Coherent light generators inventions 10/09

20090245294 - Fibre laser with intra-cavity frequency doubling: The invention disclosed herein relates to fibre lasers with intra-cavity frequency doubling. In one embodiment, the invention is directed to a fibre laser with intra-cavity frequency doubling characterized in that a non-linear crystal of type II phase matching is used to thereby enable operation of the fibre laser without selection... Agent: Thomas Loop

20090245295 - Resonator cavity configuration and method: A resonator cavity (10A) and method are provided. The resonator cavity (10A) includes at least one gain medium (16) and end reflectors (12, 14) which define together longitudinal modes of light in the cavity, and further includes an intra-cavity beam coupler assembly (20). The beam coupler assembly (20) is configured... Agent: The Nath Law Group

20090245296 - Tunable optical resonator: An optical apparatus includes a substrate comprising a layer of thermally insulating material disposed thereon; an optical resonator disposed on the layer of thermally insulating material; and a trench in the thermally insulating material disposed around at least a portion of the optical resonator. The optical resonator is substantially thermally... Agent: Hewlett Packard Company

20090245297 - Wavelength-agile laser transmitter using optical parametric oscillator: A wavelength-agile laser transmitter apparatus and method are provided. The apparatus comprises a pump laser that is configured to output a pump beam at a first (pump) wavelength and an optical parametric oscillator. The optical parametric oscillator comprises a cavity that contains several optical components including a non-linear optical medium,... Agent: Edell, Shapiro & Finnan, Llc

20090245298 - Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in... Agent: Gates & Cooper LLP Howard Hughes Center

20090245299 - Capacitive comb feedback for high speed scan mirror: An image projection system (100) has a laser (102, 104, 106) providing at least one beam (103, 105, 107) to a scan mirror apparatus (130) for scanning the at least one beam (103, 105, 107) in two orthogonal directions (404, 406). The scan mirror (130) includes an oscillating portion (204,... Agent: Ingrassia Fisher & Lorenz, P.c. (mot)

20090245301 - Laser micromachining using programmable pulse shapes: Laser pulse shaping techniques produce tailored laser pulse spectral output. The laser pulses can be programmed to have desired pulse widths and pulse shapes (such as sub-nanosecond to 10 ns-20 ns pulse widths with 1 ns to several nanoseconds leading edge rise times). Preferred embodiments are implemented with one or... Agent: Electro Scientific Industries/stoel Rives, LLP

20090245302 - Methods and systems for dynamically generating tailored laser pulses: Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that... Agent: Electro Scientific Industries/stoel Rives, LLP

20090245300 - Systems and methods for laser pulse equalization: Systems and methods provide laser pulse equalization at different pulse repetition frequencies (PRFs). After initially pumping a lasing medium from a first pumping level to a peak pumping level, a controller may cause a pump source to continue pumping the lasing medium according to a pulse equalization pumping curve. The... Agent: Electro Scientific Industries/stoel Rives, LLP

20090245303 - Laser light source device: A laser light source device is disclosed, which reduces the coherence of the laser light and inexpensively achieves a visually recognizable level of speckle reduction without use of a mechanical driving means. The laser light source device includes: laser modules, each including a laser light source, an intensity modulation unit... Agent: Sughrue Mion, Pllc

20090245306 - High performance tunable lasers utilizing optical phase-locked loops: This invention relates to opto-electronic systems using semiconductor lasers driven by optical phase-locked loops that control the laser's optical phase and frequency. Feedback control provides a means for precise control of optical frequency and phase, including the ability for broadband electronic tunability of optical signals and the cascading of multiple... Agent: George Rakuljic Telaris Inc.

20090245305 - Laser system with segmented diode laser: Disclosed is a laser system comprising: A laser assembly (101) comprising a plurality of emitters; first and second light feedback devices (208, 232) forming respective external cavities with the laser assembly; a dispersive device (205) for redirecting respective portions of the light from the laser assembly to the first and... Agent: Darby & Darby P.c.

20090245307 - Laser forming apparatus and method for manufacturing head suspension with the apparatus: In a laser forming apparatus, a first optical system and a second optical system are provided symmetrically with respect to a vertical plane to a center line of a head suspension targeted for spring pressure adjustment. A half mirror branches laser light emitted from one laser oscillator into two to... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090245304 - Multi-pass optical power amplifier: Anisotropic crystals such as Nd:YVO4, Nd:YLF, and Nd:GdVO4 have become preferred gain materials for many laser applications. The anisotropic gain medium without ancillary compensation ensures there is no degradation of laser modes when passing through the gain medium. An optical power amplifier that incorporates an anisotropic gain medium achieves power... Agent: Electro Scientific Industries/stoel Rives, LLP

20090245308 - Active solid heatsink device and fabricating method thereof: An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high heat-generating density diffuses to a whole substrate using a heat conduction characteristic of hot electrons of a thermionic (TI)... Agent: Workman Nydegger 1000 Eagle Gate Tower

20090245309 - Dispersion compensating varactor circuit: Improved dispersion compensating circuits for optical transmission systems are disclosed. According to the improved method, there is provided a compensation circuit comprising a varactor diode network. The network is preferably inserted between a source of laser modulating signal and the laser. A low-pass filter or all pass filter constructs the... Agent: Motorola, Inc. Law Department

20090245310 - Nitride-based semiconductor laser device and method of manufacturing the same: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side... Agent: Ditthavong Mori & Steiner, P.c.

20090245311 - Process for producing nitride semiconductor laser, and nitride semiconductor laser: Provided are a process for producing a nitride semiconductor laser that is a process applied to materials wherein a diffusion of an impurity is not easily attained, such as nitride semiconductor material, and substituted for any process including the step of local diffusion of an impurity, which has been hitherto... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20090245312 - Surface emitting laser element array: Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a... Agent: Amin, Turocy & Calvin, LLP 1900 E. 9th Street

20090245313 - Multi-beam semiconductor laser: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting... Agent: Sonnenschein Nath & Rosenthal LLP

20090245314 - Light-emitting device and manufacturing method of the same: A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20090245315 - Laser diode assemblies: Laser diodes (120) emit laser beams along a vertical YZ plane at different distances from the YZ plane. The beams are collimated in their fast and slow axes, and are redirected by turning mirrors (162) to form a beam stack (130C) traveling along the XZ plane. The beam stack is... Agent: Haynes And Boone, LLP Ip Section

20090245316 - Multi-wavelength hybrid silicon laser array: A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within... Agent: Pearl Cohen Zedek Latzer, LLP

20090245317 - Laser with highly efficient gain medium: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate... Agent: Electro Scientific Industries/stoel Rives, LLP

20090245318 - Quickly replaceable processing-laser modules and subassemblies: Pre-aligned, kinematically mounted modules including processing lasers, beam trains, and individually calibrated control beams are quickly and easily replaced on subassembly bases with minimal in situ alignment, and can maintain working-spot position to micron tolerances over ambient temperature variations of ±10° C. Subassembly bases, with features for kinematically mating to... Agent: Elizabeth Anne Nevis