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Coherent light generators February patent applications/inventions, industry category 02/10

20100046560 - Dispersion managed fiber stretcher and compressor for high energy/power femtosecond fiber laser: Methods and systems for generating high energy, high power, ultra-short laser pulses are disclosed, including coupling an electromagnetic radiation pulse emitted from a seed to a photonic crystal fiber stretcher; coupling the electromagnetic radiation pulse exiting the photonic crystal fiber stretcher to a preamplifier; coupling the electromagnetic radiation pulse exiting... Agent: John Martin Taboada

20100046561 - High energy pulse suppression method: A laser processes a workpiece with laser pulses delivered at random time intervals and at substantially constant energy levels by characterizing the laser cavity discharge behavior and utilizing that information for adjusting dummy pulse time periods to compensate for the energy errors. Dummy pulses are laser pulses that are blocked... Agent: Electro Scientific Industries/stoel Rives, LLP

20100046562 - Tunable laser device and a method for producing light of respective selectable wavelengths: A tunable laser device (1) comprises integrally formed first and second ridge waveguides (5, 6). A longitudinally extending ridge (12) defines first and second light guiding regions (19, 20) of the first and second waveguides (5, 6) which communicate with each other. A plurality of first slots (27) extending laterally... Agent: Sughrue Mion, PLLC

20100046563 - Multibeam laser diode: A multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the protruding streaks and the contact electrodes. The contact electrodes and the... Agent: Rader Fishman & Grauer PLLC

20100046564 - Semiconductor device and electronic equipment using same: A semiconductor device includes: a first lead having an element mounting portion; a second lead located in a same plane as the first lead, with a predetermined space left between the first lead and the second lead; a molding encapsulant made of a resin for fixing the leads; and a... Agent: Mcdermott Will & Emery LLP

20100046566 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device includes at least a first cladding layer of a first conductive type, an active layer, a second cladding layer of a second conductivity type, and a contact layer of the second conductivity type stacked in this order on a substrate, and further includes a ridge... Agent: Mcdermott Will & Emery LLP

20100046565 - Vertical cavity surface emitting laser: A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in... Agent: Rader Fishman & Grauer PLLC

20100046567 - Propagation of misfit dislocations from buffer/si interface into si: Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are... Agent: Weaver Austin Villeneuve & Sampson LLP

20100046568 - Quantum cascade laser amplifier with an anti-reflection coating including a layer of yttrium fluoride: A quantic cascade laser amplifier (12) having an active zone (20) includes a stack of raw layers of semi-conductor materials formed in an epitaxial manner on a substrate layer (16) of indium phosphide (InP) or gallium arsenide (GaAs) bearing the active zone (20), and a vertical anti-reflection coating (34) that... Agent: Young & Thompson

20100046569 - Silicon-based lens support structure for diode laser: An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support... Agent: Gerald Ho Kim

20100046571 - Surface emitting laser device: A surface emitting laser device can further improve the light emission efficiency thereof to enlarge the degree of freedom of the device. The surface emitting laser device includes an active layer 103, a photonic crystal layer disposed to be adjacent to the active layer, an electrode 108 disposed on the... Agent: Fitzpatrick Cella Harper & Scinto

20100046570 - Surface-emitting laser: Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection... Agent: Fitzpatrick Cella Harper & Scinto

20100046572 - Photonic-crystal-based photon extractor for high-yield optical microsources: The invention relates to a photon extractor comprising a photonic-crystal-based membrane having a plane defined by two perpendicular directions, comprising an array of features and a cavity devoid of features, from which photons may be extracted, characterized in that the membrane comprises at least one region close to the cavity,... Agent: Lariviere, Grubman & Payne, LLP

20100040093 - Laser beam source device, lighting device, image display apparatus, and monitoring apparatus: A laser beam source device includes: a light source which emits light having fundamental wavelength; a wavelength conversion element which converts the light having fundamental wavelength into light having conversion wavelength; a resonance element which transmits first light converted into the conversion wavelength light and reflects light not converted; an... Agent: Workman Nydegger 1000 Eagle Gate Tower

20100040094 - Optical systems for laser arrays: Surface emitting laser arrays with intra-cavity harmonic generation are coupled to an optical system that extracts harmonic light in both directions from an intra-cavity nonlinear optical material in such a way that the focusing properties of the light beams are matched.... Agent: Morrison Ulman Nupat, LLC

