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Coherent light generators July category listing 07/09

20090190615 - High power pulsed fiber laser: A high power fiber laser includes a pump source optically coupled to a first fiber laser, which is in turn optically coupled to a second fiber laser. The pump source is adapted to generate light, which is received by the first fiber laser and used to generate a first pulsed... Agent: Connolly Bove Lodge & Hutz, LLP

20090190616 - laser device: A laser device includes an outcoupling mirror, a laser medium, a phase-conjugate mirror based on stimulated Brillouin scattering, and an end mirror all arranged along an optical axis of the laser device. A controllable modulator is positioned between the phase-conjugate mirror and the end mirror. The outcoupling mirror and the... Agent: Oliff & Berridge, PLC

20090190617 - Laser light intensity control device, laser light intensity control method, and image forming apparatus: A disclosed laser light intensity control device includes a semiconductor laser configured to scan a photoconductor by emitting laser beams and form an electrostatic latent image, a temperature detection circuit configured to detect a temperature of the semiconductor laser, a light intensity detection circuit configured to detect a light intensity... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090190618 - System and methods for speckle reduction: A method of operating a laser source comprising is provided. The method reduces speckle contrast in a projected image by creating a plurality of statistically independent speckle patterns. The method comprises generating a plurality of sub-beams that define an optical mode. The method further comprises controlling the phase of selected... Agent: Corning Incorporated

20090190619 - Semiconductor laser package: The present invention provides a semiconductor laser package including a heat sink, a laser bar with a plurality of lasers on the heat sink, an insulated layer arranged between said heat sink and said laser bar, a solder layer combining said insulated layer with said laser bar, and a clearance... Agent: Morris Manning Martin LLP

20090190620 - Optical disk device and method of controlling light emitting element: An optical disk device includes: a light emitting element which applies light to an optical disk; a light detection unit which receives the light emitted from the light emitting element and outputs an intensity signal corresponding to an intensity of the light emitting element; a difference detection unit which generates... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20090190621 - Laser turn-on accelerator independent of bias control loop bandwidth: An accelerator circuit is incorporated in a laser diode system for accelerating the turn-on operation of the laser diode independent of the control loop bandwidth of the laser diode system. The accelerator circuit provides a boost current to a compensation capacitor upon laser turn-on which compensation capacitor operates to establish... Agent: Patent Law Group LLP

20090190622 - Semiconductor laser: A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator having opposed end surfaces. A ridge includes part of the upper cladding layer. The upper cladding layer in the ridge, proximate... Agent: Leydig Voit & Mayer, Ltd

20090190623 - External-cavity optically-pumped semiconductor-laser with a resonator stop: An optically pumped semiconductor-laser (OPS-laser) resonator includes an arrangement for delivering optical pump radiation on an OPS-chip to cause fundamental radiation to circulate in the resonator. The resonator includes second and third-harmonic generating crystals and is arranged deliver third-harmonic radiation. The resonator also includes a stop positioned and configured to... Agent: Coherent, Inc. C/o Morrison & Forester

20090190624 - Optical packages and methods for aligning optical packages: An optical package includes a semiconductor laser, a wavelength conversion device and a MEMS-actuated mirror oriented on a base module to form a folded optical pathway between an output of the semiconductor laser and an input of the wavelength conversion device. An optical assembly is located in a mechanical positioning... Agent: Corning Incorporated

20090185583 - Uv and visible laser systems: A laser system comprising: a light source generating light, said light source comprising at least two laser sources of different wavelengths; and a frequency converter operatively coupled to said light source to accept the light provided by said light source and to convert it to higher optical frequency such that... Agent: Corning Incorporated

20090185584 - Laser oscillator: The present invention provides a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. The laser oscillator has a first layer including a concave portion, a second layer formed over the first layer to cover the concave portion, and... Agent: Eric Robinson

20090185585 - Mode-matching system for tunable external cavity laser: An external cavity laser includes a lasing cavity and an optically coupled feedback cavity having differently spaced resonant lasing and feedback mode frequencies. The lasing modes can be collectively or individually matched to selected feedback modes. For example, a current driving the lasing cavity can be adjusted to shift individual... Agent: Corning Incorporated

