Coherent light generators inventions 04/09

20090110009 - Optical fiber grating tuning device and optical systems employing same: A tuning device for an optical fiber grating includes a multi-part confinement member. The confinement member includes a feature such as a channel in which the fiber grating is disposed. Movement of the different parts of the confinement member relative to one another causes compression or tension of the fiber... Agent: Anderson Gorecki & Manaras LLP

20090110008 - Optical fiber pump multiplexer: One or more single mode few-moded or multimode fibers are incorporated into a bundle to carry input to a fiber amplifier or output from a fiber amplifier or a fiber laser. The input is at the signal wavelength, which is the wavelength where amplification or lasing occurs. Each of the... Agent: Sughrue Mion, PLLC

20090110010 - Fiber-focused diode-bar optical trapping for microfluidic manipulation: The direct integration of light and optical control into microfluidic systems presents a significant hurdle to the development of portable optical trapping-based devices. A simple, inexpensive fiber-based approach is provided that allows for easy implementation of diode-bars for optical particle separations within flowing microfluidic systems. Models have also been developed... Agent: Sheridan Ross PC

20090110011 - Optical component for laser beam: The present invention is to suppress deterioration of durability at the time when an optical component using a material optimized to be used in an optical path of a laser beam for performing reproduction/recording for a CD and a DVD is used in an optical head device using light sources... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090110012 - Method for having laser light source in standby status: When the laser light source is caused to standby, the temperatures of semiconductor laser 1 and semiconductor laser 9 are changed by approximately 3° C. from the temperature when the laser light source is always being used. With a temperature change of approximately 3° C., the wavelengths of the laser... Agent: Oliff & Berridge, PLC

20090110013 - Multi-component wavelength conversion devices and lasers incorporating the same: According to one embodiment of the present invention, a frequency-converted laser source is provided wherein the wavelength conversion device comprises a plurality of waveguide components comprising respective input faces positioned in an effective focal field of the laser source. Individual ones of the waveguide components contribute different elements to a... Agent: Corning Incorporated

20090110014 - Small form factor transmitter optical subassembly (tosa) having functionality for controlling the temperature, and methods of making and using the tosa: The invention is directed to an OSA having a TO-can-type configuration that is relatively low-cost to manufacture and that has functionality for monitoring and controlling the temperature of the laser diode without the need for additional pins or an increase in the size of the OSA. Thus, the OSA typically... Agent: Kathy Manke Avago Technologies Limited

20090110015 - Current driver and power control for electrophotographic devices: A laser driver comprises a plurality of current sources, including at least one bias current source and at least two drive current sources. To control the laser driver, a set of operating states is defined where each operating state corresponds to a desired laser output power level and a ratio... Agent: Lexmark International, Inc. Intellectual Property Law Department

20090110016 - Gas laser device: A gas laser device is presented that produces a near diffraction limited round beam exiting the discharge vessel. Through the use of a simple focusing system, additional waveguide strip and a spatial filter in conjunction with the new asymmetric hybrid planar waveguide resonator, a round diffraction limited beam can be... Agent: Downs Rachlin Martin PLLC

20090110017 - Semiconductor light-emitting element and method of manufacturing the same: A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, a refractive index gradient layer provided on a light extraction surface of the semiconductor layer, and a holding substrate bounded to an outer surface of the refractive index gradient layer with an adhesion layer interposed therebetween. A refractive... Agent: Brinks Hofer Gilson & Lione

20090110018 - Laser diode expitaxial wafer and method for producing same: A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding... Agent: Mcginn Intellectual Property Law Group, PLLC

20090110019 - Target marking system having a gas laser assembly and a thermal imager: A handheld target marker is provided, wherein the target marker includes a housing retaining a gas laser, a collimating or focusing lens, a driver and a power supply. The laser produces a thermal infrared beam which can be selectively directed to impinge upon a target. The impinging beam is viewable... Agent: Stephen B. Salai, Esq. Harter Secrest & Emery LLP

