Coherent light generators inventions 12/08

20080317071 - Dual-single-frequency fiber laser and method: An embodiment of the invention is directed to a dual-single-frequency fiber laser. A linear cavity formed by a short length of highly doped optical waveguide with distributed Bragg reflectors (DBRs) at respective ends, one of which is a polarization-maintaining PM-DBR, and a suitable pump source, provides orthogonally polarized dual-single-frequency laser... Agent: Bond, Schoeneck & King, PLLC

20080317072 - Compact solid-state laser: A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as... Agent: Dickinson Wright PLLC

20080317073 - Mode-locked laser device: A mode-locked laser device includes a Fabry-Perot resonator, a mode-locking element disposed within the resonator, a solid-state laser medium disposed within the resonator, and exciting means for applying excitation light to the solid-state laser medium. The opposite ends of the resonator, the mode-locking element and the solid-state laser medium are... Agent: Sughrue Mion, PLLC

20080317074 - Mode-locked laser device: A mode-locked laser device includes a Fabry-Perot resonator, a mode-locking element disposed within the resonator, a solid-state laser medium disposed within the resonator, and exciting means for applying excitation light to the solid-state laser medium. The opposite ends of the resonator, the mode-locking element and the solid-state laser medium are... Agent: Sughrue Mion, PLLC

20080317076 - Controlling output wavelength of a light source: A light source module including: an LD element outputting a laser light; a lens receiving the laser light and outputting a focused light; an optical filter having transmission wavelength characteristics, inputting the focused light, and outputting a transmitted light and a reflected light based on the transmission wavelength characteristics, a... Agent: Staas & Halsey LLP

20080317075 - Determining and setting the frequency modulation index of a laser in a cpt frequency standard: A technique for determining the modulation index of a frequency-modulated laser source from the absorption spectrum that is produced when light from the laser passes through an alkali metal vapor cell. The absorption spectrum contains a primary minimum and a number of satellite minima and the modulation index is determined... Agent: Gordon E Nelson

20080317077 - Device and method for laser safe operation: A laser system (100) produces at least one laser beam (204) that is output from the laser system. The laser system includes a safety device (124) that terminates the output of the laser beam from the laser system. The termination occurs upon the laser beam interacting with a predetermined reflective... Agent: Philips Intellectual Property & Standards

20080317078 - Green laser module package: A green laser module package is disclosed. A green laser module package which generates a laser in a wavelength range of green visible lights comprising: a stem located on a basal surface of the green laser module package; a pumping light source that generates a pumping light; a laser medium... Agent: Christensen, O'connor, Johnson, Kindness, PLLC

20080317079 - Drive circuit and drive method for semiconductor light source: a circuit for driving a semiconductor laser including a semiconductor integrated circuit, which controls the drive of the semiconductor laser, and is connected to one end of the semiconductor laser. Moreover, the driving circuit incorporates a first power source +Vcc that supplies by way of the semiconductor integrated circuit a... Agent: Fitzpatrick Cella Harper & Scinto

20080317080 - Semiconductor laser device: In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of... Agent: Ditthavong Mori & Steiner, P.C.

20080317081 - Surface emitting type optical semiconductor device: It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction... Agent: Amin, Turocy & Calvin, LLP

20080317082 - Laser diode array, optical scannning device and printing apparatus: According to an aspect of the present invention, there is provided a laser diode array including: a laser array chip including: a substrate; and at least three of laser diodes that are formed on the substrate; first electrodes that are formed on each of the laser diodes so as to... Agent: Mcginn Intellectual Property Law Group, PLLC

20080317083 - Diode pump: This invention relates to a novel diode pump and a method of manufacturing the same. An optical laser pulse beam expander, through which a laser beam is guided forward, is integrated as a part of the diode pump according to the invention. The light bars of the diode pump are... Agent: Birch Stewart Kolasch & Birch

20080317084 - Laser interferometer mirror assembly: A laser interferometer mirror assembly (1) comprises a glass base (2) and first and second orthogonal glass mirror blocks (3, 4) each mirror block being supported on an upper surface (5) of the glass base using a pair of feet (6, 7, 8, 9).... Agent: Ware Fressola Van Der Sluys & Adolphson, LLP

20080310462 - Anamorphotic solid-sate laser: A laser system, which is used in material processing to produce a radiation line of small width and uniform high intensity in the longitudinal direction, produces radiation that has different mode numbers M2 perpendicular to the propagation direction.... Agent: Straub & Pokotylo

20080310463 - Tunable lasers locked to whispering gallery mode resonators: Techniques and devices that stabilize a laser to a whispering gallery mode optical resonator.... Agent: Fish & Richardson, PC

