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Coherent light generators May archived by USPTO category 05/10

20100128744 - Spectrally tailored pulsed fiber laser oscillator: High power optical pulses generating methods and laser oscillators are provided. A light generating module generates seed optical pulses having predetermined optical characteristics. A spectrum tailoring module is then used to tailor the spectral profile of the optical pulses. The spectral tailoring module includes a phase modulator which imposes a... Agent: Merchant & Gould PC

20100128745 - Current driven frequency-stepped radiation source and methods thereof: A wavelength tunable system including: a laser having a lasing cavity and an external cavity; a frequency-adjuster in the external cavity; and an adjustable current source to adjust the laser diode current, and a method of use as defined herein.... Agent: Corning Incorporated

20100128746 - Littman configured frequency stepped laser: A wavelength tunable system including a laser having a lasing cavity and an external cavity, the cavities having a common optical axis; a reflective grating fixed in the external cavity; a collimating lens between the lasing cavity and the reflective grating; and an adjustable reflective mirror defining one end of... Agent: Corning Incorporated

20100128747 - Polarization purity control device and gas laser apparatus provided with the same: the calcium fluoride crystal substrate being formed by a flat plate having a laser beam entering surface and a laser beam exiting surface running in parallel with the (111) crystal face, the Brewster angle being selected for the incident angle, the rotation angle around the [111] axis operating as a... Agent: Kratz, Quintos & Hanson, LLP

20100128748 - Monitoring method and device for monitoring a forward voltage of a laser diode in a laser diode driver integrated circuit (ic): A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.... Agent: Kathy Manke Avago Technologies Limited

20100128749 - Vertical-cavity surface-emitting semiconductor laser diode and method for the manufacture thereof: The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength λ,... Agent: Lathrop & Gage LLP

20100128750 - Semiconductor device and fabrication method for the same: The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second... Agent: Mcdermott Will & Emery LLP

20100124244 - Semiconductor laser device: A semiconductor laser device includes a semiconductor layer including an active layer. The active layer includes: a gain region; an end face window region formed in a region of the active layer including an end face of the semiconductor layer, and having a larger band gap energy than the gain... Agent: Mcdermott Will & Emery LLP

20100124243 - Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same: A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the... Agent: Myers Bigel Sibley & Sajovec, P.A.

20100124245 - Semiconductor laser and manufacturing process thereof: A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer disposed above the first upper cladding layer and having a... Agent: Sughrue Mion, PLLC

20100124246 - Method for production of a plurality of semicoductor chips, and a semiconductor component: A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20100118897 - Multi-core fiber for optical pumping device and manufacturing method thereof, optical pumping device, fiber laser and fiber amplifier: A multi-core fiber for an optical pumping device is provided. The multi-core fiber includes a plurality of optical fibers that are inserted into holes of an alignment member. The optical fibers and the alignment member are integrated by heating. The alignment member includes a material that has a lower softening... Agent: Sughrue Mion, PLLC

20100118898 - Mode selection technique for a laser: A mode selection technique in a laser is described wherein a recess is formed in a surface of a waveguide in the laser. The recess provides a region of free space propagation within the waveguide which preferentially selects the lowest order mode. A mode selective RF excited CO2 slab laser,... Agent: Jenkins, Wilson, Taylor & Hunt, P. A.

20100118899 - Generating laser pulses of prescribed pulse shapes programmed through combination of separate electrical and optical modulators: A programmable laser pulse combines electrical modulation of the pulse frequency and optical modulation of the pulse shape to form laser pulses of prescribed pulse shapes. A prescribed pulse shape features high peak power and low average power. The laser system disclosed also allows for power-scaling and nonlinear conversions to... Agent: Electro Scientific Industries/stoel Rives, LLP

20100118900 - Generation of profiled light packets: Exemplary systems and methods are directed toward the creation of packets of light. A packet contains one or more pulses of light. In some embodiments, the packet may contain two, ten, 100, 1000, 1E6, or more pulses of light. The packet may be characterized by many of the same properties... Agent: Carr & Ferrell LLP

20100118901 - Hermetically-sealed rf feed-through with integrated capacitor: A carbon-dioxide (CO2) gas-discharge slab laser includes elongated discharge-electrodes in a sealed enclosure. Radio Frequency (RF) power is supplied to the electrodes via an impedance matching network and a co-axial electrical low inductance transmission line feed-through sealed to the enclosure. The feed-trough includes two spring contacts which are configured to... Agent: Coherent, Inc. C/o Morrison & Forester

