Coherent light generators inventions 11/07

20070274353 - Laser system architecture and method of using the same: A color dazzle system to enhance area denial to personnel mission for law enforcement, homeland security, border patrol, and the military effectively by interrupting the ability of combatants to continue with their intended mission. The color dazzle system has a multi-wavelength laser module for generate desired color or wavelength ranges... Agent: Stetina Brunda Garred & Brucker

20070274354 - All-optical 2r regenerator using self-seeded laser diode: The present invention is a self-seeded laser diode. The laser diode obtains a gain by itself without using expansive erbium-doped fiber amplifiers. Hence, the cost is reduced and the system is simplified.... Agent: Troxell Law Office PLLC

20070274355 - Laser control apparatus and control method thereof: A laser control apparatus and control method thereof includes multiple laser elements, a photodetector for monitoring optical outputs of the laser elements, a modulation. circuit for modulating with respect to each laser element based on data, a first drive source for applying a bias current to each laser element, a... Agent: Mcginn Intellectual Property Law Group, PLLC

20070274356 - Automatic power control circuits and methods: An automatic power control (APC) circuit applicable to controlling a laser generation module including a laser generator for generating laser and a photosensor for outputting a detection result corresponding to the power of the laser, includes: a comparator, coupled to the photosensor and biased by a first voltage level, for... Agent: North America Intellectual Property Corporation

20070274362 - Semiconductor device: A high-power semiconductor laser chip 39 with a long cavity length is disposed on a side 42 of a Si chip 37 along the long side of a package, thereby reducing the thickness and size of a semiconductor device 30 for integrating the semiconductor laser chip 39 and a light-receiving... Agent: Steptoe & Johnson LLP

20070274363 - Gas laser electrodes shaped in the longitudinal axis: A gas discharge laser includes elongated discharge electrodes having an active surface width that varies along the length of the resonator. In one example each of the electrodes is formed by a row of pins having a circular active surface. The pins are diametrically aligned with the active surfaces generally... Agent: Stallman & Pollock LLP

20070274365 - Periodically complex resonant structures: A method includes, for each desired wavelength of a plurality of desired output wavelengths, selecting a light-emitting resonant structure (LERS) that emits light at the desired wavelength when exposed to a beam of charged particles; and forming the periodically complex resonant structure from the selected light-emitting resonant structures.... Agent: Davidson Berquist Jackson & Gowdey LLP

20070274357 - Methods and devices comprising soluble conjugated polymers: Methods, compositions and articles of manufacture involving soluble conjugated polymers are provided. The conjugated polymers have a sufficient density of polar substituents to render them soluble in a polar medium, for example water and/or methanol. The conjugated polymer may desirably comprise monomers which alter its conductivity properties. In some embodiments,... Agent: Berliner & Associates

20070274358 - Self-pulsation nitride semiconductor laser device and method for fabricating the same: In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity... Agent: Mcdermott Will & Emery LLP

20070274359 - Semiconductor laser device and method of fabricating the same: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover... Agent: Mcdermott Will & Emery LLP

20070274360 - Semiconductor laser element and semiconductor laser device: A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along a predetermined direction and flat portions provided on outer sides in a width direction of the raised portion. The insulating layer... Agent: Ndq&m Watchstone LLP

20070274361 - Vertical-cavity semiconductor optical devices: An optical device comprises: an active semiconductor region (130), for providing gain to signal light (170) passing through said active region (130); a signal-light reflector (120), for reflecting the signal light (170) through the active region (130) in a direction out of the plane of the active region (130); a... Agent: Stout, Uxa, Buyan & Mullins LLP

20070274364 - Laser pumped tunable lasers: A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—where the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches,... Agent: Synnestvedt Lechner & Woodbridge LLP

20070274366 - Optical unit, optical pickup apparatus and optical information-processing apparatus: In an optical pickup apparatus body, an APC light-receiving element is arranged halfway along an optical path between a collimating lens and an objective lens, at a position which is entered by laser light which enters the objective lens and spreads out of an effective diameter D1. The APC light-receiving... Agent: Morrison & Foerster LLP

20070274367 - Optical pickup device: An optical pickup device includes a diffraction grating for separating a light beam from a semiconductor laser into at least three light beams. The diffraction grating is partitioned into five areas each having a given periodic structure: a first area; a second area adjacent to the first area in a... Agent: Mcdermott Will & Emery LLP

