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Coherent light generators January USPTO class listing 01/08

20080025348 - High energy, ultrashort pulse ring fiber laser having a linear dispersion compensator with chirped bragg gratings: A high energy, ultra short pulse ring fiber laser is provided that includes a passively mode locked, all optical fiber laser formed from a closed loop of optical fiber doped with erbium or other rare earth metal, a pump light source optically coupled to the loop of optical fiber, and... Agent: Corning Incorporated

20080025351 - Material processing system with variable repetition rate laser: A system for using a pulsed laser beam to process materials includes a selector for varying the pulse repetition rate of the laser beam. Also included is a control unit for identifying an optimal pulse repetition rate that is compatible with the required pulse energy level for processing the material.... Agent: Nydegger & Associates

20080025352 - Laser apparatus having ability to automatically correct laser beam power: A laser apparatus including a laser oscillating section, electric power source, a laser-power measuring section and a power-source controlling section. The power-source controlling section includes a power-supply instructing section instructing the power source to perform an electric-power supplying operation for the laser oscillating section in response to a laser-oscillation command... Agent: Lowe Hauptman Ham & Berner, LLP

20080025353 - Wavelength locked diode-laser bar: A wavelength-locking arrangement for a diode-laser bar includes a cylindrical fast-axis collimating lens and a fast-axis corner reflector. An optical filter is located between the cylindrical lens and the corner reflector for defining the locked wavelength. The corner reflector provides that radiation emitted by each of the diode-lasers and collimated... Agent: Stallman & Pollock LLP

20080025354 - Ultra-fast beam dithering with surface acoustic wave modulator: A method for processing a coherent light pulse is provided. A coherent light pulse is dithered at a high frequency when it is reflected off of or transmitted through a piezoelectric material having an optical interface surface. A SAW-producing device that is disposed on the piezoelectric material generates a surface... Agent: Patterson & Sheridan, LLP

20080025355 - Semiconductor laser micro-heating element structure: A semiconductor laser is provided comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure. The micro-heating element structure comprises a pair of heating element strips extending along the longitudinal dimension of the semiconductor laser. The heating element strips are on... Agent: Corning Incorporated

20080025357 - Microchannel cooler for high efficiency laser diode heat extraction: A laser diode package includes a laser diode, a cooler, and a metallization layer. The laser diode is used for converting electrical energy to optical energy. The cooler receives and routes a coolant from a cooling source via internal channels. The cooler includes a plurality of ceramic sheets and a... Agent: Nixon Peabody LLP

20080025358 - Carrier-suppressed optical pulse train generation method and mode-locked semiconductor laser diode for realizing this method: A CS optical pulse train generation method, which is able to change the half width of an optical pulse constituting a CS optical pulse train, and which is compact and has low power consumption. A distributed Bragg reflector semiconductor laser utilized in this method is one which is constituted comprising... Agent: Rabin & Berdo, PC

20080025359 - Modulated semiconductor dfb laser array with a mems-based rf switch: Many approaches to tunable lasers use an array of DFBs, where each element of the array has a different wavelength. In some operations one element of the array is activated at a time depending on the desired wavelength. For modulated applications, an RF voltage is applied to a specific element... Agent: Christie, Parker & Hale, LLP

20080025360 - Semiconductor layer structure with superlattice: The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations... Agent: Fish & Richardson PC

20080025361 - Linear diode-laser array with series-connected emitters: A longitudinal diode-laser array includes a plurality of diode-laser emitter groups. The emitter groups are mounted on corresponding electrical contacts electrically isolated from each other on a dielectric carrier. The emitter groups are cut from a conventionally formed diode-laser bar bonded to the carrier. The emitter-groups are connected together in... Agent: Stallman & Pollock LLP

20080025349 - External resonator type wavelength-variable laser: To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions.... Agent: Young & Thompson

20080025350 - Wavelength combining using a arrayed waveguide grating having a switchable output: Switchable power combining is provided using a tunable arrayed waveguide grating (AWG) as the combining element. The AWG has two or more inputs and two or more outputs. Each AWG input is bi-directionally coupled to a corresponding laser source, and each laser source has substantially the same gain spectrum. All... Agent: Lumen Intellectual Property Services, Inc.

