Coherent light generators inventions 08/08

20080205456 - Laser uses for single-crystal cvd diamond: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a χ(3) nonlinear crystalline material for Raman laser... Agent: Morgan Lewis & Bockius LLP

20080205457 - Image recording apparatus: An image recording apparatus according to this invention includes a frequency divider 22 for generating a reference signal of a frequency higher than that of a dot clock signal, a pulse exposure control circuit 31 for causing a laser beam emitted from a laser diode 27 to irradiate a recording... Agent: Mcdermott Will & Emery LLP

20080205458 - Laser beam irradiation apparatus and laser beam machining apparatus: A laser beam irradiation apparatus including: a laser beam oscillation unit having a pulsed laser beam oscillator for oscillating a pulsed laser beam, and a repetition frequency setter; an acousto-optical deflector by which the pulsed laser beam oscillated by the laser beam oscillation unit is deflected and the output is... Agent: Greer, Burns & Crain

20080205459 - Light source device and projector: A light source device includes a plurality of light emission sections disposed in parallel with an interval, wherein the interval for the light emission sections near each end portion in an array of the light emission sections is narrower than the interval near a center portion in the array.... Agent: Oliff & Berridge, Plc

20080205460 - Optical amplifying apparatus: The present invention provides an optical amplifying apparatus having: a CPU 11 for processing various signals; a plurality of circuits 17, 18 for controlling respective devices 4, 9 required for optical amplification; a first storing unit 14 for storing a program supplied from a user a gate array 12 for... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080205462 - Surface emitting laser array, production process thereof, and image forming apparatus having surface emitting laser array: A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through... Agent: Fitzpatrick Cella Harper & Scinto

20080205463 - Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device: A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080205464 - Nitride semiconductor laser element: A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of... Agent: Global Ip Counselors, LLP

20080205465 - Vertical cavity surface emitting laser (vcsel) and related method: A vertical cavity surface emitting laser (VCSEL) is disclosed that has a relatively low vertical resistance between the Ohmic contact to the upper distributed Bragg reflector (DBR) and the active layer, and a structure to substantially confine the current flow to the laser cavity so that the VCSEL can produce... Agent: Orion Law Group

20080205466 - Ridge waveguide laser with a compressively strained layer: In one example embodiment, a ridge waveguide (RWG) laser includes a substrate, an active layer disposed above the substrate, a ridge structure disposed above the active layer, a contact layer disposed above the ridge structure, a compressively strained dielectric passivation layer disposed above the active layer and extending along either... Agent: Workman Nydegger

20080205467 - Semiconductor laser device: A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first... Agent: Amin, Turocy & Calvin, LLP

20080205468 - Semiconductor laser device having a low reflection film of stable reflectance: A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of... Agent: Leydig Voit & Mayer, Ltd

20080205469 - Optical element: An optical element includes: a surface emitting semiconductor laser portion; a separator formed superjacent to the surface emitting semiconductor laser portion; and a light detector formed superjacent to the separator. The separator electrically separates the surface emitting semiconductor laser portion and the light detector and has a first separation layer... Agent: Oliff & Berridge, Plc

20080205470 - Monolithic lighting device: A monolithic lighting device is disclosed. According to an embodiment of the present invention, the monolithic lighting device includes a monolithic lens, refracting a two-dimensional beam of light transferred from an outside and condensing the refracted beam into a one-dimensional beam. The monolithic lens has a first refraction surface, refracting... Agent: Christensen, O'connor, Johnson, Kindness, Pllc

20080205471 - Adjusting the composition of a process gas in a laser processing system: A laser processing system includes a laser processing means, a gas mixing unit, and a controller. The controller controls and adjusts the composition of the process gas for laser processing. The controller includes a data storage for technology tables by means of which the composition of the process gas is... Agent: Fish & Richardson Pc

20080205472 - Laser gas injection system: A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas may comprise: utilizing at least one of a plurality of laser operating input and/or output parameters; utilizing... Agent: William C. Cray

20080205473 - High power low inductance rf hermetic sealed feed-through for slab co2 lasers: A low inductance, hermetically sealed, RF shielded feed-through is provided for exciting low impedance discharges associated with high power CO2 slab lasers. The feed-through mechanically obtains RF contact, preferably, at the center of the length of the electrodes that are inserted within the long laser housing, thereby making it easier... Agent: Stallman & Pollock LLP

