SEARCH:      Monitor Keywords |  Custom RSS

Coherent light generators January recently filed with US Patent Office 01/10

20100020832 - Wavelength selectable laser systems and related methods: Laser systems and related methods are provided. In this regard, a representative laser system includes: a laser diode array that generates light; a first crystal having a cavity; an optical element operative to focus the generated light onto the first crystal such that the light generates a high-power circulating beam... Agent: U S Army Research Laboratory Attn: Rdrl-loc-i

20100020833 - Intra-cavity non-degenerate laguerre mode generator: A lasing method including the steps of providing a laser resonator; utilizing birefringence compensation in said resonator whereby said resonator is induced to operate in a Laguerre-Gaussian higher order mode; and utilizing polarized outcoupling of lasing energy at said higher order mode from said resonator. In the illustrative application, the... Agent: John E. Gunther Regional Patent Engineer

20100020834 - Quadratic nonlinearity-based high-energy pulse compressor for generating few-cycle pulses: A pulse compressor for compressing many-cycle femtosecond-duration high-energy pulses to near-single-cycle durations uses a single quadratic nonlinear crystal. A pulsed laser beam is controlled and its passage is aligned through the quadratic nonlinear crystal such that the detrimental effects of group-velocity mismatch are avoided, while still allowing enough nonlinear phase... Agent: Jones, Tullar & Cooper, P.C.

20100020835 - Surface emitting laser: A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator... Agent: Mr. Jackson Chen

20100020836 - Use of current channeling in multiple node laser systems and methods thereof: Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices injected current into both the nodal and antinodal regions... Agent: U S Army Research Laboratory Attn: Rdrl-loc-i

20100020838 - Laser diode, optical disk device and optical pickup: A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end... Agent: Sonnenschein Nath & Rosenthal LLP

20100020837 - Semiconductor light emission device having an improved current confinement structure, and method for confining current in a semiconductor light emission device: A semiconductor light emission device is provided that has a current confinement region that comprises a diffusion accommodation layer located adjacent the active region. The diffusion accommodation layer comprises a material that has a higher bandgap than the bandgap of the material in the active region. Diffusion of dopants into... Agent: Kathy Manke Avago Technologies Limited

20100020839 - Optical device package and optical semiconductor device using the same: An optical device package comprises: a metal frame including a substrate and a rectangular die pad portion integrally connected to the substrate, wherein the substrate is a metal plate, and the die pad portion is bent from the substrate such that the die pad portion extends from the substrate at... Agent: Leydig Voit & Mayer, Ltd

20100020840 - Optical semiconductor device: An optical semiconductor device includes a semiconductor laser, a first optical waveguide, an optical coupler for branching light guided from the semiconductor laser through the first optical waveguide into two lights, two second optical waveguides, diffraction gratings provided individually on the two second optical waveguides, and an optical detector for... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20100020841 - Laser light source: The invention relates to a laser light source for generating narrow-band laser radiation with high coherence, comprising a laser diode (1), which forms an internal resonator (4), and an external resonator (7) coupled to the internal resonator (4). The object of the invention is to improve a laser source of... Agent: Collard & Roe, P.C.

20100014543 - Laser and a method for operating the laser: A laser comprising: a resonator cavity defined by at least two reflectors, wherein the at least two reflectors are highly reflective at a plurality of fundamental wavelengths; a laser medium disposed in the resonator cavity capable of generating plurality of fundamental wavelengths; an optical pump source for energizing the laser... Agent: Knobbe Martens Olson & Bear LLP

20100014545 - Athermal external cavity laser: Provided is an athermal external cavity laser (ECL), whose output optical power and output wavelength can be kept regular irrespective of temperature changes without using additional temperature controlling components. The ECL comprises: a semiconductor amplifier; an optical fiber comprising a core in which a Bragg grating is formed and a... Agent: Blakely Sokoloff Taylor & Zafman LLP

20100014544 - Narrow spectrum light source: An apparatus and method are disclosed for decreasing the spectral bandwidth of a semiconductor laser, such as a vertical cavity surface emitting laser.... Agent: Demont & Breyer, LLC

