Coherent light generators inventions 11/08

20080291946 - Fast quantum gates with ultrafast chirped pulses: Apparatus and methods of performing fast single-qubit quantum gates using ultrafast femtosecond frequency chirped laser pulses are disclosed. The use of chirped pulses removes the demanding restrictions of prior art approaches and allows for the construction of fast quantum gates that operate at speeds on the of order several picoseconds.... Agent: OpticusIPLaw, PLLC

20080291947 - Laser arrangements and methods: A method for preventing spatial or spectral beam seeding in a Q-switched laser is described. The Q-switch trigger of the laser is delayed by several laser resonator lifetimes after the end of the pump pulse. In this way, beam seeding is completely eliminated whilst pre-lase is maintained. The method described... Agent: Buchanan, Ingersoll & Rooney PC

20080291948 - Monolithic diode-pumped laser cavity: A monolithic pumped laser cavity design is disclosed. Elements of the laser cavity, such as gain material, Q-switch, reflector, and outcoupler, are contact bonded together with a thermally conductive epoxy. The assembly is then operatively coupled to a heat sink (e.g., by mechanical or chemical means). The assembly is potted... Agent: Bae Systems

20080291949 - Q-switched laser: A system for producing a laser light pulse is disclosed. The system includes a travelling wave or ring laser incorporating a gain medium with polarizing means for introducing substantially polarized radiation having a first polarization state into the travelling wave laser and output coupling means to substantially output couple radiation... Agent: Greenblum & Bernstein, P.L.C

20080291950 - Optical beam steering for tunable laser applications: A transmitter is disclosed including a laser array comprising a plurality of lasers spatially offset from one another and each having a laser output having a unique wavelength. A first prism is positioned to impart a first angular shift to the laser outputs to produce and a second prism is... Agent: Workman Nydegger

20080291951 - Light emitting array: A light emitting device including an array of light emitters to emit first light pulses. Each of the light emitters includes a saturable absorber and a waveguide having an electrically pumped gain region to emit the first light pulses. At least one reflector structure reflects the first light pulses into... Agent: Venable LLP

20080291952 - Optical semiconductor device: An optical semiconductor device with a semiconductor laser formed over a semiconductor substrate, and a modulator formed over the semiconductor substrate and continuously arranged with the semiconductor laser, wherein the semiconductor laser includes a first region having a diffraction grating with a phase shift, a second region arranged between the... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20080291953 - Light-emitting system provided with an integrated control photosensor and a method for producing said system: This system is particularly suitable for optical connections and comprises a light-emitting electronic component (2) and a light guide (4) that receives the light emitted by the component, said guide comprising a light input face (8) arranged facing the component and reflecting a part of the light it receives, and... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080291954 - Optical projection system and method for a cooled light source: A light projection optical system is presented. The system comprises a cooling chamber containing: a light source operative at a cool temperature being lower than 240K; a cooler unit capable of cooling said light source to said cool temperature during the light source operation, an optical window permitting light emergence... Agent: Oliff & Berridge, PLC

20080291955 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20080291956 - Driving laser diodes with immunity to temperature changes, aging, and other effects: Various systems and methods are provided to achieve laser power control. In one embodiment, a system is provided that comprises a counter that holds a digital value. An digital-to-analog converter is employed to convert the digital value to an analog current. A data threshold current is generated by a laser... Agent: Mindspeed Technologies, Inc. C/o Thomas, Kayden, Horstemeyer & Risley LLP

20080291957 - Wavelength tunable laser apparatus and wavelength control method: Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080291958 - Semiconductor laser device: In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional... Agent: Ditthavong Mori & Steiner, P.C.

20080291959 - Semiconductor device and method for manufacturing the same: In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the... Agent: Ditthavong Mori & Steiner, P.C.

20080291960 - Semiconductor laser diode and the manufacturing method thereof: A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined... Agent: Reed Smith LLP

20080291961 - Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method... Agent: Harness, Dickey & Pierce, P.L.C

20080291962 - Bandwidth-limited and long pulse master oscillator power oscillator laser systems: Laser systems have a line-narrowed master oscillator and a power oscillator for amplifying the output of the master oscillator. The power oscillator includes optical arrangements for limiting the bandwidth of radiation that can be amplified. The limited amplification bandwidth of the power oscillator is relatively broad compared to that of... Agent: Stallman & Pollock LLP

20080291963 - Fiber-based mid-infrared generation laser for laser ultrasound inspection: Embodiments of the present invention relate to a laser system and method for the optical generation of ultrasound at a remote target. This involves generating a pump laser beam with a diode-pumped fiber laser. The diode pumped fiber laser is fiber-coupled with an optical fiber, either passive or diode pumped,... Agent: Bracewell & Giuliani LLP

