Coherent light generators inventions 06/09

20090161700 - Fiber laser: A fiber laser includes: a solid laser fiber doped with a rare earth element; a first grating fiber provided at one end portion of both ends along an optical axis direction of the solid laser fiber; and a first reflective element provided at the other end portion of the solid... Agent: Greenblum & Bernstein, P.L.C

20090161699 - Laser emitting material, method for making the same and use thereof: A solid-state laser emitting material for use in conjunction with a light source includes a polymer matrix functioning as host materials, containing laser dye of rhodamine 590 or rhodamine 610 as gain materials and nano-submicron particles as scatters therein. The lowest lasing threshold of the laser emitting material is approximately... Agent: Jacobson Holman PLLC

20090161701 - Laser light source device and image display apparatus: There has been a problem that pumping light leaks from a part having a coating at the joint of a double-clad fiber added with a rare earth and a general single-mode fiber, and heat is generated partly from the fiber by this energy thus causing deterioration of the fiber. Deterioration... Agent: Wenderoth, Lind & Ponack L.L.P.

20090161702 - Optically pumped disk-type solid state laser oscillator and optically pumped disk-type solid state laser system: An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light... Agent: Wenderoth, Lind & Ponack, L.L.P.

20090161704 - Intracavity upconversion laser: The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure (4) arranged between a first mirror (5) and a second mirror (6), said first (5) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an... Agent: Philips Intellectual Property & Standards

20090161703 - Sum-frequency-mixing pr:ylf laser apparatus with deep-uv output: A method for generating ultraviolet radiation includes sum-frequency mixing in one optically nonlinear crystal fundamental-wavelength radiation generated by a Pr:YLF gain-element with radiation having a second-harmonic wavelength of fundamental-wavelength radiation generated by a Pr:YLF gain-element. The second-harmonic wavelength is generated in another optically nonlinear crystal. The fundamental-wavelength radiation being mixed... Agent: Stallman & Pollock LLP

20090161705 - Laser projection utilizing beam misalignment: A laser projection system is provided comprising a laser source, projection optics, scanning optics, and a scanning controller. The laser source comprises at least two punctual sources P1, P2 configured to generate two optical beams. The scanning controller is configured to drive the scanning optics to define a fast scanning... Agent: Corning Incorporated

20090161706 - Optical level control device, method for controlling same, and laser application device: The optical level control device independently controls the intensities of two beams having different wavelengths that are emitted from a laser oscillator, and the optical level control device comprises a wavelength-dependent wavelength plate and a polarization beam splitter. The wavelength-dependent wavelength plate functions as a half-wave plate with respect to... Agent: Sughrue Mion, PLLC

20090161707 - Method and apparatus for laser diode compensation: The luminance of a laser diode is a function of laser diode drive current. The luminance is also a function of other factors, such as age and temperature. A laser projection device includes laser diodes to generate light in response to a commanded luminance, and also includes photodiodes to provide... Agent: Microvision, Inc.

20090161708 - Optical communication light source unit and wavelength monitoring control method: In the present invention, the extremely complicated setting and control and an extremely expensive optical component (wavelength locker) are not required, and optical output wavelength and optical output power can simply be set and controlled at a moderate price. At least one value for determining a dependence of the optical... Agent: Hogan & Hartson L.L.P.

20090161709 - Multichip package, methods of manufacture thereof and articles comprising the same: Disclosed herein is a multichip package comprising an optoelectronics assembly; a socket that houses the optoelectronics assembly; the socket being in electrical communication with the optoelectronics assembly; a plate having a first surface and a second surface; the first surface being opposedly disposed to the second surface; a portion of... Agent: Cantor Colburn LLP-ibm Poughkeepsie

20090161710 - Laser array circuit: A laser array circuit decreases the size of a circuit pattern. A laser-diode (LD) driving switching element with a low on resistance is used in common with and switches conduction and non-conduction of a large current to each of a plurality of charge capacitors and charge switching elements that accumulate... Agent: Posz Law Group, PLC

