Coherent light generators inventions 05/08

20080123694 - Fiber laser apparatus and laser processing method: The invention relates to a fiber laser apparatus having a structure that enables efficient laser processing for an object and to a laser processing method. The fiber laser apparatus comprises an amplifying section for amplifying seed light by cladding-pumping, and has a structure for further using a residual component of... Agent: Mcdermott Will & Emery LLP

20080123695 - Light source: A spatial coupling provided between an amplified-light waveguide and an output-light waveguide includes a wavelength selecting element that selectively transmits a light having a desired wavelength band out of a spontaneous emission light generated in the amplified-light waveguide and a lens unit that couples the spontaneous emission light to the... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080123696 - Semiconductor laser device having scattering portion and method of fabricating the device: Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such,... Agent: Harness, Dickey & Pierce, P.L.C

20080123697 - Method for making a high power semiconductor laser diode: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20080123700 - Optical device, laser beam source, laser apparatus and method of producing optical device: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing... Agent: Ratnerprestia

20080123699 - Pump laser integrated vertical external cavity surface emitting laser: Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer,... Agent: Harness, Dickey & Pierce, P.L.C

20080123698 - Tb-doped luminescent compound, luminescent composition and luminescent body containing the same, light emitting device and solid-state laser device: A Tb-doped luminescent compound contains Tb and at least two kinds of metal elements other than Tb, and emits light by irradiation with excitation light. In the Tb-doped luminescent compound, the concentration of Tb with respect to the total number of moles of all of the metal elements including Tb... Agent: Sughrue Mion, PLLC

20080123701 - Wavelength switchable semiconductor laser using half-wave coupled active double-ring resonator: A semiconductor laser comprises two optical ring resonators, each comprising an optical waveguide electrically pumped to provide optical gain. The two ring resonators have different round-trip optical path lengths, and are coupled to each other through a half-wave optical coupler. The half-wave optical coupler has a predetermined cross-coupling coefficient and... Agent: Lightip Technologies, Inc.

20080123702 - Automatic setting of laser diode bias current: Threshold current may be determined and one or more bias sources may be programmed in a laser drive circuit. For example, a laser diode emits light along first and second optical paths. A polarizer is positioned in the first optical path between the laser diode and a first detector, which... Agent: Lexmark International, Inc. Intellectual Property Law Department

20080123703 - Stabilized laser source with very high relative feedback and narrow bandwidth: This invention relates to the stabilization of a laser source used in optoelectronics, specifically a source comprising a semiconductor laser diode (1). Such laser sources are often used as so-called pump lasers for fiber amplifiers in the field of optical communication, erbium-doped fiber amplifiers being a prominent example. Such lasers... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20080123704 - System and method for regulating the power of a laser beam: Disclosed is a system (10) for regulating the power of a laser beam (12). The system (10) comprises a first transparent plate (16) that is arranged in the light path of the laser beam (12) and can rotate about a first axis (18), that is perpendicular to the light path,... Agent: Duane Morris LLP

20080123705 - Thermally tuned diode-laser bar package: A directly cooled diode-laser bar package includes a diode-laser bar bonded to a heat-sink. The operating temperature of the diode-laser bar can be selectively varied by varying the thermal impedance of the heat-sink in or near a region of the heat-sink on which the diode-laser bar is bonded. The thermal... Agent: Stallman & Pollock LLP

20080123706 - Constant current type power supplies: Constant current power supply arrangements can charge a capacitor with a constant current and are suitable as power supplies for laser diodes. A power supply for a laser diode comprises: a variable voltage power supply, a load path for carrying a laser diode, a shunt path connected in parallel with... Agent: Martin D. Moynihan Prtsi

20080123707 - Rf-excited gas laser with dc bias and methods of manufacturing and using: A RF-excited gas laser can include a metal housing containing a laser gas medium; and a first electrode and a second electrode disposed in the metal housing. The first and second electrodes are configured and arranged for coupling to a RF source for exciting the laser gas medium between the... Agent: Darby & Darby P.C.

20080123708 - Laser projector for audience scanning: An apparatus and method for a laser light projector, including a laser beam generated by a laser light source; a scanner associated with the laser light source and having one or more moving mirrors capable of scanning the laser beam along X-Y coordinates; a power meter positioned for quantifying the... Agent: Jacqueline E. Hartt, Ph.d Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.

