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Coherent light generators July category listing 07/10

20100189136 - Apparatus and method for generating high power optical pulses and narrow spectrum by single mode fiber laser: A laser system for effective injection seeding is configured with a master oscillator lasing a narrowband seed radiation which is characterized by a single longitudinal master mode injected into a slave oscillator so that the latter generates a broadband slave radiation with a dominant slave mode and side slave modes.... Agent: Ipg Photonics Corporation

20100189138 - High power fiber laser system with high quality beam: A high power fiber laser system has a combiner configured of a plurality of single mode (SM) fibers which are fused together so as to define an output end of the fiber combiner. The fused SM fibers radiate respective fiber outputs, which collectively define a multimode (MM) combiner output. The... Agent: Ipg Photonics Corporation

20100189137 - Optical device and method of controlling a refractive index profile in the optical device: An optical device includes an optical material comprising active dopant ions and absorber dopant ions spaced apart from the active dopant ions. The active dopant ions are provided to absorb a first radiation and convert a portion of the first radiation into sensible heat. A concentration profile of the absorber... Agent: Pillsbury Winthrop Shaw Pittman LLP (raytheon Sas)

20100189139 - Pulse modulation method and optical fiber laser: The present invention relates to a pulse modulation method and the like having a structure for effectively suppressing nonlinear optical phenomena which increase as an optical pulse becomes wider when amplifying the optical pulse with a predetermined period as seed light. A modulator performs pulse modulation for a laser light... Agent: Venable LLP

20100189140 - Laser diode end pumped monoblock laser: A monoblock laser that has a laser cavity having a laser gain material, a Q switch optically coupled to the laser gain material, and an OPO material optically coupled to the Q switch. A laser pump is spaced from an end of the laser cavity. The laser pump has an... Agent: Department Of The Army Cecom Legal Office, Fort Belvoir

20100189141 - Method for producing an externally injected gain switch laser ultrashort pulse: A method for producing ultrashort pulses from an external injection gain-switched laser comprises the following steps: inputting an ultrashort optical pulse signal having multi-longitudinal mode spectral characteristic, produced by a gain-switched laser, into an optical amplifier to amplify it; selecting, by a spectral component signal selector, a narrow spectral component... Agent: Gifford, Krass, Sprinkle,anderson & Citkowski, P.c

20100189142 - Surface-emitting external cavity laser device: A surface-emitting extended cavity laser with intracavity frequency conversion is provided with at least one surface-emitting laser element (1) with multiple layers to obtain laser light at a fundamental frequency, reflector means, spaced from the laser element (1) to form an external cavity (12), a frequency conversion device (3), arranged... Agent: Philips Intellectual Property & Standards

20100189143 - Wavelength tunable laser: A wavelength tunable laser includes a first facet including a high reflection coating film; a gain region disposed adjacent to the first facet, the gain region including two or more light emitting devices that are arranged parallel to one another; an optical wavelength multiplexer optically connected to the light emitting... Agent: Smith, Gambrell & Russell

20100189144 - Semiconductor laser apparatus: A semiconductor laser apparatus includes a heat dissipating member including a main body having a front end portion that extends in a left-right direction and a pair of protruding portions that protrude forward from both sides of the front end portion; a semiconductor laser device bonded along the front end... Agent: Frommer Lawrence & Haug LLP

20100189145 - Laser with gain medium suppressing higher order modes to provide lasing output with high beam quality: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate... Agent: Electro Scientific Industries/stoel Rives, LLP

20100189146 - Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor... Agent: Ditthavong Mori & Steiner, P.C.