20080285600 - Laser system for hard body tissue ablation: A laser system for hard body tissue ablation has a pumped laser, wherein the laser system is operated in pulsed operation with several individual pulses of a temporally limited pulse length and wherein the individual pulses follow one another with temporal pulse spacing. The pumped laser has an inversion population... Agent: Gudrun E. Huckett Draudt

20080285601 - External cavity semiconductor laser and method for fabrication thereof: The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., ˜3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to provide a single... Agent: Jonathan D. Baskin Rohm And Haas Electronic Materials LLC

20080285602 - Narrow-spectrum laser device: A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when... Agent: Husch Blackwell Sanders, LLP Welsh & Katz

20080285603 - Tunable laser source with integrated optical modulator: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and... Agent: Gates & Cooper LLP Howard Hughes Center

20080285604 - Optical scanning apparatus, image forming apparatus and control method: An optical scanning apparatus capable of being applied to an image forming apparatus includes a light source which emits a light beam; a modulator which pulse-width modulates drive current supplied to the light source; and a current adding unit which adds a supplemental current to the pulse-width modulated drive current... Agent: Rossi, Kimms & Mcdowell LLP.

20080285605 - Optical scanning apparatus: An optical scanning apparatus includes a light source configured to emit a plurality of laser beams from a plurality of light emitting parts, a beam shaping unit configured to shape the laser beams emitted from the light source, a detection unit provided outside the light source and configured to detect... Agent: Canon U.s.a. Inc. Intellectual Property Division

20080285606 - Method and apparatus for optical frequency comb generation using a monolithic micro-resonator: An optical frequency comb generator includes a laser device arranged for generating input laser light having a predetermined input light frequency, a dielectric micro-resonator having a cavity exhibiting a third order nonlinearity, so that the micro-resonator is capable of optical parametric generation providing parametrically generated light, and a waveguide optically... Agent: Caesar, Rivise, Bernstein, Cohen & Pokotilow, Ltd.

20080285607 - Laser tube with external adjustable reactace for a gas discharge rf-excited laser: A laser device is provided. The laser device includes a laser tube, oscillator circuitry, and a compensating reactive component that is arranged in parallel with the laser tube.... Agent: Edwards Angell Palmer & Dodge LLP

20080285609 - Semiconductor laser diode: An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing... Agent: Rabin & Berdo, PC

20080285608 - Surface emitting laser device: A surface emitting laser device can further improve the light emission efficiency thereof to enlarge the degree of freedom of the device. The surface emitting laser device includes an active layer 103, a photonic crystal layer disposed to be adjacent to the active layer, an electrode 108 disposed on the... Agent: Fitzpatrick Cella Harper & Scinto

20080285610 - Monolithically-pumped erbium-doped waveguide amplifiers and lasers: Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer.... Agent: Hanley, Flight & Zimmerman, LLC

20080285611 - Semiconductor laser device: An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation... Agent: Harness, Dickey & Pierce, P.L.C

20080285612 - Surface emitting semiconductor laser: In a surface emitting semiconductor laser, a first distributed Bragg reflector includes first and second semiconductor layers of a first conductive type, and the first and second semiconductor layers are alternately arranged. A second distributed Bragg reflector includes first and second portions, and the first and second portions are arranged... Agent: Smith, Gambrell & Russell

20080285613 - Colpitts rf power oscillator for a gas discharge laser: A Colpitts oscillator that includes an RF-excited gas discharge laser tube as the feedback pi-network of the Colpitts oscillator.... Agent: Edwards Angell Palmer & Dodge LLP

20080285614 - Atomic lasers with exciplex assisted absorption: The present invention provides in one of the embodiments for either a continuous wave (cw) or pulsed alkali laser having an optical cavity resonant at a wavelength defined by an atomic transition, a van der Waals complex within the optical cavity, the van der Waals complex is formed from an... Agent: Adam K. Sacharoff Much Shelist Freed Denenberg Ament&rubenstein,pc

20080279227 - Method for generating terahertz electromagnetic waves by using coherent phonons: In a method for generating a terahertz electromagnetic wave by using coherent phonons in a quantum structure, high density of coherent phonons acting as a radiation source of the terahertz electromagnetic wave are obtained by exciting the inter-band transitions in a quantum structure under the condition that the energy difference... Agent: Butzel LongIPDocketing Dept

20080279228 - Optically pumped alkali laser and amplifier using helium-3 buffer gas: In one embodiment, a laser oscillator is provided comprising an optical cavity, the optical cavity including a gain medium including an alkali vapor and a buffer gas, the buffer gas including 3He gas, wherein if 4He gas is also present in the buffer gas, the ratio of the concentration of... Agent: Lawrence Livermore National Security, LLC

20080279229 - Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission: A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed between the lower reflective mirror and the upper reflective mirror,... Agent: Fildes & Outland, P.C.

