersion in the cavity.... Agent: Jones, Tullar & Cooper, P.C.

20100220753 - Monofrequency intra-cavity frequency-tripled continuous laser: A diode-pumped intra-cavity frequency-tripled continuous laser device, this device includes: an amplifying medium, a birefringent non-linear medium for frequency doubling, a birefringent non-linear medium for frequency tripling; and a polarizing medium arranged so as to constitute an intra-cavity birefringent filter or Lyot filter, the Lyot filter being adapted to allow... Agent: Greer, Burns & Crain

20100220754 - Method of driving laser diode device and laser diode equipment: A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current... Agent: Sonnenschein Nath & Rosenthal LLP

20100220755 - Spectrally tunabler laser module: The present invention relates to a laser module, comprising a flat substrate basis with a mounting region and with at least one heat conducting region adjoining the mounting region, one heating element arranged in the mounting region and one temperature sensor element arranged in the mounting region.... Agent: Marshall & Melhorn, LLC

20100220756 - Laser apparatus and extreme ultraviolet light source apparatus: A laser apparatus comprises an amplifier including at least one of a MOPA and a MOPO each of which amplifies a single-longitudinal or multiple-longitudinal mode laser light, an amplifiable agent of the amplifier being a molecular gas, a master oscillator constructed from a semiconductor laser being able to oscillate a... Agent: Mcdermott Will & Emery LLP

20100220757 - Semiconductor light-emitting element and process for production thereof: One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100220758 - Direct modulated modified vertical cavity surface emitting lasers: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has... Agent: Kinney & Lange, P.A.

20100220761 - Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer: A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface... Agent: Venable LLP

20100220760 - Nitride semiconductor laser device: The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface of the nitride semiconductor layer. The surface of the... Agent: GlobalIPCounselors, LLP

20100220759 - Semiconductor laser and method of manufacturing semiconductor laser: Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of... Agent: Young & Thompson

20100220762 - High power semiconductor opto-electronic device: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20100220763 - Surface emitting laser array: Provided is a surface emitting laser array using a photonic crystal, which allows an active layer to be shared without disconnecting the active layer between the individual surface emitting lasers adjacent to each other, and enables high-density arraying easily. The surface emitting laser array includes: at least two surface emitting... Agent: Fitzpatrick Cella Harper & Scinto