SEARCH:      Monitor Keywords |  Custom RSS

Coherent light generators August inventions list 08/09

20090213877 - Fiber laser: A fiber laser for the production of self-similar pulses contains a pumped source and a linear resonator. The linear resonator has two reflectors. The laser further includes a polarization-maintaining fiber doped with an amplifying medium with a normal dispersion β2>0 in the frequency range prescribed by the amplifying medium and... Agent: Barnes & Thornburg LLP

20090213878 - Broad-area microlasers and methods for driving them: A multi-mode microlaser and a method for driving a multi-mode broad-area microlaser such as a multi-mode VCSEL is described such that the multi-mode microlaser shows an unexpected Gaussian-like far-field intensity distribution. The driving conditions are in general determined such that a strong reduction of the degree of spatial coherence occurs.... Agent: Bacon & Thomas, Pllc

20090213879 - Automated laser tuning: In exemplary embodiments, an ultra short pulse system comprises a laser platform which includes an optical source configured to generate an optical pulse, an optical amplifier configured to amplify the optical pulse, and a compressor configured to temporally compress the amplified optical pulse. The ultra short pulse system further comprises... Agent: Carr & Ferrell LLP

20090213880 - Pulse laser apparatus, terahertz measuring apparatus, and terahertz tomographic apparatus: A pulse laser apparatus includes a laser configured to generate a pulse of a laser beam, a fiber amplifier, and a pulse compressor. The fiber amplifier includes a rare-earth doped fiber that exhibits normal dispersion at a wavelength of the laser beam generated from the laser. The pulse laser apparatus... Agent: Fitzpatrick Cella Harper & Scinto

20090213881 - Vertically emitting, optically pumped semiconductor comprising an external resonator and frequency doubling on a separate substrate: An optically pumped semiconductor apparatus having a surface-emitting semiconductor body (1) which has a radiation passage area (1a) which faces away from a mounting plane of the semiconductor body (1), and an optical element (7) which is suitable for directing pump radiation (17) onto the radiation passage area (1a) of... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090213882 - Laser source that generates a plurality of alternative wavelength output beams: A laser source (10) for emitting a set of sequential, different wavelength output beams (12) includes a gain medium (16), a feedback assembly (26) and a control system (30). The gain medium (16) includes a first facet (16A), and the gain medium (16) generates a beam (12A) that exits the... Agent: Roeder & Broder LLP

20090213883 - Laser-induced structuring of substrate surfaces: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate... Agent: Nutter Mcclennen & Fish LLP

20090213884 - Integrated photonic semiconductor devices and methods for making integrated photonic semiconductor devices: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device... Agent: Kathy Manke Avago Technologies Limited

20090213885 - Diffusion-cooled co2 laser with flexible housing: A gas includes a housing having a symmetrical arrangement of upper and lower cooling members for removing heat generated in a gas-discharge excited by an electrode assembly. The electrode assembly is clamped between the cooling members and is itself essentially symmetrically arranged. The cooling members and the electrode assembly are... Agent: Coherent, Inc. C/o Morrison & Forester

20090213886 - Control method of distributed bragg reflection semiconductor laser, and image projecting apparatus: A DBR semiconductor laser is controlled in an image projecting apparatus, which includes the DBR laser having a phase and DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR laser into second harmonic wave light, an optical deflector for scanning the second harmonic wave... Agent: Fitzpatrick Cella Harper & Scinto

20090213887 - Semiconductor laser and method of manuracture: The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterised in that the slot is substantially filled with a reflective material having a... Agent: Brooks, Cameron & Huebsch , Pllc

20090213888 - Semiconductor laser device and manufacturing method therefor: A semiconductor laser device includes a semiconductor laser, a dangling bond terminating film a cleaved surface of the semiconductor laser and composed of a lithium film or a beryllium film, and a coating film on the dangling bond terminating film.... Agent: Leydig Voit & Mayer, Ltd

20090213889 - Surface emitting laser and image forming apparatus: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and... Agent: Fitzpatrick Cella Harper & Scinto

20090213890 - Quantum cascade laser: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an... Agent: Cislo & Thomas LLP

20090213891 - Semiconductor laser: A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The sum of the optical film... Agent: Leydig Voit & Mayer, Ltd

20090213893 - End pumping vertical external cavity surface emitting laser: A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed... Agent: Cantor Colburn, LLP

20090213892 - Vcsel with reduced light scattering within optical cavity: A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type... Agent: Smith, Gambrell & Russell

