Coherent light generators inventions 03/09

20090080466 - Coherent light source and recording and reproduction device using the same: For performing hologram recording or reproduction, an oscillation wavelength half value width Δλ of a coherent light source 21 satisfies a relationship of Δλ<λ2/(S×2 sin θ), when a substantial hologram size is S, a substantial cross angle between reference light and signal light is θ, and the oscillation wavelength of... Agent: Wenderoth, Lind & Ponack L.L.P.

20090080471 - Dispersion managed fiber stretcher for high-energy short pulse femotosecond fiber laser system: A fiber Chirped Pulse Amplification (CPA) laser system that includes a fiber mode-locking oscillator for generating a seed laser for projecting to a stretcher for generated a pulse-stretched laser for projecting to a multiple stage amplifier. The multiple stage amplifier further amplifying said laser for projecting to a compressor for... Agent: Xin Wen

20090080468 - Locally perturbed optical fibers for mode transformers: The specification describes optical devices and related methods wherein the input has multiple modes, and at least one of the multiple modes are respectively converted by one or more multiple mode transformers to produce an output with predetermined modes that are different from the input. In one embodiment the output... Agent: Law Office Of Peter V.d. Wilde

20090080470 - Locally perturbed optical fibers for mode transformers: The specification describes optical devices and related methods wherein an input mode is converted by multiple LPG mode transformers to produce an output with multiple predetermined modes.... Agent: Law Office Of Peter V.d. Wilde

20090080469 - Optical coupler devices, methods of their production and use: The present invention relates to an optical component comprising an acceptance fibre, e.g. a photonic crystal fibre, for propagation of pump and signal light, a number of pump delivery fibres and a reflector element that reflects pump light from the pump delivery fibres into the acceptance fibre. It is an... Agent: Buchanan, Ingersoll & Rooney PC

20090080472 - Optical fiber for an optical fiber laser, method for fabricating the same, and optical fiber laser: The optical fiber 1 for an optical fiber laser is provided with a rare earth element doped core 2 doped with a rare earth element, and a cladding 3 formed at an outer periphery of the rare earth element doped core 2. In the optical fiber 1 for an optical... Agent: Mcginn Intellectual Property Law Group, PLLC

20090080467 - Pulse repetition frequency-multipler for fiber lasers: MOPA laser apparatus includes a master oscillator and a preamplifier providing a train of optical pulses. The pulse train is input to a fiber optic device arranged to multiply the pulse-repetition frequency (PRF) of the input pulse train. The PRF multiplying device divides each pulse in the into train into... Agent: Stallman & Pollock LLP

20090080473 - Semiconductor saturable absorber and fabrication method thereof: A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier... Agent: Michael W. Taylor

20090080474 - Mode-locked laser apparatus: A mode-locked laser apparatus includes a resonator (laser cavity), a mode-locking device placed in the resonator, a solid-stated laser medium that is doped with Yb (ytterbium) and placed in the resonator and an excitation means for causing excitation light to enter the solid-state laser medium. In the mode-locked laser apparatus,... Agent: Sughrue Mion, PLLC

20090080475 - Wavelength conversion optical element, method for fabricating wavelength conversion optical element, wavelength conversion device, ultraviolet laser irradiator and laser material processing system: An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090080476 - Immersion lithography laser light source with pulse stretcher: An apparatus and method which may comprise a pulsed gas discharge laser which may comprise a seed laser portion; an amplifier portion receiving the seed laser output and amplifying the optical intensity of each seed pulse; a pulse stretcher which may comprise: a first beam splitter operatively connected with the... Agent: William C. Cray Cymer, Inc.