20090185586 - Wavelength tuning apparatus and method thereof: A wavelength tuning apparatus and method that maintain highest efficiency with a single angle manipulation without changing a position of input/output light. For this, the wavelength tuning apparatus and method include a transmission-type diffraction grating and a mirror that are constructed in one-body type so that a light path that... Agent: Rabin & Berdo, PC

20090185587 - Laser generator and method of controlling the same: A laser generator includes a generation means for pumping by a pumping light source (7) a pumping medium (3) to generate a fundamental-wave laser beam, an output sensor (6) for measuring average output power or pulse energy of the fundamental-wave laser beam, a wavelength-conversion element (5), arranged on an optical... Agent: Sughrue Mion, PLLC

20090185588 - Method and apparatus for producing arbitrary pulsetrains from a harmonic fiber laser: A system for producing frequency converted light includes a first seed laser operable to provide a first laser signal and a second seed laser operable to provide a second laser signal. The system also includes an optical combiner optically coupled to the first seed laser and the second seed laser.... Agent: Townsend And Townsend And Crew, LLP

20090185589 - Semiconductor light-emitting device: A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090185590 - Digital piston error control for high-power laser system employing diffractive optical element beam combiner: A high-power laser system includes a laser master oscillator, a plurality of fiber laser amplifiers producing intermediate output beamlets, a diffractive optical element for combining the intermediate beamlets into a combined output beam, and a piston error controller for minimizing errors related to beam combination that may degrade the quality... Agent: Carmen Patti Group , LLC

20090185591 - Semiconductor device: In a semiconductor device where a semiconductor element having an asymmetric temperature distribution during an operation is mounted, inner leads on the right and left ends have asymmetric lengths, so that the right and left regions of a semiconductor element mounting part have different sizes. The semiconductor element is mounted... Agent: Steptoe & Johnson LLP

20090185592 - Laser diode system with reduced coolant consumption: High-power laser diode system offering reduced consumption and inventory of coolant. The invention provides coolant at a very high flow rate to a heat exchanger. A portion of the coolant flow downstream of the heat exchanger is separated and pumped by a fluid-dynamic pump back into the heat exchanger. The... Agent: Aqwest LLC

20090185593 - Method of manufacturing laser diode packages and arrays: A laser diode package according to the present invention is composed of CTE mismatched components soldered together. The laser diode package includes a laser diode bar, at least one heat sink, and at least one exothermic layer. Solder layers are adjacent the heat sink(s) and laser diode bar, respectively. The... Agent: Daniel J. Burnham Nixon Peabody, LLP.

20090185594 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser... Agent: Ditthavong Mori & Steiner, P.C.

20090185595 - Semiconductor laser: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second... Agent: Leydig Voit & Mayer, Ltd

20090180498 - Coherent beam combiner based on parametric conversion: Methods and systems are provided to form a single coherent beam of light from a plurality of smaller beams of light. In one implementation a beam combiner comprising a beam director is configured to direct a seed beam of coherent light and a plurality of pump beams of coherent light;... Agent: Fitch Even Tabin & Flannery

20090180499 - Frequency changing device: t

20090180500 - Method and device for controlling optical output of laser diode: A method of controlling an optical output of a laser diode includes applying a bipolar current pulse to the laser diode, thereby substantially suppressing the emission tail of the optical output of the laser diode. A device for generating sub-nanosecond intense optical pulses includes a driver unit operative to generate... Agent: Ipg Photonics Corporation

20090180502 - Injection locking type light source which of the noise can be minimized: An injection seed of an injection locking type light source includes a broadband light source, a seed circulator receiving and transmitting a light from the light source to a seed optical filter passing only a desired wavelength band among the light beams from the light source and passing through the... Agent: Oliff & Berridge, PLC

20090180501 - Laser tuning: A method of controlling a laser is provided for generating an optical output. The method includes the step of making a change to an electrical input to the laser so as to move the optical output of the laser towards a target frequency, and also includes the step of changing... Agent: Sughrue Mion, PLLC

20090180503 - Laser oscillator: A laser oscillator is obtained in which the flatness of an optical element that makes contact with a cooling flange is maintained in a highly precise state, by suppressing a flange presser and a base from profile-deforming the cooling flange. The flange presser and the cooling flange make contact with... Agent: Buchanan, Ingersoll & Rooney PC

20090180504 - Semiconductor laser device: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a... Agent: Mcdermott Will & Emery LLP