20100014546 - Optical pulse generating apparatus using photoelectric effect of surface plasmon resonance photons and its manufacturing method: In an optical pulse generating apparatus including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light as an optical pulse signal, a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, and a dielectric layer exciting... Agent: Frishauf, Holtz, Goodman & Chick, PC

20100014547 - Device for longitudinal pumping of a laser medium: The invention concerns a device for longitudinal pumping of an amplifying laser medium comprising at least one laser diode capable of emitting at least one laser beam, means for focusing said laser beam onto said amplifying laser medium and means for collimating said laser beam capable of generating a collimated... Agent: Harness, Dickey & Pierce, P.L.C

20100014548 - Surface emitting laser: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure... Agent: Fitzpatrick Cella Harper & Scinto

20100014549 - Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength: A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20100014550 - Nitride semiconductor laser device: A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective... Agent: Mcdermott Will & Emery LLP

20100014551 - Vertical cavity surface emitting laser: A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on... Agent: Smith, Gambrell & Russell

20100014552 - Gas laser oscillator: A gas laser oscillator including a plurality of discharge tube arrays, each including a plurality of electrical discharge tubes aligning in an axial direction thereof; a support mechanism supporting the discharge tube arrays with axes thereof extending in directions parallel to each other; and an optical part optically connecting the... Agent: Benjamin J. Hauptman Suite 300

20100008386 - Broadband fiber laser: A broadband fiber laser provides a lasing cavity including a reflective minor and at least one fiber Bragg grating for further providing a lasing signal to resonate and be amplified therein. Alternatively, the wavelength of the fiber laser can be either fixed or tunable by varying the central wavelength of... Agent: Rosenberg, Klein & Lee

20100008387 - Wavelength conversion apparatus, laser light generating apparatus and wavelength conversion method: A wavelength conversion apparatus capable of keeping high wavelength conversion efficiency for a longer time than ever before is provided. A wavelength conversion apparatus includes: a wavelength conversion section including a nonlinear optical crystal, and performing wavelength conversion of incident laser light by allowing the incident laser light to pass... Agent: Sonnenschein Nath & Rosenthal LLP

20100008388 - Internal resonator type shg light source: An internal resonator type SHG light source includes a pump light source which emits a pump light; a solid-state laser which absorbs the pump light and which emits a fundamental wave; an output mirror provided so as to face the solid-state laser, which forms a resonator together with the solid-state... Agent: Wenderoth, Lind & Ponack L.L.P.

20100008389 - Inverted composite slab sandwich laser gain medium: The present invention pertains to a composite slab laser gain medium with an undoped core and at least one doped gain medium section disposed on at least one side of that core. The gain medium is constructed so as to mitigate the effects of thermal and mechanical stresses within it... Agent: Birch Stewart Kolasch & Birch

20100008390 - Light-emitting device having injection-lockable unidirectional semiconductor ring laser monolithically integrated with master laser: A unidirectional semiconductor ring laser (USRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to... Agent: Timmer & Associates Mr. Edward J. Timmer

20100008391 - Nitride based semiconductor device and fabrication method for the same: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on... Agent: Rabin & Berdo, PC

20100008392 - Semiconductor optical device: An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconductor substrate has a higher band gap than that of the... Agent: Smith, Gambrell & Russell

20100008393 - Group iii nitride semiconductor light-emitting device and epitaxial wafer: The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking layer; and an active layer. The gallium nitride based semiconductor region of n-type has a primary surface, and the primary surface extends on a predetermined... Agent: Venable LLP

20100002730 - Fiber laser system: A powerful fiber laser system is configured with at least one large-area multi-clad rare-earth doped fiber, which is configured with a MM core capable of propagating a single mode laser emission at a first wavelength, and with at least one pumping assembly capable of generating an optical pump output at... Agent: Ipg Photonics Corporation

20100002731 - Laser light source device and laser irradiation apparatus using the same: A laser light source device includes a pump light source which emits transverse-multimode light; a plurality of resonator mirrors which define a resonator, at least part of the resonator mirrors outputting light to the outside, where the output light having plural wavelengths; a laser medium arranged in the resonator, the... Agent: Robert J. Depke Lewis T. Steadman