20080025356 - Scalable zig-zag laser amplifier: A high power laser system is provided having a master oscillator for generating a reference laser beam of desired beam quality, means for dividing the reference beam into multiple sub-beams, a multi-slab gain module positioned to receive the multiple sub-beams as input beams, and means for adjusting the sub-beams in... Agent: Patti, Hewitt & Arezina LLC

20080025362 - Solid-state-laser pumping module: A pumping module includes a solid state laser medium 3 having a light incidence surface 3a which is bonded to a slab waveguide 2 and which accepts pumping light 1 propagating through the slab waveguide 2, for absorbing the pumping light 1 introduced thereinto via the light incidence surface 3a... Agent: Birch Stewart Kolasch & Birch

20080025363 - Optical fiber gain medium with modal discrimination of amplification: An active multimode optical fiber consisting of a first core section (11), a thin barrier layer (12) material having a thickness (d2) and a lower refractive index than that of the first core section by an index difference (Δn), a second core section (13) having a refrective index equal or... Agent: Nixon & Vanderhye, PC

20080019405 - Laser processing device: In the laser processing apparatus 1, a laser head 13 is held and cooled by a cooling jacket 11, and thus can be operated stably. Also, even if the emitting direction of laser light L fluctuates when replacing the laser head 13 because of its damage or the like, a... Agent: Drinker Biddle & Reath (dc)

20080019406 - Vertical external cavity surface emitting laser: An improved Vertical External Cavity Surface Emitting Laser (VECSEL) (1, 22, 27, 29) is described that exhibits improved frequency stability and tuning characteristics when compared with known devices. This is achieved through the employment of an intra cavity heatspreader (18) comprising single crystal diamond that is located with the gain... Agent: Ked & Associates, LLP

20080019407 - Driving device and method: A driving device including a light emitter, a biasing circuit, a light receiver, an automatic control system, and an alternating current (AC) path is disclosed. The light emitter generates an optical signal. The biasing circuit generates a driving signal to activate the light emitter such that the light emitter operates... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20080019408 - Aigainn-based lasers with dovetailed ridge: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.... Agent: Jones, Tullar & Cooper, P.C.

20080019410 - Surface emitting semiconductor device: A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers are alternately arranged, and the first layers are made of dielectric material. The first DBR, semiconductor region and second... Agent: Smith, Gambrell & Russell

20080019411 - Compact sealed-off excimer laser: An excimer laser is disclosed in which a gas-discharge is formed for exciting an excimer-forming lasing-gas mixture. The gas discharge is formed between an elongated anode electrode and a elongated cathode electrode. The anode is in contact with a dielectric surface and the cathode is supported above the dielectric surface,... Agent: Stallman & Pollock LLP

20080019403 - Method and apparatus for coherently combining multiple laser oscillators: A laser apparatus having multiple laser devices coupled together. The laser devices comprise optical fibers with laser active regions. Each of the fibers has a reflector disposed at one end and is connected to a combiner on the other end. A laser pump device for each fiber provides pump energy... Agent: Robert Popa C/o Ladas & Parry

20080019404 - Mode selection and frequency tuning of a laser cavity: A technique for stabilising and scanning a cw-laser cavity (3) is demonstrated. The technique involves the incorporation of an inactivity birefringent etalon (15). Such an etalon provides a means for deriving a polarised electric field component (17) from an intracavity electric field (16) of the laser cavity, the orientation of... Agent: Ked & Associates, LLP