20090161711 - Nitride semiconductor laser diode: A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Alx1Iny1Ga1-x1-y1N (x1≧0.5, y1≧0 and 1−x1−y1≦0.5) in a group III nitride semiconductor multilayer structure having a major growth surface defined by a nonpolar plane. A cavity direction of the laser diode is perpendicular to a... Agent: Rabin & Berdo, PC

20090161712 - Semiconductor device, method of manufacturing the same, and production equipment of the same: A cap 25 having a piece of glass 26 formed at a laser irradiating position and covering a laser irradiating direction and an upper face of a package 24, is mounted onto the package 24 having lateral faces of a frame body 30 formed in three directions other than the... Agent: Steptoe & Johnson LLP

20090161715 - Laser device: The laser device has a gain medium, first and second clads sandwiching the gain medium in the thickness direction, and a cavity structure for resonating the electromagnetic wave generated in the gain medium. The gain medium includes a plurality of active regions for generating an electromagnetic wave and at lease... Agent: Fitzpatrick Cella Harper & Scinto

20090161716 - Laser diode: A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface... Agent: Rader Fishman & Grauer PLLC

20090161714 - Optimizing vcsel mirrors for improving temperature response: Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over... Agent: Workman Nydegger 1000 Eagle Gate Tower

20090161713 - Surface emitting optical devices: A visible wavelength vertical cavity surface emitting laser suitable for single mode operation has an oxide aperture (81, 82) for concentrating electrical current within a central axial portion (143) of the device and a surface relief feature (144, 146) at an output surface of the device selecting for substantially single... Agent: Fish & Richardson P.C.

20090161717 - Bragg reflector grating: A Bragg reflector grating comprises a plurality of chirped grating sections (65-72), in which at least a first chirped grating section and a second chirped grating section have differing ranges of grating pitches. The combined range of grating pitches provided by the first and second chirped grating sections includes at... Agent: Lahive & Cockfield, LLP Floor 30, Suite 3000

20090161718 - Two-beam semiconductor laser device: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam... Agent: Mcdermott Will & Emery LLP

20090154503 - All-fiber mode selection technique for multicore fiber laser devices: An optical device that includes 1) a gain section having a plurality of core regions including dopant species configured to absorb incident radiation at a first wavelength and emit radiation at a second wavelength, and 2) at least one passive section attached to the gain section. The gain section and... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090154504 - Laser processing apparatus, laser processing method, and method for making settings for laser processing apparatus: It is an object to enable easily adjusting a focus position for coping with thermal lens effects. There is provided a laser-light scanning portion including a Z-axis scanner capable of adjusting the focus position of laser light in the direction of the optical axis, an X-axis scanner and a Y-axis... Agent: Kilyk & Bowersox, P.l.l.c.

20090154506 - Tunable laser module: The objective of the present invention is to provide with is to provide with a tunable laser module capable of adequately detecting the decay of the large variation in the wavelength of the light and then operating the shutter. The tunable laser module 1 comprises a tunable laser source 11˜13... Agent: Nixon & Vanderhye, PC

20090154505 - Wavelength tunable laser diode using double coupled ring resonator: A wavelength tunable laser diode using a double coupled ring resonator is provided. A new double coupled ring resonator structure is formed by a connection of two ring resonators having different radii so that stable laser oscillation occurs only in a resonant wavelength at which the two ring resonators are... Agent: Rabin & Berdo, PC

20090154509 - Laser processing apparatus, method for making settings for the laser processing apparatus, program for making settings for the laser processing apparatus, and computer-readable recording medium: It is an object to enable control according to an optimum temperature condition for a wavelength conversion device. There are provided a laser medium for creating fundamental-wave laser light with a fundamental frequency; a wavelength conversion device which, if the fundamental-wave laser light from the laser medium is inputted thereto,... Agent: Kilyk & Bowersox, P.l.l.c.

