|Coherent light generators patents - Monitor Patents|
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Coherent light generators January recently filed with US Patent Office 01/09Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 01/29/2009 > patent applications in patent subcategories. recently filed with US Patent Office
20090028193 - Broadband or mid-infrared fiber light sources: A broadband light source includes one or more laser diodes that are capable of generating a pump signal having a wavelength shorter than 2.5 microns, a pulse width of at least 100 picoseconds and a pump optical spectral width. The light source also includes one or more optical amplifiers that... Agent: Baker Botts L.L.P.
20090028194 - Tunable laser: A mode hop-free tunable laser including a gain medium, a microfabricated blazed grating, defining an external cavity of a given length, the blazed grating lying in a general plane and including a plurality of elongate beams carrying mutually parallel respective reflection surfaces spaced apart from one another with a predefined... Agent: Young & Thompson
20090028195 - System and method for frequency conversion of coherent light: A system and method is disclosed for converting a frequency of a coherent light source. A birefringent nonlinear material is cut at an angle for critical phase matching to form a rectangular parallelepiped biased nonlinear crystal. The nonlinear crystal cut at a biased angle can be placed at an angle... Agent: Thorpe North & Western, LLP.
20090028196 - Continuous form electrophotographic apparatus and write-start position control method thereof: A disclosed continuous form electrophotographic apparatus for forming an output image on a photoconductor surface by scanning the photoconductor surface with a laser beam irradiated from a laser light source and outputting the output image on a continuous form, includes a laser beam position detecting unit configured to output a... Agent: Ladas & Parry LLP
20090028197 - Fixed wavelength mid infrared laser source with an external cavity: A MIR laser source that produces a fixed frequency output beam that is within the MIR range includes a QC gain media, and a wavelength dependent (“WD') feedback assembly that is spaced apart from the QC gain media and that cooperates with the QC gain media to form an external... Agent: Roeder & Broder LLP
20090028198 - Beaconless adaptive optics system: An improved beaconless adaptive optics system and process. A target is illuminated with a high energy laser beam of a directed energy laser. Wave front measurements are made of high energy laser beam reflections from the target. These wave front measurements are analyzed by a high speed processor to determine... Agent: Trex Enterprises Corp.
20090028199 - Laser projection temperature compensation: The temperature of a laser diode changes in response to video content across a line of a displayed image, and the radiance changes as a function of temperature. An adaptive model estimates the temperature of the laser diode based on prior drive current values. For each displayed pixel, diode drive... Agent: Microvision, Inc.
20090028200 - Laser diode drive circuit, electronic circuit, method for controlling laser diode drive circuit, and method for controlling duty: A laser diode drive circuit includes: a duty control amplifier (23) that controls the duty ratio of a main signal for laser control in accordance with a duty control signal; and an AND gate (22) that outputs the duty control signal to the duty control amplifier (23), and outputs a... Agent: Westerman, Hattori, Daniels & Adrian, LLP
20090028201 - Optical communication system and optical transmitter: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15≦x≦0.35), the first... Agent: Young & Thompson
20090028202 - Nitride light emitting device and manufacturing method thereof: A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.... Agent: Birch Stewart Kolasch & Birch
20090028203 - Optical semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposite of the first conductivity type, includes the... Agent: Westerman, Hattori, Daniels & Adrian, LLP
20090028204 - Semiconductor laser device: A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is... Agent: Ditthavong Mori & Steiner, P.C.