20070268940 - Self-contained module for injecting signal into slave laser without any modifications or adaptations to it: A self-contained module injects seeds into a slave laser for applications such as single mode or multimode injection seeding, master oscillator power amplifiers, regenerative amplifiers, optical parametric oscillators, Raman lasers, and LIDAR systems. The injection source provides a continuous wavelength sweeping for master-slave resonance to replace conventional cavity length control... Agent: Pavilion Integration Corporation

20070268944 - Gas purification in an excimer laser using a stirling cycle cooler: An excimer laser includes a laser-gas cleaning apparatus. The gas cleaning apparatus includes a cold-trap supplemented by a heat-exchanger. The cold-trap is cooled by a twin-compressor, free-piston, linear motor-driven Stirling-cycle cooler having an adjustable cooling capacity. The cold-trap, the heat-exchanger, and connecting conduits are enclosed in a housing with free... Agent: Stallman & Pollock LLP

20070268948 - Gallium nitride based semiconductor device with electron blocking layer: A semiconductor device comprises an n-side waveguide layer, an active layer in contact with the n-side waveguide layer and a p-side waveguide layer in contact with the active layer. An electron blocking layer is in contact with the p-side waveguide layer and comprises a first composition of two elements from... Agent: Ryan, Mason & Lewis, LLP

20070268949 - Semiconductor laser: A semiconductor laser according to the present invention comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and... Agent: Leydig Voit & Mayer, Ltd

20070268950 - Low power q-switched solid-state lasers: In a miniature Q-switched, pulsed laser, having a two arm folded resonator, Q-switching is effected by rapidly and reciprocally tilting a resonator mirror of the laser about an axis perpendicular to the axis of the laser resonator. The angular excursion of the tilting and the frequency of the tilting are... Agent: Stallman & Pollock LLP

20070268939 - Wavelength control of an external-cavity tuneable laser: A method of controlling an external-cavity tuneable laser which has a wavelength-elective tuneable mirror, in which wavelength selectivity is achieved by an electrical signal provided by an alternating voltage. The tuneable mirror has a liquid crystal material, a diffraction grating and a planar waveguide optically interacting with the grating. The... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070268941 - Vertical external cavity surface emitting laser and method thereof: A vertical external cavity surface emitting laser (“VECSEL”). The VECSEL includes a light-emitting device, a second harmonic generation (“SHG”) crystal and an external cavity mirror. The light-emitting device includes a mirror layer limiting a resonance region, an active layer generating light, a heat spreader dissipating heat generated in the active... Agent: Cantor Colburn, LLP

20070268942 - Method and system for tunable pulsed laser source: A tunable pulsed laser source comprising a seed source adapted to generate a seed signal and an optical circulator. The optical circulator includes a first port coupled to the seed source, a second port, and a third port. The laser source also includes an amplitude modulator characterized by a first... Agent: Townsend And Townsend And Crew, LLP

20070268943 - High-temperature operation of vertical cavity surface emitting lasers: Embodiments of the present invention provide a system for increasing an operational life of a VCSEL. The system can include control circuitry for reducing an amount of bias current at high temperatures and increasing a power of the laser at low temperatures. This control circuitry can further include at least... Agent: Workman Nydegger

20070268945 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070268946 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070268947 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070268951 - Polarization methods for diode laser excitation of solid state lasers: A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that... Agent: Klarquist Sparkman, LLP

20070263680 - Mopa laser apparatus with two master oscillators for generating ultraviolet radiation: Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 2114 nm, provide trains of optical pulses. The 1064-nm pulses are frequency-quintupled to a wavelength of 213 nm. The 2114-nm pulses are mixed with the 213-nm pulses... Agent: Stallman & Pollock LLP

20070263681 - Clock transfer device: A clock transfer device is designed to perform long-distance transfer of a reference clock, which is generated based on a high-precision frequency standard, toward a remote place. The clock transfer device includes a first mode-locked laser for generating a first optical pulse train having a first repetition frequency and a... Agent: Ostrolenk Faber Gerb & Soffen

20070263685 - Laser diode drive circuit: A laser diode drive circuit includes a first transistor having a collector connected to an anode of a laser diode; a second transistor having a collector connected to a cathode of the laser diode; a constant current circuit connected between a ground point and emitters of the first and second... Agent: Leydig Voit & Mayer, Ltd

20070263686 - High-power optically end-pumped external-cavity semiconductor laser: A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the... Agent: Buchanan, Ingersoll & Rooney PC

20070263693 - Compact efficient and robust ultraviolet: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology... Agent: Stepan Essaian

20070263676 - System comprising a low phase noise waveguide laser, a method of its manufacturing and its use: The invention relates to a system comprising a waveguide laser for exciting laser light at a lasing wavelength λs and a pump for pumping the waveguide laser at a pumping wavelength λp. The invention further relates to a method of providing such a system and its use. The object of... Agent: Buchanan, Ingersoll & Rooney PC

