Coherent light generators inventions 09/07

20070223542 - Scanning display device: A scanning display device is disclosed. The scanning display device includes: first to M-th scan mirrors (where M is an integer of at least 2), each of which scans a light signal in a first direction; and a scanning unit for scanning the light signal scanned by each of the... Agent: Mckenna Long & Aldridge LLP

20070223545 - Optical head and an optical record playback equipment: Optical head 1 has heat sink 6. This heat sink 6 has front overhang section 16 (contact part), the 2nd front drooping sections 17a (contact part) and 17b (contact part), the 1st side drooping section 18, side overhang section 19 (contact part), and the 2nd side drooping sections 20a (contact... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070223546 - Red light laser: A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and... Agent: Kinney & Lange, P.A.

20070223550 - Semiconductor laser device and fabrication method therefor: A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has... Agent: Mcdermott Will & Emery LLP

20070223540 - Pulsed laser: The invention concerning a pulsed laser is provided and includes an optical resonator being defined by at least two reflective elements, and the optical resonator defining a laser radiation beam path; the laser further including a solid-state gain structure arranged so as to be in the beam path, the gain... Agent: Rankin, Hill, Porter & Clark LLP

20070223541 - Housing for harmonic generation crystals in solid state laser systems: Apparatus for effecting harmonic conversion of a laser beam of predetermined frequency to provide plural harmonic components of the laser beam at frequencies different from the predetermined frequency, includes a housing (40) defining a hermetically sealed chamber able to be maintained at a pressure below atmospheric pressure. Also provided are... Agent: Foley And Lardner LLP Suite 500

20070223543 - Laterally implanted electroabsorption modulated laser: A monolithically integrated electroabsorption modulated laser having a ridge waveguide structure, has lateral ion implantation. The integrated device has a laser section and a modulator section. The modulator section has ion implanted regions adjacent to the waveguide ridge. The implanted regions penetrate through the top cladding layer to reduce capacitance... Agent: Mark D. Saralino (general) Renner, Otto, Boisselle & Sklar, LLP

20070223544 - Laser beam processing apparatus: This laser processing apparatus includes an amp fiber, a seed laser oscillating unit, a fiber core exciting unit, a laser emitting unit, a controlling unit, a light sensor, etc. A Q-switched pulse seed laser beam from the seed oscillating unit enters into one end surface of the amp fiber, and... Agent: Wenderoth, Lind & Ponack, L.L.P.

20070223548 - Semiconductor laser device: In a semiconductor laser device including a package for airtight sealing, and a semiconductor laser element provided in the package, a moisture concentration inside the package is 2500 ppm or less and arithmetic mean roughness in at least one portion of an inner surface of the package is 0.3 μm... Agent: Ndq&m Watchstone LLP

20070223547 - Semiconductor laser devices and methods: A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base,... Agent: Martin Novack

20070223549 - High-power optoelectronic device with improved beam quality incorporating a lateral mode filtering section: An optoelectronic device includes a planar active element, a vertical waveguide surrounding the active element in the vertical direction, and a lateral waveguide comprising at least one active section and at least one filter section following each other in the longitudinal direction. At least part of the active element within... Agent: Brown & Michaels, PC 400 M & T Bank Building

20070223551 - Superluminescent diode and method of manufacturing the same: A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical... Agent: Ladas & Parry LLP

20070223552 - High efficiency, wavelength stabilized laser diode using awg's and architecture for combining same with brightness conservation: The invention relates to high power semiconductor lasers based on a laser diode array waveguide grating (DAWG) in which the wavelength is stabilized using an array waveguide grating (AWG) in an external cavity configuration. Another aspect of the present invention relates to techniques for efficiently coupling optical gain element arrays... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20070223553 - Laser system with the laser oscillator and the laser amplifier pumped by a single source: An optically-pumped, amplified laser source including a single optical pump. The laser source includes: an optical pump to generate pump light; a laser oscillator adapted to generate laser light when irradiated with the pump light; a laser amplifier coupled to the laser oscillator to receive laser light from the laser... Agent: Ratnerprestia

20070223554 - External cavity laser: Embodiments of systems and methods are provided for a tunable laser device. The tunable laser device may include a diffraction grating connected to a pivot arm that pivots the diffraction grating about a pivot point to tune the laser device. In pivoting the diffraction grating about the pivot point, both... Agent: Jagtiani + Guttag

20070217459 - Semiconductor laser: A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070217462 - Nitride semiconductor laser device and method of producing the same: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in... Agent: Harness, Dickey & Pierce, P.L.C

20070217461 - Nitride semiconductor laser element and method for manufacturing same: A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode form on the ridge and the first protective film, wherein the first protective film... Agent: GlobalIPCounselors, LLP

20070217464 - Laser apparatus and production method of laser apparatus: Provided are a laser apparatus into which a large current can be injected and a production method which enables easy production of the apparatus. A laser apparatus includes a light-emitting region on a substrate, and a periodic refractive index structure containing an i-type material provided at a periphery of the... Agent: Fitzpatrick Cella Harper & Scinto