20090028205 - Dispersion compensator, solid-state laser apparatus using the same, and dispersion compensation method: A dispersion compensator which is compact, low loss, low cost, and highly stable, and yet capable of varying the dispersion compensation amount without changing the output position of an output beam. The dispersion compensator includes: a first and a second planar mirrors disposed parallel to each other, wherein at least... Agent: Sughrue Mion, PLLC
20090028207 - Mobile charge induced periodic poling and device: Devices and methods are disclosed for realizing a high quality bulk domain grating structure utilizing mobile charges that are generated by means of photo-excitation in a substrate. An effect of light exposure (UV, visible, or a combination of wavelengths) is to generate photo-induced charges. The application of a voltage across... Agent: Heller Ehrman LLP01/22/2009 > patent applications in patent subcategories. recently filed with US Patent Office
20090022181 - Optical spectral filtering and dispersion control for wavelength multiplexed laser sources using fiber bragg gratings: The embodiments of the invention provide an apparatus for optical spectral filtering and dispersion control for wavelength multiplexed laser sources using fiber Bragg gratings. More specifically, the apparatus includes a laser diode having a first end and a second end opposite the first end. The first end of the laser... Agent: Frederick W. Gibb, Iii Gibb Intellectual Property Law Firm, Llc
20090022182 - Conversion efficiency expansion in wavelength converting optical packages: Particular embodiments of the present invention relate generally to altering the effective conversion efficiency curve of an optical package employing a semiconductor laser and an SHG crystal or other type of wavelength conversion device. For example, according to one embodiment of the present invention, a method of controlling an optical... Agent: Corning Incorporated
20090022183 - Intensity modulation in wavelength converting optical package: Particular embodiments of the present invention relate generally to methods of controlling an optical package comprising a semiconductor laser, a spectral filter, and a wavelength conversion device. The spectral filter and the wavelength conversion device collectively define a wavelength transfer function comprising a transmission bandwidth component attributable to the spectral... Agent: Corning Incorporated
20090022185 - Method of controlling semiconductor laser: A method of controlling a semiconductor laser having a wavelength selection portion, a refractive index of the wavelength selection portion being controllable with a heater including: a starting sequence including a first step for adjusting a heat value of the heater until the heat value of the heater reaches a... Agent: Westerman, Hattori, Daniels & Adrian, LLP
20090022186 - Method of controlling semiconductor laser: A method of controlling a semiconductor laser that has a plurality of wavelength selection portions having a different wavelength property from each other and is mounted on a temperature control device, including: a first step of correcting a temperature of the temperature control device according to a detected output wavelength... Agent: Westerman, Hattori, Daniels & Adrian, LLP
20090022184 - Wavelength tunable light source of external resonator type: An improvement is made to a wavelength tunable light source of an external resonator type for selecting a wavelength of light from a semiconductor laser using a diffraction grating. The device has a prism provided between the semiconductor laser and the diffraction grating for enlarging the beam shape of the... Agent: Sughrue-265550
20090022187 - Laser module: A laser module including at least one light-emitting unit, a filter and a poled nonlinear optical crystal is provided. The light-emitting unit provides an incoherent beam. The filter is disposed on the transmission path of the incoherent beam and reflects at least a part of the incoherent beam. The poled... Agent: J C Patents, Inc.
