|Coherent light generators patents - Monitor Patents|
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Coherent light generators October categorized by USPTO classification 10/09Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 10/30/2009 > patent applications in patent subcategories. categorized by USPTO classification
10/23/2009 > patent applications in patent subcategories. categorized by USPTO classification
10/15/2009 > patent applications in patent subcategories. categorized by USPTO classification
20090257460 - External resonator variable wavelength laser and its packaging method: The reflectance of a semiconductor optical amplifier (1) on the side where an external cavity is formed is 0.1% at most. The finesse value obtained by dividing the period of the transmission characteristic of the wavelength selection filter (3) by the half value width of the transmission characteristic is 4... Agent: Young & Thompson
20090257461 - Process and apparatus for a wavelength tuning source: An apparatus and source arrangement for filtering an electromagnetic radiation can be provided which may include at least one spectral separating arrangement configured to physically separate one or more components of the electromagnetic radiation based on a frequency of the electromagnetic radiation. The apparatus and source arrangement may also have... Agent: Dorsey & Whitney LLP Intellectual Property Department
20090257462 - Laser device, laser display device, and laser irradiation device: The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection... Agent: Rader Fishman & Grauer PLLC
20090257463 - Laser light source, image display apparatus, and processing apparatus: A laser light source includes a fundamental laser generator that generates a fundamental laser light, a wavelength conversion element that is made of a ferroelectric crystal with a periodically poled structure and converts the fundamental laser light to a laser light having a different wavelength, a holding member that holds... Agent: Wenderoth, Lind & Ponack L.L.P.
20090257464 - Control system and apparatus for use with ultra-fast laser: A control system and apparatus for use with an ultra-fast laser is provided. In another aspect of the present invention, the apparatus includes a laser, pulse shaper, detection device and control system. A multiphoton intrapulse interference method is used to characterize the spectral phase of laser pulses and to compensate... Agent: Harness, Dickey & Pierce, P.L.C
20090257465 - Portable laser device: A hand-held laser device includes a casing formed with a substantially hollow interior space and having a laser emitter thereinside. The laser emitter is formed with an exciting lamp and a laser rod. A source generating a stream of gaseous coolant is provided within the interior space. A fluid cooling... Agent: Lawrence G. Fridman, Esq. Silber & Fridman. Esqs.
20090257466 - Optoelectronic semiconductor component and method for the production of an optoelectronic semiconductor device: In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component contains at least one facet on the optically active area. Furthermore, the semiconductor... Agent: Slater & Matsil, L.L.P.
20090257467 - Group iii nitride semiconductor device and method for manufacturing group iii nitride semiconductor device: A laser diode 300 includes a p-type GaN guide layer 107, a current confinement layer 314 provided on the p-type GaN guide layer 107 and having an opening 314A formed therein, and a p-type cladding layer 108 provided on the current confinement layer 314 and plugging the opening 314A formed... Agent: Foley And Lardner LLP Suite 500
20090257468 - Communication devices that include a coherent light source configured to project light through a translucent portion of a housing and methods of operating the same: A communication device includes communication circuitry, a coherent light source, and a housing that at least partially surrounds the communication circuitry and the coherent light source. The housing includes a translucent portion and the coherent light source is configured so as to project light through the translucent portion of the... Agent: Myers Bigel Sibley & Sajovec, P.A.10/08/2009 > patent applications in patent subcategories. categorized by USPTO classification
20090252183 - An optical device for addressing a slave cavity with a wide-band laser source: The invention concerns an optical device comprising an optical source for emitting a light beam in a plurality of emitting wavelengths and at least one laser, each of said at least one laser including a holographic medium (MH), means for injecting (FO, MCS, MUX, CO, IO, AV) said light beam... Agent: Harness, Dickey & Pierce, P.L.C
20090252185 - Laser light source device, illumination device, image display device, and monitor device: A laser light source device includes: a light source; an external resonator; a wavelength conversion element converting the wavelength of part of incident light having the first wavelength into the second wavelength which is different from the first wavelength; and an optical-path conversion element causing the light that has been... Agent: Oliff & Berridge, PLC
20090252184 - Laser oscillator and laser processing apparatus: A laser oscillator of a laser processing apparatus includes a pair of terminating mirrors, between which a straight light path lies, and also includes a ¼ wavelength plate, an active medium, a higher harmonic wave separating/outputting mirror, a condensing lens, and a nonlinear optical crystal (wavelength converting crystal) that are... Agent: Wenderoth, Lind & Ponack, L.L.P.