20080123709 - Process for controlling indium clustering in ingan leds using strain arrays: Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active... Agent: Mh2 Technology Law Group, LLP

20080123710 - Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in... Agent: Cohen Pontani Lieberman & Pavane LLP

20080123711 - Nitride light-emitting device: A bottom-emitting nitride light-emitting device with enhanced light extraction efficiency is provided. The increased light output is provided by the reflector that redirects upward-going light towards the bottom output. A mesh contact area, in one form, spreads current across the entire carrier injection area without occupying the entire top surface... Agent: Fay Sharpe / Xerox - Parc

20080123712 - Measuring water vapor in high purity gases: Low concentrations of water vapor in a gas stream can be detected and quantified using absorption spectroscopy in the infrared spectral region. Absorption spectra can recorded using tunable diode lasers as the light source. Modulation of the laser signal and demodulation of the resultant detector response yields dependable measurements that... Agent: Mintz, Levin, Cohn, Ferris, Glovsky And Popeo, P.c Attn: Patent Intake Customer No. 64046

20080123713 - Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element: The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator... Agent: Yokoi & Co., U.s.a., Inc.

20080117940 - Laser arrangement and a method for generating power pulses: A laser arrangement including a gain fiber to provide nonlinear amplification, the gain fiber having a first end and a second end, a dispersion adaptation fiber having a first end and a second end, and an output coupler is disclosed. The first end of the dispersion adaptation fiber is connected... Agent: Davidson Berquist Jackson & Gowdey LLP

20080117941 - Photonic crystal structure and surface-emitting laser using the same: A structure includes a photonic crystal layer which has a first member having a first refractive index and having a surface with a plurality of holes periodically arranged therein, and includes a low-refractive-index layer adjacent to the photonic crystal layer and having a second refractive index that is lower than... Agent: Fitzpatrick Cella Harper & Scinto

20080117942 - Structure using photonic crystal and surface emitting laser: A structure includes a photonic crystal layer including a first member having a high refractive index in which a plurality of holes are periodically arranged, and a second member having a low refractive index. A third member is disposed on the first member. The third member has a refractive index... Agent: Fitzpatrick Cella Harper & Scinto

20080117943 - Laser diode driver with multiple modulation current source: The present invention is to provide an LD-driver that enables to adjust the waveform of the driving current to the LD even the driver is constituted with a current controlled device such as bipolar transistor. The LD-driver of the invention provides a plurality of modulation current sources each having a... Agent: Smith, Gambrell & Russell

20080117944 - Diode laser ramping power supply: Method and apparatus are provided that limit the current ramp rate applied to a laser bar or a single emitter laser diode to a predetermined value of 150 milliamps per millisecond or less. In addition to the laser diode and its power supply, the apparatus includes a power supply control... Agent: Patent Law Office Of David G. Beck

20080117945 - Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system: A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the... Agent: Sonnenschein Nath & Rosenthal LLP

20080117946 - Laser chips and vertical external cavity surface emitting lasers using the same: Example embodiments may provide an increased efficiency laser chip and/or a vertical external cavity surface emitting laser (VECSEL) using the same. Example embodiment laser chips may include a substrate; a DBR (distributed Bragg reflector) layer on the substrate, an active layer on the DBR layer having multiple quantum wells excited... Agent: Harness, Dickey & Pierce, P.L.C

20080117947 - Laser diode: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection... Agent: Rader Fishman & Grauer Pllc

20080117948 - Narrow-band laser device for exposure apparatus: A narrow-band laser device for exposure apparatus that allows to reduce damage to, and to hence extend the life of, optical elements such as chamber windows, output coupling mirrors or the like. A ring resonator is provided in an amplification stage laser of the narrow-band laser device for exposure apparatus... Agent: Welsh & Katz, Ltd

20080117949 - Gas lasers including nanoscale catalysts and methods for producing such lasers: Gas lasers including nanoscale catalysts and methods for producing such lasers are disclosed herein. In one embodiment, a gas laser includes a gas containment structure having a gas discharge region and a laser gas medium in the gas discharge region. The gas laser also includes a plurality of optical elements... Agent: Perkins Coie LLP Patent-sea

20080112442 - Surface-emitting laser and method for producing the same: A surface-emitting laser includes reflectors. One of the reflectors has multiple layers including one or more high-refractive-index layers and one or more low-refractive-index layers which are alternately stacked. At least one of the low-refractive-index layers includes a first region containing aluminum oxide and a second region surrounding the first region.... Agent: Fitzpatrick Cella Harper & Scinto