20100189148 - Group iii nitride semiconductor laser: An active layer 19 is provided between a first optical guiding layer 21 and a second optical guiding layer 23. The active layer 19 can include well layers 27a, 27b, and 27c and further includes at least one first barrier layer 29a provided between the well layers. The first and... Agent: Venable LLP

20100189150 - Light emitting and receiving device: A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has... Agent: Harness, Dickey & Pierce, P.L.C

20100189147 - Semiconductor devices and methods for generating light: Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light... Agent: Kathy Manke Avago Technologies Limited

20100189149 - Wavelength stabilized multi-transverse optical mode laser diodes: A multi-transverse-optical-mode heterojunction diode laser characterized by wavelength control of its output. The wavelength control or the control of multi-transverse-optical-modes may be achieved by, for example, selectively etching a layer to partially remove it and possibly followed by epitaxial regrowth, or by selectively converting a layer to an insulating material... Agent: Patzik, Frank & Samotny Ltd.

20100189151 - Planar waveguide laser device: A planar waveguide laser device forms a waveguide by a plate-like laser medium having birefringence and clad attached to at least one of the surfaces of the laser medium perpendicular to its thickness direction, amplifies laser light by a gain produced by excitation light incident on the laser medium, and... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100189152 - High power semiconductor laser diode: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20100189153 - Method of producing a radiation-emitting component and radiation-emitting component: A method of producing a radiation-emitting component is provided. A far field radiation pattern is predetermined. From the predetermined radiation pattern a refractive index profile for the radiation-emitting component is determined in a direction extending perpendicularly to a main emission direction of the component. A structure is determined for the... Agent: Slater & Matsil, L.L.P.

20100189154 - Semiconductor optical device: A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate... Agent: Miles & Stockbridge PC

20100189155 - Laser light emitting device: Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2... Agent: Rabin & Berdo, PC

20100189156 - Radio frequency excited gas laser source: There is described a gas laser comprising a pair of substantially mutually parallel and opposed electrodes (17, 37), between which a volume is defined containing a gas in which said electrodes generate a discharge. At opposed ends of the electrodes, in said volume, mirrors (65) are arranged to define a... Agent: Mcglew & Tuttle, PC

20100183037 - Fiber cutting mechanism and laser light source application apparatus comprising the mechanism: Provided is a fiber cutting mechanism that prevents secondary utilization of a fiber laser light source incorporated in a device that uses a laser light. With a characteristic fiber cutting mechanism, when a laser device is separated from a laser light source application apparatus, at least a fiber 26 is... Agent: Wenderoth, Lind & Ponack L.L.P.

20100183038 - Magnetic damping of tuning arm in an external cavity laser: The present application is directed to a tuning arm system for use in a tunable external cavity diode laser system and includes a tuning arm body, at least one prism support coupled to the tuning arm body, at least one component support coupled to the prism support and configured to... Agent: Newport Corporation

20100183040 - Laser source device and laser processing device: A laser source device includes an optical amplifier having an optical amplifying medium that is configured to amplify a seed beam when the seed beam and an exciting beam are entered, a seed beam source for emitting a laser beam as the seed beam, and an exciting beam source for... Agent: Rabin & Berdo, PC

20100183039 - Two-dimensional diode-laser array with broad-band output: It is demonstrated that substantial operating-parameter-dependent temperature-differences can exist between diode-laser bars in pulsed operation of a stack of such bars arranged to provide a two-dimensional array of diode-laser emitters. These differences can produce distortion of the aggregate output spectrum of the stack. By selecting particular nominal emitting wavelengths of... Agent: Coherent, Inc. C/o Morrison & Forester

20100183041 - Semiconductor laser element and semiconductor laser device: A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active... Agent: Lerner, David, Littenberg, Krumholz & Mentlik

20100183042 - Optical diode structure and manufacturing method thereof: An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second... Agent: Kirton And Mcconkie

20100183043 - Integrated photonic circuit: An integrated photonic circuit includes waveguides (12-19) and other photonic components. The photonic circuit has a first part (1) and a second part (2), the first part and the second part being connected to a mirror in the form of a half 2×2 multimode interferometer (MMI) (32), which comprises solely... Agent: Young & Thompson

20100177792 - Fiber fuse terminator, fiber laser, and optical transmission line: A fiber fuse terminator which is used to terminate a fiber fuse, comprising: an optical fiber which includes a core and a cladding having holes extending in a longitudinal direction thereof, in which: a refractive index of the core of the optical fiber is higher than a refractive index of... Agent: Sughrue Mion, PLLC