20090154508 - Light-generating apparatus with broadband pumping laser and quasi-phase matching waveguide: A light-generating apparatus comprises a broadband pumping laser configured to emit a broadband pumping light having a bandwidth larger than 10 nanometers and a broadband wavelength-converting device. The broadband wavelength-converting device includes a domain-inverted structure configured to convert the broadband pumping light into at least one conversion light by using... Agent: Wpat, PC Intellectual Property Attorneys

20090154507 - Nonresonant multiple pass nonlinear structure: A system, a structure, and a method for the generation of second harmonic light are provided. A laser system comprises a seed laser that produces a fundamental frequency light, and a nonresonant multiple pass nonlinear structure generates a second harmonic light using the fundamental frequency light. A second harmonic outcoupler... Agent: Slater & Matsil, L.L.P.

20090154510 - Optoelectrical assembly with frequency-doubled solid state laser: An optoelectrical assembly (1) has a modular frequency-doubled solid state laser (2), which is fixed so as to be aligned therein, with an optical resonator (3) which is connected in a thermally conducting manner to a heat source (5) which is controllable by controlling means (4). The operating temperature (T)... Agent: Abelman, Frayne & Schwab

20090154511 - Optical output control circuit and optical output monitoring method for monitoring optical output from laser light source: A Light receiver generates a monitoring voltage according to an optical output of an LD element. The control circuit obtains a set value according to the ambient temperature around the LD element, and controls the optical output of the LD element on the basis of the comparing the result between... Agent: Nec Corporation Of America

20090154512 - Method and device for monitoring light: A method for monitoring laser light launched into a core of a single mode fiber includes launching a portion of light directly into the cladding about the core. The cladding launched light is a known fraction of the core launched light and can be monitored by placing a detector about... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20090154513 - Multilayer board and light-emitting module having the same: Provided are a multilayer board and a light-emitting module having the same. The light-emitting module comprises a light-emitting diode chip and a multilayer board. The multilayer board is electrically connected to the light-emitting diode chip and comprises a nonconductive heat sink via and a thin copper layer.... Agent: Birch Stewart Kolasch & Birch

20090154514 - Optical amplifier-integrated super luminescent diode and external cavity laser using the same: A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over... Agent: Rabin & Berdo, PC

20090154515 - Semiconductor light emitting device: In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less... Agent: Sughrue Mion, PLLC

20090154516 - Particle display with jet-printed color filters and surface coatings: A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched... Agent: Patent Documentation Center Xerox Corporation

20090154517 - Hybrid laser diode for single mode operation and method of fabricating the same: Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the... Agent: Ampacc Law Group

20090154518 - Laser beam transformer and projector: An original laser-radiation beam having a symmetrical M2 but poor beam quality is sliced in one transverse axis, by a fanned-out stack of parallel transparent plates, into a plurality of beam slices. The beam-slices are also spread by the stack of plates in another transverse axis perpendicular to the first... Agent: Stallman & Pollock LLP

20090147807 - Fiber grating laser: A fiber (Bragg) laser comprising a fiber with a cladding and a core having a (Bragg) grating inscribed in the core forming a laser cavity.... Agent: Buchanan Intellectual Property Office LLC

20090147808 - Method and system for tunable pulsed laser source: A tunable pulsed laser source comprising a seed source adapted to generate a seed signal and an optical circulator. The optical circulator includes a first port coupled to the seed source, a second port, and a third port. The laser source also includes an amplitude modulator characterized by a first... Agent: Townsend And Townsend And Crew, LLP

20090147809 - Semiconductor laser drive system and semiconductor laser driving method: The semiconductor laser drive system in an optical pickup configured such that a turn light 9e from an irradiated object of a laser beam 9 emitted from a semiconductor laser 2 enters into the semiconductor laser 2 is composed of a drive circuit 3 for driving the semiconductor laser 2;... Agent: Oliff & Berridge, PLC

20090147810 - Method for controlling a temperature of a thermo-electric cooler and a temperature controller using the same: The present invention is to provide a control algorithm of a thermo-electric cooler (TEC) for a laser diode (LD) where a rush current accompanied with the stepwise change of the target temperature of the TEC. First, the controller stops the TEC driver prior to the setting of the target temperature,... Agent: Michael A. Makuch, Esq. Smith, Gambrell & Russell, LLP

20090147811 - Wavelength conversion laser light source, laser light source device and two-dimensional image display device adopting the same, and method of setting temperature of wavelength conversion element: A wavelength conversion laser light source includes: an element temperature switching section that switches a temperature of the wavelength conversion element according to a harmonic wave output value as set in an output setting device, and the element temperature switching section for switching a temperature of a wavelength conversion element... Agent: Wenderoth, Lind & Ponack L.L.P.