20070263677 - Laser system: In the case where, e.g., because of provision of a high-gain and high-energy Q-switched laser oscillator in a laser system in a MOPA configuration, the duration τz from the time point when oscillation-stage Q switches (13a and 13b) start the gate ON to the time point when a pulse laser... Agent: Sughrue Mion, PLLC

20070263678 - Coherent light source and optical system: An object of the present invention is to provide a coherent light source with limitations on the wavelength of emitted light being relaxed. The coherent light source of the present invention is a coherent light source for simultaneously emitting a first light (3) and a second light (4) having a... Agent: Wenderoth, Lind & Ponack L.L.P.

20070263679 - Mopa laser apparatus with two master oscillators for generating ultraviolet radiation: Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 1547 nm, provide trains of optical pulses. The 1064-nm pulses are frequency-quadrupled to a wavelength of 266 nm. The 1547-nm pulses are first mixed with the 266-nm... Agent: Stallman & Pollock LLP

20070263682 - Methods and systems for the enhancement of terahertz wave generation for analyzing a remotely-located object: A method for generating terahertz radiation includes inducing a background plasma in a volume of a gas by focusing a first optical beam in the volume, and generating pulsed terahertz radiation with enhanced generation efficiency by focusing a second time-delayed optical beam in the background plasma. The method may be... Agent: Heslin Rothenberg Farley & Mesiti PC

20070263683 - Optical apparatus and image forming apparatus: An optical apparatus includes a light source for emitting laser light perpendicularly to a surface of a semiconductor substrate; a positioning member for positioning the light source; an aperture stop defining an opening for limiting transmission of laser light emitted from the light source; a light detection member, provided on... Agent: Fitzpatrick Cella Harper & Scinto

20070263684 - Method and system for cooling and pressurizing an imaging head: A method for cooling and pressurizing a laser imaging head includes the steps of: providing the imaging head with components including a laser source, a light valve for modulating light from the laser source, and optics for transferring an image to a medium; enclosing the imaging head within a non-hermetically... Agent: Agfa Corporation Law & Patent Department

20070263688 - Semiconductor laser with side mode suppression: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does... Agent: Workman Nydegger

20070263687 - Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to... Agent: Dickstein Shapiro LLP

20070263689 - Vertical-cavity, surface-emission type laser diode and fabrication process thereof: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower... Agent: Cooper & Dunham, LLP

20070263690 - Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device... Agent: Leydig Voit & Mayer, Ltd

20070263691 - Semiconductor device and a method of manufacturing a semiconductor device: The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser... Agent: Mark D. Saralino ( Sharp ) Renner, Otto, Boisselle & Sklar, LLP

20070263692 - Gas slab laser: The invention relates to a gas slab laser comprising a gas-filled chamber limited by a housing (1, 2, 3). The laser is provided with at least two high-frequency excited electrodes (5, 6) that extend into the housing and overlap. The electrodes define a discharge chamber (14). The laser is additionally... Agent: Friedrich Kueffner

20070263694 - Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070258492 - Light-emitting resonant structure driving raman laser: In a laser system, a set of substantially coherent electromagnetic radiation is applied as an input to a Raman laser. The Raman laser may be fabricated on the same integrated circuit as the source of the substantially coherent electromagnetic radiation or may be fabricated on a different integrated circuit as... Agent: Davidson Berquist Jackson & Gowdey LLP

20070258493 - Laser power reduction without mode change: A laser system comprises a source, a laser medium, first and second mirrors, a Q-switch, and a control system. The source produces input energy. The laser medium converts the input energy to an output beam. The first and second mirrors are disposed on opposing sides of the laser medium. The... Agent: Nixon Peabody LLP

20070258494 - Wavelength control of laser light: A wavelength control system comprising a wavelength tunable laser, a temperature sensing mechanism and a bias controller responsive to the sensed temperature whereby emission wavelength or the wavelength tunable laser is maintained substantially constant by adjusting the bias applied to the wavelength tunable laser accordingly with temperature.... Agent: Peters Verny , L.L.P.