20080205474 - Electrodes for generating a stable discharge in gas laser systems: Arcing is minimized in a discharge chamber of a gas laser system by utilizing an electrode which comprises a surface portion capable of functioning as one of an anode and a cathode in order to energize a gas mixture in a discharge chamber of the gas discharge laser system, a... Agent: Stallman & Pollock LLP

20080205475 - Unstable resonator with variable output coupling: Through the use of a relatively inexpensive third mirror on a novel folded hybrid unstable resonator configuration, the optimum output coupling for a given laser design can be explored quickly and easily with a minimum of intracavity mirror alignment. No changes in either the radii of curvature of the three... Agent: Stallman & Pollock LLP

20080205476 - High efficiency partial distributed feedback (p-dfb) laser: A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating housed in the laser cavity that is separated from both the front-end and the back-end of the laser facets.... Agent: Dorsey & Whitney LLP Intellectual Property Department

20080205477 - Light emitting device: A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light,... Agent: Global Ip Counselors, LLP

20080205461 - Optical phase conjugation laser diode: A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to... Agent: Kirkpatrick & Lockhart Preston Gates Ellis LLP

20080198879 - Hybrid gain guiding in laser resonators: Methods and systems for hybrid gain guiding in laser resonators that combines the features of gain guiding and fiber or other types of lasers into a single system. Hybrid gain guiding in laser resonators is not limited to conventional fiber lasers. Any type of gain guided fiber, index guided or... Agent: Brian Steinberger/ucf

20080198880 - Method and apparatus for increasing fiber laser output power: A fiber laser with reduced stimulated Brillouin scattering includes a spool having a height and characterized by an induced temperature gradient with the height. The fiber laser also includes a fiber wrapped on the spool and characterized by a signal power increasing along the length of the fiber. The induced... Agent: Townsend And Townsend And Crew, LLP

20080198881 - Optimization of laser bar orientation for nonpolar and semipolar (ga,al,in,b)n diode lasers: Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser,... Agent: Gates & Cooper LLP Howard Hughes Center

20080198882 - Active cooling of crystal optics for increased laser lifetime: A laser beam is generated and transmitted within an enclosed pathway through at least one crystal optic at a power density that progressively degrades transmissivity of the crystal optic with accumulating fluence. The crystal optics are cooled below normal operating temperatures to slow the progressive degradation in the transmissivity of... Agent: Corning Incorporated

20080198883 - Laser thermal management systems and methods: A laser system thermal management system includes a laser gain assembly and a thermal management assembly. The laser gain assembly includes a laser gain medium and may include laser pump diodes. The thermal management system includes a high pressure gas tank connected to an open-cycle Joule-Thompson refrigerator. Cooled and partially... Agent: Macpherson Kwok Chen & Heid, LLP

20080198884 - Constant-current drive circuit: A voltage supplied from a power supply is boosted by a boosting circuit unit to generate a direct-current voltage, and the pulse-shape direct-current voltage is applied to LED while a constant-voltage control unit controls the direct-current voltage. The operation of LED is controlled by a control unit and a PWM... Agent: Birch Stewart Kolasch & Birch

20080198885 - Low creep metallization for optoelectronic applications: A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a “conducting” metallization for providing electrical conductivity, interspersed with a plurality of layers of another metallization. By providing many layers the thickness of each individual layer can be reduced. Reduction... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20080198886 - Nitride semiconductor laser element: The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a... Agent: GlobalIPCounselors, LLP

20080198888 - Semiconductor laser apparatus and optical amplifier apparatus: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult... Agent: Stanley P. Fisher Reed Smith LLP

20080198887 - Semiconductor laser device and method of fabricating the same: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a... Agent: Mcdermott Will & Emery LLP

20080198889 - Semiconductor laser device: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that... Agent: Leydig Voit & Mayer, Ltd

20080198890 - Vertically emitting laser and method of making the same: Diode lasers comprise a substrate and a number of material layers disposed thereon that include a P-type material layer, and an N-type material layer. A gain layer and diffraction grating feedback layer can be also be included in the material layers. The material layers are formed by epitaxial deposition, during... Agent: Jeffer, Mangels, Butler & Marmaro, LLP

20080198891 - Excimer laser device operable at high repetition rate and having high band-narrowing efficiency: A narrow-band discharge excited laser device including a laser chamber having a laser gas sealed therein, a pair of electrodes provided within the laser chamber to face each other with a predetermined distance therebetween, a band-narrowing module having a magnifying prism and a grating and receiving laser light passing through... Agent: Wenderoth, Lind & Ponack, L.L.P.