20090110020 - Light emitting system: A light emitting system is disclosed, including a light generator, a complex lens and an activating unit. The light generator provides a light beam emitted in a first direction in parallel to an optic axis. The complex lens, disposed on a path of the light beam, includes a plurality of... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20090110021 - Plasmon stabilized unimodal laser diodes: A device having a light cavity includes, at one end, a plasmonic reflector having a grating surface for coupling incoming light into traverse plasmon waves and for coupling the traverse plasmon wave into broaden light, the surface serving to redistribute light within the cavity, the reflector being well suited for... Agent: Carole A. Mulchinski, M1/040 The Aerospace Corporation

20090103574 - Laser module package and display apparatus using the same: Disclosed are a laser module apparatus and a display apparatus using the same. In accordance with an embodiment of the present invention, a laser module package which generates a green laser beam can include a pumping light source, configured to generate and output a pump beam; a laser medium, configured... Agent: Christensen, O'connor, Johnson, Kindness, PLLC

20090103575 - Laser device: A laser device, which includes an oscillator unit having a rectangular-solid-shaped housing containing a laser oscillator for generating and outputting a laser light; an amplifier unit having a rectangular-solid-shaped housing containing an amplifier that receives and amplifies the laser light to output; and, a group of optical elements including optical... Agent: Kratz, Quintos & Hanson, LLP

20090103576 - System and method of providing second harmonic generation (shg) light in a single pass: A system and method of providing second harmonic generation (SHG) light in a single pass. A frequency stabilized semiconductor seed laser provides a first frequency light to a fiber amplifier. A focusing optic configuration receives the amplified first frequency light and focuses the amplified first frequency light into a non-linear... Agent: Slater & Matsil, L.L.P.

20090103577 - Beam irradiation apparatus: A laser beam and a servo beam are incident on a mirror and a transparent member, respectively, so that an angle direction A1 from an optical axis of the laser beam to be incident on the mirror to an incidence plane of the mirror and an angle direction A2 from... Agent: Ditthavong Mori & Steiner, P.C.

20090103578 - Method of protecting a laser against damage caused by undesired incident light in a resonator: A method of protecting a laser against damage caused by undesired incident light in a resonator includes measuring a parameter, which is a measure for the optical power of the incident light. In more concrete terms, the optical power occurring at a resonator mirror is measured. In response to a... Agent: Lerner Greenberg Stemer LLP

20090103579 - Processing apparatus and method of processing and method of making leaf spring: A light source emits a laser beam to the object through an output end. An optical system is placed between the output end and the object. The optical system adjusts the energy of the laser beam emitted, through the output end, onto a unit area for a unit time. The... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090103580 - Vertically displaced stack of multi-mode single emitter laser diodes: An optical source comprised of a stack of at least two laser diode subassemblies is provided. Each laser diode subassembly includes a submount and a multi-mode, single emitter laser diode. Each of the at least two laser diode subassemblies is mounted to a stepped mounting member such that the output... Agent: Patent Law Office Of David G. Beck

20090103581 - Semiconductor laser device: In a semiconductor laser device, in a case where an emission direction of a laser beam from a semiconductor laser element portion is a front side, a first front end of a first lead is arranged rearward beyond a first rear end of a second heatsink, and a second surface... Agent: Mots Law, PLLC

20090103584 - Nitride semiconductor laser device and method of producing the same: A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a... Agent: Harness, Dickey & Pierce, P.L.C

20090103582 - Optical waveguide device and manufacturing method thereof: An optical waveguide device which is free from interference with an optical path between a light emitting element and an optical waveguide thereof, and to provide a method of manufacturing the optical waveguide device. A light emitting element (5) is provided on an upper surface of a first under-cladding layer... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090103583 - Surface emitting laser and manufacturing method thereof: On an n-type GaN buffer layer serving as a common semiconductor layer, mesa regions are formed. The mesa region is formed of a semiconductor stack formed of an n-type GaN layer, an active layer and a p-type GaN layer. A current blocking region is not formed in the mesa region,... Agent: Rabin & Berdo, PC