20100040097 - Method and device for carrier envelope phase stabilisation: A method of stabilizing a carrier envelope phase of laser pulses generated with a laser device, comprising the steps of generating laser pulses with a seed laser unit, amplifying the laser pulses with an amplifier unit, generating an amplifier output signal derived from the laser pulses amplified with the amplifier... Agent: Ip Group Of Dla Piper LLP (us)

20100040096 - Spectral spreading and control device for high peak power pulse lasers: The present invention relates to a spectral stretching and control device for high peak power pulse lasers, which does not limit the extraction efficiency of the amplifiers in the CPA chain into which said device can be inserted, and it is characterized in that it comprises an acousto-optical device for... Agent: Lowe Hauptman Ham & Berner, LLP

20100040095 - Systems and methods for controlling a pulsed laser by combining laser signals: An ultra-short pulsed laser system comprises an optical combiner, optical amplifier, optical pulse compressor, and optical separator. The optical combiner is configured to combine a primary optical pulse with a secondary optical signal to generate a combined optical signal. The primary optical pulse and the secondary optical signal have a... Agent: Carr & Ferrell LLP

20100040098 - Laser diode illuminator device and method for optically conditioning the light beam emitted by the same: A laser diode illuminator device and a method for optically conditioning the output beam radiated from such a device, so that highly-demanding illumination application requirements that call for high output powers within a specified field of illumination can be addressed. At the heart of the device is a two-dimensional stack... Agent: Merchant & Gould PC

20100040099 - Bias signal generation for a laser transmitted in a passive optical network: The teachings presented herein disclose a method and apparatus for controlling the optical power of a laser in a passive optical network transmitter that outputs a modulated optical signal responsive to a modulated input signal. In one or more embodiments, such a control method comprises detecting the peak amplitude of... Agent: Emcore Corporation

20100040101 - Optical semiconductor device: An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100040100 - Semiconductor laser: A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal... Agent: Fujitsu Patent Center C/o Cpa Global

20100040102 - Optoelectronic devices: Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer... Agent: Knobbe Martens Olson & Bear LLP

20100040103 - Semiconductor device: t

20100040104 - Vertical cavity surface emitting laser: The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer... Agent: Rader Fishman & Grauer PLLC

20100040105 - High repetition-rate, all laser diode-pumped extreme ultraviolet/soft x-ray laser and pump system: An extreme ultraviolet/soft x-ray laser driven by a compact solid-state chirped pulse amplification laser system entirely pumped by laser diodes is described. The solid-state pump laser generates compressed pulses of sub-10 ps duration with energy greater than 1 J at a chosen repetition rate in a cryogenically cooled Yb:YAG system.... Agent: Cochran Freund & Young LLC

20100034221 - Narrow linewidth injection seeded q-switched fiber ring laser based on a low-sbs fiber: A narrow linewidth injection-seeded Q-switched fiber ring laser based on a low-SBS optical fiber. High peak powers are achieved through the use of a single-clad erbium doped fiber with an acoustic waveguide. 12.5 μJ per pulse (250 ns pulse width) is achieved before a weakened form of stimulated Brillouin scattering... Agent: Carmen Patti Law Group , LLC

20100034222 - Laser source for lidar application: The invention relates to a source comprising a self-adaptive main laser cavity comprising at least one main amplifying medium in a main direction and several mirrors making it possible to create a gain hologram within said main amplifying medium by interference of a first optical wave in the main direction... Agent: Lowe Hauptman Ham & Berner, LLP

20100034223 - Light-emitting device having injection-lockable semiconductor ring laser monolithically integrated with master laser: A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use... Agent: Mr. Edward J. Timmer Timmer & Associates

20100034224 - Tunable laser module, tunable laser apparatus and controlling method for tunable laser: A tunable laser module includes a tunable laser section including a gain medium and a wavelength filter having a periodic characteristic which brings about a discontinuous variation of an oscillation wavelength, and a monitoring section adapted to output a monitoring signal which periodically varies in response to the oscillation wavelength... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100034225 - Projection display apparatus: In a projection display apparatus in which a laser beam source and an optical engine are connected together through an optical fiber, safety is improved against temperature rise in the optical fiber and its periphery. A projection display apparatus includes a temperature sensor 4 provided on the end portion, of... Agent: Birch Stewart Kolasch & Birch

20100034226 - Laser driver circuit, method for controlling a laser driver circuit, and use: A laser driver circuit comprising an amplifier device with a plurality of switchable subamplifiers, which can be or are connected to an output for connection of a laser, ith an analog switching device for switching of analog input signals, a plurality of analog inputs for the analog input signals, a... Agent: Muncy, Geissler, Olds & Lowe, PLLC