20080198892 - Laser pointer: A laser pointer has a body, a laser generator, a retractable cord assembly and an external-power interface. The laser generator is disposed on the body, and the retractable cord assembly is mounted in the body. The retractable cord assembly has an electrical cable having a first end coupled to the... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20080198893 - Laser assembly: A laser assembly is suitable for coupling laser light into at least one optical fiber. The laser assembly contains a plurality of laser light sources disposed spaced from a light entrance surface of the at least one optical fiber. The laser light sources are divided into at least one group... Agent: Lerner Greenberg Stemer LLP

20080192778 - Optical fiber for fiber laser device and fiber laser device using same: A cladding is provided at an outer periphery of a solid-core doped with rare earth ions, and a metal layer is formed to be adjacent to the cladding to provide an optical fiber for a fiber laser device. The metal layer having an inner metal layer and an outer metal... Agent: Mcginn Intellectual Property Law Group, Pllc

20080192779 - Construction, surface emitting laser, and device having the surface emitting laser: A surface emitting laser comprises an underlayer, an active layer formed on the underlayer, a slab layer formed on the active layer and having a photonic crystal structure optically combined with the active layer, and a metal thin film formed on the slab layer and having a periodic fine structure;... Agent: Fitzpatrick Cella Harper & Scinto

20080192780 - Q-switched all-fibre laser: A Q-switched all-fiber laser utilizes a long period fibre grating (LPFG) modulator. The LPFG modulator is characterized by optical spectral characteristics that are controlled by application of stress via an actuator. In particular, the actuator applies stress to selected sections of the LPFG in order to modulate a light signal... Agent: Anderson Gorecki & Manaras LLP

20080192781 - Semiconductor light emitting device: The present invention relates in general to semiconductor light emitting devices and in particular to methods of altering the spatial emission patterns of such devices. A known problem with these prior art light emitting devices (and laser diodes in general) is that their far-field emission patterns are elliptical and astigmatic... Agent: Brooks, Cameron & Huebsch , Pllc

20080192782 - Dual wavelength laser device, and system comprising same: The invention concerns a laser device (1, 13) comprising: a three-level amplifying medium (3) adapted to emit a first laser beam (3) of fundamental wavelength; a four-level amplifying medium (5) adapted to emit a second laser beam (7) of fundamental wavelength; a non-linear crystal (4) adapted to mix the first... Agent: Young & Thompson

20080192783 - Ophthalmological device: An ophthalmological device (1) comprises a controllable optical correction element (14) for the variable modulation of the wavefront of deflected femtosecond laser pulses. A control module (13) controls the correction element (14) as a function of the deflection of the femtosecond laser pulses in such a way that the femtosecond... Agent: Oliff & Berridge, Plc

20080192784 - Semiconductor laser with reduced heat loss: Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation.... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20080192785 - Diode laser array and method for manufacturing such an array: The invention relates to a diode laser array with at least one laser bar and having at least one emitter and a heat sink array for cooling the at least one laser bar.... Agent: Hoffman, Wasson & Gitler, P.c.

20080192787 - Semiconductor laser device, and image display device: There are provided a semiconductor laser device and an image display device that enable to efficiently release a heat from stripe active regions, and be operated at a low-consumption current and a low-consumption electric power. A semiconductor laser element includes stripe active regions for emitting laser beams. On a base... Agent: Wenderoth, Lind & Ponack L.l.p.