20090213894 - Portable laser head: A portable laser head has a single-piece holder configured with a plurality of spaced-apart nests. The nests are arranged to receive at least a non-linear frequency converter, a V-shaped beam splitter and a dump collimator. Alternatively, the holder has multiple nests configured to receive an input collimator and output focusing... Agent: Ipg Photonics Corporation

20090207867 - Surface-emitting fiber laser: In one aspect, the disclosure features an article, including a fiber waveguide extending along a waveguide axis, the fiber waveguide including a core extending along the waveguide axis and a confinement region surrounding the core. The confinement region is configured to guide radiation at a first wavelength, λ1, along the... Agent: Fish & Richardson PC

20090207868 - Multiple-wavelength tunable laser: A tunable laser includes dispersion optics for separating generated laser pulses into first and second wavelength pulses directed along first and second optical paths. First and second reflective mirrors are disposed in the first and second optical paths, respectively. The laser's output mirror is partially reflective and partially transmissive with... Agent: National Aeronautics And Space Administration Langley Research Center

20090207869 - Laser plasmonic system: The present invention can selectively control surface plasmon-mediated two-photon-induced luminescence in a dendritic silver nanoparticle system over distances of up to 100 m. This control is achievable by changing the polarization of the incident beam and by controlling the phase across the spectrum of a femtosecond laser pulse used for... Agent: Harness, Dickey & Pierce, P.L.C

20090207870 - Laser diode module with an adjustable monitoring current: A laser diode module with an adjustable monitoring current, wherein the photo diodes monitoring the light-emitting power of the laser diode are arranged in array, and wherein a programmed photo diode is formed by the photo diodes in match of a memory and switch control unit. In this way, the... Agent: Rosenberg, Klein & Lee

20090207871 - Laser oscillator apparatus and power supply apparatus therefor, and control method therefor: A laser output power command determination value from a controller (17) is input to an upper limit current determination unit (32), and an upper limit current value to be decided based on the laser output power command determination value is determined. Then, a second comparator (30) compares a command current... Agent: Sughrue Mion, PLLC

20090207872 - Nitride semiconductor light emitting device and method of manufacturing the same: The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a... Agent: Miles & Stockbridge PC

20090207873 - Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent leds: A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation... Agent: Cooley Godward Kronish LLP Attn: Patent Group

20090207874 - Multiwavelength laser system and method for ophtalmological applications: A multiwavelength laser system for opthalmological applications. The system including a first semiconductor diode laser including a first working beam of a first wavelength; and at least one second semiconductor diode laser having a second working beam of a second wavelength. The second wavelength being different from the first wavelength.... Agent: Darby & Darby P.C.

20090207875 - Light chip and optical module: The light chip 100 according to the present invention is a light chip having a semiconductor laser formed on a first substrate and includes a cavity 18 having an emission surface 22 on the upper surface, a first electrode 24 and a second electrode 26 for driving the semiconductor laser,... Agent: Oliff & Berridge, PLC

20090207876 - Laser source for the infrared wavelength range: The present invention relates to a laser source for the infrared wavelength range which comprises a pump laser (1) which emits radiation (PP) which is input radiation to a first optical parametric oscillator (3, 4, 5), whose output radiation (SP) is input radiation to a second step in the form... Agent: Jacobson Holman PLLC

20090201952 - Method and apparatus for producing uv laser from all-solid-state system: An all-solid-state laser system produces coherent DUV radiation through a third or fourth harmonic generation. The fundamental wavelength is generated by a slave laser optically pumped by one or more light source(s) of high density array(s) and is stabilized by injecting optical seeds whose wavelength is rapidly swept to cover... Agent: Sheng-bai Zhu

20090201954 - Method and apparatus for pulsed harmonic ultraviolet lasers: An apparatus for producing coherent, pulsed ultraviolet light with pulse durations that range between 1 ps and 1 μs includes one or more source lasers in the visible or near-infrared frequency range. The apparatus also includes one or more FC stages, at least one of the one or more FC... Agent: Townsend And Townsend And Crew, LLP

20090201953 - Microstructured optical fibers and manufacturing methods thereof: Optical devices and a method for manufacturing these devices. One optical device includes a core region having a first medium of a first refractive index n1, and includes a cladding region exterior to the core region. The cladding region includes a second medium having a second refractive index n2 higher... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090201955 - Illumination apparatus and method for controlling energy of a laser source: The disclosure relates to an illuminating apparatus for illuminating a sample on a work stage, optionally with a relatively narrow illuminating line of relatively controlled energy, as well as methods for controlling energy of a laser source when illuminating a sample on a work stage with a relatively narrow illuminating... Agent: Fish & Richardson PC