20100177793 - Passive phase control in an external cavity laser: An external-cavity laser module includes a package defining an enclosure, the package including a base having a surface internal to the enclosure, a thermoelectric cooler within the enclosure, the thermoelectric cooler including an upper carrier plate and a lower carrier plate, the lower carrier plate being placed on the internal... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100177794 - Pulse temporal programmable ultrafast burst mode laser for micromachining: A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast... Agent: Electro Scientific Industries/stoel Rives, LLP

20100177795 - Apparatus and method for stabilizing frequency of laser: A frequency-stabilized laser apparatus and a method for stabilizing the frequency of a laser are disclosed. A semiconductor laser emits a beam. An external reflector has a resonance frequency and feeds back the emitted beam to the semiconductor laser if the frequency of the emitted beam is equal to the... Agent: Cantor Colburn, LLP

20100177796 - Laser device and heat sink with core to manage stress due to thermal expansion: A laser module comprising a laser device attached to a heat sink that is configured to provide a relatively low thermal resistance for thermal management of the laser device, and an aggregate coefficient of thermal expansion (CTE) that is substantially matched to the CTE of the laser device for reducing... Agent: Fountain Law Group, Inc.

20100177797 - Apparatus and method for laser processing a material: Apparatus for laser processing a material (8) with optical radiation (T), which apparatus comprises a seed laser (1) pumped by a seed pump (2), an amplifier (3) pumped by an amplifier pump (4), a controller (5), and a scanner (6), wherein the controller (5) controls the seed pump (2), the... Agent: Axinn, Veltrop & Harkrider LLP Attn. Michael A. Davitz

20100177798 - Passively mode locked quantum cascade lasers: This invention relates to a self-induced transparency mode-locked quantum cascade laser having an active section comprising a plurality of quantum well layers deposited in alternating layers on a plurality of quantum barrier layers and form a sequence of alternating gain and absorbing periods, said alternating gain and absorbing periods interleaved... Agent: Juneau Partners

20100177799 - Surface light emitting semiconductor laser element: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for... Agent: Robert J. Depke Lewis T. Steadman

20100172380 - Mode-locked laser: The present disclosure provides in a first aspect a mode-locked laser for generating laser pulses. The mode-locked laser comprises an optical coupler and a first optical path capable of carrying optical signals from and to the optical coupler. The first optical path includes an optical amplifier that is arranged so... Agent: Senniger Powers LLP

20100172381 - Apparatus and method for generating short optical pulses: An apparatus for generating short optical pulses is provided having a storage medium capable of storing optical energy, a first module for delivering pumping optical pulses or continuous beam into the storage medium to energize the storage medium, and a second module for delivering one or more trigger optical pulses... Agent: Kenneth J. Lukarcher, Esq. South Winton Court

20100172382 - Apparatus and method for generating frequency-variable signal: An apparatus for generating a frequency-variable signal includes a light source; first and second resonators, to which the optical signals from the light source are input; a structure optically connected to the first resonator so as to be deformable by strain; a first and a second optical fiber gratings located... Agent: Bacon & Thomas, PLLC

20100172383 - Multivariable control system with state feedback: A system and method for controlling the output of a semiconductor laser is presented. The system and method includes using non-linear equations to calculate a state space model of the laser around an operating point. Adaptive algorithms are calculated and control signals determined using a controller to determine appropriate control... Agent: Fulwider Patton LLP

20100172384 - Circuit and method for controlling light-emitting components: In order to further develop a circuit arrangement or circuit, in particular driver circuit, and a method for controlling at least one light-emitting component, in particular at least one electro-optical transducer, for example at least one light-emitting diode (LED) or electroluminescent diode or at least one laser, such as at... Agent: Shlesinger, Arkwright & Garvey LLP

