Coherent light generators inventions 06/08

20080151944 - Line narrowing module: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength... Agent: William C. Cray Cymer, Inc.

20080151945 - Ultrashort stable mode locked fiber laser at one micron by using polarization maintaining (pm) fiber and photonic bandgap fiber (pbf): A fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump. The mode-locked fiber laser further includes an all fiber based laser cavity including a dispersion management fiber segment for generating a negative (anomalous) to match a positive normal dispersion. The... Agent: Bo-in Lin

20080151946 - Monolithic solid state laser apparatus: There is provided a solid-state laser apparatus, including a solid-state active element (4) having major surfaces and first and second edges (10,12) oppositely disposed to each other, the first edge (10) being flat and the second edge (12) being constituted by first and second perpendicularly disposed surfaces (12) or having... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080151947 - Periodically-chipred holographic volume transmission gratings: The present application discloses a laser device and includes at least one laser system having at least one two emitters therein, each emitter configured to output a laser output having a first wavelength spectrum, at least one grating device having at least two grating regions formed thereon, each grating region... Agent: Brian F. Swienton Newport Corporation

20080151949 - External-cavity laser light source apparatus and laser light emission module: An external-cavity laser light source apparatus includes a plurality of laser light emission modules, each including a first mirror, a second mirror reflecting fundamental wave light toward the first mirror, a lasing medium emitting the fundamental wave light, a wavelength converter performing wavelength conversion on incident fundamental wave light to... Agent: Oliff & Berridge, Plc

20080151948 - Frequency-doubled edge-emitting semiconductor lasers: A frequency-doubled, edge-emitting semiconductor laser includes a separate confinement heterostructure surmounted by a waveguide including a converting layer of a periodically poled, optically nonlinear material. Fundamental radiation generated in the heterostructure is directionally coupled from the heterostructure into the waveguide, is converted to second-harmonic radiation in the converting layer and... Agent: Stallman & Pollock LLP

20080151950 - Multiwavelength semiconductor laser array and method of fabricating the same: A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate... Agent: Morris Manning Martin LLP

20080151951 - Laser optical system: A compact optical system is provided for delivering laser radiation with high optical efficiency and uniformity. The optical system includes, in order of the propagation of light, a refractive beam expander to adjust beam size and energy density, a beam flattening module to increase throughput and beam uniformity, an anamorphic... Agent: Mills & Onello LLP

20080151952 - Semiconductor light emitting device and method for fabricating same: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the... Agent: Harness, Dickey & Pierce, P.L.C

20080151953 - Electromagnet energy distributions for electromagnetically induced mechanical cutting: Output optical energy pulses including relatively high energy magnitudes at the beginning of each pulse are disclosed. As a result of the relatively high energy magnitudes which lead each pulse, the leading edge of each pulse includes a relatively large slope. This slope is preferably greater than or equal to... Agent: Stout, Uxa, Buyan & Mullins LLP

20080151954 - Nd:yv04 laser crystal and method of growth and use thereof: In a method of forming an Nd:YVO4 laser crystal, a melt of Nd:YVO4 in a vacuum is provided and an Nd:YVO4 seed crystal is provided in the vacuum with its c-axis oriented perpendicular to a surface of the melt. While in the vacuum, Nd:YVO4 from the melt is caused to... Agent: The Webb Law Firm, P.c.

20080151955 - Etched-facet ridge lasers with etch-stop: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop... Agent: Jones, Tullar & Cooper, P.c.

20080151956 - Interband tunneling intersubband transition semiconductor laser: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately... Agent: Ladas & Parry LLP

20080151957 - Semiconductor device: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080151958 - Semiconductor surface emitting device: This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first... Agent: Smith, Gambrell & Russell

20080151959 - Surface emitting laser and manufacturing method thereof: A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of... Agent: Anne Vachon Dougherty

20080151960 - Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate,... Agent: Robert J. Depke Lewis T. Steadman

20080151961 - Vertical cavity surface-emitting laser and method of fabricating the same: A vertical cavity surface-emitting laser (VCSEL) and a method of fabricating the same with easier alignment of a light output side aperture and an oxide aperture, The VCSEL includes: lower and upper reflection layers laminated with each other and forming a longitudinal resonance section there between; an active layer for... Agent: Cha & Reiter, Llc

20080144671 - Laser system: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a... Agent: William C. Cray Cymer, Inc.