20090022188 - Frequency modulation in the optical alignment of wavelength-converted laser sources: Methods of controlling semiconductor lasers are provided where the semiconductor laser generates a wavelength-modulated output beam λMOD that is directed towards the input face of a wavelength conversion device. The intensity of a wavelength-converted output λCONV of the device is monitored as the output beam of the laser is modulated... Agent: Corning Incorporated
20090022189 - Light source apparatus: The present invention relates to a light source apparatus that has a base structure capable of generating SC light and further having a structure that enables the shaping of the spectral waveform of the SC light, power adjustment of the SC light, or adjustment of the frequency of repetition of... Agent: Mcdermott Will & Emery LLP
20090022190 - Heat capacity laser and associated lasing medium: A heat capacity laser having a solid lasing medium, at least one pumping source that is able to emit a pumping radiation, and an optical cavity that can be characterized by having: at least one device able to homogenize the pumping radiation, a doped lasing medium having a body with... Agent: Oliff & Berridge, Plc
20090022191 - Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element: A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the island layer, and an auxiliary groove provided along an end... Agent: Global Ip Counselors, LLP
20090022192 - Laser device and lasing method: A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (11) in which the semiconductor quantum dot is formed; a resonator (14) for resonating light generated in the laser member (11); and a pump laser (15) for irradiating the laser... Agent: Nixon & Vanderhye, Pc
20090022193 - Nitride semiconductor device and method for manufacturing same: An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode... Agent: Mark D. Saralino (pan) Renner, Otto, Boisselle & Sklar, LLP
20090022195 - Semiconductor laser: A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or... Agent: Leydig Voit & Mayer, Ltd
20090022194 - Semiconductor laser device and semiconductor laser device array: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total... Agent: Drinker Biddle & Reath (dc)
20090022196 - High efficiency intersubband semiconductor lasers: An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax... Agent: Wisconsin Alumni Research Foundation (warf)
20090022197 - Semiconductor light-emitting device and manufacturing method thereof: Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor... Agent: Leydig Voit & Mayer, Ltd
20090022198 - Package structure of compound semiconductor device and fabricating method thereof: A package structure of a compound semiconductor device comprises a thin conductive film with a pattern, a die, at least one metal wire or metal bump and a transparent encapsulation material. The die is mounted on the first surface of the thin conductive film, and is electrically connected to the... Agent: Wpat, Pc Intellectual Property Attorneys
20090022199 - Surface light emitting laser element, surface light emitting laser array provided with it, electro-photographic system and optical communication system: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.
20090022200 - Supersonic diffuser: A pressure-recovery device for a supersonic, continuous wave gas laser is capable of recovering the pressure of the supersonic fluid in an efficient manner and in a relatively light and compact assembly. The supersonic diffuser has a substantially rectangular inlet and top and bottom walls that extend from the inlet... Agent: Storm LLP
20090022201 - Alkali-vapor laser with transverse pumping: Alkali-vapor laser and related methods of lasing are described herein. In some embodiments, a diode-pumped gas-vapor laser is provided that can be scaled to high power. For example, in one embodiment, a triply-transverse configuration of a diode-pumped-alkali-laser (DPAL) is disclosed in which alkali-buffer gain medium is flowed through an laser... Agent: Fitch Even Tabin And Flannery01/15/2009 > patent applications in patent subcategories. recently filed with US Patent Office
20090016385 - Passive q switch laser device: A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair... Agent: Drinker Biddle & Reath (dc)
20090016386 - Quantum entanglement photon-pair producing device and quantum entanglement photon pair producing method: In one embodiment of the present invention, a quantum entangled photon-pair producing device is disclosed which includes a superposed state generating device for generating a superposed state of photon-pairs entering through N (N≧2) different incident optical paths and being composed of photons having different polarization directions, and a light-guide device... Agent: Harness, Dickey & Pierce, P.L.C
20090016387 - Apparatus for providing optical radiation: In one embodiment, a photo-darkening resistant optical fibre includes a waveguide having a numerical aperture less than 0.15. The waveguide includes a core having a refractive index n1 and a pedestal having a refractive index n2, and wherein the fibre includes a first cladding having a refractive index n3 surrounding... Agent: John S. Reid
20090016388 - Laser processing of conductive links: A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the... Agent: Knobbe Martens Olson & Bear LLP
20090016389 - Laser drive circuit and method providing high limit clipping corresponding to low limit clipping in a laser: A laser drive circuit may be used to induce high limit clipping corresponding to natural low limit clipping in a laser, such as a laser diode, to reduce even order distortion such as composite second order (CSO) distortion. A drive current input may be provided to the active region of... Agent: Applied Optoelectronics, Inc.