20090080478 - Method and apparatus for changing the length of a laser pulse: The apparatus for extending or lengthening a laser pulse has a beam splitter. An incident laser pulse is split by the beam splitter into at least one first partial pulse and a second partial pulse. The first partial pulse is conducted through a delaying travel path section with a number... Agent: Striker, Striker & Stenby

20090080477 - Seed source for high power optical fiber amplifier: Methods and systems are provided to reduce stimulated Brillouin scattering in high power optical fiber amplifiers. In an embodiment, a seed source includes a narrow linewidth semiconductor laser driven with a current ramp that simultaneously sweeps the optical power and the lasing frequency at a rate fast enough to reduce... Agent: Townsend And Townsend And Crew, LLP

20090080479 - Method and system for operating an atomic clock using a self-modulated laser with electrical modulation: A polarization gain medium such as an emitting laser diode provides the optical pumping. An atomic vapor cell is positioned in the laser cavity providing spontaneous push-pull optical pumping inside the laser cavity. This causes the laser beam to be modulated at hyperfine-resonance frequency. A clock signal is obtained from... Agent: Diane Dunn Mckay, Esq. Mathews, Shepherd, Mckay & Bruneau, P.A.

20090080480 - Laser-induced optical wiring apparatus: A laser-induced optical wiring apparatus includes a substrate, first and second light-reflecting members provided on the substrate separately from each other, an optical waveguide provided on the substrate for optically coupling the first and second light-reflecting members to form an optical resonator, a first optical gain member provided across the... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090080481 - Semiconductor device with corner reflector: A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090080482 - Gain-coupled distributed feedback semiconductor laser including first-order and second-order gratings: A gain-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The DFB laser may be configured with a substantially pure gain-coupled grating and may be configured to provide facet power asymmetry. The grating may... Agent: Applied Optoelectronics, Inc.

20090080483 - Semiconductor laser device and manufacturing method thereof: A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end... Agent: Mcdermott Will & Emery LLP

20090080484 - Semiconductor laser apparatus: A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the... Agent: Leydig Voit & Mayer, Ltd

20090080485 - Nitride semiconductor laser device: The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor... Agent: Harness, Dickey & Pierce, P.L.C

20090080486 - Laser device using an inorganic electro-luminescent material doped with a rare-earth element: A laser device using an inorganic electro-luminescent material doped with a rare-earth element is provided. A dielectric layer such as SiO2 is arranged on a silicon substrate. A polycrystalline thin film of Er-doped ZnS or ZnSe is arranged on the dielectric layer. An electrode is formed on the dielectric layer.... Agent: Mcneely Bodendorf LLP

20090080488 - Surface emitting laser: A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a... Agent: Sughrue Mion, PLLC

20090080487 - Vertical cavity surface emitting laser diode (vcsel) with enhanced emitting efficiency: A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films... Agent: Smith, Gambrell & Russell

20090080489 - Vertical cavity surface emitting laser and image forming apparatus using the vertical cavity surface emitting laser: Provided is a laser having a multilayer reflector that suppresses the multimode operation. A vertical cavity surface emitting laser includes a first mirror, a cavity having an active layer, and a second mirror that are laminated. The second mirror is a multilayer reflector comprised of a first layer and a... Agent: Fitzpatrick Cella Harper & Scinto

20090074014 - Mode selection for single frequency fiber laser: A method for generating a laser projection by employing a laser gain medium for receiving an optical input projection from a laser pump. The method further includes a step of generating a laser of a resonant peak from a single mode selection filter.... Agent: Xin Wen

20090074013 - Thulium doped fiber configuration for enhanced high power operation: An optical fiber amplifier includes a laser pump source for generating laser pump light; a fiber including an inner cladding layer optically coupled to a laser pump source for receiving laser pump light; a large mode area (LMA) core surrounded by the inner cladding, the LMA core including a confined... Agent: Posz Law Group, PLC

20090074015 - Laser output switching by transverse mode modulation: A pulsed laser for machining, has a mode switch, e.g. Q-switch device (15, 30, 40), in a resonant optical cavity (20) capable of supporting a given lasing mode, e.g. a transverse mode of oscillation when lasing action is started, arranged to induce, e.g. temporarily, a localized change, e.g. loss, in... Agent: Bacon & Thomas, PLLC

20090074016 - Apparatus for terahertz wave generation from water vapor: Apparatus for Terahertz wave generation. An amplified laser generates a pulsed optical fundamental beam and a crystal passes the fundamental beam to generate a second harmonic beam of the fundamental beam. A lens focuses the mixed fundamental and second harmonic beams and a gas cell containing water vapor receives the... Agent: Choate, Hall & Stewart LLP