20090252186 - Coherent light display system: A display system includes a coherent light source that can emit a coherent light beam, an optical component that can direct the coherent light beam to a spatial light modulator, a transport mechanism that can move the optical component to produce a movement in the coherent light beam, and a... Agent: Fish & Richardson P.C.
20090252187 - Minimizing power variations in laser sources: The present invention relates generally to semiconductor lasers and laser projection systems. According to one embodiment of the present invention, a projected laser image is generated utilizing an output beam of the semiconductor laser. A gain current control signal is generated by a laser feedback loop to control the gain... Agent: Corning Incorporated
20090252188 - Misalignment prevention in an external cavity laser having temperature stabilisation of the resonator and the gain medium: The present invention relates to an external-cavity laser module comprising a thermoelectric cooler (TEC) including an upper carrier plate having an upper surface, said TEC being configured to stabilise the temperature of the upper surface at a substantially constant temperature. The laser module further comprises a laser assembly mounted on... Agent: Volpe And Koenig, P.C.
20090252189 - Semiconductor laser apparatus and optical apparatus: A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode... Agent: Mcdermott Will & Emery LLP
20090252190 - Semiconductor optical device and method of fabricating the same: In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is... Agent: Smith, Gambrell & Russell
20090252191 - Semiconductor laser device: A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the... Agent: Rabin & Berdo, PC
20090252192 - Reduced feedback optical transmitter: A device including a laser with reduced feedback.... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.10/01/2009 > patent applications in patent subcategories. categorized by USPTO classification
20090245294 - Fibre laser with intra-cavity frequency doubling: The invention disclosed herein relates to fibre lasers with intra-cavity frequency doubling. In one embodiment, the invention is directed to a fibre laser with intra-cavity frequency doubling characterized in that a non-linear crystal of type II phase matching is used to thereby enable operation of the fibre laser without selection... Agent: Thomas Loop
20090245295 - Resonator cavity configuration and method: A resonator cavity (10A) and method are provided. The resonator cavity (10A) includes at least one gain medium (16) and end reflectors (12, 14) which define together longitudinal modes of light in the cavity, and further includes an intra-cavity beam coupler assembly (20). The beam coupler assembly (20) is configured... Agent: The Nath Law Group
20090245296 - Tunable optical resonator: An optical apparatus includes a substrate comprising a layer of thermally insulating material disposed thereon; an optical resonator disposed on the layer of thermally insulating material; and a trench in the thermally insulating material disposed around at least a portion of the optical resonator. The optical resonator is substantially thermally... Agent: Hewlett Packard Company
20090245297 - Wavelength-agile laser transmitter using optical parametric oscillator: A wavelength-agile laser transmitter apparatus and method are provided. The apparatus comprises a pump laser that is configured to output a pump beam at a first (pump) wavelength and an optical parametric oscillator. The optical parametric oscillator comprises a cavity that contains several optical components including a non-linear optical medium,... Agent: Edell, Shapiro & Finnan, Llc
20090245298 - Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in... Agent: Gates & Cooper LLP Howard Hughes Center
20090245299 - Capacitive comb feedback for high speed scan mirror: An image projection system (100) has a laser (102, 104, 106) providing at least one beam (103, 105, 107) to a scan mirror apparatus (130) for scanning the at least one beam (103, 105, 107) in two orthogonal directions (404, 406). The scan mirror (130) includes an oscillating portion (204,... Agent: Ingrassia Fisher & Lorenz, P.c. (mot)
20090245301 - Laser micromachining using programmable pulse shapes: Laser pulse shaping techniques produce tailored laser pulse spectral output. The laser pulses can be programmed to have desired pulse widths and pulse shapes (such as sub-nanosecond to 10 ns-20 ns pulse widths with 1 ns to several nanoseconds leading edge rise times). Preferred embodiments are implemented with one or... Agent: Electro Scientific Industries/stoel Rives, LLP
20090245302 - Methods and systems for dynamically generating tailored laser pulses: Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that... Agent: Electro Scientific Industries/stoel Rives, LLP
20090245300 - Systems and methods for laser pulse equalization: Systems and methods provide laser pulse equalization at different pulse repetition frequencies (PRFs). After initially pumping a lasing medium from a first pumping level to a peak pumping level, a controller may cause a pump source to continue pumping the lasing medium according to a pulse equalization pumping curve. The... Agent: Electro Scientific Industries/stoel Rives, LLP
20090245303 - Laser light source device: A laser light source device is disclosed, which reduces the coherence of the laser light and inexpensively achieves a visually recognizable level of speckle reduction without use of a mechanical driving means. The laser light source device includes: laser modules, each including a laser light source, an intensity modulation unit... Agent: Sughrue Mion, Pllc
20090245306 - High performance tunable lasers utilizing optical phase-locked loops: This invention relates to opto-electronic systems using semiconductor lasers driven by optical phase-locked loops that control the laser's optical phase and frequency. Feedback control provides a means for precise control of optical frequency and phase, including the ability for broadband electronic tunability of optical signals and the cascading of multiple... Agent: George Rakuljic Telaris Inc.