20080310466 - Apparatus and method of generating laser beam: A laser beam generating apparatus includes a semiconductor element and a second harmonic generating element that performs a wavelength conversion on fundamental light emitted from the semiconductor element, the laser beam generating apparatus is an external resonance-type laser diode that has an external resonator structure and emits a transversal single... Agent: Merchant & Gould PC

20080310464 - Device for generating and modulating a high-frequency signal: A device and method involving a plurality of lasers for generating and modulating a tunable, high-frequency signal for a wireless communication system, including an optical waveguide, may be produced using standard components of optical communication technology. A signal source may be provided which generates an optical signal and is disposed... Agent: Kenyon & Kenyon LLP

20080310465 - Method and laser device for stabilized frequency doubling: A system and method for emitting a plurality of second harmonic light frequencies that is generally unaffected by small variations in external cavity length and temperature. An illustrative embodiment provides a laser system that comprises a semiconductor gain region operating within the coherence collapse regime, an intra-cavity nonlinear optical medium,... Agent: Slater & Matsil, L.L.P.

20080310467 - Semiconductor light emitting devices and methods: A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling... Agent: Martin Novack

20080310468 - Laser diode control method, laser diode control device, and camcorder: A laser diode is controlled such that a writing operation can be performed readily even at a low temperature and equal to or below the operation guarantee temperature range of the laser diode. A laser diode control device includes a temperature sensor for detecting temperature of a laser diode. If... Agent: Townsend And Townsend And Crew, LLP

20080310469 - Laser device formed by a stack of laser diodes: The laser device (22) is formed by a stack of laser diodes (4) arranged on plates (6) formed of a material that is electrically conductive and a good heat conductor. In order to obtain a high level of heat evacuation efficiency towards the cooling body (10) and to prevent electric... Agent: Griffin & Szipl, PC

20080310470 - Broadband semiconductor laser: A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.... Agent: Ratnerprestia

20080310471 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and... Agent: Mots Law, PLLC

20080310472 - Laser diode chip and its production method: A laser diode chip that yields high irradiance and radiant efficiency, and that emits light having a broad wavelength width and can be used as an element in a light source for an illumination device, and its production method. The laser diode chip has at least a first clad layer,... Agent: Roberts Mlotkowski Safran & Cole, P.C. Intellectual Property Department

20080310473 - Semiconductor laser: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches... Agent: Leydig Voit & Mayer, Ltd

20080310474 - Square micro-cavity laser with an output waveguide: A square micro-cavity laser with an output waveguide comprises: a substrate; a resonator, which has a square shape and is fabricated on the substrate; a stripe output waveguide, which is fabricated on the substrate and is connected to the midpoint of one side face of the resonator; wherein the area... Agent: Westman Champlin & Kelly, P.A.

20080310475 - Laser device having thermal lens astigmatism compensation devices and methods of use: The present application is directed to various embodiments of laser devices having at least one thermal lens astigmatism compensation device and methods of use and includes at least one pump source configured to irradiate at least one pump signal, a first gain device is communication with the pump source and... Agent: Newport Corporation

20080304522 - Catalyst laser: Provided is a laser based on the formation of an inverted population in an atom or ion of an element wherein at least one oxidation state of the element serves as a catalyst with atomic hydrogen to form states that are lower in energy than that of the n=1 state... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20080304523 - Method of increasing the contrast of a high-intensity laser: In the improved method for increasing the contrast of a high-intensity laser, signal light outputted from a laser oscillator, a preamplifier or the like is amplified by OPCPA which is excited by pump light having a short pulse width comparable to that of the signal light, thereby producing an extremely... Agent: Staas & Halsey LLP

20080304524 - Quantum cascade laser suitable for portable applications: A highly portable, high-powered infrared laser source is produced by intermittent operation of a quantum cascade laser power regulated to a predetermined operating range that permits passive cooling. The regulation process may boost battery voltage allowing the use of more compact, low-voltage batteries.... Agent: Roeder & Broder LLP

20080304525 - Method for internal laser marking in transparent materials and device for implementing said method: The invention concerns a method for internal laser marking in transparent materials, for example for marking an identifier (5) for an object made of transparent material (6). The invention is characterized in that a diode-pumped femtosecond laser source (1) is used for non-aggressive high-contrast marking to generate laser pulses (13)... Agent: Bacon & Thomas, PLLC

20080304526 - Green laser optical package: A green laser optical package includes a laser light source generating light of an infrared wavelength band, a harmonic wave generator converting an infrared light output from the laser light source into a second harmonic wave so as to output the converted second harmonic wave, and at least one support... Agent: Cha & Reiter, LLC