20090103585 - Optical semiconductor element and optical semiconductor device: An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090097508 - Fiber laser arrangement having a high beaming power: A fiber laser arrangement having a high beaming power includes a plurality of continuously operating coherent individual fiber lasers. Pumping energy generated by a common master oscillator operated in the longitudinal mode is distributed to the fiber lasers by way of a fiber splitter, in a branched manner. An integrated... Agent: Crowell & Moring LLP Intellectual Property Group

20090097507 - Wavelength and intensity stabilized laser diode and application of same to pumping solid-state lasers: An efficient and low-noise solid-state laser is optically pumped by one or more laser diode(s) driven by RF modulated current. The solid-state laser operation is stabilized by the pump source stable in both spectrum and intensity, in conjunction with automatic power control wherein the feedback loop accurately reflects the true... Agent: Sheng-bai Zhu

20090097509 - Laser apparatus: This utility model discloses a type of laser apparatus comprising a back mirror, a YV04 crystal, a Q-SW crystal, a front mirror, an optical pumping source, an optical fiber splice, a directional light-regulating lens and a laser head. The back mirror is a plano-concave lens, the incidence point of optical... Agent: Ben Kwong

20090097511 - Laser light source and method of operating the same: A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20090097510 - Optical parametric micro-oscillator comprising couplet cavities: The invention relates to the field of optical parametric oscillators (OPO), especially to an essentially vertical monolithic system (S) for parametric conversion from a pump wave with a pump wavelength, said system comprising at least two resonant cavities (6, 7). Said cavities are coupled by at least one coupling mirror... Agent: Duane Morris LLP - AtlantaIPDepartment

20090097512 - Optical pulse sources: An optical pulse source comprising a DPSS pump laser, a photonic crystal fiber (PCF), and acousto-optic modulator (AOM) gating device is disclosed. The pump pulses are coupled through lenses to the AOM gating device, which is synchronized to the pump laser and is operable to gate the pump pulses to... Agent: OpticusIPLaw, PLLC

20090097513 - Failure protection apparatus and system: A safety and interlock circuit for use with devices which could cause injury if an error condition causes improper operation. A control program executing on a processor monitors a variety of device conditions, including pulse over-duration threshold, diode over-current threshold, pulse lock-out duration, temperature threshold, and pulse repetition frequency limit,... Agent: Law Offices Of James E. Eakin

20090097514 - Femtosecond laser processing system with process parameters, controls and feedback: A femtosecond laser based laser processing system having a femtosecond laser, frequency conversion optics, beam manipulation optics, target motion control, processing chamber, diagnostic systems and system control modules. The femtosecond laser based laser processing system allows for the utilization of the unique heat control in micromachining, and the system has... Agent: Sughrue Mion, PLLC

20090097515 - Yb: and nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems: The invention describes classes of robust fiber laser systems usable as pulse sources for Nd: or Yb: based regenerative amplifiers intended for industrial settings. The invention modifies adapts and incorporates several recent advances in FCPA systems to use as the input source for this new class of regenerative amplifier.... Agent: Sughrue Mion, PLLC

20090097516 - Rf and microwave receivers based on electro-optic optical whispering gallery mode resonators: RF receivers based on whispering gallery mode resonators.... Agent: Fish & Richardson, PC

20090097520 - Inexpensive variable rep-rate source for high-energy, ultrafast lasers: System for converting relatively long pulses from rep-rate variable ultrafast optical sources to shorter, high-energy pulses suitable for sources in high-energy ultrafast lasers. Fibers with positive group velocity dispersion (GVD) and self phase modulation are advantageously employed with the optical sources. These systems take advantage of the need for higher... Agent: Sughrue Mion, PLLC

20090097519 - Semiconductor laser and method for producing the semiconductor laser: A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) comprises between the planar surfaces at least one active layer (10) for generating radiation.... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090097517 - Vcsel device and method for fabricating vcsel device: Provided is a VCSEL device that includes a substrate on which at least a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type are stacked. The second semiconductor multilayer film forms a resonator together with the... Agent: Fildes & Outland, P.C.

