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Coherent light generators August inventions list 08/10

20100215062 - Wavelength or pulsewidth tunable mode-locked fiber laser system: A wavelength-tunable mode-locked fiber laser system is provided and includes an optical cavity. The optical cavity outputs an output laser pulse having an adjustable principal wavelength, and includes a short-wavelength-pass filter, a polarization controller, an optical gain fiber and a fiber. The short-wavelength-pass filter produces an intracavity laser pulse. The... Agent: Volpe And Koenig, P.C.

20100215063 - Pulse laser apparatus: The pulse laser light source 1 is provided with an excitation light source 10, lenses 11 through 13, a dichroic mirror 14, an amplifier medium 21, a first reflection portion 22, a laser medium 23, a third reflection portion 24, a saturable absorber 25 and a second reflection portion 26.... Agent: Drinker Biddle & Reath (dc)

20100215064 - Low loss crystal as a large aperture ao deflector: An acousto-optic deflector includes a body of material through which a laser beam to be modulated passes. The material has an acoustic attenuation in the range of 0.15 to 1.0 dB/μs-GHz2 and operates in a UV range of about 150 to 400 nm. A transducer is bonded to the body... Agent: Goodwin Procter LLP Attn: Patent Administrator

20100215065 - Coherent multiple-stage optical rectification terahertz wave generator: The present invention coherent multiple-stage optical rectification terahertz wave generator discloses the generation of single-cycle terahertz radiation with two-stage optical rectification in GaSe crystals. By adjusting the time delay between the pump pulses employed to excite the two stages, the terahertz radiation from the second GaSe crystal can constructively superpose... Agent: Bacon & Thomas, PLLC

20100215066 - System, method, and apparatus to provide laser beams of two or more wavelengths: A system, apparatus, and method may provide laser beams of two or more wavelengths from diode pumped solid-state laser sources (220, 222, 224). The beam paths of these laser beams with different wavelengths, which are generated by the laser sources (220, 222, 224), may be aligned along a common optical... Agent: Mintz, Levin, Cohn, Ferris, Glovsky And Popeo, P.c

20100215067 - Grazing-incidence-disk laser element: A solid-state gain element including a thin doped region in which an optical signal propagates through the thin doped region at a large angle with respect to the normal to the thin doped region, reflects at a boundary of the thin doped region, and passes through the thin doped region... Agent: Lando & Anastasi, LLP

20100215068 - Frequency converted laser sources and methods for operating frequency converted laser sources: A method for operating a frequency converted laser source comprising at least one semiconductor laser and a wavelength conversion device optically coupled to at least one semiconductor laser may include operating the frequency converted laser source to produce a frequency converted output beam from the wavelength conversion device and intermittently... Agent: Corning Incorporated

20100215069 - Laser oscillator and laser beam oscillation method: By using a ceramics laser medium such as Nd:YAG ceramics or Yb:YAG ceramics, division of a lateral mode pattern to a local mode is suppressed so that single frequency, linear polarization oscillation are achieved in TEM00 mode. A laser oscillator comprising a laser light source for oscillating the pumping light,... Agent: Pearne & Gordon LLP

20100215070 - Multiwavelength optical device and manufacturing method of multiwavelength optical device: A multiwavelength optical device includes a substrate; a first mirror section including a plurality of first mirror layers stacked on the substrate; an active layer stacked on the first mirror section, the active layer including a light emission portion; a second mirror section including a plurality of second mirror layers... Agent: Fujitsu Patent Center Fujitsu Management Services Of America, Inc.

20100215071 - Semiconductor laser: A semiconductor laser including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially laminated on a p-type semiconductor substrate; and a diffraction grating in the n-type semiconductor layer along the direction of an optical waveguide. The reflectance of light on two facing laser end surfaces is... Agent: Leydig Voit & Mayer, Ltd

20100215072 - Semiconductor device and optical module: A semiconductor laser element 10 according to the present invention comprises a waveguide 12 of a high mesa type. And then such the waveguide 12 comprises an oblique end face 17 as an emitting facet that is different from a cleaved end face 16. And hence it becomes possible to... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100215073 - Light-emitting device and method of manufacturing the same: A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side... Agent: Sonnenschein Nath & Rosenthal LLP

20100208756 - Tunable laser module based on polymer waveguides: The present invention relates to a laser module based on a waveguide tunable in a broad wavelength band. More specifically, the laser module comprises: a broadband light source based on an external resonator that generates optical signals; a waveguide; at least one Bragg grating formed on the waveguide; an optical... Agent: Clark & Brody