20080304527 - Controlling a bias current for an optical source: In one embodiment, the present invention includes an apparatus having a current mirror with a current source coupled to a first terminal and an output current to flow from an output terminal, a laser coupled to the output terminal to be biased by the output current, and a comparator to... Agent: Trop Pruner & Hu, PC

20080304528 - Nitride semiconductor laser device and fabrication method thereof: In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at... Agent: Harness, Dickey & Pierce, P.L.C

20080304529 - Semiconductor laser device: A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs.... Agent: Leydig Voit & Mayer, Ltd

20080304530 - Nitride semiconductor laser element: A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of... Agent: GlobalIPCounselors, LLP

20080304531 - Integrated broadband quantum cascade laser: A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting... Agent: Seth Z. Kalson C/o Intollevate

20080304532 - Surface emitting laser, surface emitting laser array, and image forming apparatus using surface emitting laser array: Provided is a surface emitting laser in which a reflector material is not limited, a film thickness of the reflector is uniform, and a single lateral mode operation can be performed at high light output power. The surface emitting laser includes a resonator including a first refractive index region located... Agent: Fitzpatrick Cella Harper & Scinto

20080304533 - Startup method for gas laser unit and gas laser unit having startup function: A startup method capable of easily and inexpensively activating a laser oscillator by limiting an output current of a high-frequency power supply, without using a particular element or a complicated system, even when the laser oscillator is activated in a low-temperature environment, and a gas laser unit having such a... Agent: Drinker Biddle & Reath (dc)

20080304534 - Power scaleable thin disk lasers: A thin disk laser includes a thin disk of a host material incorporating a laser gain medium. The disk has opposite first and second surfaces, at least one of which is non-planar. The first surface is coated with a high reflectivity coating. The second surface has an anti-reflection coating thereon.... Agent: Macpherson Kwok Chen & Heid, LLP

20080304535 - Mirror structure and laser device comprising such a mirror structure: For increasing the power emitted by surface emitting lasers and for improving the spatial coherence of the laser beam, emitted in particular by disk lasers, microchip lasers and VCSELs having a relatively wide emitting area, the invention proposes to select a low order transverse cavity mode by means of a... Agent: Griffin & Szipl, PC

20080304536 - High intensity laser or diode-based lighting apparatus having integrated optics: A high intensity lighting apparatus (400) includes an outer housing (402); a curved support disk (414) having an array of diode or laser-based integrated light source (410) attached thereto disposed within the housing. Each of the light source (110) includes a tube (112) having a laser or diode chip (111)... Agent: Akerman Senterfitt

20080298401 - Device and method for creating a spatial dose distribution in a medium volume: A device and a method for creating a spatial dose distribution in a medium volume (22) are described. A laser system produces laser pulses (12) with a pulse length shorter than 200 fs (femtoseconds) and is capable to be focused to peak intensities greater than 10̂18 W/cm̂2 (watts per centimeter... Agent: Adeli & Tollen, LLP

20080298402 - Thermally controlled external cavity tuneable laser: The present invention relates to an external-cavity tuneable laser including a gain medium (2) and a tuneable mirror (8), wherein at least the tuneable mirror is in thermal contact, with a thermally conductive platform (10). The tuneable mirror lays substantially horizontally on the thermally conductive platform significantly thereby improving the... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20080298403 - Tunable narrow linewidth laser source: A tunable laser source has a first laser source to generate a low power continuous wave laser light having a wavelength λ1. A second laser source generates a low power continuous wave laser light having a wavelength μ2. A pump laser source generates a high power pulsed laser light having... Agent: The Boeing Company C/o Weiss & Moy, P.C.

20080298405 - Modulation of terahertz radiation: A method of modulation terahertz radiation comprising: (A) generating Terahertz radiation by pumping nonequilibrium electrons into a Magnon Gain Medium (MGM), wherein propagation of nonequilibrium electrons in the MGM causes generation of nonequilibrium magnons, and wherein interaction between the nonequilibrium magnons causes generation of the Terahertz radiation; and (B) frequency... Agent: Law Offices Of Boris G. Tankhilevich

20080298404 - Radiation beam source device: For optical data storage applications, for example, for holographic storage applications, a radiation beam (12) with a flat intensity profile is needed. The radiation source device (1) of the invention comprises a beam shaper element (5) and a collimating element (7) between a semiconductor laser (3) and an output coupler... Agent: Philips Intellectual Property & Standards