20090016390 - Light source device, image display apparatus, and monitor apparatus: A light source device includes plural light-emitting elements that emit lights, a wavelength selection element that has plural light selection areas in which wavelength selection is performed for the lights emitted from the plural light-emitting elements, respectively, and selectively reflects a part of the lights emitted from the plural light-emitting... Agent: Oliff & Berridge, PLC
20090016391 - Header assembly for extended temperature optical transmitter: A header assembly for extended temperature optical transmitters is disclosed. The header assembly may include a hermetic enclosure and a header base with an interior surface. A plurality of conductive leads penetrate from the outer portion of the header assembly to the interior surface. A thermoelectric cooler (“TEC”) having a... Agent: Workman Nydegger 1000 Eagle Gate Tower
20090016393 - Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device: It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as... Agent: Nixon Peabody, LLP
20090016394 - Laser diode driving device and optical scanning device: A laser diode driving device capable of obtaining a stable pulse emission state even when variation in the current-light amount characteristic of a laser diode thereof is caused by environmental changes. A photodiode detects the amount of light emitted from the laser diode. A laser controller determines the amount of... Agent: Rossi, Kimms & Mcdowell LLP.
20090016392 - Laser driver automatic power control circuit using non-linear impedance circuit: A laser driver circuit includes a laser APC circuit receiving a monitor current indicative of the average optical output power of a laser diode and providing a bias adjust signal for adjusting a bias current for the laser diode. The laser APC circuit includes a first non-linear impedance circuit receiving... Agent: Patent Law Group LLP
20090016395 - Two-dimensional photonic crystal surface-emitting laser: Two-dimensional photonic crystal surface-emitting laser comprising a two-dimensional photonic crystal, having media different in refractive index arrayed in a two-dimensional cycle, disposed in the vicinity of an active layer that emits light by the injection of carriers, wherein the two-dimensional photonic crystal consists of square lattices having equal lattice constants... Agent: Sidley Austin LLP
20090016396 - Structure of high power edge emission laser diode: A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will... Agent: Rosenberg, Klein & Lee
20090016397 - Nitride semiconductor light emitting device and method for manufacturing the same: A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad... Agent: Stanley P. Fisher Reed Smith LLP
20090016398 - Carrier for a vertical arrangement of laser diodes with a stop: A laser radiation source which is scalable with respect to output is designed in such a way that laser diode elements can be arranged on a carrier so as to be stacked equidistantly and with low stress at a low manufacturing cost. The laser radiation source comprises a vertical stack... Agent: Reed Smith, LLP Attn: Patent Records Department
20090016399 - Hybrid silicon evanescent photodetectors: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region,... Agent: Gates & Cooper LLP Howard Hughes Center
20090016400 - Multi-beam laser apparatus: There is provided a multi-beam laser apparatus including: a laser beam source generating a beam; an incident lens disposed on a path of the beam; a beam splitter splitting the beam incident on the incident lens into a plurality of beamlets; and a beam path adjustor disposed on each of... Agent: Mcdermott Will & Emery LLP01/08/2009 > patent applications in patent subcategories. recently filed with US Patent Office
20090010285 - Articulated robot for laser ultrasonic inspection: An ultrasonic non-destructive evaluation (NDE) system operable to inspect target materials is provided. This ultrasonic NDE system includes an articulated robot, an ultrasound inspection head, a processing module, and a control module. The ultrasound inspection head couples to or mounts on the articulated robot. The ultrasound inspection head is operable... Agent: Bracewell & Giuliani LLP
20090010287 - Automatic dispersion compensation in amplification for short pulse fiber laser system: A fiber Chirped Pulse Amplification (CPA) laser system includes a fiber mode-locking oscillator for generating a laser for projecting to a fiber stretcher for stretching a pulse width of the laser wherein the stretcher further comprising a Photonic Bandgap (PBG) fiber having a lower nonlinearity and an abnormal dispersion than... Agent: Xin Wen
20090010286 - Glass for optical amplifier fiber: A germanate glass composition suitable for use in a fiber amplifier for broadband amplification of optical signals is provided. The glass preferably includes 35-75% GeO2, 0-45% PbO, 5-20% BaO, 5-20% ZnO, and 2-10% R2O (R=Na, Li, K). It is doped with thulium ions (Tm3+) and codoped with holmium ions (Ho3+).... Agent: Nixon & Vanderhye, PC
20090010288 - Fiber mopa system without stimulated brillouin scattering: Methods and systems for increasing the threshold for stimulated Brillouin scattering are described. A seed source may generate one or more chirped seed pulses characterized by a pulse duration τ, and a frequency chirp. The pulse duration τ may be greater than about 2 nanoseconds. A photonic crystal amplifier amplifies... Agent: Joshua D. Isenberg Jdi Patent
20090010289 - Laser circuit substrate: This invention makes it possible to meet a requirement of high-quality image printing and high-speed driving of a semiconductor laser driver in a laser beam printer or the like while suppressing radiant noise. A laser circuit substrate includes a first wiring pattern and second wiring pattern connected to a main... Agent: Morgan & Finnegan, L.L.P.