20100208757 - Method of ferroelectronic domain inversion and its applications: The present invention is related to a method to control the nucleation and to achieve designed domain inversion in single-domain ferroelectric substrates (e.g. MgO doped LiNbO3 substrates). It includes the first poling of the substrate with defined electrode patterns based on the corona discharge method to form shallow domain inversion... Agent: Russ Weinzimmer

20100208758 - Light source device, projector device, monitor device, and lighting device: The controller 170 controls the output power of the semiconductor laser device 100a depending on the temperature of the semiconductor laser device 100a acquired by the temperature sensor 130. The controller 170 references the correspondence table 510 when the sensor temperature Ts is obtained, obtains the output power PWs corresponding... Agent: Oliff & Berridge, PLC

20100208760 - Surface emitting semiconductor laser and method for fabricating the same: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer... Agent: Fildes & Outland, P.C.

20100208762 - Laser diode having nano patterns and method of fabricating the same: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type... Agent: H.c. Park & Associates, PLC

20100208761 - Quantum well active region with three dimensional barriers and fabrication: The invention provides a quantum well active region for an optoelectronic device. The quantum well active region includes barrier layers of high bandgap material. A quantum well of low bandgap material is between the barrier layers. Three-dimensional high bandgap barriers are in the quantum well. A preferred semiconductor laser of... Agent: Greer, Burns & Crain

20100208763 - Semiconductor chip and method for manufacturing a semiconductor chip: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the... Agent: Slater & Matsil, L.L.P.

20100208764 - Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and optical information processing device: A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an... Agent: Fildes & Outland, P.C.

20100202477 - Wavelength conversion laser device: A wavelength conversion laser device includes a solid-state laser element having a waveguide structure including a laser medium that amplifies laser beams by providing a gain generated due to absorption of pump light to the laser beams and outputs a fundamental wave, and a wavelength conversion element having a waveguide... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100202478 - Laser light source: The present invention relates to a laser light source having a structure for narrowing a wavelength bandwidth of output light. The laser light source comprises, at least, a laser resonator, a pumping light source, an optical path switch device, a diffraction grating, and a total reflection mirror. The laser resonator... Agent: Venable LLP

20100202479 - Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus: A heat sink has a first flat plate, a partition plate, and a second flat plate. The first flat plate has an upper surface in which a first recess is formed. The second flat plate has a lower surface in which a second recess is formed, and an upper surface... Agent: Drinker Biddle & Reath (dc)

20100202480 - Semiconductor light-emitting element and method for manufacturing the same: A semiconductor light-emitting element s includes a semiconductor substrate; a semiconductor laminate structure having a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer, and a second conductivity-type contact layer sequentially arranged on the semiconductor substrate; a stripe-shaped waveguide region on an upper surface of the semiconductor... Agent: Leydig Voit & Mayer, Ltd

20100202481 - Light emitting devices with phosphosilicate glass: A light-emitting device is provided which includes a gain medium having an optically-active phosphosilicate glass, wherein the phosphosilicate glass includes at least one active ion dopant and from about 1 to 30 mol % of phosphorus oxide. The phosphorous oxide may be present in an effective amount for reducing any... Agent: Merchant & Gould PC

20100202482 - Semiconductor device: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the... Agent: Rader Fishman & Grauer PLLC

20100202484 - Light emitting and lasing semiconductor devices and methods: A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including... Agent: Martin Novack

20100202483 - Two terminal light emitting and lasing devices and methods: A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type,... Agent: Martin Novack

20100202485 - Semiconductor laser and method of manufacturing the same: Provided is a semiconductor laser including: a substrate (semiconductor substrate); an optical waveguide (active layer waveguide) with a mesa structure that includes an active layer (strain-compensated multiple quantum well active layer) including Al, is provided over the semiconductor substrate; a semiconductor protective layer that is provided so as to cover... Agent: Sughrue Mion, PLLC

20100202486 - Vertical cavity surface emitting laser and method of manufacturing thereof: A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in... Agent: Rader Fishman & Grauer PLLC

20100202487 - Semiconductor laser and method for operating a semiconductor laser: A semiconductor laser includes an active region designed as a DFB laser and a passive resonator section that is optically coupled to the active region. The active region has a first section with a Bragg grating and a second section with a second Bragg grating that differs from the first... Agent: Faegre & Benson LLP Patent Docketing - Intellectual Property