20090180505 - Nitride semiconductor laser device and method of manufacturing the same: A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer... Agent: Rabin & Berdo, PC

20090180507 - Nitride semiconductor laser chip, nitride semiconductor laser device, and manufacturing method of nitride semiconductor laser chip: Provided are a nitride semiconductor laser chip with a reliability improved by relieving stress due to strain within the nitride semiconductor laser chip, a manufacturing method thereof, and a nitride semiconductor laser device. The nitride semiconductor laser chip comprises: a substrate; and a laminated structure provided on a main surface... Agent: Mots Law, PLLC

20090180506 - Vertical cavity surface emitting laser: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor... Agent: Rader Fishman & Grauer PLLC

20090180508 - Two-wavelength semiconductor laser device and its fabricating method: A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed... Agent: Mcdermott Will & Emery LLP

20090180509 - Surface emitting semiconductor laser and method of manufacturing the same: A surface emitting semiconductor laser comprises a semiconductor substrate; a lamination structure including a lower multilayer film reflecting mirror, an active layer, and an upper multilayer film reflecting mirror formed on the semiconductor substrate; and an upper electrode and a lower electrode for supplying an electric power to the active... Agent: Kubotera & Associates, LLC

20090180510 - Guiding a beam from an unstable laser resonator: A gas laser includes an unstable laser resonator disposed in a laser housing, and a beam guide configured to guide a laser beam decoupled from the laser resonator out of the laser housing. The laser beam is coupled into the beam guide, and the beam guide is an optical fiber... Agent: Fish & Richardson PC

20090180511 - Waveguide retroreflector and method of fabricating the same: A waveguide retroreflector consists of an end cap with curved output surface attached to a waveguide such as optical fiber. The radius of curvature of the output surface of the end cap matches the length of the end cap so as to retro-reflect a substantial portion of radiation exiting the... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20090175301 - Fibre laser system: A fibre laser system is disclosed comprising an optical fibre, a part of which is doped with a rare earth to form an optical gain medium; at least one laser diode; means for applying pump radiation from the laser diode to the optical gain medium and for generating a laser... Agent: Gauthier & Connors, LLP

20090175303 - Light source mode alignment device and method, passive optical network system: A light source mode alignment device and method and a passive optical network system are provided. The device includes a laser and a temperature control unit connected to each other and further includes a signal processing unit. The laser converts an incident light into a current signal. The current signal... Agent: Brinks Hofer Gilson & Lione

20090175302 - Method and apparatus for reducing optical signal speckle: An optical signal generator is configured with an associated control system and driver configured to reduce speckle. Speckle reduction occurs by pulsing the drive signal between a first current level and a second current level. These pulses force the optical signal generator to introduce oscillations into the optical signal. The... Agent: Weide & Miller - Mindspeed

20090175305 - Nitride semiconductor laser device: A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type... Agent: Rabin & Berdo, PC

20090175304 - Two-dimensional photonic crystal surface emitting laser light source: A two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes 242A and an active layer provided on one side of the two-dimensional photonic crystal. The hole 242A... Agent: Oliff & Berridge, PLC

20090175306 - High-power red semiconductor laser: Provided is a high-power red semiconductor laser having a laser element in which a temperature rise is suppressed with improved heat dissipation characteristics thereof, and which accordingly needs not be enlarged in heat dissipation area. An n-AlGaInP cladding layer, an AlGaInP optical guide layer, an MQW active layer, an AlGaInP... Agent: Rabin & Berdo, PC

20090175307 - Optical connection device and method of fabricating the same: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and... Agent: Harness, Dickey & Pierce, P.L.C

20090175308 - Integrated pod optical bench design: In an integrated gimbal and High-Powered Multiband Laser (HPMBL) for use in an infrared countermeasure apparatus in a pod mounted on an aircraft, the improvement comprises an optical bench that connects the optical path between side-by-side mounted gimbal and high power laser; and a kinematic mounting system that prevents optical... Agent: Bae Systems

20090168815 - High-power fiber optic pulsed laser device: The invention relates to a high-power fiberoptic laser device comprising at least one laser diode (1) capable of transmitting a pump wave, a triggered optical resonator (22) consisting of a first double-sheathed optical fiber (6), an optical amplifier consisting of a second double-sheathed optical fiber (10), first (33) and second... Agent: Young & Thompson

20090168814 - Second harmonic generation laser system: A method of manufacturing a second harmonic laser system is provided. A seed laser is optically coupled to a first port of a polarizing beam splitter using a polarization maintaining fiber. A first end of a non-polarization maintaining doped optical fiber is optically coupled to a second port of the... Agent: Slater & Matsil, L.L.P.