20090010291 - Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (zn) atoms: A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing... Agent: Smith, Gambrell & Russell
20090010290 - Semiconductor chip and method for producing a semiconductor chip: A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material component (B) within the first and the second interlayer (19, 20) changes... Agent: Cohen, Pontani, Lieberman & Pavane LLP
20090010292 - Nitride-based semiconductor laser device: A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer,... Agent: Mcdermott Will & Emery LLP
20090010293 - Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device: A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN... Agent: Harness, Dickey & Pierce, P.L.C
20090010294 - Nitride semiconductor laser element: A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face... Agent: GlobalIPCounselors, LLP
20090010295 - Distributed feedback semiconductor laser based on reconstruction-equivalent-chirp technology and the manufacture method of the same: Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg grating in the said DFB semiconductor laser cavity is a sampled Bragg grating, in which there is an equivalent grating corresponding to the original ordinary DFB grating as... Agent: GlobalIPServices
20090010297 - Vertical cavity surface emitting laser array and method for manufacturing, and image forming apparatus using vertical cavity surface emitting laser array: A vertical cavity surface emitting laser array is disclosed which allows wires for individually driving devices arrayed at a small pitch to be provided on the laser array with ease and with a high degree of freedom is provided. The vertical cavity surface emitting laser array includes a first substrate... Agent: Fitzpatrick Cella Harper & Scinto
20090010296 - Optical transceiver module and method for manufacturing same: An optical transceiver module and a method for manufacturing thereof, which are adopted for providing a reduced manufacturing cost and an improved signal quality, are achieved. The optical transceiver module 1 includes a VCSEL 13 that is capable of emitting light; a thermoplastic resin layer 22 provided on the VCSEL... Agent: Mcginn Intellectual Property Law Group, PLLC
20090010298 - Two-dimensional photonic crystal surface-emitting laser: A two-dimensional photonic crystal formed by arranging in a lattice pattern a medium having a refractive index different from that of a medium layer formed near an active layer. The two-dimensional photonic crystal includes a distributed-feedback control photonic crystal in which a light propagating through the active layer as a... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.01/01/2009 > patent applications in patent subcategories. recently filed with US Patent Office
20090003390 - Optimal colors for a laser pico-beamer: A laser beam projector employs a light engine including a semiconductor laser platform (20) emitting a plurality of infrared laser beams and a frequency converter (30) emitting a plurality of primary color laser beams as a frequency conversion of the plurality of infrared laser beams, wherein each primary color laser... Agent: Philips Intellectual Property & Standards
20090003391 - Low-repetition-rate ring-cavity passively mode-locked fiber laser: A ring-cavity, passively mode locked fiber laser capable of producing short-pulse-width optical pulses at a relatively low repetition rate. The fiber laser uses a one-way ring-cavity geometry with a chirped fiber Bragg grating (CFBG) at its reflecting member. The CFBG is part of a dispersion compensator that includes an optical... Agent: Corning Incorporated
20090003392 - Multiple pulsed-laser system for silicon crystallization: Multiple laser resonators share a common acousto-optic Q-switch. The Q-switch is driven by a radio-frequency (RF) transducer that causes an acoustic wave to propagate in the Q-switch. Turning off the RF transducer discontinues propagation of the acoustic wave and causes each of the laser resonators to deliver an optical pulse.... Agent: Stallman & Pollock LLP