20080112443 - Vertical external cavity surface emitting laser: Provided is a Vertical External Cavity Surface Emitting Laser (VECSEL). The VECSEL includes a semiconductor chip, a pump laser, a narrow bandwidth polarization filter, an external mirror, and a Second Harmonic Generation (SHG) element. The semiconductor chip includes an active layer generating light having a wavelength and a reflective layer... Agent: Harness, Dickey & Pierce, P.L.C

20080112445 - Distributed feedback laser with improved optical field uniformity and mode stability: A directly modulated distributed feedback (DFB) laser with improved optical field uniformity and mode stability may include a laser cavity and a distributed reflector and/or external reflectors. The distributed reflector may be a Bragg grating and may extend asymmetrically over a only portion of the laser cavity. The external reflectors... Agent: Applied Optoelectronics, Inc.

20080112446 - Semiconductor laser module, semiconductor laser, and method of assembling the same: The present invention aims to provide a miniaturized optical laser module that eliminates shift in contacting surfaces when contacting and fixing with adhesive two element carriers respectively holding an optical element and obtains a smooth adhesion fixation. A semiconductor laser module that has a configuration in which the element carriers... Agent: Jackson Chen Nec Corporation Of America

20080112447 - Laser protection arrangement with safety cutoff: Laser protection arrangement with a safety cutoff comprising a passive laser protection wall which stores the radiation energy of impinging radiation of a laser of a laser material processing installation, a laser protection foil which causes a detectable change when struck by laser radiation and which is arranged in front... Agent: Gerald H. Kiel, Esq. Reed Smith LLP

20080112450 - Homogeneous-beam temperature-stable semiconductor laser and method of production: The semiconductor laser according to the invention is characterized in that it comprises, in an active layer, a first part (7) in the form of a narrow monomode stripe with transverse gain guiding, terminating in a second part (8) flaring out from the first part, also with transverse gain guiding.... Agent: Lowe Hauptman & Berner, LLP

20080112449 - Semiconductor laser device: A semiconductor laser device includes first and second conductivity type cladding layer side guide layers disposed in direct contact with respective surfaces of an active layer, sandwiching the active layer; and first and second conductivity type cladding layers disposed in direct contact with the first and second conductivity type cladding... Agent: Leydig Voit & Mayer, Ltd

20080112451 - Semiconductor laser diode with narrow lateral beam divergence: The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.a.

20080112453 - Group-iii nitride based laser diode and method for fabricating same: A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers... Agent: Koppel, Patrick & Heybl

20080112452 - Laser diode and method for fabricating same: A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an... Agent: Koppel, Patrick & Heybl

20080112454 - Self aligned diode fabrication method and self aligned laser diode: A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge.... Agent: Koppel, Patrick & Heybl

20080112444 - Laser device and laser module: A laser module includes a substrate 1, a first laser element 2 placed on the substrate 1, a second laser element 3 placed with an output surface opposed to the first laser element 2 on the substrate 1, and a mirror 7 placed between the first laser element 2 and... Agent: Hamre, Schumann, Mueller & Larson P.c.

20080112448 - Nitride semiconductor laser diode: A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers... Agent: Mcdermott Will & Emery LLP

20080112455 - System and method for packaging optical elements between substrates: A laser module includes a first substrate, a second substrate, an optical element, a frequency converter, a selective reflector and a surface-emitter. The first and second substrates are positioned substantially parallel to each other and each include one or more alignment elements. The optical element, the frequency converter, the selective... Agent: Texas Instruments Incorporated

20080107141 - Wavelength conversion laser apparatus: A wavelength conversion laser apparatus including: a laser light source emitting primary wavelength light; a non-linear optical crystal including: a light waveguide region having a first refractivity, the light waveguide region receiving the primary wavelength light to output as secondary wavelength light; and a clad region adjacent to the light... Agent: Mcdermott Will & Emery LLP

20080107144 - Nitride based laser diode and method of manufacturing nitride based laser diode: The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set... Agent: Horst M Kasper

20080107145 - Structure having photonic crystal and surface-emitting laser using the same: To provide a structure having a photonic crystal that can display a reflection function using GR even when a refractive index difference between a photonic crystal layer and a cladding layer adjacent thereto is not sufficient and a surface-emitting laser using the structure. The structure includes a photonic crystal layer... Agent: Fitzpatrick Cella Harper & Scinto

20080107139 - Erbium doped fibres: A method of producing green light signals, comprising coupling pump signals from at least one pump source into at least one erbium doped fibre (EDF) which cause ground state absorption (GSA), and excited state absorption (ESA) in erbium ions of the EDF, which produces green light signals, wherein the majority... Agent: Kirschstein, Ottinger, Israel & Schiffmiller, P.c.