20090074017 - Light outputting device and light scanning unit having the same: A light outputting device includes, a substrate, a vertical cavity surface emitting laser (VCSEL) provided on a surface of the substrate, including a light emitting surface which emits a light, and a monitoring detector provided on the light emitting surface of the VCSEL to receive a part of the light... Agent: Stein, Mcewen & Bui, LLP

20090074018 - Laser driving device: A laser driving device is provided that can support a higher speed and drives a semiconductor laser (3) to emit light in a pulse-like manner in accordance with a digital signal. The laser driving device includes a temperature sensor (5), a recording pulse generator (1), an auxiliary pulse generator (4),... Agent: Wenderoth, Lind & Ponack L.L.P.

20090074019 - Optical injection locking of vcsels for wavelength division multiplexed passive optical networks (wdm-pons): Low cost implementation of broadband upstream transmission for local and access network applications is made possible through the use of modulated downstream signals in a wavelength division multiplexed (WDM) passive optical network (PON) to injection-lock vertical-cavity surface-emitting lasers (VCSELs) for operation as stable, uncooled, and directly-modulated upstream transmitters. By way... Agent: John P. O'banion O'banion & Ritchey LLP

20090074020 - Dbr laser with improved thermal tuning effciency: A distributed Bragg reflector (DBR) includes a base substrate and a gain medium formed on the base substrate. A waveguide positioned above the base substrate in optical communication with the gain medium and defines a gap extending between the base substrate and the waveguide along a substantial portion of the... Agent: Workman Nydegger 1000 Eagle Gate Tower

20090074021 - Operating a pulse laser diode: Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional... Agent: Fish & Richardson PC

20090074022 - Dual-wavelength semiconductor laser device and method for fabricating the same: In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less... Agent: Mcdermott Will & Emery LLP

20090074023 - Broad spectrum light source: The light includes a laser (4), which operates at or near its fundamental wavelength and produces pulses of a duration longer than 0.5 ns, and a micro-structured optical fibre (9) arranged to guide the pulses, wherein the light is generated by the pulses in the fibre (9). The light source... Agent: Buchanan, Ingersoll & Rooney PC

20090074024 - photonic crystal laser: A laser capable of emitting multiple laser beams is provided. A two-dimensional photonic crystal laser according to the present invention has a laminated structure including an active layer, a first photonic crystal layer having a periodic distribution of refractive index with a first period, and a second photonic crystal layer... Agent: Oliff & Berridge, PLC

20090074026 - Structure having photonic crystal and surface-emitting laser: In a structure having a two-dimensional photonic crystal in which structures having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crystal, wherein the structure comprises... Agent: Fitzpatrick Cella Harper & Scinto

20090074025 - Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than... Agent: Dickstein Shapiro LLP

20090067453 - Laser light source and optical device: A laser light source is provided with a pump light source (1) comprising a semiconductor laser, a solid laser medium (2) which is excited by the semiconductor laser, and multi-mode means for changing at least either a longitudinal mode or a transverse mode of laser oscillation of the solid laser.... Agent: Steptoe & Johnson LLP

20090067454 - Power stabilization of semiconductor laser harmonic frequency conversion modules: The invention relates to a fiber laser and harmonic frequency conversion module incorporating a 90 degree Polarization Maintaining (PM) fiber fusion splice therebetween for providing temperature insensitive power stabilization. The present invention has found that incorporating at least one 90 degree splice of the transmission axes of the PM fiber,... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20090067455 - Method and system for a pulsed laser source emitting shaped optical waveforms: A laser system for processing a workpiece includes a tunable pulsed laser source having an output comprising a set of optical pulses. The tunable pulsed laser source includes a seed source, an optical circulator having a first port coupled to the seed source, a second port, and a third port,... Agent: Townsend And Townsend And Crew, LLP

20090067456 - Tunable mode-locked laser: A tunable laser cavity for selectively emitting laser light having a first wavelength and a second wavelength using pump light emitted by a pump light source. The tunable laser cavity includes an optical resonator, the optical resonator having a configuration, optical properties and dimensions such that a first round-trip time... Agent: Louis Tessier

20090067459 - Illumination light source device and laser projection device: An illumination light source is provided with a laser light source having a laser medium with a specified gain region, and a reflector having a narrow band reflection characteristic. A part of a laser light emitted from the laser light source is reflected and fed back by the reflector, so... Agent: Wenderoth, Lind & Ponack L.L.P.