20080019409 - Wavelength -tunable selective optoelectronic filter: A selective and wavelength-tunable optoelectronic filter comprising a resonant cavity placed between two partial reflectors (10, 12) such as Bragg mirrors, the resonant cavity being formed by a disk (16) of solid material having a high refractive index that constitutes a waveguide between the two partial reflectors (10, 12). The... Agent: Alston & Bird LLP

20080019412 - Laser beam injecting optical device for optical fiber: In a shielding case, a condenser lens condenses a laser beam output by a laser oscillator to inject the laser beam into an entrance end face of an optical fiber disposed posterior to a focusing point of the laser beam. Ventilation of an ambient gas in the shielding case is... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20080013575 - Method for manufacturing optical device, and optical device wafer: A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming... Agent: Harness, Dickey & Pierce, P.L.C

20080013580 - Surface-emitting type semiconductor laser and its manufacturing method: A surface-emitting type semiconductor laser has: a light emitting section having a first mirror, an active layer formed above the first mirror and a second mirror formed above the active layer; a support section having layers that are common with the first mirror, the active layer and the second mirror;... Agent: Harness, Dickey & Pierce, P.L.C

20080013581 - Low optical feedback noise self-pulsating semiconductor laser: A self-pulsating semiconductor laser includes a lower clad layer formed on a semiconductor substrate, an active layer formed on the lower clad layer, the first upper clad layer formed on the active layer, a second upper clad layer formed on the first upper clad layer and a block layers. The... Agent: Young & Thompson

20080013584 - Laser assembly for multi-laser appplications: A laser assembly comprises a substrate and two or more lasers. The substrate has a substantially planar surface region and a raised feature. The raised feature comprises two or more reflective surfaces. Each of the two or more lasers is mounted to the substantially planar surface region and is configured... Agent: Ryan, Mason & Lewis, LLP

20080013583 - Optical device and its manufacturing method, and optical device wafer: l

20080013585 - Gas laser oscillating unit: A gas laser oscillating unit having a gas junction part where gas flow may be stable, whereby a stable laser beam output and/or a laser beam that does not fluctuate very much may be achieved. The laser gas, flowing through first and second excitation parts, is introduced into the first... Agent: Lowe Hauptman Ham & Berner, LLP

20080013574 - Laser light source device and image display device: The present invention concerns a laser light source device capable of multiwavelength oscillation. This laser light source device is provided with a laser light source; a laser cavity including a fiber, a first fiber grating provided at a side of the fiber toward the laser light source and having a... Agent: Wenderoth, Lind & Ponack L.L.P.

20080013576 - Semiconductor laser device: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and... Agent: Arent Fox LLP

20080013577 - Light-emitting device driving gear: When an APC selection signal FA is set to H level to start an APC operation, a monitor voltage VA is immediately generated from a monitor voltage generating circuit 16A, and an error voltage VEA corresponding to the difference between the monitor voltage VA and a reference voltage VP is... Agent: Texas Instruments Incorporated

20080013578 - Laser drive device and image forming apparatus incorporating the same: An inexpensive laser drive device which is capable of driving a laser for emission of an appropriate amount of light. Electric currents supplied from a supply current control device formed in an integrated circuit to a plurality of predetermined ports of the integrated circuit are turned on and off by... Agent: Rossi, Kimms & Mcdowell LLP.

20080013579 - Buried-heterostructure semiconductor laser: A 1.3-μm wavelength band buried-heterostructure semiconductor laser includes a semiconductor substrate, a multiple quantum well active layer including quantum well layers and barrier layers, a buried layer in contact with side faces of the multiple quantum well active layer, wherein the barrier layers are made from AlGaInAsP or AlGaInAs, and... Agent: Kratz, Quintos & Hanson, LLP

20080013582 - Semiconductor laser device and method of manufacturing the same: A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that... Agent: Mcdermott Will & Emery LLP