20090147812 - Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage: The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping... Agent: Sughrue Mion, PLLC

20090147813 - Light-emitting device and method for producing light emitting device: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated... Agent: Amin, Turocy & Calvin, LLP

20090147815 - Edge emitting semiconductor laser comprising a waveguide: In an edge emitting semiconductor laser comprising an active layer (3) that generates laser radiation (13) and is embedded into a first waveguide layer (1), wherein the first waveguide layer (1) is arranged between a first cladding layer (4) and a second cladding layer (5) and is delimited by side... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090147814 - Semiconductor laser device and method for manufacturing the same: A ridge stripe type semiconductor laser device is provided, on a semiconductor substrate (102), with a first conduction type cladding layer (103), an active layer (104), a second conduction type first cladding layer (105), a second conduction type second cladding layer (108) of a ridge type stripe shape for confining... Agent: Hamre, Schumann, Mueller & Larson P.C.

20090147816 - Semiconductor laser device: In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor... Agent: Miles & Stockbridge PC

20090147817 - Optical module, method of manufacturing the optical module, and data communication system including the optical module: An optical module includes a fiber array, a laser diode array and a photodiode array. The fiber array has optical fibers which are divided to a transmitter group and a receiver group. The laser diode array has laser diodes which are grouped in a transmitter group. The photodiode array has... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090147818 - Enhanced surface-emitting photonic device: A surface-emitting photonic device including a structure disposed therein to enhance a performance thereof. The structure includes a two dimensionally periodic second order distributed feedback device (DFB) to emit diffraction limited outcoupled laser light having a predetermined wavelength along a propagation direction that is substantially normal to a plane of... Agent: Cantor Colburn LLP-ibm Europe

20090141746 - Solid-state laser device: In a solid-state laser device, a single outer casing (1) having an approximately sealed structure is included; a single or a plurality of inner casings (2) are provided inside the outer casing (1); in some or all of the inner casings (2), an air cleaning unit (4) is included in... Agent: Sughrue Mion, PLLC

20090141747 - External cavity wavelength tunable laser device and optical output module: In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single-peak reflection spectrum characteristic within a laser wavelength tuning range is... Agent: Sughrue Mion, PLLC

20090141748 - Tunable laser light source and controlling method of the same: The objective of the present invention is to provide with a tunable laser light source and controlling method of the same capable of detecting the degree of out-of-tune-ness, maintaining simple configuration. The tunable laser light source comprises a gain medium 1, a tunable band rejector 2, an etalon 3, and... Agent: Nixon & Vanderhye, PC

20090141749 - Laser module: A laser module including a light emitter, a filter, a nonlinear optical crystal, a first temperature adjuster, and a second temperature adjuster is provided. The light emitter emits a first beam. The filter is disposed on a transmission path of the first beam and reflects the first beam. The nonlinear... Agent: J C Patents, Inc.

20090141752 - Dual pulse-width medical laser with presets: A medical laser device is described that generates a laser beam controllable with presets as to pulse duration, pulse repetition rate, power and energy per pulse. The device also provides presets with respect to water and air outputs. Parametric values for power, pulse duration, pulse repetition rate, and energy per... Agent: Kenton R. Mullins Stout, Uxa, Buyan & Mullins, LLP

20090141751 - Pulse light source: The present invention relates to a pulse light source which has a MOPA structure using a directly-modulated semiconductor laser as a seed light source, and is easily capable of outputting pulse light with a pulse width of a sub-nanosecond. The pulse light source comprises a seed light source, a first... Agent: Venable LLP

20090141750 - Systems and methods for link processing with ultrafast and nanosecond laser pulses: Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle... Agent: Electro Scientific Industries/stoel Rives, LLP

20090141753 - Two-dimensional image display device: There has been a problem that interference noise called speckle noise occurs in a two-dimensional image display device using laser, and there is no applicable green light source although the speckle noise can be reduced by using a multi-wavelength light source. The present invention adopts a Yb-doped clad pump fiber... Agent: Wenderoth, Lind & Ponack L.L.P.