20080298406 - Compact external cavity mid-ir optical lasers: Highly compact quantum well based laser systems with external cavity configurations are tightly integrated in a very small mounting system having high thermal and vibrational stability. The mounting systems may include adjustability and alignment features specifically designed to account for the particular nature of the micro components used. The laser... Agent: Roeder & Broder LLP

20080298407 - Composite laser element and laser oscillator employing it: The present invention provides a composite laser element that solves the problems encountered with a conventional laser medium composed of an Nd:YAG single crystal or polycrystal, and exhibits excellent performance as a laser medium. The invention relates to a laser element in which two or more crystal materials are joined,... Agent: Kratz, Quintos & Hanson, LLP

20080298408 - Substrate for optical semiconductor: A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au,... Agent: Foley And Lardner LLP Suite 500

20080298409 - Nitride semiconductor laser chip and fabrication method thereof: In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by... Agent: Harness, Dickey & Pierce, P.L.C

20080298410 - Laser apparatus and the manufacturing method thereof: A laser apparatus is provided. The laser apparatus includes at least one semiconductor layer having a first surface and a second surface and an insulator layer formed on the first surface of the at least one semiconductor layer, wherein the at least one semiconductor layer and the insulator form a... Agent: Volpe And Koenig, P.C.

20080298411 - Nitride-based semiconductor laser device and method of manufacturing the same: A nitride-based semiconductor laser device includes an optical waveguide extending substantially parallel to a [0001] direction of a nitride-based semiconductor layer, a forward end face located on a forward end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer and a rear end... Agent: Ditthavong Mori & Steiner, P.C.

20080298413 - Low cost ingaaln based lasers: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions.... Agent: Jones, Tullar & Cooper, P.C.

20080298412 - Semiconductor laser device and manufacturing method thereof: A semiconductor laser device having a MQW structure composed of an active layer, a p-type second clad layer, and a p-type first clad layer sequentially stacked on an n-type clad layer provided on an n-type GaAs substrate is provided. In the semiconductor laser device, the n-type clad layer and the... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080298415 - Semiconductor device: A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by... Agent: Sonnenschein Nath & Rosenthal LLP

20080298414 - Semiconductor laser diode: A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical guide layer; a second optical guide layer disposed on the... Agent: Ked & Associates, LLP

20080298416 - Mesa vertical-cavity surface-emitting laser: The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20080298420 - Surface emitting semiconductor laser element: A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element... Agent: Kubotera & Associates, LLC

20080298418 - Vertical cavity surface emitting laser: A vertical cavity surface emitting laser capable of efficiently injecting carries into an active region directly under a photonic crystal mirror is provided. The vertical cavity surface emitting laser includes a first reflective mirror 102 constituting a lower mirror, a second reflective mirror 112 constituting an upper mirror, and an... Agent: Fitzpatrick Cella Harper & Scinto

20080298419 - Vertical cavity surface emitting laser device: A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically... Agent: Fitzpatrick Cella Harper & Scinto

20080298417 - Optical spectral filtering and dispersion compensation using semiconductor optical amplifiers: The invention provides a device and a method for extending the bandwidth of short wavelength and long wavelength fiber optic lengths. The invention provides for an optical transmitter package device comprising: a laser diode; and a semiconductor optical amplifier connected directly after and in close proximity to the laser diode,... Agent: Frederick W. Gibb, Iii Gibb & Rahman, LLC

20080298422 - Dye laser medium, dye laser device, and laser sensor: Although having been used for conventional dye laser solvents, organic solvents have a disadvantage of volatility and inflammability, which makes a dye laser device large and cumbersome. In the present invention, which has been developed to solve this problem, an ionic liquid is used as the dye laser solvent. An... Agent: Oliff & Berridge, PLC

20080298421 - Triplet quencher for use in lasers: There are disclosed compounds for assisting triplet absorption in a laser, such as a pulsed-dye laser, the compounds comprising at least one molecule chosen from nitroxides and nitrones. In one embodiment, the disclosed compounds may be mixed with the dye of a dye laser in an amount sufficient to assist... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20080298423 - Unstable optical resonator and laser device: An unstable optical resonator for an optically active medium comprising a spherical back mirror and a spherical outcoupling mirror is proposed, and an outcoupling which is asymmetrical in relation to the optical axis takes place therein.... Agent: Alston & Bird LLP

20080298424 - System and method for displaying images: A system and method for reducing visible speckle in images displayed using coherent light. In an embodiment, a system for displaying images includes a light source to produce coherent light, an array of light modulators optically coupled to the light source and positioned in a light path of the light... Agent: Texas Instruments Incorporated