20100195675 - Terahertz and millimeter wave source: The present invention relates generally to a terahertz and millimeter wave source, and more particularly, but not exclusively, to structures for coupling the terahertz electromagnetic waves out of the source.... Agent: Dann, Dorfman, Herrell & Skillman

20100195678 - Apparatus for coupling light into an optical wave guide, a laser system with such an apparatus, and a preform to manufacture the apparatus: The invention relates to an apparatus for coupling light into an optical wave guide, a laser system with such an apparatus, and a preform to manufacture the apparatus for coupling light into an optical wave guide with the aid of a pumping fiber to guide the light, whereby the optical... Agent: Henry M Feiereisen, LLC Henry M Feiereisen

20100195677 - Pulsed laser sources: Various embodiments include modelocked fiber laser resonators that may be coupled with optical amplifiers. An isolator may separate the laser resonator from the amplifier, although certain embodiments exclude such an isolator. A reflective optical element on one end of the resonator having a relatively low reflectivity may be employed to... Agent: Knobbe Martens Olson & Bear LLP

20100195676 - System and method for coupling multiple beams to an active fiber: A method for coupling multiple pump light beams to an active fiber. The method includes providing an inverted conical disk, concave lens or glass wedge. The method further includes providing an active fiber in approximately the center of the inverted conical disk (or concave lens) or at a bottom facet... Agent: Andrews Kurth LLP, Intellectual Property Department

20100195679 - Solid-state laser comprising a resonator with a monolithic structure: The invention relates to a solid-state laser, comprising a resonator (1) with a monolithic structure consisting of a laser medium, on which a passive Q-switch (12) and at least one resonator mirror are directly formed, and comprising several laser diodes (22) which, as a pump medium, radiate into the resonator... Agent: Dykema Gossett PLLC

20100195680 - Picosecond laser apparatus and methods for its operation and use: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with... Agent: Banner & Witcoff, Ltd.

20100195681 - Optical scanning device and image forming apparatus: An optical scanning device includes a vertical-cavity surface-emitting laser light source that emits laser beams perpendicular to a top surface thereof; a first optical system that couples the beams from the light source; a deflecting unit that deflects the beams; a second optical system that guides the beams from the... Agent: Dickstein Shapiro LLP

20100195682 - Laser pulse generating apparatus and method: Jitter and waveform are improved by reducing the wavelength spectrum width of a laser beam pulse. In a laser pulse generating apparatus according to the present invention, a semiconductor laser device, a polarization maintaining optical fiber, an optical reflection filter having bandpass characteristics using an FBG whose passband can be... Agent: Foley & Lardner LLP

20100195683 - Curved coupled waveguide array and laser: A semiconductor laser that includes an active region, claddings and electrical contacts to stimulate emissions from the active region, where a coupled waveguide guides emission. The waveguide includes a broad area straight coupling region that fans out into an array of narrower Individual curved coupled waveguides at an output facet... Agent: Greer, Burns & Crain

20100195684 - Photoelectrochemical etching for laser facets: A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.... Agent: Gates & Cooper LLP Howard Hughes Center

20100195685 - Semiconductor laser element and method of manufacturing semiconductor laser element: A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100195686 - Quantum cascade detector type device with high injector: said fourth subband being such that, in the absence of any electrical field applied to the electrodes, the injector level of the injection barrier is less than the level of said fourth subband and greater than the level of the third subband and that, in the presence of a field... Agent: Damon M. Thurston

20100195688 - Semiconductor laser and method for manufacturing the same: The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a second conductive type of an upper clad layer 18,... Agent: Kratz, Quintos & Hanson, LLP

20100195687 - Semiconductor laser device: A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide... Agent: Rabin & Berdo, PC

20100195689 - Surface emitting laser element array: A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser... Agent: Kubotera & Associates, LLC

20100195691 - Laser diode and semiconductor light-emitting device producing visible-wavelength radiation: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a... Agent: Dickstein Shapiro LLP

20100195690 - Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same: The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack (2) is epitaxially grown on a semiconductor substrate (1). The layer stack comprises an active region (4), an upper distributed Bragg reflector (5) and... Agent: Philips Intellectual Property & Standards

20100195692 - Apparatus and method for purging and recharging excimer laser gases: A method of recharging an excimer laser Includes opening an outlet in a chamber containing spent laser gas at a first pressure, opening an inlet in the chamber, the inlet in communication with a laser gas container at a second pressure higher than the first pressure, and flowing fresh laser... Agent: Knobbe Martens Olson & Bear LLP