20100034227 - Infrared imaging using multiple wavelengths: For an infrared imaging catheter, means of achieving a spread of wavelengths or multiple wavelengths through a stacking arrangement of “monochromatic” laser diodes or LED's are disclosed. Since a stack of diodes or LED's have different temperatures, they produce a wavelength spread many times greater than a single laser diode... Agent: Scully Scott Murphy & Presser, PC

20100034228 - Light emitting and lasing semiconductor devices and methods: A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects;... Agent: Martin Novack

20100034229 - Semiconductor laser and method of making semiconductor laser: A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active layer disposed on a third area, and a second... Agent: Smith, Gambrell & Russell

20100034230 - Arsenic doped semiconductor light emitting device and its manufacture: A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the... Agent: Frishauf, Holtz, Goodman & Chick, PC

20100034231 - Semiconductor laser: A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is emitted, and formed of a single-layer or a multilayer dielectric film. Hydrogen concentration distribution in... Agent: Sughrue Mion, PLLC

20100034232 - Electrically pumped nd3+ doped solid laser: A laser amplification structure comprising an active medium and at least two electrodes disposed on either side of the active medium, the active medium comprising a first layer of a silicon oxide doped with rare earth ions, wherein the first silicon layer is co-doped with silicon nanograins and rare earth... Agent: Ip Group Of Dla Piper LLP (us)

20100034233 - Surface-emission type semiconductor laser: l

20100034234 - Semiconductor laser device and manufacturing method thereof: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser... Agent: Mots Law, PLLC

20100027569 - Uv diode-laser module with optical fiber delivery: A diode-laser module includes a diode-laser delivering radiation having a wavelength less than 450 nm and located a housing. Focusing optics focus the radiation into a single-mode optical fiber located in the housing. The radiation is focused through an end-cap bonded to the single-mode fiber and having a diameter greater... Agent: Coherent, Inc. C/o Morrison & Forester

20100027570 - Fiber laser based production of laser drilled microvias for multi-layer drilling, dicing, trimming or milling applications: Fiber lasers and methods for constructing and using fiber lasers for micro-/nano-machining with output beams including stacked pulses and combinations of continuous wave, pseudo-continuous wave and pulse sequence components.... Agent: Davis & Bujold, P.l.l.c.

20100027571 - Stabilized near-infrared laser: A traveling wave ring-resonator is configured to deliver CW single-longitudinal-mode radiation having a fundamental wavelength characteristic of an optically pumped gain-element in the resonator. The delivered fundamental-wavelength radiation is the output-radiation of the resonator. An optically nonlinear crystal is located in the resonator and arranged to convert a fraction of... Agent: Coherent, Inc. C/o Morrison & Forester

20100027572 - Unstable disk resonator: A configuration for an unstable, negative branch imaging resonator (NBIR) is disclosed in which coupling mirrors are added so that the Primary and Secondary mirrors are not in direct optical communication with the imaging systems which minimizes the occurrence of the NBIR experiencing magnification runaway and/or odd order aberrations by... Agent: Moore And Van Allen PLLC For Boeing

20100027573 - Method of driving a laser diode: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is... Agent: Sonnenschein Nath & Rosenthal LLP

20100027574 - Optical information recording device, optical pickup, and method for emitting laser light: An optical information recording device includes a semiconductor laser for emitting laser light, a light irradiation section for collecting the laser light and irradiating an optical information recording medium with the laser light, and a laser controller for supplying the semiconductor laser with a laser drive current wave in pulse... Agent: Wolf Greenfield & Sacks, P.C.

20100027575 - Semiconductor laser device: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe... Agent: Mcdermott Will & Emery LLP

20100027576 - Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array: A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high... Agent: Fitzpatrick Cella Harper & Scinto

20100027577 - Stackable optoelectronics chip-to-chip interconnects and method of manufacturing: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The... Agent: Banpil Photonics, Inc.

20100027578 - Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and... Agent: Fitzpatrick Cella Harper & Scinto

20100027579 - Linewidth-narrowed excimer laser cavity: An excimer laser cavity is disclosed which includes at least one grating-prism (grism) and a wavelength-selective diffraction grating arranged in sequence. The grism grating surface faces the gain medium and produces an expanded beam which is diffracted on the same side of the prism grating surface normal as the incident... Agent: Rissman Hendricks & Oliverio, LLP