Coherent light generators inventions 02/08

20080049797 - Laser light control device for image forming apparatus, and image forming apparatus: A laser light control device for an image forming apparatus designed to improve the auto power control (APC) accuracy and to reduce the control time. A multifunctional optical element has a plurality of different optical characteristics. A detecting unit is adapted to detect laser light from the semiconductor laser. A... Agent: Rossi, Kimms & Mcdowell LLP.

20080049798 - Optical transmitter module for stabilizing optical output power and wavelength: An optical transmitter module includes a semiconductor laser for outputting forward outgoing light and backward outgoing light, a temperature control device for controlling a temperature of the semiconductor laser, a beam splitter plate for receiving incidence of the backward outgoing light and outputting split light, which is reflected part of... Agent: Young & Thompson

20080049802 - Semiconductor laser diode having wafer-bonded structure and method of fabricating the same: Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first... Agent: Harness, Dickey & Pierce, P.L.C

20080049803 - Semiconductor laser diode device: The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser,... Agent: Stanley P. Fisher Reed Smith LLP

20080049804 - Semiconductor laser diode with a mesa stripe buried by a current blocking layer made of un-doped semiconductor grown at a low temperature and a method for producing the same: The present invention provides a semiconductor laser diode that has the buried mesa stripe and a current blocking layer without involving any pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The mesa stripe, buried... Agent: Smith, Gambrell & Russell

20080049805 - Buried type semiconductor laser: A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding layer, laminated one atop the other. On both sides of the ridge section, a current blocking... Agent: Leydig Voit & Mayer, Ltd

20080049796 - Optical wavelength conversion light source: An allowable temperature range satisfying phase matching conditions of a wavelength conversion device is widened. A wavelength conversion light source includes a semiconductor laser diode device (1) applied with an antireflection film (3), a lens (4) arranged opposite to the semiconductor laser diode device (1), an optical fiber (5) having... Agent: Birch Stewart Kolasch & Birch

20080049799 - High speed data channel including a cmos vcsel driver and a high performance photodetector and cmos photoreceiver: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a... Agent: Law Office Of Charles W. Peterson, Jr. Yorktown

20080049800 - Semiconductor laser device and method for fabricating same: A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser... Agent: Mark D. Saralino (mei) Renner, Otto, Boisselle & Sklar, LLP

20080049801 - Edge-emitting semiconductor laser chip: s

20080049806 - Nitride semiconductor laser and method for fabricating the same: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper... Agent: Mark D. Saralino (mei) Renner, Otto, Boisselle & Sklar, LLP

20080049807 - Method of manufacturing light source device and the light source device: A method of manufacturing a light source device includes: preparing a holder, on which a semiconductor laser and a coupling lens are provided, the coupling lens having a first side and a second side opposite to the first side, the first side confronting the semiconductor laser, a photopolymerizable resin being... Agent: Scully Scott Murphy & Presser, PC

20080043785 - Single longitudinal mode solid-state laser generated by fiber bragg grating external cavity: Single longitudinal mode solid-state laser comprises solid-state laser and single-mode optical fiber, which Bragg grating is written on, as an external cavity. In one embodiment, the multimode laser is coupled from solid-state laser by lens system into external cavity which includes the optical fiber with Bragg grating written on. In... Agent: Mr. Pin Long

20080043786 - Tunable light source for use in microscopy: A tunable lighting source, especially for a microscope, which contains a laser, in which the lighting source delivers spectrally variable and spatially coherent radiation. The tunable lighting source is based on a structured substrate coated with a laser medium, the structured substrate provided with the laser medium having a geometrically... Agent: Jacobson Holman PLLC

20080043791 - Semiconductor laser equipment: The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which... Agent: Drinker Biddle & Reath (dc)

20080043793 - Vcsel with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device: A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the... Agent: Fildes & Outland, P.C.