20070217465 - Semiconductor optical device: A semiconductor optical device includes a GaAs substrate having a surface with periodic projections and recesses for a diffraction grating; a III-V compound semiconductor layer provided on the surface of the GaAs substrate; and an active layer which is made of III-V compound semiconductor containing nitrogen and arsenic as constituent... Agent: Smith, Gambrell & Russell

20070217476 - Optical semiconductor device: An optical semiconductor device includes a semiconductor laser chip, a base for mounting the semiconductor laser chip and a solder layer sandwiched between the top surface of the base and the bottom surface of the semiconductor laser chip. The semiconductor laser chip is warped in upward convex shape.... Agent: Mcdermott Will & Emery LLP

20070217456 - Apparatus and method for stabilizing the frequency of lasers: Method and apparatus are disclosed that enable lasers to be stabilized in absolute frequency to high precision. The principle of operation is to: 1) lock the laser frequency to an etalon transmission resonance, 2) phase modulate the laser beam at a frequency corresponding to the free spectral range of the... Agent: Mcdermott Will & Emery LLP

20070217458 - Nitride semiconductor laser element: The invention discloses that a nitride semiconductor laser element is able to comply with requirement of high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer (205) and a p-type semiconductor layer each laminated... Agent: Nixon & Vanderhye, PC

20070217457 - Optically pumped semiconductor devices for the generation of radiation, their production as well as methods for the strain compensation in the layer successions used within: A new method for the production of strain-compensating semiconductor layers is suggested, as well as its use for the production of strained-controlled semiconductor layer systems and the production of optically pumped semiconductor devices for the production of radiation, preferably long-wave radiation.... Agent: Clark & Brody

20070217460 - Nitride semiconductor device and process for producing the same: A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C)... Agent: Mark D. Saralino (mei) Renner, Otto, Boisselle & Sklar, LLP

20070217463 - Vcsel pumped in a monolithically optical manner and comprising a laterally applied edge emitter: A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The... Agent: Cohen, Pontani, Lieberman & Pavane

20070217466 - Two-dimensional photonic crystal surface light emitting laser: A surface-emitting laser according to the present invention includes a laminated body between a first electrode 471 and a second electrode 472. The laminated body includes an active layer 43 and a two-dimensional photonic crystal 45. The first electrode 471 is ring shaped. A voltage is applied between the first... Agent: Oliff & Berridge, PLC

20070217467 - Laser diode package utilizing a laser diode stack: A laser diode package is provided. The laser diode package includes a plurality of laser diode submount assemblies, each assembly including a submount to which one or more laser diodes are attached. An electrically isolating pad is attached to the same surface of the submount as the laser diode. A... Agent: Patent Law Office Of David G. Beck

20070217468 - Laser diode package utilizing a laser diode stack: A laser diode package is provided, the package including a plurality of laser diode submount assemblies. Each submount assembly includes a submount. At least one laser diode is attached to a front portion of each submount while a spacer, preferably comprised of an electrically isolating pad and an electrical contact... Agent: Patent Law Office Of David G. Beck

20070217470 - Laser diode stack end-pumped solid state laser: An end-pumped solid state laser utilizing a laser diode stack of laser diode subassemblies as the pump source is provided. The laser gain medium of the solid state laser is contained within a laser cavity defined by a pair of reflective elements. Each laser diode subassembly includes a submount to... Agent: Patent Law Office Of David G. Beck

20070217469 - Laser diode stack side-pumped solid state laser: A side-pumped solid state laser utilizing a laser diode stack of laser diode submount assemblies is provided. The laser gain medium of the solid state laser is contained within a laser cavity defined by a pair of reflective elements. Each laser diode submount assembly includes a submount to which one... Agent: Patent Law Office Of David G. Beck

20070217471 - Laser diode stack utilizing a non-conductive submount: A laser diode package is provided, the package including a plurality of laser diode submount assemblies. Each laser diode submount assembly includes a submount comprised of a non-conductive material. At least one laser diode is attached to a first portion of one surface of each submount while a spacer is... Agent: Patent Law Office Of David G. Beck

20070217473 - Laser equipment: A laser equipment includes: a surface emitting laser for emitting an excitation light; a light converter for outputting an output light by receiving the excitation light; and a lens portion for collimating or concentrating a light. The surface emitting laser has an emitting surface for emitting the excitation light, and... Agent: Posz Law Group, PLC

20070217474 - Laser equipment: A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both... Agent: Posz Law Group, PLC

20070217472 - Vcsel semiconductor devices with mode control: A surface emitting laser having a substrate with top and bottom surfaces; a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate; and active layer disposed over the first stack; a second stack of mirror layers of alternating indices of refraction... Agent: Casey Toohey Emcore Corporation

20070217475 - Solid-state suspension laser: A laser. The novel laser includes a gain medium, a pump source adapted to optically excite the gain medium in a first location, and a resonator adapted to extract energy from the gain medium in a second location distinct from the first location. In an illustrative embodiment, the gain medium... Agent: Raytheon Company Patent Docket Administration