20100118902 - Unitized cooling module for laser diode array: The unitized cooling module for a laser diode array of the invention has at least one cooling unit. The cooling unit has an inlet main channel, an outlet main channel, an inlet subchannel, an outlet subchannel and a chamber. The inlet subchannel connects the inlet main channel and the chamber,... Agent: Wpat, PC Intellectual Property Attorneys

20100118903 - Solid state laser device with reduced temperature dependence: The present invention relates to a solid state laser device with a solid state gain medium between two resonator end mirrors (3, 5) and a GaN-based pump laser (1) arranged to optically pump the solid state gain medium. The solid state gain medium is a Pr3+-doped crystalline or polycrystalline host... Agent: Philips Intellectual Property & Standards

20100118905 - Nitride semiconductor laser diode and manufacturing method thereof: A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-x N (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active layer formed on the n-type cladding layer, and a p-type... Agent: Mcdermott Will & Emery LLP

20100118904 - Semiconductor laser device: A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three... Agent: Leydig Voit & Mayer, Ltd

20100118906 - Semiconductor laser: A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100118907 - Surface-emission laser diode and fabrication process thereof: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least... Agent: Cooper & Dunham, LLP

20100118908 - Semiconductor laser device: A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region... Agent: Ditthavong Mori & Steiner, P.C.

20100118909 - Miniature high-power laser diode device: The present invention provides a miniature high-power laser diode device, which includes a base, a laser chip, an optical fiber guider, and an optical fiber. The base has a groove and a disposing area, and the groove connects to the disposing area. The laser chip is disposed on the disposing... Agent: Wpat, PC Intellectual Property Attorneys

20100111118 - Light coupler and fiber laser system including the same: A light coupler emitting a high power laser with a high beam quality and a fiber laser system including the light coupler is disclosed. The light coupler includes a first optical fiber bundle comprising a plurality of first optical fibers having either a single-mode core or a few-mode core and... Agent: Rabin & Berdo, PC

20100111119 - External resonator type wavelength variable semiconductor laser: In an external resonator type semiconductor wavelength tunable laser apparatus using a wavelength tunable mirror or a wavelength tunable filter which uses a refractive index change of liquid crystal, a resonant frequency is set as FR, when a response of the refractive index change to a drive voltage frequency of... Agent: Mr. Jackson Chen

20100111120 - Pulsed laser source with adjustable grating compressor: Various embodiments described herein relate to a laser source for producing a pulsed laser beam comprising a plurality of ultrashort optical pulses having a variable repetition rate. In one embodiment, the laser source comprises a fiber oscillator, which outputs optical pulses and a pulse stretcher disposed to receive the optical... Agent: Knobbe Martens Olson & Bear LLP

20100111121 - Laser gain medium and laser oscillator using the same: A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain... Agent: Sughrue Mion, PLLC

20100111122 - High output, mid infrared laser source assembly: A laser source assembly (10) for providing an assembly output beam (12) includes a first MIR laser source (352A), a second MIR laser source (352B), and a beam combiner (244). The first MIR laser source (352A) emits a first MIR beam (356A) that is in the MIR range and the... Agent: Roeder & Broder LLP

20100111123 - Driver circuit of light-emitting element: A driver circuit is provided which comprises a series-connected unit having a light-emitting element and a current limiting inductor directly connected to the light-emitting element, a regenerative diode which is connected in parallel to the series-connected unit and which regenerates energy stored in the current limiting inductor, a transistor which... Agent: Osha Liang L.L.P.

20100111124 - Pumped semiconductor laser systems and methods: A method for emitting laser radiation includes: emitting first laser radiation using a first laser, wherein said first laser is a laser diode; receiving the first laser radiation by a second laser comprising CdSe(1−x)Sx (cadmium selenium sulfide, cadmium selenium, or cadmium sulfide), wherein x is between 0 and 1, inclusively;... Agent: U S Army Research Laboratory Attn: Rdrl-loc-i

20100111126 - Semiconductor lasers: In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main... Agent: Miles & Stockbridge PC

20100111125 - Vertical-cavity surface-emitting laser diode (vcsel), method for fabricating vcsel, and optical transmission apparatus: Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that... Agent: Fildes & Outland, P.C.

20100111127 - Quantum cascade laser: A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser... Agent: Drinker Biddle & Reath (dc)

20100111128 - Selective area metal bonding si-based laser: A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for... Agent: Seed Intellectual Property Law Group PLLC

20100111129 - Laser diode and method of manufacturing the same: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel... Agent: Sonnenschein Nath & Rosenthal LLP

20100111130 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating... Agent: Ditthavong Mori & Steiner, P.C.

20100111131 - Semiconductor laser apparatus: A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer... Agent: Mcdermott Will & Emery LLP