20080279230 - Fabry-perot laser system with phase section, and method of use thereof: A laser having accurately adjustable frequency, the laser including a semiconductor material having a gain region and a phase tuning region, wherein the phase tuning region is coupled to a power source that applies current in order to alter the index of refraction of the phase tuning region. By altering... Agent: Arent Fox LLP

20080279231 - Optical limiter: An optical power limiter comprises an input optical transmission element, an output optical transmission element, and a power-limiting element disposed between the input and output elements for transmitting optical signals from the input element to the output element. The power-limiting element comprises an optical-limiting solid mixture containing particles of at... Agent: Nixon Peabody, LLP

20080279232 - Multi-laser system: A multi-laser system including a first laser oscillator for emitting a first laser beam, a second laser oscillator for emitting a second laser beam, a first scanner pair for receiving the first laser beam emitted by the first laser oscillator and deflecting the incident first laser beam to a desired... Agent: Buchanan, Ingersoll & Rooney PC

20080279233 - Strong distributed feedback semiconductor laser: m

20080279234 - Alignment of lasing wavelength with wavelength conversion peak using modulated wavelength control signal: According to one embodiment of the present invention, a programmable light source comprises one or more semiconductor lasers, a wavelength conversion device, and a laser controller. The controller is programmed to operate the semiconductor laser using a modulated feedback control signal. The wavelength control signal is adjusted based on the... Agent: Corning Incorporated

20080279235 - Method and apparatus for driving semiconductor lasers, and method and apparatus for deriving drive current patterns for semiconductor lasers: Semiconductor lasers are driven such that high output laser beams are stably obtained without a long start up time. A method for driving semiconductor lasers by automatic current control or automatic power control with a constant current source involves the steps of: generating a pattern of drive current values for... Agent: Sughrue Mion, PLLC

20080279236 - Method and apparatus to generate and monitor optical signals and control power levels thereof in a planar lightwave circuit: Embodiments of an optical detection apparatus are disclosed which may include one or more of a waveguide, a trench formed in the waveguide, a reflective surface, and a photodetector. The waveguide may be formed in a semiconductor substrate to propagate an optical signal received at a first end of the... Agent: Lawrence E. Lycke Blakely, Sokoloff, Taylor & Zafman LLP

20080279237 - Dynamic thermal management of laser devices: The present invention generally relates to dynamic thermal management of a device. In one aspect, a method for thermally controlling a device is provided. The method includes setting a value of a set point in a thermoelectric cooler, wherein the set point corresponds to a first operating state. The method... Agent: John C. Carey Moser, Patterson & Sheridan, L.L.P.

20080279238 - Illumination apparatus, display apparatus and projection display apparatus: An illumination apparatus includes: a solid-state light source; a Peltier element configured to cool the solid-state light source; a light amount sensor configured to detect an amount of a light emitted from the solid-state light source; a power consumption monitor configured to monitor power consumptions of the solid-state light source... Agent: Mots Law, PLLC

20080279239 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being... Agent: Drinker Biddle & Reath (dc)

20080279240 - Semiconductor laser driving unit and image forming apparatus having the same: A semiconductor laser driving unit is disclosed that includes a first part generating a bias current; a second part generating a first current for causing the semiconductor laser to emit light, and outputting the first current to the semiconductor laser in accordance with an input control signal; a third part... Agent: Cooper & Dunham, LLP

20080279241 - Light-emitting element and method for manufacturing the same: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the... Agent: Rader Fishman & Grauer PLLC

20080279243 - Distributed feedback (dfb) quantum dot laser structure: A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a... Agent: Rabin & Berdo, PC

20080279242 - Photonic crystal structures and methods of making and using photonic crystal structures: A light emitting device having a buried photonic bandgap (PBG) structure is created using a relatively simple fabrication method known as epitaxial layer overgrowth (ELOG). By burying the PBG structure, the difficulties and disadvantages associated with the known technique of etching holes into a LED emission surface to form the... Agent: Kathy Manke Avago Technologies Limited

20080279244 - Single-mode distributed feedback semiconductor lasers: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one... Agent: Lowe Hauptman & Berner, LLP

20080279245 - Vcsel, optical device, light irradiation device, data processing device, light source, free space optical communication device, and optical transmission system: A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity... Agent: Fildes & Outland, P.C.