20090067458 - Nonlinear imaging using passive pulse splitters and related technologies: An apparatus includes a pulsed laser source that produces a pulsed laser beam at an input repetition rate and an input pulse power, a passive pulse splitter that receives the pulsed laser beam and outputs a signal including a plurality of sub-pulses for each input pulse of the pulsed laser... Agent: Fish & Richardson P.C.

20090067457 - Ultraviolet laser light source pulse energy control system: A method and apparatus is disclosed which may comprise: a gas discharge laser system energy controller which may comprise: a laser system energy controller providing a first laser operating parameter control signal based on an error signal related to a value of the output energy of the laser system compared... Agent: William C. Cray Cymer, Inc.

20090067460 - Semiconductor optical device with suppressed double injection phenomenon: A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa.... Agent: Smith, Gambrell & Russell

20090067461 - Rotating laser transmitter: The transmitter has a generally flat, circuit board stator, a rotor including a plurality of magnets mounted in a ring around a central opening, and a bearing, supporting the rotor for rotation about an axis that extends through the central opening, A pentaprism assembly including an optics holder is mounted... Agent: Dinsmore & Shohl LLP

20090067462 - Semiconductor device: A semiconductor device includes an InP substrate, an AlGaInAs-based first layer, an AlGaInAs-based second layer, an InGaAsP-based third layer, and an InGaAsP-based fourth layer. The first and second layers have compositions which are same or substantially same as each other on an interface therebetween. The composition of the layer varies... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090067464 - Semiconductor laser device: A semiconductor laser device includes: a laminated body including an active layer, a cladding layer provided on the active layer, and a contact layer provided on the cladding layer, the laminated body having a first and second end face forming a resonator for light emitted from the active layer; and... Agent: Amin, Turocy & Calvin, LLP

20090067463 - Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same: A semiconductor substrate containing a single crystalline group IV semiconductor is provided. A single crystalline lattice mismatched group IV semiconductor alloy layer is epitaxially grown on a portion of the semiconductor layer, while another portion of the semiconductor layer is masked. The composition of the lattice mismatched group IV semiconductor... Agent: Scully, Scott, Murphy & Presser, P.C.

20090067465 - Multiple cavity etched-facet dfb lasers: A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each... Agent: Jones, Tullar & Cooper, P.C.

20090067466 - Semiconductor laser device and method for manufacturing the same: A semiconductor laser device comprising: a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser... Agent: Nixon & Vanderhye, PC

20090067468 - Laser system: A method/apparatus may comprise a laser light source which may comprise a solid state seed laser system producing a seed laser output having a nominal center wavelength at a pulse repetition rate; a first and a second gas discharge laser amplifier gain medium each operating at a pulse repetition rate... Agent: William C. Cray

20090067467 - Pre-ionizer for pulsed gas-discharge laser: In a CO2 laser a pre-ionizer is assembled in a flange configured to be attached to a laser-gas enclosure of the laser over an aperture in a wall of the enclosure. An aperture in the base of the flange is aligned over the aperture in the enclosure wall. The aperture... Agent: Stallman & Pollock LLP

20090067469 - Optical module having a block with feedthrough pins: The present invention provides an optical module with a relatively wider mounting area for the devices with a CAN package. The optical module of the present invention provides the stem and the cap, both of which form a cavity where the devices are to be installed. The stem provides the... Agent: Venable LLP

20090059966 - System and method for transferring much more information in optic fiber cables by significantly increasing the number of fibers per cable: The present invention enables putting much more optic fibers per cable, such as for example even 1,000 or 10,000 times more than the prior art, with an increase in cost that is orders of magnitude smaller. One of the most important variations is using multi-fiber flexible flat jackets that can... Agent: Yaron Mayer

20090059967 - Electro-optic bragg deflector and method of using it as laser q-switch in a q-switched laser and a q-switched wavelength-conversion laser: The configurations of an electro-optic Bragg deflector and the methods of using it as a laser Q-switch in a Q-switched laser and in a Q-switched wavelength-conversion laser are provided. As a first embodiment of the present invention, the electro-optic Bragg deflector comprises an electrode-coated electro-optic material with a spatially modulated... Agent: Volpe And Koenig, P.C.