20090003393 - Solid-state laser device with a crystal array: In a laser device, a crystal array includes a laser gain crystal and an optically non-linear frequency conversion crystal. A pump source couples at least two mutually spatially separated pump beams into the crystal array. Between two pump beams, a saw kerf of the crystal array extends parallel to the... Agent: Fish & Richardson PC
20090003395 - Method and system for a pulsed laser source emitting shaped optical waveforms: A tunable pulsed laser source includes a seed source adapted to generate a seed signal and an optical circulator having a first port coupled to the seed source, a second port, and a third port. The tunable pulsed laser source also includes a modulator driver adapted to produce a shaped... Agent: Townsend And Townsend And Crew, LLP
20090003394 - Optical pulse amplifier and optical pulse source: The pulse light source according to the present invention comprises: a seed pulse generator 1 for outputting an input pulse 10 as a seed pulse; a pulse amplifier 2; and a dispersion compensator 3 for dispersion compensating a light pulse output from the pulse amplifier 2. Moreover, the pulse amplifier... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.
20090003396 - Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same: A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure... Agent: Kathy Manke Avago Technologies Limited
20090003397 - Optical device, and semiconductor laser oscillator: In an optical device, a slab layer includes an active layer sandwiched between cladding layers. The slab layer has a periodic refractive index profile structure in a two-dimensional plane, as a two-dimensional slab photonic crystal structure, and a linear defect region serving as a waveguide in the periodic refractive index... Agent: Leydig Voit & Mayer, Ltd
20090003398 - Light-transmitting module capable of responding a high-frequency over 10ghz: The laser diode of the present invention is mounted on the heat sink made of insulating material such as aluminum nitride (AlN). On the heat sink, a metal film, evaporated gold film, is provided and the laser diode is mounted on the heat sink such that the anode electrode of... Agent: Smith, Gambrell & Russell
20090003399 - Integrated circuit employing low loss spot-size converter: An integrated circuit is provided with a photonic device and a spot-size converter waveguide device integrated on a common substrate. The spot-size converter waveguide device provides for transformation between a larger spot-size and a smaller spot-size corresponding to the photonic device. The spot-size converter waveguide device includes at least one... Agent: Gordon & Jacobson, P.C.
20090003401 - Surface emitting laser and method of manufacturing the same: Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to... Agent: Fitzpatrick Cella Harper & Scinto
20090003400 - Light-emitting device: In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body... Agent: Nixon & Vanderhye, PC
20090003402 - Semiconductor-laser pumped ti:sapphire laser: A laser includes a Ti:sapphire gain-element that is optically pumped by radiation from a semiconductor laser device. In one example the semiconductor laser device is an InGaN diode-laser array and the gain-element is optically pumped by radiation emitted by that array. In another example, the semiconductor laser device is an... Agent: Stallman & Pollock LLP
20090003403 - Wavelength tunable ring-resonator: A ring laser arrangement adapted for providing an optical beam travelling on an optical path representing a closed loop, includes a laser gain medium coupled into the optical path for amplifying the optical beam by stimulated emission, and a wavelength filter coupled into the optical path for providing a wavelength... Agent: Agilent Technologies Inc.
20090003404 - Semiconductor laser element and method for producing same: A semiconductor laser element realizes a high COD light output in broader range of reflection factor at a facet with high reliability. A semiconductor laser element has a multi-layered reflection film formed on at least one end facet of a resonator. An optical path length of each layer of said... Agent: Mcginn Intellectual Property Law Group, PLLCPrevious industry: Multiplex communications
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