20100002732 - Pumped laser system using feedback to pump means: A laser system according to the invention comprises pump generating means (x02, x03) for generating at least a first and a second, preferably focused, pump beam, and lasing means (x06, x07) for emitting radiation by being appropriately pumped. The lasing means (x06, x07) is disposed in a first resonator so... Agent: Richard Jaworski C/o Cooper & Dunham

20100002733 - Q-switched all-fiber laser: A Q-switched all-fiber laser utilizes a long period fibre grating (LPFG) modulator. The LPFG modulator is characterized by optical spectral characteristics that are controlled by application of stress via an actuator. In particular, the actuator applies stress to selected sections of the LPFG in order to modulate a light signal... Agent: Anderson Gorecki & Manaras LLP

20100002734 - Continuous wavelength tunable laser source with optimum positioning of pivot axis for grating: A laser source (10) for generating a continuously wavelength tunable light (12) includes a gain media (16), an optical output coupler (36F), a cavity collimator (38A), a diffraction grating (30), a grating beam (54), and a beam attacher (56). The gain media (16) generates the light (12), and the gain... Agent: Roeder & Broder LLP

20100002735 - Laser source device, wavelength conversion element, method of manufacturing wavelength conversion element, projector, and monitoring device: A laser source device includes: a light emission unit which emits laser beam having first wavelength; a first mirror which selectively reflects S-polarized light contained in the first wavelength laser beam emitted from the light emission unit in a direction different from the direction toward the light emission unit and... Agent: Workman Nydegger 1000 Eagle Gate Tower

20100002736 - Wavelength normalization in phase section of semiconductor lasers: Particular embodiments of the present invention relate generally to semiconductor lasers and laser projections systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser having a gain section, a phase section and a wavelength selective section is configured for optical... Agent: Corning Incorporated

20100002737 - Electronically controlled optical scanning: A device for generating light pulses that are separated in terms of time has a light source that emits a sequence of light pulses. A regulation signal is formed within a regulation circuit from a cycle signal and the light pulse sequence of the light sources via a phase detector.... Agent: Collard & Roe, P.C.

20100002738 - Nitride-based semiconductor light-emitting device: A nitride-based semiconductor light-emitting device includes a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate, wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the... Agent: Harness, Dickey & Pierce, P.L.C

20100002739 - Lens coupled quantum cascade laser: Terahertz quantum cascade (QC) devices are disclosed that can operate, e.g., in a range of about 1 THz to about 10 THz. In some embodiments, QC lasers are disclosed in which an optical element (e.g., a lens) is coupled to an output facet of the laser's active region to enhance... Agent: Nutter Mcclennen & Fish LLP

20100002740 - Articulated glaze cladding for laser components and method of encapsulation: A glaze encapsulated solid-state laser component. The novel laser component includes a core and a cladding of ceramic glaze disposed on a surface of the core. In an illustrative embodiment, the core is fabricated from a laser gain medium and the cladding material is a multi-oxide eutectic ceramic glaze having... Agent: Raytheon Company (eo/eo4/n119)

20100002741 - Vertical surface light emitting device with multiple active layers: A vertical cavity surface light emitting device (VCSLED) with multiple active layers includes at least one optical resonance unit comprising a highly-doped conduction region (1), an insulating layer (2), a negative electrode (3), confinement layers (4, 6), an active layer (5), and a positive electrode (7). The optical resonance units... Agent: Andrew F. Bodendorf

20100002742 - Rotary disk module: There is provided a rotary disk module to efficiently transfer heat from a rotatable disk to a stationary heat sink. The rotatable disk is in proximity of the heat sink with a small gap that allows the disk to move, and which is filled with a cooling medium. The cooling... Agent: Santanu Basu

20100002743 - Laser focusing through turbulent medium: Methods and systems for performing target-in-the-loop, real-time laser beam phase aberration compensation through a turbulent atmosphere are disclosed. The methods and systems can distinguish between phase aberration contributions from atmospheric turbulence-induced phase aberration and target-induced phase aberration caused by target surface roughness. Selected components of incoming light can be used... Agent: Haynes And Boone, LLPIPSection