20090245305 - Laser system with segmented diode laser: Disclosed is a laser system comprising: A laser assembly (101) comprising a plurality of emitters; first and second light feedback devices (208, 232) forming respective external cavities with the laser assembly; a dispersive device (205) for redirecting respective portions of the light from the laser assembly to the first and... Agent: Darby & Darby P.c.
20090245307 - Laser forming apparatus and method for manufacturing head suspension with the apparatus: In a laser forming apparatus, a first optical system and a second optical system are provided symmetrically with respect to a vertical plane to a center line of a head suspension targeted for spring pressure adjustment. A half mirror branches laser light emitted from one laser oscillator into two to... Agent: Westerman, Hattori, Daniels & Adrian, LLP
20090245304 - Multi-pass optical power amplifier: Anisotropic crystals such as Nd:YVO4, Nd:YLF, and Nd:GdVO4 have become preferred gain materials for many laser applications. The anisotropic gain medium without ancillary compensation ensures there is no degradation of laser modes when passing through the gain medium. An optical power amplifier that incorporates an anisotropic gain medium achieves power... Agent: Electro Scientific Industries/stoel Rives, LLP
20090245308 - Active solid heatsink device and fabricating method thereof: An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high heat-generating density diffuses to a whole substrate using a heat conduction characteristic of hot electrons of a thermionic (TI)... Agent: Workman Nydegger 1000 Eagle Gate Tower
20090245309 - Dispersion compensating varactor circuit: Improved dispersion compensating circuits for optical transmission systems are disclosed. According to the improved method, there is provided a compensation circuit comprising a varactor diode network. The network is preferably inserted between a source of laser modulating signal and the laser. A low-pass filter or all pass filter constructs the... Agent: Motorola, Inc. Law Department
20090245310 - Nitride-based semiconductor laser device and method of manufacturing the same: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side... Agent: Ditthavong Mori & Steiner, P.c.
20090245311 - Process for producing nitride semiconductor laser, and nitride semiconductor laser: Provided are a process for producing a nitride semiconductor laser that is a process applied to materials wherein a diffusion of an impurity is not easily attained, such as nitride semiconductor material, and substituted for any process including the step of local diffusion of an impurity, which has been hitherto... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.
20090245312 - Surface emitting laser element array: Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a... Agent: Amin, Turocy & Calvin, LLP 1900 E. 9th Street
20090245313 - Multi-beam semiconductor laser: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting... Agent: Sonnenschein Nath & Rosenthal LLP
20090245314 - Light-emitting device and manufacturing method of the same: A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.
20090245315 - Laser diode assemblies: Laser diodes (120) emit laser beams along a vertical YZ plane at different distances from the YZ plane. The beams are collimated in their fast and slow axes, and are redirected by turning mirrors (162) to form a beam stack (130C) traveling along the XZ plane. The beam stack is... Agent: Haynes And Boone, LLP Ip Section
20090245316 - Multi-wavelength hybrid silicon laser array: A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within... Agent: Pearl Cohen Zedek Latzer, LLP
20090245317 - Laser with highly efficient gain medium: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate... Agent: Electro Scientific Industries/stoel Rives, LLP
20090245318 - Quickly replaceable processing-laser modules and subassemblies: Pre-aligned, kinematically mounted modules including processing lasers, beam trains, and individually calibrated control beams are quickly and easily replaced on subassembly bases with minimal in situ alignment, and can maintain working-spot position to micron tolerances over ambient temperature variations of ±10° C. Subassembly bases, with features for kinematically mating to... Agent: Elizabeth Anne NevisPrevious industry: Multiplex communications
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