20090168816 - Structured submount for tuner assembly with optional phase adjust: A structured sub-mount assembly is disclosed to support a hybrid assembly of tunable filters. The sub-mount assembly is constructed to provide a high thermal resistance path and high mechanical resonance frequency. Optionally, the structured sub-mount assembly includes a temperature-controlled phase adjust component disposed approximately midway between the two tunable filters.... Agent: Carrie A. Boone, P.C.

20090168817 - Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device: A testing method of a wavelength-tunable laser having a resonator including wavelength selection portions having wavelength property different from each other includes a first step of controlling the wavelength-tunable laser so as to oscillate at a given wavelength according to an initial setting value, a second step of tuning the... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090168818 - Systems and methods for polarization modulation of an optical signal: According to one embodiment of the present invention, a method of operating a laser source is provided. The laser source comprises a laser configured to generate an optical signal, and a polarization split and delay unit that is coupled to the optical signal. The polarization split and delay unit is... Agent: Corning Incorporated

20090168820 - Mitigated temperature gradient-distributed bragg reflector: A semiconductor laser system comprising a gain region, a gain contact coupled to the gain region, and a distributed Bragg reflector (DBR) having a near side and a far side with respect to the gain region are provided. The DBR reflects a resonant frequency of light back into the gain... Agent: Slater & Matsil, L.L.P.

20090168821 - Thermal shunt for active devices on silicon-on-insulator wafers: An optimized structure for heat dissipation is provided that may include two types of thermal shunts. The first type of thermal shunt employed involves using p and n metal contact layers to conduct heat away from the active region and into the silicon substrate. The second type of thermal shunt... Agent: Intel Corporation C/o Cpa Global

20090168819 - Vertical-cavity surface-emitting laser diode device: A vertical-cavity surface-emitting laser diode (VCSEL) device, including a laser element portion formed on a substrate, the laser element portion comprising a multi-layer reflective mirror of a first conductivity type, an active layer, and a multi-layer reflective mirror of a second conductivity type, and a light absorbing heat converting region... Agent: Fildes & Outland, P.C.

20090168822 - Laser control apparatus and electronic device using the same: A laser control apparatus includes a detector and a switch module. The detector is for detecting states of a mechanism having a closed state in which the mechanism blocks a laser and an opened state in which the mechanism unblocks the laser. The switch module is for transmitting an emitting... Agent: PCe Industry, Inc. Att. Steven Reiss

20090168823 - Semiconductor laser device, optical pickup device and optical information recording/reproducing apparatus: A semiconductor laser device according to the present invention includes: at least one laser chip that emits a laser beam; a plurality of lead pins that are electrically connected to the laser chip and that supply current to get the laser beam emitted; and a stem that holds the laser... Agent: Mark D. Saralino (pan) Renner, Otto, Boisselle & Sklar, LLP

20090168825 - Light-emitting element assembly and method for manufacturing the same: A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated... Agent: Sonnenschein Nath & Rosenthal LLP

20090168824 - Semiconductor laser light emitting device and method for manufacturing same: A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4... Agent: Hamre, Schumann, Mueller & Larson, P.C.

20090168826 - Semiconductor lasers utilizing optimized n-side and p-side junctions: A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side... Agent: Patent Law Office Of David G. Beck

20090168827 - Nitride semiconductor laser chip and method of fabricating same: A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN... Agent: Harness, Dickey & Pierce, P.L.C

20090168828 - Vertical-cavity, surface-emission type laser diode and fabrication process thereof: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower... Agent: Cooper & Dunham, LLP

20090168829 - Vertical-cavity surface-emitting laser: A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090168830 - Optical transmission assembly: An optical transmission assembly consists of an upper cladding; a lower cladding; a specified width core formed between the upper cladding and the lower cladding; a surface light emitting device mounted on an upper surface of the upper cladding, a light emitting surface of the surface light emitting device facing... Agent: Mcginn Intellectual Property Law Group, PLLC