20080013586 - Narrow band diode pumping of laser gain materials: Methods and devices for narrow band diode pumping of various laser gain materials which for some embodiments reduces or eliminates some thermal problems as well as other optical problems associated with diode pumping of crystalline materials, including anisotropic materials. In some embodiments, a VBG is used to narrow the bandwidth... Agent: Grant Anderson LLP C/o Portfolioip

20080013587 - Multiple-reflection delay line for a laser beam and resonator or short pulse laser device comprising a delay line of this type: A multiple-reflection delay line member for a laser beam, including mirror elements for the multiple reflection of the laser beam to reduce the dimensions of a laser resonator at a predetermined optical length, wherein the mirror elements are comprised of two oppositely arranged, longitudinally extending polished surfaces of a glass... Agent: Ostrolenk Faber Gerb & Soffen

20080013588 - Laser oscillator incorporating transverse mode rotation in the laser resonator: A laser oscillator, including an optical resonator, an optical amplifier element on an optical path inside the optical resonator, (i) the optical path in the optical resonator having an even number of optical reflections per resonator circuit or round-trip, (ii) the transverse mode pattern of the laser light in the... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080013589 - Window assembly for a gas discharge laser chamber: A window assembly for a pressurized laser discharge chamber is disclosed and may include a housing that is formed with a recess. The assembly may also include an optic having a first side that is exposed to chamber pressure and an opposed second side, and a compliant member that may... Agent: Matthew K. Hillman Cymer, Inc.

20080008215 - Laser apparatus and method for harmonic beam generation: A second harmonic laser beam is generated by passing a fundamental frequency laser beam through a single second harmonic generator (SHG) crystal more than two and preferably four times, to increase the amount of power converted from the fundamental beam into the second harmonic beam and to increase the overall... Agent: John R Ley, LLC

20080008218 - Illuminating equipment of high-power and clustered light-emitting diodes coupled to high efficiency heat-spreading and heat-dissipating module: The invention discloses a light-emitting diode illuminating equipment. The light-emitting diode illuminating equipment of the invention includes a heat-dissipating plate device, a plurality of heat-dissipating fins, a plurality of diode light-emitting devices, and a plurality of bar-shaped heat-conducting devices with high heat-conducting coefficient. The heat-dissipating fins extend from a surface... Agent: Reed Smith LLP

20080008217 - Laser device including heat sink with a tailored coefficient of thermal expansion: A laser module comprising a laser device attached to a heat sink that is configured to provide a relatively low thermal resistance for thermal management of the laser device, and a coefficient of thermal expansion (CTE) that is substantially matched to the CTE of the laser device for reducing stress... Agent: Orion Law Group

20080008216 - Laser device including heat sink with insert to provide a tailored coefficient of thermal expansion: A laser module comprising a laser device attached to a heat sink that is configured to provide a relatively low thermal resistance for thermal management of the laser device, and a coefficient of thermal expansion (CTE) that is substantially matched to the CTE of the laser device for reducing stress... Agent: Orion Law Group

20080008219 - Surface-emitting type semiconductor laser: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; and an upper mirror formed above the active layer, wherein the upper mirror includes a first region in which a plurality of holes are formed and a second region inside the first region... Agent: Oliff & Berridge, PLC

20080008220 - Semiconductor laser device and manufacturing method thereof: It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type... Agent: Greenblum & Bernstein, P.L.C

20080008221 - Semiconductor laser device: A semiconductor laser device of the invention is provided with: a supporting substrate, on the surface of which there is formed a wiring pattern; a LD that is fixed on the surface of the supporting substrate and that has a signal output section that emits signal laser light and a... Agent: Volentine & Whitt PLLC

20080008222 - Laser irradiation method and apparatus, method for annealing non-single cyrstal, and method for manufacturing semiconductor device: It is an object of the present invention to provide a laser irradiation technique which can keep the stability of the laser oscillator high and which can perform laser process homogeneously by avoiding the adverse effect due to the return light reflected on an irradiation when, for example, crystallizing with... Agent: Nixon Peabody