20090059968 - Injection-seeded monolithic laser: An injection seeding laser system in which the seeded laser has a monolithic structure without any moving parts. The seeder emits light whose wavelength is swept in a radio frequency (RF) over a range that covers one or more longitudinal mode(s) of the seeded laser, which eliminates the need for... Agent: Pavilion Integration Corporation

20090059969 - Laser-beat-wave photocathode electron accelerator and electron radiation apparatus using the same: An electron radiation apparatus is provided. The electron radiation apparatus includes a beat-wave laser system generating a laser beat wave, an electron emitter emitting a density-modulated electron current induced by the laser beat wave, an electron accelerator accelerating the density-modulated electron current and generating a periodically bunched electron beam, and... Agent: Bever Hoffman & Harms, LLP 2099 Gateway Place

20090059971 - Linearized swept laser source for optical coherence analysis system: A frequency swept laser source that generates an optical signal that is tuned over a spectral scan band at single discrete wavelengths associated with longitudinal modes of the swept laser source. Laser hopping over discrete single cavity modes allows long laser coherence length even under dynamic very high speed tuning... Agent: Houston Eliseeva

20090059972 - Method and system for switching of tunable lasers: The invention provides a method and laser system for switching from a current operating point to a new operating point of the laser, the laser operating at a particular wavelength and includes a source channel and destination channel. The system switches and locks the output wavelength of a laser at... Agent: Mcdonnell Boehnen Hulbert & Berghoff LLP

20090059970 - Mode hopping swept frequency laser for fd oct and method of operation: A frequency swept laser source that generates an optical signal that is tuned over a spectral scan band at single discrete wavelengths associated with longitudinal modes of the swept laser source. Laser hopping over discrete single cavity modes allows long laser coherence length even under dynamic very high speed tuning... Agent: Houston Eliseeva

20090059973 - Wavelength tunable light source, control method and control program thereof, and optical module: To improve optical power detection accuracy without increasing size, etc. of a device, when controlling a plurality of light variable parts such that the sum of a plurality of optical powers becomes the minimum. Provided is a wavelength tunable light source for changing the wavelength of light by using a... Agent: Nec Corporation Of America

20090059974 - Frequency-converted high-power laser with recirculating polarization control: A frequency-tripled laser-resonator has three resonator-branches. The branches are optically connected with each other by one or more polarization-selective devices. Unpolarized fundamental radiation is generated by optically pumping a gain-element in one branch of the resonator. The polarization-selective device provides that radiation in the other branches is plane-polarized, with the... Agent: Stallman & Pollock LLP

20090059975 - Laser module for projection displays: A laser module with a linear laser diode array includes multiple, mutually separated laser cells. A nonlinear optical material serves to double the frequency of the radiation emitted by the laser cells. The linear laser diode array and the nonlinear optical material are so positioned relative to each other that... Agent: Pearne & Gordon LLP

20090059976 - Laser module and method for adjusting optical axis of the same: A laser module capable of easy optical axis adjustment between the very small waveguide in a short period of time, and a method for adjusting an optical axis thereof. The laser module includes a laser device LD; an optical waveguide device SHG equipped with a waveguide; lenses L1 and L2... Agent: Sidley Austin LLP

20090059977 - Gain media edge treatment to suppress amplified spontaneous emission in a high power laser: A novel method and apparatus for suppressing ASE and/or parasitic oscillation modes in a laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges to a predetermined electromagnetic absorbing material arranged adjacent to the entire outer... Agent: Llnl/zilka-kotab John H. Lee, Assistant Laboratory Counsel

20090059978 - Laser diode control method, laser diode control device, and information recording/playback apparatus: Even though a laser diode is within the operation guarantee temperature range, the rise time characteristics required to protect and maintain the writing quality right away may not be present at a lower temperature. By sufficiently increasing the rise time, a laser diode control method of the present invention makes... Agent: Townsend And Townsend And Crew, LLP