20080144672 - Phase matching of high order harmonic generation using dynamic phase modulation caused by a non-collinear modulation pulse: Phase matching high harmonic generation (HHG) uses a single, long duration non-collinear modulating pulse intersecting the driving pulse. A femtosecond driving pulse is focused into an HHG medium (such as a noble gas) to cause high-harmonic generation (HHG), for example in the X-ray region of the spectrum, via electrons separating... Agent: Jennifer L. Bales

20080144673 - Fiber laser with large mode area fiber: A single-mode fiber laser includes a single mode holding, large mode area optical fiber assembly having a large mode area core, a first cladding and a second cladding. The optical fiber assembly has several unique sections including a gain section having a ytterbium-doped core, first and second reflective sections including... Agent: Barlow, Josephs & Holmes, Ltd.

20080144674 - Superfluorescent fiber source with enhanced mean wavelength stability: A doped superfluorescent fiber source (SFS) has an enhanced mean wavelength stability. A method stabilizes the mean wavelength of a SFS. The method includes providing an SFS including a doped fiber. The method further includes pumping the SFS with pump light from a pump source having a wavelength dependent on... Agent: Knobbe Martens Olson & Bear LLP

20080144675 - Mechanically q-switched co2 laser: A CO2 laser has a resonator mirror that oscillates about an axis perpendicular to the resonator axis through an angular range of oscillation sufficient that the resonator is only able to deliver radiation for a fraction of an oscillation period of the mirror. In one example of the laser, the... Agent: Stallman & Pollock LLP

20080144676 - Passively modelocked figure eight fiber laser: A passively mode-locked, figure-eight laser is formed of all normal dispersion fiber, eliminating the need for using anomalous dispersion fiber. The fiber is selected to be polarization maintaining, with the remaining components of the laser (couplers, isolator, gain fiber) also formed as polarization maintaining elements. In one embodiment, a section... Agent: Wendy W. Koba, Esq.

20080144677 - Broadly tunable single-mode quantum cascade laser sources and sensors: A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the... Agent: 24ip Law Group Usa, Pllc

20080144678 - Circuit and method for lessening noise in a laser system having a frequency converting element: A method and circuit is disclosed for a laser system wherein the power of the laser signal is kept at a constant near optimum value and a portion of an frequency doubled output signal is monitored and detected so that noise within the frequency doubled output signal can be minimized.... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.a.

20080144679 - Optical module and optical communication device: An optical module includes a light source, a variable transmittance member disposed on a light path of output light from the light source distant from the light source, and a coupling section for coupling the output light from the light source via the variable transmittance member, wherein coupling efficiency as... Agent: Oliff & Berridge, Plc

20080144680 - Single mode light source device having external cavity: The present invention relates to a single mode light source device having an external cavity. The single mode light source device according to the present invention includes a laser diode, an integrated lens, and an optical fiber. The optical fiber has an incidence surface cleaved at a predetermined angle, such... Agent: Nixon & Vanderhye, Pc

20080144681 - Method for discriminating anomaly in gas composition and discharge excitation type gas laser oscillator: A discharge excitation type gas laser oscillator has a discharge excitation unit for exciting a laser gas by discharge in a discharge tube to generate induced emission of laser light, a high-frequency power supply unit for supplying power to the discharge tube, and a controller unit for controlling output current... Agent: Drinker Biddle & Reath (dc)

20080144682 - Semiconductor laser diode and optical module employing the same: As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, a angled... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080144683 - Vertical cavity surface emitting semiconductor laser device: The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080144685 - Graded in content gallium nitride-based device and method: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises a graded molar In concentration.... Agent: Philip D. Freedman Pc

20080144684 - Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device: A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a... Agent: Mcdermott Will & Emery LLP

20080144687 - Semiconductor laser device: A semiconductor laser device includes a coating film for adjustment in reflectance formed at a light-emitting portion of semiconductor, wherein the coating film has a thickness d set to satisfy R (d, n)>R (d, n+0.01) and d>λ/n, where n represents a refraction index of the coating film for a lasing... Agent: Harness, Dickey & Pierce, P.L.C

20080144686 - Surface emitting laser: A surface emitting laser includes an n-side multilayered reflection film and an active layer which are formed on a substrate. On the active layer, a mesa region is formed by sequentially stacking an AlGaAs current blocking layer, a p-side multilayered reflection film, a p-type contact layer and the like. A... Agent: Rabin & Berdo, Pc

20080144688 - Light emitting devices with an electrically active top reflector contact: According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing... Agent: Marger Johnson & Mccollom, P.c. - Xerox