20080192786 - Tunable radiation emitting semiconductor device: There is described a tunable radiation emitting semiconductor device (50) comprising at least one elongated structure (120) at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The at least one... Agent: Philips Intellectual Property & Standards

20080192788 - Nitride semiconductor laser device and nitride semiconductor device: A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and... Agent: Global Ip Counselors, LLP

20080192789 - Injector laser: Injection radiators are used for pumping solid-state and fibre lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation and in the form of highly efficient general-purpose solid-state radiation sources used in a given waveband, including white light emitters used for illumination. Said invention... Agent: Sughrue Mion, Pllc

20080192790 - Laser diode: A laser diode including a self-focusing layer and an active layer is disclosed. The active layer has a window portion. The self-focusing layer is disposed at the window portion. The active layer generates a laser beam by current excitation. After the laser beam has penetrated the self-focusing layer, the dimensions... Agent: Birch Stewart Kolasch & Birch

20080192791 - Semiconductor light-emitting element and semiconductor light-emitting device: According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being... Agent: Amin, Turocy & Calvin, LLP

20080192792 - Dynamics of terahertz radiation: An apparatus for generation of Terahertz radiation comprising: (A) a Magnon Gain Medium (MGM), wherein the MGM supports generation of nonequilibrium magnons; and (B) at least one magnon mirror (MM). The nonequilibrium magnons are generated in the MGM. Interaction between nonequilibrium magnons leads to generation of Terahertz photons.... Agent: Law Offices Of Boris G. Tankhilevich

20080192793 - Method and system for producing singlet delta oxygen (sdo) and laser system incorporating an sdo generator: A method for producing singlet delta oxygen may include forming a molecular beam of oxygen clusters from oxygen from an oxygen source. The method may also include optically pumping the molecular beam of oxygen clusters to produce singlet delta oxygen.... Agent: Charles L. Moore Moore & Van Allen Pllc

20080192794 - Lateral-bragg-grating-surface-emitting laser/amplifier (lbgse): m

20080187010 - Laser device triggered by a photonic fibre: A device producing laser pulses of durations smaller than 30 ns, and including along its internal optical axis: a laser resonator of optical length smaller than 2 m including two reflecting ends and incorporating an MPF photonic fibre pumped continuously by at least one pump wave with laser diodes, the... Agent: Young & Thompson

20080187011 - Tuning optical cavities: An inhomogeneous optical cavity is tuned by changing its shape, such as by changing reflection surface positions to change tilt angle, thickness, or both. Deformable components such as elastomer spacers can be connected so that, when deformed, they change relative positions of structures with light-reflective components such as mirrors, changing... Agent: Leading Edge Law Group, PLC/xerox-parc

20080187012 - Light source device, image display device, projector, illumination device, and monitor device: A light source device generates irradiation light that is irradiated onto a predetermined face, the light source device including: a laser light source that emits laser light; a diffractive optical element that diffracts the laser light; a diffusion optical element that has an incidence face into which the laser light... Agent: Oliff & Berridge, PLC

20080187013 - Opto-isolator including a vertical cavity surface emitting laser: The present invention relates to opto-isolators. Opto-isolators are disclosed that include a transmitter package and a vertical VCSEL disposed within the transmitter package. The opto-isolators further include a receiver package and a photodetector disposed within the receiver package. The photodetector is optically coupled to the VCSEL and configured to receive... Agent: Workman Nydegger

20080187014 - Light source device, lighting device, monitor device, and projector: A light source device includes a light source section for supplying a laser beam, a wavelength conversion element for converting a wavelength of the laser beam from the light source section, a temperature measuring section for measuring temperature, a temperature adjusting section for adjusting the temperature of the wavelength conversion... Agent: Oliff & Berridge, PLC

20080187015 - Vcsel, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system: A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the... Agent: Fildes & Outland, P.C.

20080187016 - Thick pseudomorphic nitride epitaxial layers: Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.... Agent: Goodwin Procter LLP Patent Administrator

20080187017 - Organic semiconductor laser and method for producing it: An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (1), and also the method for producing said laser.... Agent: Thomas Langer Cohen Pontani Lieberman & Pavane LLP

20080187018 - Distributed feedback lasers formed via aspect ratio trapping: Structures including dielectric diffraction gratings. In some embodiments, laser devices include diffraction gratings defined by openings formed in a dielectric material.... Agent: Goodwin Procter LLP Patent Administrator

20080187019 - Volume bragg grating laser mirror device: A volume Bragg grating (VBG) has a narrow wavelength. The wavelength is changed by changing an angle of the VBG or a temperature of the VBG. Thus, the present invention has a narrow wavelength, a bright laser, a simple system and an adjustable reflection for a wide application to laser... Agent: Troxell Law Office PLLC