20090201956 - Light source driving apparatus and light source driving method: A light source driving apparatus, which adjusts a bias current to be supplied so as to control intensity of a light source, comprises a power source which outputs a variable reference voltage; a light receiving unit which receives light output from the light source and converts the light into an... Agent: Fujitsu Patent Center C/o Cpa Global

20090201957 - Laser: A pulsed laser is disclosed comprising an active lasing medium (1), an output coupler (5) and a rear cavity mirror (6). The rear cavity mirror (6) is attached to a mount (21) via an intermediate attachment (15). Heating elements are embedded within the attachment (15). The attachment (15) is heated... Agent: Paul S Madan Madan & Sriram, PC

20090201958 - Lateral optically pumped surface-emitting semiconductor laser on a heat sink: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090201959 - Wavelength and intensity monitoring of optical cavity: According to various illustrative embodiments, a device, method, and system for measuring optical fine structure of lateral modes of an optical cavity are described. In one aspect, the device comprises at least one photodetector arranged to detect an output of the optical cavity in a lateral direction thereof. The device... Agent: Chowdhury & Georgakis, P.c

20090201960 - Three-dimensional photonic crystal light emitting device: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type... Agent: Fitzpatrick Cella Harper & Scinto

20090201961 - Semiconductor laser element and method of fabrication thereof: An AlGaAs-based ridge-stripe semiconductor laser element that has a stacked structure. The stacked structure includes a multi layer upper cladding layer, a multi layer lower cladding layer, and an active layer in-between the upper cladding layer and the lower cladding layers. The layers within each of the upper cladding layer... Agent: Sonnenschein Nath & Rosenthal LLP

20090201962 - Semiconductor laser device: A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front... Agent: Mcdermott Will & Emery LLP

20090201963 - Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system: Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type... Agent: Fildes & Outland, P.C.

20090201964 - Semiconductor laser optical integrated semiconductor device: A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and... Agent: Smith, Gambrell & Russell

20090201965 - Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to... Agent: Fildes & Outland, P.C.

20090201966 - Process for a mission of pulsed laser radiation and associated laser source: The present invention especially concerns the field of lasers. Specifically, the object of the invention is a process for the emission of pulsed laser radiation generated by at least one laser crystal which is located in a cavity containing a first and a second mirror and pumped by des pumping... Agent: Oliff & Berridge, PLC

20090201967 - Laser device comprising a diffraction grating and coupled laser resonators: The present invention provides a laser device wherein one diffraction grating and at least two reflectors are arranged such that two coupled resonators are formed for the light path. This laser device is an arrangement forming a first optical resonator comprising a first and a second reflector including in its... Agent: Greer, Burns & Crain

20090201952 - Method and apparatus for producing uv laser from all-solid-state system: An all-solid-state laser system produces coherent DUV radiation through a third or fourth harmonic generation. The fundamental wavelength is generated by a slave laser optically pumped by one or more light source(s) of high density array(s) and is stabilized by injecting optical seeds whose wavelength is rapidly swept to cover... Agent: Sheng-bai Zhu

20090201954 - Method and apparatus for pulsed harmonic ultraviolet lasers: An apparatus for producing coherent, pulsed ultraviolet light with pulse durations that range between 1 ps and 1 μs includes one or more source lasers in the visible or near-infrared frequency range. The apparatus also includes one or more FC stages, at least one of the one or more FC... Agent: Townsend And Townsend And Crew, LLP

20090201953 - Microstructured optical fibers and manufacturing methods thereof: Optical devices and a method for manufacturing these devices. One optical device includes a core region having a first medium of a first refractive index n1, and includes a cladding region exterior to the core region. The cladding region includes a second medium having a second refractive index n2 higher... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090201955 - Illumination apparatus and method for controlling energy of a laser source: The disclosure relates to an illuminating apparatus for illuminating a sample on a work stage, optionally with a relatively narrow illuminating line of relatively controlled energy, as well as methods for controlling energy of a laser source when illuminating a sample on a work stage with a relatively narrow illuminating... Agent: Fish & Richardson PC

20090201956 - Light source driving apparatus and light source driving method: A light source driving apparatus, which adjusts a bias current to be supplied so as to control intensity of a light source, comprises a power source which outputs a variable reference voltage; a light receiving unit which receives light output from the light source and converts the light into an... Agent: Fujitsu Patent Center C/o Cpa Global