20080279246 - Semiconductor laser apparatus and method for mounting semiconductor laser apparatus: According to an aspect of the present invention, there is provided a semiconductor laser apparatus including: a laser device including: a semiconductor substrate, first and second resonators formed on the semiconductor substrate, and first and second electrodes that are respectively connected with the first and the second resonators and extend... Agent: Mcginn Intellectual Property Law Group, PLLC

20080279247 - Electrically excited gas discharge laser for generating high-repetition frequency light pulses and method for the production thereof: A transversally electrically excited gas discharge laser for generating light pulses with a high pulse repetition rate. The gas discharge laser has components include a gas-tight discharge tube with opposed wall passages and front ends. The discharge tube includes ceramic material with laser gas sealed therein. The components also include... Agent: Darby & Darby P.C.

20080279248 - Laser machining apparatus: Provided is a laser machining apparatus. The laser machining apparatus includes: a laser oscillator emitting laser beams; a first dividing means on which the laser beams emitted from the laser oscillator are incident to be selectively divided so that the incident laser beams progress along at least one path from... Agent: Buchanan, Ingersoll & Rooney PC

20080273556 - Semiconductor light-emitting device: A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film... Agent: Leydig Voit & Mayer, Ltd

20080273558 - High power fiber chirped pulse amplification system utilizing telecom-type components: An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.... Agent: Sughrue Mion, PLLC

20080273557 - Illumination system for optical modulators: A phase plate and lens modify light beams emitted by an array of lasers to form an efficient illumination source for a MEMS light modulator array. The phase of the electric field emitted by the lasers is modified such that the after passing through a lens the beam profile at... Agent: Morrison Ulman Nupat, LLC

20080273559 - Multiple output repetitively pulsed laser: A continuously pumped, mode-locked laser is disclosed, which includes a cavity dumper that can remove a constant fraction of the light from the cavity at every 1/f period of time, independent of the time at which the first pulse in a train is initiated. The cavity dumper includes a modulator... Agent: Altera Law Group, LLC

20080273560 - Method and apparatus for optical mode multiplexing of multimode lasers and arrays: According to methods and apparatus described herein, multimode laser source capable of emitting a diffraction-limited beam of various shapes (including single-lobe shape) can be realized. An optical apparatus for generating a such diffraction-limited beam comprises a spatial phase modulator for spatially modulating a spectrally dispersed optical signal emitted from a... Agent: Gardere Wynne Sewell LLP Intellectual Property Section

20080273561 - Method for forming anti-reflective coating: A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating... Agent: Dow Corning Corporation Co1232

20080273562 - Nitride semiconductor device and method for fabricating the same: A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 32, which makes contact with a... Agent: Mark D. Saralino (mei) Renner, Otto, Boisselle & Sklar, LLP

20080273563 - High power semiconductor laser diode: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20080273564 - Semiconductor laser element and semiconductor laser element array: A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line... Agent: Drinker Biddle & Reath (dc)

20080273565 - Excited state quantum cascade photon source: A quantum cascade source, such as a QC laser, is provided comprising a plurality of repeat units each including an active region and an injector region. The active region includes at least two quantum wells that, in response to an applied electrical bias, provide a first, second, and third electron... Agent: Dann, Dorfman, Herrell & Skillman

20080273566 - Semiconductor light-emitting element, method of producing semiconductor light-emitting element, backlight, display unit, electronic device, and light-emitting unit: A semiconductor light-emitting element includes a nitride-based Group III-V compound semiconductor, wherein the semiconductor light-emitting element has a structure in which an active layer including one or a plurality of well layers is sandwiched between a p-side cladding layer and an n-side cladding layer, and the composition of at least... Agent: Bell, Boyd & Lloyd, LLP

20080273567 - Hybrid waveguide systems and related methods: A III-V semiconductor waveguide is coupled with a Si waveguide to form a hybrid structure. Spatial location of the optical mode (or supermode) of the hybrid structure is controlled by controlling at least one between the geometry and the refractive index of the structure, e.g., varying width of the Si... Agent: Steinfl & Bruno

20080273569 - Surface-emitting laser device: A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080273568 - Beam combiner for a multicolor laser display: A beam combiner is specified for a multicolor laser display having an optical light source (1) which has at least two semiconductor lasers (11, 13), in which the beam combiner has a lens (14), and the lens (14) is arranged in a beam path which is formed by beams emitted... Agent: Cohen Pontani Lieberman & Pavane LLP

20080273570 - Optically pumped waveguide laser with a tapered waveguide section: The present invention relates to an optically pumped waveguide laser (2) comprising a waveguide with an optical propagation layer (3, 4) and two resonator mirrors (6, 7). The propagation layer (3, 4) consists of a gain medium at least along a section of said waveguide, said gain medium allowing up-conversion... Agent: Philips Intellectual Property & Standards