20090097518 - Vertical cavity surface emitting laser diode and a method for producing the same: A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region... Agent: Michael A. Makuch, Esq. Smith, Gambrell & Russell, LLP

20090097521 - Side surface light emitting semiconductor element and method of manufacturing the same: A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×1019 cm−3; a ridge having a striped shape and formed in an upper portion of a laminated structure which includes the AlGaN layer and an active layer; and... Agent: Rabin & Berdo, PC

20090097522 - Vertical cavity surface emitting laser device: A vertical cavity surface emitting laser device is provided that comprises a monolithically integrated grating (12) disposed over an output mirror surface of the device, the grating (12) being separate from the output mirror surface and being adapted to provide an on-axis forward diffraction mode at a characteristic wavelength of... Agent: Patterson & Sheridan L.L.P. Nj Office

20090097523 - Semiconductor laser apparatus and method of manufacturing the same: Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the... Agent: Mcdermott Will & Emery LLP

20090097524 - Optical pumping device: The invention relates to an optical pumping device (12). This device (12) comprises at least one thin layer (13) having a given volume, produced on an active material base doped with laser ions. The device (12) also comprises at least one pump beam (19) having a cross section of given... Agent: Nixon Peabody LLP

20090092156 - Devices and methods for providing stimulated raman lasing: Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein... Agent: Wilmerhale/columbia University

20090092157 - Powerful fiber laser system: A powerful fiber laser system is configured with at least one large-area multi-clad rare-earth doped fiber, which is configured with a MM core capable of propagating a single mode laser emission at a first wavelength, and with at least one pumping assembly capable of generating an optical pump output at... Agent: Ipg Photonics Corporation

20090092158 - Multi-aperture three-dimensional beamforming: In one embodiment, a system is provided that includes: a mode-locked laser source configured to provide a pulsed multi-frequency laser output signal having spectrum with a plurality of comb lines, wherein one of the comb lines is a reference comb line, the comb lines forming a plurality of comb line... Agent: Macpherson Kwok Chen & Heid LLP

20090092160 - External cavity laser with a tunable holographic element: Embodiments of systems and methods are provided for a tunable laser device. The tunable laser device may include a tunable Bragg reflector that allows its wavelength to be tuned via temperature and/or pressure. This Bragg reflector may include holographic material in which a Bragg grating may be formed comprising parallel... Agent: Jagtiani + Guttag

20090092159 - Semiconductor light-emitting device with tunable emission wavelength: The present invention is to provide a semiconductor light-emitting device with a variable output wavelength that reduces the wavelength dependence of the optical output power. The light-emitting device provides an optical cavity defined by a reflective end and a reflector. The gain waveguide and the ring resonator are set within... Agent: Smith, Gambrell & Russell

20090092161 - Laser pointer with controllable pattern and size of projected image: A laser pointer includes a human-machine interface disposed above the housing for users to control components inside the housing to decide patterns and size of the projecting image. The components consist of a frequency/phase control module, a driving energy control module, a laser beam generating module and a light scanning... Agent: Muncy, Geissler, Olds & Lowe, PLLC

20090092162 - Means for improved implementation of laser diodes and laser diode arrays: A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or... Agent: Nixon & Vanderhye, PC

20090092163 - Laser diode and method of manufacturing the same: Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one... Agent: Sonnenschein Nath & Rosenthal LLP

20090092164 - Optical semiconductor device and method of manufacturing same: The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an... Agent: Young & Thompson

20090092165 - Laser diode having nano patterns and method of fabricating the same: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type... Agent: H.c. Park & Associates, PLC

20090092166 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the... Agent: Harness, Dickey & Pierce, P.L.C

20090092167 - Mode-locked short pulse laser resonator and short pulse laser arrangement: A mode-locked short pulse laser resonator including a pump laser beam input, a non-linear laser medium, a plurality of resonator mirrors as well as a first outcoupler mirror and a second outcoupler mirror, wherein the first outcoupler mirror is arranged for coupling out laser radiation having first spectral properties, and... Agent: Ostrolenk Faber Gerb & Soffen

20090092168 - Laser module and optical pickup device: A laser module includes a stem provided with a device mounting structure; a light emitting device mounted onto the stem by use of the device mounting structure a tubular cap fixed to the stem in the state of surrounding the light emitting diode and provided with an aperture through which... Agent: Sonnenschein Nath & Rosenthal LLP