20080043794 - Intersubband quantum box stack lasers: The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box... Agent: Foley & Lardner LLP

20080043795 - Light-emitting device: A light-emitting device includes a substrate, a semiconductor stacked structure positioned on the substrate, a transparent electrode positioned on a first region of the semiconductor stacked structure, and at least one photonic crystal positioned in a second region of the semiconductor stacked structure. Preferably, the first region surrounds the second... Agent: Wpat, PC Intellectual Property Attorneys

20080043798 - Vertical-cavity semiconductor optical devices: A vertical-cavity device comprises: (a) a chip comprising an active semiconductor layer for providing optical gain; (b) a first mirror arranged on a first side of the active layer; (c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with... Agent: Stout, Uxa, Buyan & Mullins LLP

20080043799 - Gas laser oscillator: A gas laser oscillator (2) that excites a laser gas to generate laser light includes a circulation path (9) for the laser gas, a circulation means (14) for circulating the laser gas through the circulation path, a pressure detection means (16) for detecting the pressure of the laser gas in... Agent: Lowe Hauptman Ham & Berner, LLP

20080043784 - Optical synchronization system for femtosecond x-ray sources: Femtosecond pump/probe experiments using short X-Ray and optical pulses require precise synchronization between 100 meter-10 km separated lasers in a various experiments. For stabilization in the hundred femtosecond range a CW laser is amplitude modulated at 1-10 GHz, the signal retroreflected from the far end, and the relative phase used... Agent: Lawrence Berkeley National Laboratory

20080043788 - Laser-diode pumped solid-state laser apparatus, optical scanning apparatus, image forming apparatus and display apparatus: A laser-diode pumped solid-state laser apparatus comprises at least one laser diode producing a pumping laser light, and at least one laser light generator including a monocrystalline substance doped with a dopant element and pumped with the pumping laser light from at least one laser diode, the monocrystalline substance containing... Agent: Dickstein Shapiro LLP

20080043787 - Nonlinear optical crystals and their manufacture and use: Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such as compounds that contain transition-metal elements and/or lanthanides, other than yttrium, lanthanum, and lutetium. Some NLO crystals with low concentrations of these contaminants are capable... Agent: Klarquist Sparkman, LLP

20080043789 - Amplifier chain for generating ultrashort different width light pulses: The present invention relates to an amplifier chain for generating ultrashort light pulses of different pulse durations and applies in particular to amplifier chains suitable for amplifying picosecond and femtosecond pulses. The amplifier chain comprising a stretcher with at least one entry dispersive element of the grating type and intended... Agent: Lowe Hauptman & Berner, LLP

20080043790 - Portable laser device: A hand-held laser device includes a casing formed with a substantially hollow interior space and having a laser emitter thereinside. The laser emitter is formed with an exciting lamp and a laser rod. A source generating a stream of gaseous coolant is provided within the interior space. A fluid cooling... Agent: Lawrence G. Fridman, Esq. Silber & Fridman. Esqs.

20080043792 - High speed data channel including a cmos vcsel driver and a high performance photodetector and cmos photoreceiver: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a... Agent: Law Office Of Charles W. Peterson, Jr. Yorktown

20080043796 - Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080043797 - Semiconductor laser device and method for fabricating the same: A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of... Agent: Mcdermott Will & Emery LLP

20080043800 - High energy solid-state laser with offset pump and extraction geometry: A laser system and method. The inventive laser includes an annular gain medium; a source of pump energy; and an arrangement for concentrating energy from the source on the gain medium. In a more specific implementation, a mechanism is included for rotating the gain medium to effect extraction of pump... Agent: Patent Docket Administration

20080043801 - Optical mounting scheme for waveguide lasers and waveguide laser incorporating the same: Certain example embodiments of this invention relate to waveguide lasers (e.g., RF-excited waveguide lasers). Certain example embodiments of this invention provide an optical mounting scheme for use with a waveguide laser. In certain example embodiments, a carrier including an optic holder may be provided. An optic may be mounted to... Agent: Nixon & Vanderhye, PC

20080037597 - Laser apparatus: In a first embodiment, the invention makes use of a Neodymium doped YAG (Nd: YAG) gain medium placed in an optical resonant cavity formed by two mirrors. Power extraction is maximized for a specific laser cavity. In particular the concave curvature on the rod ends contributes a negative lensing component... Agent: Reinhart Boerner Van Deuren S.c. Attn: Linda Kasulke, Docket Coordinator

20080037599 - Wavelength conversion laser apparatus: In a wavelength conversion laser device, a laser light source emits first wavelength light. A non-linear optical crystal converts the first wavelength light into second wavelength light. A rotational driver rotates the non-linear optical crystal so as to alter an incidence angle of the first wavelength light with respect to... Agent: Mcdermott Will & Emery LLP

20080037600 - Wavelength conversion laser device: A wavelength conversion laser device includes a laser light source for emitting a first wavelength light, a nonlinear optical crystal for converting the first wavelength light into a second wavelength light, and a nonlinear optical crystal rotator for rotating the nonlinear optical crystal so as to change an incident angle... Agent: Mcdermott Will & Emery LLP

20080037602 - Method and system for a laser diode bar array assembly: A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.... Agent: Hayes Soloway P.C.