20080144689 - Power combining and energy radiating system and method: A power-combining system and method for generating a high-power coherent wavefront are generally described herein. Other embodiments may be described and claimed. The power-combining system comprises a combining-radiating assembly having a plurality of ports. Phase controllers generate signals with a predetermined phase shift for an associated one of the ports.... Agent: Horace St. Julian, Esq. Raytheon Company, Eo/e04/n119

20080144690 - High power, end pumped laser with off-peak pumping: A laser configuration producing up to 100's of Watts of output is provided, based on a solid-state gain medium, a source of pump energy which is detuned from the maximum absorption wavelength for the gain medium, and optics arranged to deliver the pump energy through an end of the gain... Agent: Haynes Beffel & Wolfeld LLP

20080144691 - Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method: An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in... Agent: Kratz, Quintos & Hanson, LLP

20080137692 - Long wavelength vertical cavity surface emitting laser device and method of fabricating the same: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound... Agent: Rabin & Berdo, Pc

20080137693 - Harmonic frequency conversion module: A harmonic frequency conversion module is disclosed including a polarization maintaining (PM) fiber optical link for providing an output stabilized from power fluctuation by the inclusion of one or more polarizers in the PM fiber optical link. Removing polarization distortions removes noise which has a significant negative effect on the... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.a.

20080137694 - Self-pulsating laser diode: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency... Agent: Rabin & Berdo, Pc

20080137695 - Optical semiconductor device and optical waveguide: A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080137697 - Laser light source apparatus and image generating apparatus using laser light source apparatus: Disclosed is a laser light source apparatus including an excitation light source, a pair of resonator mirrors, and a resonator including the excitation light source and the pair of resonator mirrors. In the laser light source apparatus, one of two higher harmonic waves generated from the wavelength conversion element is... Agent: Robert J. Depke Lewis T. Steadman

20080137696 - Quasi-phase matching and quantum control of high harmonic generation in waveguides using counterpropagating beams: All-optical quasi-phase matching (QPM) uses a train of counterpropagating pulses to enhance high-order harmonic generation (HHG) in a hollow waveguide. A pump pulse enters one end of the waveguide, and causes HHG in the waveguide. The counterpropagation pulses enter the other end of the waveguide and interact with the pump... Agent: Jennifer L. Bales

20080137698 - Integration of laser sources and detectors for a passive optical network: Various methods and apparatuses are described in which an array of optical gain mediums capable of lasing are contained in a single integral unit. The array may contain four or more optical gain mediums capable of lasing. Each optical gain medium capable of lasing supplies a separate optical signal containing... Agent: Blakely Sokoloff Taylor & Zafman

20080137699 - Optical module: An optical module includes a stem; a first lead pin and a second lead pin for receiving differential signals, the first and second lead pins penetrating the stem; a mount block fixed to the stem; a laser diode having a pair of electrodes; a submount mounted on the mount block... Agent: Leydig Voit & Mayer, Ltd

20080137700 - Semiconductor laser device and method for manufacturing same: A semiconductor laser device (A) includes a base (1A) a block (1B) fixed to the base, and a semiconductor laser element (2) provided at the block. The semiconductor laser device (A) further includes a lead (4A) extending through the base (1A) and electrically connected to the semiconductor laser element (2).... Agent: Hamre, Schumann, Mueller & Larson, P.c.

20080137702 - Buried semiconductor laser and method for manufacturing the same: A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to bilaterally disposed on both sides of the active layer; a... Agent: Mcginn Intellectual Property Law Group, Pllc

20080137701 - Gallium nitride based semiconductor device with reduced stress electron blocking layer: A semiconductor device comprises an active layer and a cladding layer. An electron blocking layer is at least partially disposed in a region between the active layer and the cladding layer and is configured to form a potential barrier to a flow of electrons from the active layer toward the... Agent: Ryan, Mason & Lewis, LLP

20080137703 - Semiconductor optical element and manufacturing method thereof: In order to provide excellent device characteristics and enhance fabrication yield and run-to-run reproducibility in a buried device structure using a low mesa on a p-type substrate, a cross sectional configuration before growth of a contact layer of a device, i.e., after growth of an over-cladding layer is flattened so... Agent: Workman Nydegger

20080137704 - Tuneable unipolar lasers: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end... Agent: Michaelson & Associates

20080137705 - High brightness semiconductor laser diode arrays: Systems and methods for high brightness, improved phase characteristics laser diodes.... Agent: Burns & Levinson, LLP