20070211776 - Semiconductor laser having improved facets of the resonator: In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric film on the first facet. The oscillating wavelength of the laser light is λ and the refractive index... Agent: Leydig Voit & Mayer, Ltd

20070211771 - Surface phonon-polariton raman laser: An optical device includes an input optical source that provides and optical signal to the optical device. A surface phonon polariton (SPP) nanostructure receives the optical signal that interacts with the SPP nanostructure to excite a Raman process and produce a Raman light signal. The Raman light signal comprises a... Agent: Gauthier & Connors, LLP

20070211772 - Phase-control in an external-cavity tuneable laser: A single-mode external-cavity tuneable laser includes a gain medium, a tuneable element and a channel allocation grid element. The channel allocation grid element is preferably an FP etalon which is structured and configured to define a plurality of equally spaced transmission peaks corresponding to the ITU channel grid, e.g., 200,... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070211774 - Nonlinear optical crystal optimized for ytterbium laser host wavelenghts: A material for harmonic generation has been made by substitutional changes to the crystal LaCa4 (BO3)3 also known as LaCOB in the form Re1xRe2yRe3zCa4(B03)3O where Re1 and Re2, (rare earth ion 1 and rare earth ion 2) are selected from the group consisting of Sc, Yttrium, La, Ce, Pr, Nd,... Agent: Michael C. Staggs Assistant Laboratory Counsel

20070211773 - Ultraviolet laser system and method having wavelength in the 200-nm range: An apparatus and method applicable for generating ultraviolet laser light having a wavelength in the 200-nm range and/or 250-nm range; in some embodiments, using a single fiber laser pump source (in some embodiments, a pulsed source). In some embodiments, the invention provides methods of generating 250-nm or 200-nm photons using... Agent: Lemaire Patent Law Firm, P.l.l.c.

20070211775 - Semiconductor laser and method of manufacture: Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optical feedback means formed by a plurality of... Agent: Brooks & Cameron, PLLC

20070211777 - Laser diode array beam translator: A laser diode array beam translator includes a laser diode array having a number of spaced-apart laser elements, or diodes, each emitting laser radiation. The typical laser diode array laser elements are rectangular in shape, and linearly spaced apart along an axis with the long dimensions of the element along... Agent: Cooley Godward Kronish LLP Attn: Patent Group

20070211778 - Laser assembly with integrated photodiode: A laser assembly comprises a substrate, one or more standoffs and a semiconductor laser. The substrate has a first doped region and a second doped region. The second doped region is proximate to an upper surface of the substrate and forms a pn junction with the first doped region. The... Agent: Ryan, Mason & Lewis, LLP

20070211779 - Single crystal laser material and system containing the same material: The invention relates to laser materials and specifically to single crystal active media for solid state lasers operating in the middle-infrared (Mid-IR) 4-5 μm range of optical spectrum, wherein a cross section of stimulated emission and laser wavelength is shifted to the range of atmospheric transparency with a single crystal... Agent: Lackenbach Siegel, LLP

20070206647 - Dispersion managed fiber stretcher for high-energy short pulse femotosecond fiber laser system: A fiber Chirped Pulse Amplification (CPA) laser system that includes a fiber mode-locking oscillator for generating a seed laser for projecting to a stretcher for generated a pulse-stretched laser for projecting to a multiple stage amplifier. The multiple stage amplifier further amplifying said laser for projecting to a compressor for... Agent: Bo-in Lin

20070206648 - Thin-film evaporative cooling for side-pumped laser: A system and method are provided for cooling a crystal rod of a side-pumped laser. A transparent housing receives the crystal rod therethrough so that an annular gap is defined between the housing and the radial surface of the crystal rod. A fluid coolant is injected into the annular gap... Agent: National Aeronautics And Space Administration Langley Research Center

20070206650 - Optical sensor using a laser mounted on top of a semiconductor die: A semiconductor device comprising an integrated circuit die and an electronic component mounted to the integrated circuit dies wherein the electronic component comprises a light emitting active area arranged to emit light.... Agent: Michael T. Moore Cypress Semiconductor Corp.

20070206649 - High repetition rate laser module: A laser module includes an electrical connector; a laser diode coupled to the electrical connector through a transmission line; and an optical coupler in optical communication with an optical output of the laser diode. A matching impedance is connected in series with the laser diode, downstream of the laser diode,... Agent: Dinsmore & Shohl LLP

20070206651 - Light emitting diode structure: Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an... Agent: Lin & Associates Intellectual Property, Inc.

20070206652 - Matched impedance controlled avalanche driver: Controlled avalanche driver circuits and apparatuses for gas lasers. One embodiment typically delivers short, rapid, high voltage ionizing pulses in combination with an electric field whose magnitude is too low to sustain a normal glow discharge. The plasma is typically impedance matched with the pulse-forming network. Pre-ionization pulses may be... Agent: Peacock Myers, P.C.