20080037605 - Optical waveguide, semiconductor optical integrated element, and methods for manufacturing the same: An optical waveguide has a semiconductor laser section, an intermediate section, and an optical modulator section on a surface of a substrate. The distance of a surface extending outwardly from and transverse to both sides of a mesa stripe in the semiconductor laser section from the surface of the substrate... Agent: Leydig Voit & Mayer, Ltd

20080037608 - Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps: The present invention is a tunable semiconductor laser for swept source optical coherence tomography, comprising a semiconductor substrate; a waveguide on top of said substrate with multiple sections of different band gap engineered multiple quantum wells (MQWs); a multiple of distributed feedback (DFB) gratings corresponding to each said band gap... Agent: Stallman & Pollock LLP

20080037609 - Excimer laser device: An excimer laser device capable of suppressing deterioration of optical elements provided in a laser chamber even if output energy per pulse is increased more than the conventional level, in which a width of a laser beam applied to the optical elements provided in the laser chamber is enlarged so... Agent: Wenderoth, Lind & Ponack, L.L.P.

20080037595 - System and method for providing a tunable optical parametric oscillator laser system that provides dual frequency output for non-linear vibrational spectroscopy and microscopy: A system is disclosed for providing a first electromagnetic field and a second electromagnetic field to vibrational analysis equipment that is responsive to a difference between first and second frequencies of the first and second electromagnetic fields respectively. The system includes a non-linear crystal that may be pumped at a... Agent: Gauthier & Connors, LLP

20080037596 - Laser beam irradiation apparatus and laser working machine: A laser beam irradiation apparatus includes a laser beam oscillation unit including a pulse laser beam oscillator for oscillating a pulse laser beam and a cycle frequency setting unit for setting the cycle frequency, an acousto-optic deflection unit for deflecting the optical axis of the pulse laser beam oscillated from... Agent: Patrick G. Burns, Esq.

20080037598 - Reduction of surface heating effects in nonlinear crystals for high power frequency conversion of laser light: A device for generating a frequency converted laser beam includes a nonlinear crystal having a first end face and a second end face opposed to the first end face. The nonlinear crystal is configured to receive at least one input laser beam at the first end face and output a... Agent: Townsend And Townsend And Crew, LLP

20080037601 - Avoiding temperature-related faults of a laser by temperature adjustment: A method for preserving a mechanical alignment of a semiconductor laser (100) by use of a temperature control system (101). The semiconductor laser includes an optical mount (110) for mounting a semiconductor laser diode (131) and optical components (132,133). A thermal device (140) and a temperature sensor (180) are used... Agent: Birch Stewart Kolasch & Birch

20080037603 - Rod-type solid laser apparatus: In a rod-type solid laser apparatus, a laser rod 1 is held by a rod holder 5, the rod holder 5 is held in a recessed portion 40 formed in an adjust ring 7, and the adjust ring 7 is mounted on a cavity container 4. The rod holder 5... Agent: Sughrue-265550

20080037604 - Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method: Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second... Agent: Lemaire Patent Law Firm, P.l.l.c.

20080037606 - Laser with resonant reflector: A vertical cavity surface-emitting laser (VCSEL) is disclosed. The VCSEL includes a layer that at least partially defines an optical cavity having an optical axis. The VCSEL further includes a resonant reflector layer extending across at least part of the optical cavity. The resonant reflector layer has a refractive index... Agent: Workman Nydegger

20080037607 - Semiconductor laser diode with a ridge structure buried by a current blocking layer made of un-doped semiconductor grown at a low temperature and a method for producing the same: The present invention provides a laser diode with a current blocking layer without a pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The active region includes first and second regions. The upper cladding layer,... Agent: Smith, Gambrell & Russell

20080031288 - Picosecond laser apparatus and methods for its operation and use: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with... Agent: Banner & Witcoff, Ltd.