20080137707 - Device for beam shaping: A device for beam shaping is particularly suited for producing a linear intensity distribution in a working plane. The device includes a laser light source, which can emit a multi-mode laser radiation. The beam quality factor of the radiation with regard to a first direction perpendicular to the propagation direction... Agent: Lerner Greenberg Stemer LLP

20080137706 - Laser mirror for a ring laser gyroscope: A laser mirror for a ring laser gyroscope (RLG) includes an intermediate optical coating, positioned within approximately a mid portion of the laser mirror for improving the performance of the RLG, and specifically for improving the reflectance of at least one wavelength emission. The properties of the intermediate optical coating... Agent: Honeywell International Inc. Patent Services Ab-2b

20080130692 - Phosphate glass based optical device and method: An optical device includes an optical fiber having a core including multicomponent phosphate glasses, and a cladding surrounding the core, and a first fiber Bragg grating formed in a first portion of the core of the optical fiber and having an index modulation amplitude greater than 2×10−5.... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080130693 - Driving method for laser light source device, laser light source device, image display device, monitor device, and illumination device: A driving method for laser light source device includes: providing a laser light source device including a laser light source, a wavelength conversion element converting the wavelength of the light emitted from the laser light source, and a resonator mirror constituting a resonator structure between the laser light source and... Agent: Oliff & Berridge, Plc

20080130694 - Laser frequency stabilizing apparatus, method and computer program product for stabilizing laser frequency: A laser frequency stabilizing apparatus stabilizes an oscillation frequency of laser light by varying a resonator length on the basis of a saturated absorption line included in an optical output signal. The optical output signal is obtained by irradiating an absorption cell with the laser light. The laser frequency stabilizing... Agent: Oliff & Berridge, Plc

20080130695 - System and method for laser temperature compensation: A method for compensating for changes in output power or wavelength of an optical source with temperature. Many optical sources have power and/or wavelength variations with temperature which can be compensated by open- or closed-loop methods if a method of accurately measuring the optical source temperature is available. The voltage... Agent: Herbert Burkard

20080130696 - Methods and systems for optimizing laser and electro-absorption modulator performance for long-haul optical transmission: The present invention provides a compact, low cost integrated continuous wave (CW) laser/electro-absorption (EA) modulator solution that supports the non-return to zero (NRZ) modulation format for long-haul optical transmission that results in high output extinction ratio of an integrated EA modulated laser (EML) and low modulator chirp. The methods and... Agent: Clements Bernard Miller

20080130698 - Nitride-based semiconductor device and method of fabricating the same: A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of... Agent: Ditthavong Mori & Steiner, P.c.

20080130697 - Semiconductor laser: A semiconductor laser having a ridge structure, comprises a lower cladding layer, an active layer, and an upper cladding layer that are sequentially arranged and supported by a GaAs semiconductor substrate having a misorientation angle of 7 degrees or more. The active layer is AlGaAs. The upper and lower cladding... Agent: Leydig Voit & Mayer, Ltd

20080130699 - Content selection using speech recognition: Disclosed are a method and wireless device for selecting a content file using speech recognition. The method includes establishing a set of tagged text items wherein each tagged text item is uniquely associated with one content file of the set of content files. At least one audible utterance (226) is... Agent: Motorola, Inc.

20080130700 - Apparatus for generating laser radiation: A laser arrangement exhibits a laser rod or a laser tube (3) as well as a high-voltage connection (19) for generating the laser beam. This laser arrangement has, in addition to the high-voltage connection, at least one electromagnetic radiation source (25) in the region of the laser rod or laser... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080130701 - Gas laser apparatus and method: A gas discharge laser apparatus is disclosed. In an embodiment, the gas discharge laser apparatus includes a gas laser provided with a discharge chamber, and a gas storage chamber in controllable fluid communication with the discharge chamber via a valve member, the gas storage chamber configured to have a pressure... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20080130702 - High energy solid-state laser with offset pump and extraction geometry: A laser system and method. The inventive laser includes an annular gain medium; a source of pump energy; and an arrangement for concentrating energy from the source on the gain medium. In a more specific implementation, a mechanism is included for rotating the gain medium to effect extraction of pump... Agent: Patent Docket Administration Raytheon Company

20080130703 - Ultra-low heat laser: An ultra-low heat laser that does not rely on florescence cooling. Generally, the inventive laser includes a pump source operable at a pump frequency and a gain medium disposed to receive energy from the source and lase at a frequency close to the pump frequency. In the illustrative embodiment, the... Agent: John E. Gunther Raytheon Company