20080107140 - Optical device, laser beam source, laser apparatus and method of producing optical device: After forming domain inverted layers 3 in an LiTaO.sub.3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing... Agent: Ratnerprestia

20080107142 - Method and arrangement for the excitation of a gas laser arrangement: For exciting a gas laser arrangement with a plurality of HF signals, at least two pulsed HF signals are generated and at least two electrodes or pairs of electrodes of the gas laser arrangement are supplied with the pulsed HF signals, respectively. At least two of the electrodes or pairs... Agent: Fish & Richardson Pc

20080107143 - Pump light control of a lamp-pumped laser: A lamp-pumped laser includes a pump light source for optically pumping a laser medium, such as a laser rod, a pump light sensor that detects the optical pumping power of the pump light source, and a control unit connected to receive an output signal from the pump light sensor and... Agent: Fish & Richardson Pc

20080101422 - Semiconductor laser device including a light shield plate, semiconductor laser device package, and methods of manufacturing the same: Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate,... Agent: Harness, Dickey & Pierce, P.L.C

20080101424 - Output power control for harmonic-generating laser: In harmonic-generating laser apparatus, plane-polarized fundamental radiation of a laser is converted to harmonic radiation by an optically nonlinear crystal. The power of harmonic radiation generated by the apparatus is selectively varied by selectively rotating the plane of polarization of fundamental radiation entering the optically nonlinear crystal.... Agent: Stallman & Pollock LLP

20080101425 - Electro-absorption semiconductor optical modulator: An electro-absorption semiconductor optical modulator comprises an n-type cladding layer of III-V compound semiconductor; a p-type cladding layer of III-V compound semiconductor; and an active region. The active region is provided between the n-type cladding layer and the p-type cladding layer, and has a quantum well structure. The quantum well... Agent: Smith, Gambrell & Russell

20080101426 - Laser beam source device and image display apparatus including the laser beam source device: A laser beam source device includes a light source that emits light of a first wavelength, a wavelength converting element that converts a wavelength of the light of the first wavelength entered into a second wavelength, a multi-layer film mirror having a characteristic of reflecting light of the first wavelength... Agent: Oliff & Berridge, PLC

20080101428 - Laser-power control method, and laser driving device and optical disc apparatus using the method: In a laser-power control method, a power of laser light emitted from a laser-light emitting element and a driving current for driving the laser-light emitting element are detected. An approximate expression indicating a driving-current to light-power characteristic of the laser-light emitting element is updated on the basis of the detected... Agent: Knobbe Martens Olson & Bear LLP

20080101429 - System and method for generating intense laser light from laser diode arrays: Laser modules using two-dimensional laser diode arrays are combined to provide an intense laser beam. The laser diodes in a two-dimensional array are formed into rows and columns, and an optical assembly images light generated by laser diodes in a column into an optical fiber. The laser light outputs of... Agent: Leydig Voit & Mayer, Ltd

20080101430 - Rf laser: An RF excited gas laser including an offset V-shaped laser cavity. The laser includes a first and second ceramic body portions with the laser cavity at least partially defined by the ceramic body portions. At least one internal gas reservoir is also at least partially defined by the first and... Agent: Grossman, Tucker, Perreault & Pfleger, PLLC

20080101423 - Saturable absorbers for q-switching of middle infrared laser cavaties: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while... Agent: Smith, Gambrell & Russell

20080101427 - Stable/unstable optical cavity resonator for laser: An improved resonator and optical cavity is adapted for use with a chemical laser that has a nozzle upstream of the resonator that emits a gain medium in a flow direction, and a pressure-recovery system downstream of the resonator. The optical resonator comprises first and second optical elements that are... Agent: Storm LLP

20080101431 - Laser irradiation apparatus: The laser radiation apparatus is provided having substantial light emission intensity although the laser radiation apparatus is miniaturized. A solid state laser rod; the excitation light source formed such that the excitation light source surrounds an emission axis in a section perpendicular with respect to the emission axis of laser... Agent: Greenblum & Bernstein, P.L.C