20080031289 - Laser module allowing direct light modulation and laser display employing the same: Provided are a laser module allowing direct light modulation and a laser display employing the laser module. The laser module may include a semiconductor chip, a Volume Bragg Grating (VBG), a pump laser and a non-linear optical element. The semiconductor chip includes an active layer generating light of primary wavelength... Agent: Harness, Dickey & Pierce, P.L.C

20080031294 - Structures and methods for adjusting the wavelengths of lasers via temperature control: One embodiment of the present invention provides a system that facilitates adjusting the wavelengths of lasers via temperature control. This system includes a chip with an active face upon which active circuitry and signal pads reside. A thermal-control mechanism provides localized thermal control of two lasers mounted upon the active... Agent: Sun Microsystems Inc. C/o Park, Vaughan & Fleming LLP

20080031296 - Scalable and defect-tolerant quantum-dot-based quantum computer architectures and methods for fabricating quantum dots in quantum computer architectures: Various embodiments of the present invention are directed to quantum-dot-based quantum computer architectures that are scalable and defect tolerant and to methods for fabricating quantum dots in quantum computer architectures. In one embodiment of the present invention, a node of quantum computer architecture comprises a first photonic device supported by... Agent: Hewlett Packard Company

20080031299 - Heater-attached alkali-encapsulated cell and alkali laser apparatus: An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of... Agent: Drinker Biddle & Reath (dc)

20080031290 - Laser and method for generating pulsed laser radiation: A laser for generating pulsed laser radiation. An element is arranged in the resonator to generate laser radiation having the first wavelength by frequency conversion of the primary radiation. The resonator is switchable into a first state in which it is open to the primary radiation, and a second state... Agent: Patterson, Thuente, Skaar & Christensen, P.A.

20080031291 - Laser beam irradiation apparatus and laser working machine: A laser beam irradiation apparatus includes an oscillation unit, an acousto-optic deflection unit for deflecting a laser beam oscillated by the oscillation unit, a condenser for condensing the deflected laser beam, and a control unit. The control unit determines an actual output power of the laser beam based on a... Agent: Patrick G. Burns, Esq. Greer, Burns & Crain, Ltd.

20080031292 - Laser beam path length difference detector, laser phase controller, and coherent optical coupler: Provided are a small-sized, low-cost, and easy-to-use laser optical path length difference detecting device, a laser optical path length difference detecting device, and a coherent optical coupling device. The laser optical path length difference detecting device detects an optical path length difference between propagation paths of a first laser beam... Agent: Birch Stewart Kolasch & Birch

20080031293 - Littrow external oscillator semiconductor laser optical axis deviation correction method and device: A Littrow-type external-cavity diode laser optical axis displacement correction method and device to easily, expensively, and accurately correct displacement of optical axis in Littrow-type ECDLs is provided. In the Littrow-type ECDL optical axis displacement correction device and method, a means for introducing a laser beam, a jig 36 for integrally... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080031295 - Semiconductor light emitting element and manufacturing method thereof: A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on... Agent: Drinker Biddle & Reath (dc)

20080031297 - Optical element, method for manufacturing optical element and semiconductor laser device using the optical element: The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device... Agent: Fitzpatrick Cella Harper & Scinto

20080031298 - Laser processing deivce: A laser processing device in which even a short nozzle provided with a follower roller (35) can prevent disturbance of a laser beam and contamination of protective glass and in which shield gas can act effectively. The laser processing device comprises a head section (11) from which a laser beam... Agent: Stevens Davis Miller & Mosher, LLP

20080031300 - Inclined pump beam radiation emitter: A device for emitting radiation by optical pumping. A mechanism emits light, and includes a first resonant cavity having a first input mirror and an output mirror. An optical pumping device emits a pumping beam from the first cavity, the normal to the input surface of the resonant cavity is... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080031301 - Surface-emitting type semiconductor laser: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where X is a design wavelength, n1 is a refractive index of a topmost... Agent: Harness, Dickey & Pierce, P.L.C