20090141754 - Method and apparatus for driving semiconductor lasers, and method and apparatus for deriving drive current patterns for semiconductor lasers: Semiconductor lasers are driven such that high output laser beams are stably obtained without a long start up time. The light outputs of a plurality of semiconductor lasers are detected by photodetectors. The semiconductor lasers are driven by automatic power control based on comparison results between the output of the... Agent: Sughrue Mion, PLLC

20090141755 - Method for controlling laser power of an optical pickup unit: A method for controlling laser power of an optical pickup unit (OPU) includes: providing a first relationship between the laser power and a driving parameter, wherein the driving parameter is utilized for driving a laser diode (LD) of the OPU, and the first relationship corresponds to a first temperature; utilizing... Agent: North America Intellectual Property Corporation

20090141756 - Adaptive thermal feedback system for a laser diode: According to one embodiment of the disclosure, a thermal feedback system comprises an adaptive controller coupled to a heater element and a temperature sensor. The heater element and the temperature sensor are thermally coupled to a laser diode. The adaptive controller estimates an estimated error according to a measured temperature... Agent: Texas Instruments Incorporated

20090141757 - Optical amplifiers: An optical amplifier comprises an optical fibre, a pump laser for optically pumping the optical fibre to amplify an optical signal, a TEC 1 for cooling the pump laser on receipt of a cooling current, a temperature sensor 2 for monitoring the temperature of the amplifier housing; and a control... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20090141758 - Semiconductor laser equipment: The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which... Agent: Drinker Biddle & Reath (dc)

20090141760 - Drive control apparatus and drive control method of semiconductor laser: According to one embodiment, a drive control apparatus of a semiconductor laser includes a driving circuit which drives the semiconductor laser by applying pulses transiting from bias current to peak current to the semiconductor laser as laser driving current that causes relaxation oscillation of emission light intensity of the semiconductor... Agent: Knobbe Martens Olson & Bear LLP

20090141761 - Light source device, lighting device, monitoring device, and image display apparatus: A light source device includes a plurality of first laser emission units and a plurality of second laser emission units for emitting light. The plurality of first laser emission units and the plurality of second laser emission units are disposed on a flat surface. The first laser emission units and... Agent: Workman Nydegger 1000 Eagle Gate Tower

20090141759 - Method for deriving precise control over laser power of an optical pickup unit, and associated automatic power calibration circuit: A method for deriving precise control over laser power of an optical pickup unit (OPU) includes: providing an analog-to-digital converter (ADC) within an automatic power calibration (APC) circuit to derive a path gain and/or a path offset from the APC circuit; and selectively performing compensation according to the gain and/or... Agent: North America Intellectual Property Corporation

20090141762 - Semiconductor device and semiconductor laser driving device: In a semiconductor device, a switching current generator circuit generates and outputs a switching current such that a voltage input to a switching current setting terminal is equal to a voltage input to a switching current control terminal, and a bias current generator circuit generates and outputs a bias current... Agent: Dickstein Shapiro LLP

20090141763 - Semiconductor laser: There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including... Agent: Antonelli, Terry, Stout & Kraus, LLP

20090141764 - Semiconductor laser and method of making the same: In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to... Agent: Smith, Gambrell & Russell

20090141765 - Nitride semiconductor laser device: A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer... Agent: Rabin & Berdo, PC

20090141766 - Surface emitting semiconductor laser: In a surface emitting semiconductor laser, the primary surface of a substrate includes first to third areas. The first and second areas are contiguous to each other, and the third area surrounds the first and second areas. A first DBR is provided on the substrate. An active layer is provided... Agent: Smith, Gambrell & Russell