20100172385 - Circuit and method for controlling light-emitting components: Circuit arrangement or circuit, in particular driver circuit, and a method for controlling at least one light-emitting component, such as an electro-optical transducer, a light-emitting diode (LED), an electroluminescent diode, a laser, or a semiconductor laser, by switching a switching element between a first switching position and a second switching... Agent: Shlesinger, Arkwright & Garvey LLP

20100172386 - Particle damage protection for high power co2 slab laser mirrors: A CO2 gas discharge laser includes elongated planar live and ground electrodes vertically spaced and electrically insulated from each. The electrodes are spaced apart by ceramic spacer strips arranged along the edges of the electrodes. An auxiliary electrode is located at each end of the live electrode, co-planar with the... Agent: Coherent, Inc. C/o Morrison & Forester

20100172387 - Nitride semiconductor laser diode: A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the... Agent: Mcdermott Will & Emery LLP

20100172388 - Light emitting device: A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100172389 - Two-dimensional photonic crystal plane emission laser: A two-dimensional photonic crystal plane emission laser of the invention includes a two-dimensional photonic crystal which has a two-dimensional photonic crystal area and a light reflecting area, and which selects a wavelength of light to be generated in an active layer. The light reflecting area is formed in such a... Agent: Sidley Austin LLP

20100172390 - Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack... Agent: Venable LLP

20100166025 - High-power short-wavelength fiber laser device: A high-power, short-wavelength fiber laser device combines the known advantages and well-developed technology of long-wavelength fiber lasers with the concepts of both non-linear frequency doubling and non-linear sum frequency mixing to generate visible blue laser light at a wavelength of about 427 nm. The device includes a thulium fiber laser... Agent: Ipg Photonics Corporation

20100166026 - High-power narrowed-linewidth fiber laser system: A high-power narrow-linewidth fiber laser system includes a seed oscillator with multiple resonant cavities and an amplifier stage. The seed oscillator includes a gain fiber, a pump source to introduce pump light into the gain fiber, a single-mode output fiber arranged at the end of the active gain fiber, a... Agent: Ipg Photonics Corporation

20100166027 - Laser apparatus with all optical-fiber: A laser apparatus with all optical-fiber includes a plurality of pumping light sources in different wave bands and an optical-fiber laser system. The optical-fiber laser system includes an optical fiber at least doped with erbium (Er) element and doped with or not doped with ytterbium (Yb) element according to a... Agent: Jianq Chyun Intellectual Property Office

20100166028 - Laser apparatus and output control method of laser apparatus: A laser apparatus includes: a laser light source; an output member for receiving and transmitting a laser light flux generated by the laser light flux, and outputting a laser light flux; an optical aligning member for positioning the laser light flux generated by the laser light source to the output... Agent: Brinks Hofer Gilson & Lione

20100166029 - Apparatus for selectively distributing energy from a laser beam: An assembly for distributing laser energy is provided that is formed using a compact rigid housing with a sealed beam path contained therein. The assembly employs a monolithic housing with modular collimator and mirror switching components installed therein to reduce its size while maintaining a sealed beam path thereby reducing... Agent: Ipg Photonics Corporation

20100166030 - Exposure apparatus, light source apparatus and method of manufacturing device: An apparatus exposes a substrate via a pattern of a reticle using pulsed light generated by a light source, and includes a controller configured to control the light source so that the oscillation frequency of the light source changes periodically while the apparatus exposes the substrate. The oscillation frequency is... Agent: Canon U.s.a. Inc. Intellectual Property Division

20100166031 - Laser diode driver architectures: Laser diode driver architectures are disclosed. Some example current drivers are described, including a current channel to provide an output current. The current channel includes a current mirror with emitter degeneration, a startup transistor coupled to the current mirror to generate a DC bias on the current mirror, a beta... Agent: Texas Instruments Incorporated

20100166032 - Buried aperture nitride light-emiting device: A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an... Agent: JasIPConsulting

20100166033 - Semiconductor light-emitting device: A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100166034 - Surface emitting laser: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.... Agent: Fitzpatrick Cella Harper & Scinto