20090059979 - Optical transmission module and optical transmission system: The present invention provides an optical transmission module and an optical transmission system including a plurality of components including a light-emitting device mounted on a holding unit, capable of restraining a distortion caused by a temperature difference between top and bottom faces of a temperature adjusting unit that performs temperature... Agent: Nec Corporation Of America

20090059980 - High-stability frequency reference based on self-locked alkali-vapor laser: Embodiments of the invention are directed to an atomic-based frequency reference that includes an architecture that eliminates the need for local oscillator components and instead is implemented with a “photonic local oscillator,” that provides for a relatively low power consumption, compact, atomic clock/frequency reference. Such a system is based on... Agent: Patent Docket Administrator Lowenstein Sandler PC

20090059981 - Drive circuit for semiconductor light emitting element, and light source device, lighting device, monitor device, and image display device using the drive circuit: A drive circuit for driving a semiconductor light emitting element includes a board, a first pattern formed in a first layer of the board so as to be electrically connected to an anode of the semiconductor light emitting element, and a second pattern formed in a second layer of the... Agent: Oliff & Berridge, PLC

20090059982 - Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment... Agent: Hewlett Packard Company

20090059983 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing... Agent: Mcdermott Will & Emery LLP

20090059984 - Nitride-based semiconductor light-emitting device: A nitride-based semiconductor light-emitting device includes at least one n-type nitride-based semiconductor layer, an active layer having a quantum well structure, and at least one p-type nitride-based semiconductor layer successively stacked on a substrate, the active layer including an InGaN well layer and a barrier layer containing at least one... Agent: Harness, Dickey & Pierce, P.L.C

20090059985 - El semiconductor device: An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type... Agent: Antonelli, Terry, Stout & Kraus, LLP

20090059986 - Semiconductor light emitting element: A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20090059987 - Monolithic opto-isolators: Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an... Agent: Workman Nydegger 1000 Eagle Gate Tower

20090059988 - Semiconductor laser and semiconductor optical integrated device: A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20090059989 - Optoelectronic circuit with a photoreceptor and a laser diode, and module comprising the same: The optoelectronic circuit includes a photoreceptor (1) made in a silicon semiconductor substrate (4), and a monomode VCSEL laser diode (2) made in particular in a gallium arsenide substrate. The photoreceptor includes at least one photosensitive area with a pixel array for picking up light and an area with a... Agent: Griffin & Szipl, PC

20090059990 - External cavity semiconductor laser: An external cavity semiconductor laser is provided with a first input-output section 2a and a second input-output section 2b that are disposed on a common end surface 2 via a center axis 3. The external cavity semiconductor laser includes: a semiconductor laser device 1 capable of emitting a first laser... Agent: Merchant & Gould PC

20090059991 - Re-entrant structure for thin disk resonators: The present embodiment provides a system and method for lowering the saturated gain level of a thin-disk laser oscillator by multipassing each gain generator in such a way to cancel some of the wavefront error contributions from the disk surfaces. Wavefront aberrations introduced on one pass of the gain disk... Agent: Sawyer Law Group, LLP

20090059992 - Light source device, image display device, and monitor device: A light source device includes a plurality of light emitting elements for emitting light beams, a resonant mirror functioning as a resonator for selectively reflecting the light beams emitted respectively from the light emitting elements, towards the light emitting elements, a wavelength selection element disposed on light paths between the... Agent: Oliff & Berridge, PLC

20090059993 - Mono-slab laser cavity: A YAG/Nd:YAG block where an Nd:YAG block ends in a peak integrated inside a YAG block. The YAG block has reflective surfaces positioned at 45° to one another. The angled reflective surfaces serve as a “mirror” within the laser cavity to effectively increase the length of the cavity by a... Agent: Department Of The Army Cecom Legal Office, Fort Belvoir

20090059994 - Laser system for medical and cosmetic applications: A laser system for medical and cosmetic applications has an optical delivery system for guiding a laser beam to a target surface, wherein the optical delivery system has an external optical element facing toward the target surface. A mechanical filter in the form of a protective screen for shielding the... Agent: Gudrun E. Huckett Draudt