20090201957 - Laser: A pulsed laser is disclosed comprising an active lasing medium (1), an output coupler (5) and a rear cavity mirror (6). The rear cavity mirror (6) is attached to a mount (21) via an intermediate attachment (15). Heating elements are embedded within the attachment (15). The attachment (15) is heated... Agent: Paul S Madan Madan & Sriram, PC

20090201958 - Lateral optically pumped surface-emitting semiconductor laser on a heat sink: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090201959 - Wavelength and intensity monitoring of optical cavity: According to various illustrative embodiments, a device, method, and system for measuring optical fine structure of lateral modes of an optical cavity are described. In one aspect, the device comprises at least one photodetector arranged to detect an output of the optical cavity in a lateral direction thereof. The device... Agent: Chowdhury & Georgakis, P.c

20090201960 - Three-dimensional photonic crystal light emitting device: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type... Agent: Fitzpatrick Cella Harper & Scinto

20090201961 - Semiconductor laser element and method of fabrication thereof: An AlGaAs-based ridge-stripe semiconductor laser element that has a stacked structure. The stacked structure includes a multi layer upper cladding layer, a multi layer lower cladding layer, and an active layer in-between the upper cladding layer and the lower cladding layers. The layers within each of the upper cladding layer... Agent: Sonnenschein Nath & Rosenthal LLP

20090201962 - Semiconductor laser device: A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front... Agent: Mcdermott Will & Emery LLP

20090201963 - Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system: Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type... Agent: Fildes & Outland, P.C.

20090201964 - Semiconductor laser optical integrated semiconductor device: A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and... Agent: Smith, Gambrell & Russell

20090201965 - Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to... Agent: Fildes & Outland, P.C.

20090201966 - Process for a mission of pulsed laser radiation and associated laser source: The present invention especially concerns the field of lasers. Specifically, the object of the invention is a process for the emission of pulsed laser radiation generated by at least one laser crystal which is located in a cavity containing a first and a second mirror and pumped by des pumping... Agent: Oliff & Berridge, PLC

20090201967 - Laser device comprising a diffraction grating and coupled laser resonators: The present invention provides a laser device wherein one diffraction grating and at least two reflectors are arranged such that two coupled resonators are formed for the light path. This laser device is an arrangement forming a first optical resonator comprising a first and a second reflector including in its... Agent: Greer, Burns & Crain

20090196314 - Method and system for a semiconductor laser light source: A laser module includes a Distributed Bragg Reflector semiconductor laser light source that is operable to generate a light beam having a stabilized frequency and spatial mode. A periodically poled, nonlinear optical device is operable to receive the light beam, and frequency-convert the light beam.... Agent: Texas Instruments Incorporated

20090196315 - Pulsed laser oscillator with variable pulse duration: The present invention relates to the field of pulsed laser oscillators. It relates to a pulsed laser oscillator (15) for emitting a laser pulse, including a laser cavity (15), said laser cavity including a laser medium (4) able to be pumped by pump radiation emitted by at least one pump... Agent: Arent Fox LLP

20090196316 - Laser arrangement having a laser diode apparatus and method for stabilizing operating temperature distribution of a laser diode apparatus: A laser arrangement has at least one laser diode apparatus with a side surface which laterally limits the laser diode apparatus. The laser arrangement has a plurality of active regions arranged laterally side by side and configured to generate radiation. The laser diode apparatus is arranged on a mount. The... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090196317 - Light emitting device: It is enabled to provide that a light emitting device have an electron blocking layer (106) positioned between tunnel junctions (107, 108) and an active layer (104). The electron blocking layer (106) has an energy of conduction band edge higher than that of the active layer (605), and is composed... Agent: Young & Thompson

20090196318 - Method of manufacturing vertical cavity surface emitting laser and method of manufacturing laser array, vertical cavity surface emitting laser and laser array, and image forming apparatus with laser array: A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a bottom reflecting mirror, an active layer, a selective oxidation layer and a top reflecting mirror, followed by forming a dielectric film... Agent: Fitzpatrick Cella Harper & Scinto

20090196319 - Vertical cavity surface emitting laser: A vertical cavity surface emitting laser is provided which controls the reflectivity at the middle portion and the peripheral portion of the mirror with a simple structure to cause oscillation of a single lateral mode by use of a mirror having the refractive index changing periodically in the mirror plane... Agent: Fitzpatrick Cella Harper & Scinto

20090196320 - Wavelength converter apparatus: v