20090086769 - Semiconductor device: A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package... Agent: Mcdermott Will & Emery LLP

20090086770 - Optical fiber and optical fiber ribbon, and optical interconnection system: An optical fiber, made of silica-based glass, comprising a core and a cladding, each of the optical fiber having a mode field diameter of 5.5 μm or larger at a wavelength of 1100 nm, transmitting light with a wavelength of 1250 nm in a single mode, and having a bending... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090086772 - Mode-locked solid-state laser apparatus:

20090086771 - Negative dispersion mirror and mode-locked solid-state laser apparatus including the mirror: In a mirror including a substrate and a dielectric multilayer coating structure formed on the substrate, the multilayer coating structure includes two mirror-function layer portions, each formed by a plurality of Layers deposited one on another, and a cavity layer that is arranged between the two mirror-function layer portions, and... Agent: Birch Stewart Kolasch & Birch

20090086774 - Control device, laser device, wavelength converting method, and program: A wavelength converting method of a wavelength tunable light source that is performing a phase modulation for a light output is disclosed. The wavelength converting method has an amplitude of a phase modulation have an amplitude value that is temporarily greater during a wavelength conversion than a phase modulation amount... Agent: Nec Corporation Of America

20090086773 - Method and system for tunable pulsed laser source: A tunable pulsed laser source comprising a seed source adapted to generate a seed signal and an optical circulator. The optical circulator includes a first port coupled to the seed source, a second port, and a third port. The laser source also includes an amplitude modulator characterized by a first... Agent: Townsend And Townsend And Crew, LLP

20090086775 - Laser source with interdigital heater electrodes and underlying current confinement layer: A semiconductor laser source is provided wherein the wavelength selective section of the laser diode comprises a P+ type current confinement layer and first and second sets of interdigital heater electrodes formed over the current confinement layer. Individual electrode digits of the first and second sets of interdigital heater electrodes... Agent: Corning Incorporated

20090086776 - Optical transmitter providing a plurality of transmitter units each having a thermo-electric cooler connected in series to each other: In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and... Agent: Venable LLP

20090086777 - Optical disk drive and laser power control method: According to one embodiment, an optical disk drive includes a monitor diode which monitors a laser output of a laser diode irradiating a laser beam to an optical disk, a detector which sets an output termination mode when a state that a monitor signal obtained from the monitor diode exceeds... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20090086778 - Nitride based semiconductor laser device: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion... Agent: Mots Law, PLLC

20090086779 - Semiconductor laser diode with reduced parasitic capacitance: The LD of the invention provides a semiconductor stack including the current confinement region with the active mesa and the semi-insulating burying regions putting the active mesa therebeteen and the conductive region in contiguity with the current confinement region. The current confinement region and the conductive region are provided on... Agent: Venable LLP

20090086781 - Monolithic semiconductor laser: An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and... Agent: Rabin & Berdo, PC

20090086780 - Semiconductor laser device and method for fabricating the same: In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red... Agent: Mcdermott Will & Emery LLP

20090086783 - Nitride based semiconductor laser device: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane.... Agent: Mots Law, PLLC

20090086782 - Semiconductor laser device and method for manufacturing the same: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding... Agent: Hamre, Schumann, Mueller & Larson P.C.

20090086784 - Quantum well intermixing: Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming... Agent: Corning Incorporated

20090086785 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090086786 - Two-dimensional surface-emitting laser array: Provided is a two-dimensional surface-emitting laser array that enables to dispose more elements in a smaller area and enables compact size, high resolution, and high speed thereof. The two-dimensional surface-emitting laser array includes surface-emitting laser elements arranged in a two-dimensional manner of m rows and n columns (m is an... Agent: Fitzpatrick Cella Harper & Scinto

20090086787 - Fiber ring laser: A fiber ring laser is provided, which includes an optic amplifier, a first optical coupler (OCP), a second OCP, a first fiber ring, a second fiber ring, a first polarization controller (PC), and a second PC. The first fiber ring is coupled to the optic amplifier, the first and the... Agent: Jianq Chyun Intellectual Property Office