20070258495 - Semiconductor laser diode, semiconductor optical amplifier, and optical communication device: To provide a semiconductor laser diode and a semiconductor optical amplifier and an optical communication device incorporating the semiconductor laser diode or the semiconductor optical amplifier which enable low power consumption and high optical output. A semiconductor laser diode according to an embodiment of the present invention is a semiconductor... Agent: Sughrue Mion, PLLC

20070258497 - Semiconductor laser diode with a plurality of optical guiding layers: The present application provides a laser diode that enables to reduce the differential resistance. The laser diode of the invention provides first and second guiding layer in an n-side of an active layer. The first guiding layer is put between the active layer and the n-type cladding layer; while, the... Agent: Smith, Gambrell & Russell

20070258496 - Semiconductor laser element and semiconductor laser element array: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type... Agent: Drinker Biddle & Reath (dc)

20070258498 - Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer: A semiconductor laser diode (LD) has been disclosed, where the emission efficiency is independent on a thickness of the p-type cladding layer. The LD provides a first semiconductor region made of group III-V compound semiconductor material, a mesa region and a burying region. The burying region, disposed on the first... Agent: Smith, Gambrell & Russell

20070258499 - Surface-emitting type semiconductor laser: A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a... Agent: Oliff & Berridge, PLC

20070258500 - Light-emitting semiconductor component comprising a protective diode: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode... Agent: Thomas Langer Cohen, Pontani, Lieberman & Pavane

20070258501 - Refined mirror structure for reducing the effect of feedback on a vcsel: A VCSEL is provided that integrates an absorbing layer sandwiched within a null of the standing wave in the emitting mirror to reduce the reflectivity and transmissivity of the emitting mirror as seen by the feedback optical wave, with minimal effect on the reflectivity of the emitting mirror as seen... Agent: Barlow, Josephs & Holmes, Ltd.

20070258502 - Flexible laser safety curtain: A flexible laser safety curtain is disclosed that utilizes a plurality of columns flexibly attached to one another along their longitudinal edges in such a manner as to create a curtain of columns. The base of each column contains a cavity within which at least one moveable element, columnar in... Agent: Pillsbury Winthrop Shaw Pittman LLP

20070253453 - Solid-state laser arrays using: A compact solid-state laser array for nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. The crystals contain dopants such as MgO and/or have a specified stoichiometry. A preferred embodiment comprises a microchip laser cavity that includes a solid-state gain chip, such as Nd:YVO4, which also provides... Agent: Stepan Essaian

20070253457 - Semiconductor laser device and method for fabricating the same: A first semiconductor laser emitting light with a first wavelength and a second semiconductor laser emitting light with a second wavelength are formed on an identical substrate. Each of the semiconductor lasers includes: a doublehetero structure in which at least a first-conductivity-type cladding layer, an active layer and a second-conductivity-type... Agent: Mcdermott Will & Emery LLP

20070253452 - Tunable laser apparatus and methods: A tunable laser has a first optical element spaced apart from a second optical element to form a laser cavity of fixed length there between. An optical gain medium is in at least part of the laser cavity A third optical element is selectively spaced apart from and facing the... Agent: Hewlett Packard Company

20070253454 - Method for optimizing laser diode operating current: A method for optimizing a dc operating drive current of a laser diode is presented. Lasers of a particular type are characterized in terms of the dependency of certain parameters on temperature and of the minimum bias current required for adequate laser speed. The minimum bias current is determined using... Agent: Workman Nydegger

20070253455 - Intelligent laser interlock system: The present invention comprises, in various embodiments, systems and methods for shutting down a laser system in an intelligent and flexible manner. An intelligent laser interlock system includes both hardwired components, and intelligent components configured to execute computing instructions. The hardwired components and the intelligent components are configured to shutdown... Agent: Carr & Ferrell LLP

20070253456 - Method for manufacturing a light-emitting device with a periodic structure in an active region: The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is... Agent: Smith, Gambrell & Russell

20070253458 - Diode pumping of a laser gain medium: An integrated, low profile, high power laser light emission device is disclosed. The integrated laser light emission device provides uniform heat dissipation, as well as uniform pumping of the laser gain medium without the need for a pumping cavity. The laser system includes a pump diode array that can be... Agent: Birch Stewart Kolasch & Birch

20070253459 - Extendable electrode for gas discharge laser: Disclosed herein are systems and methods for extending one or both of the discharge electrodes in a transverse discharge gas laser chamber in which one or both the electrodes are subject to a dimensional change due to erosion. Electrode extension can be performed to increase the chamber life, increase laser... Agent: Matthew K. Hillman Cymer, Inc., Legal Dept.

20070253460 - Inspection chip equipped with a light amplifier element: The present invention provides an inspection chip using light, which is able to provide an irradiation of light at a high precision. The present invention further provides an inspection chip capable of carrying out the inspection of a sample in a simple manner by using a plurality of lights. The... Agent: Birch Stewart Kolasch & Birch