Coherent light generators inventions 08/07

20070201524 - Semiconductor laser device: In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and... Agent: Mcdermott Will & Emery LLP

20070201526 - Vertical cavity surface emitting laser: A vertical cavity surface emitting laser includes a cavity formed by a pair of reflectors on a substrate and an active region interposed in the cavity. In the vertical cavity surface emitting laser, at least one of the reflectors that form the cavity has a refractive index periodic structure produced... Agent: Fitzpatrick Cella Harper & Scinto

20070201527 - Vertical cavity surface emitting laser: In a vertical cavity surface emitting laser including a cavity structure formed by arranging a first reflector (102), an active region (104) and a second reflector (107) on a substrate, the second reflector is formed to include a refractive index periodic structure having a first medium showing a first refractive... Agent: Fitzpatrick Cella Harper & Scinto

20070201528 - Vertical cavity surface emitting laser and method of manufacturing two-dimensional photonic crystal of vertical cavity surface emitting laser: A vertical cavity surface emitting laser includes an active layer between a first reflector and a second reflector and at least either the first reflector or the second reflector includes a two-dimensional photonic crystal. The two-dimensional photonic crystal has a structure 106 showing an ununiform effective refractive index distribution in... Agent: Fitzpatrick Cella Harper & Scinto

20070201530 - Optical active device and optical module using the same: Provided are an optical active device and optical module using the same The optical active device includes first face through which light received emitted, second face facing the first face third face adjacent the first face and the second face, and fourth face facing the third face which width between... Agent: Cha & Reiter, LLC

20070201517 - Junction structure for connecting two profiles in a vehicle support frame: The invention relates to a junction structure for connecting two profiles(1, 2), especially in a vehicle support frame. The first profile (1) has at least two planar, parallel sides and the second profile (2) comprises two parallel, opposite girders (3, 4) and at least one strip (5, 6) connecting the... Agent: Proskauer Rose LLP Patent Department

20070201518 - High efficiency, high power cryogenic laser system: A fiber laser system and a related method for its use, in which one or more fiber laser amplifiers are cryogenically cooled and optimized to operate at a desirably high efficiency. Versions of the laser system using either thulium or erbium doped fibers are disclosed. In a high power version... Agent: Tarolli, Sundheim, Covell & Tummino L.L.P.

20070201520 - Compact high output power mid-infrared emitter system and method: A mid-infrared emitter sub-system includes a heat sink and a diamond thermal diffusion layer connected to the heat sink through a first thermal bonding layer. The first thermal bonding layer has a first melting point. A semiconductor slab portion of a semiconductor laser is connected to the diamond thermal diffusion... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20070201521 - Laser element driving apparatus: A laser element driving apparatus includes a laser element that varies the light intensity corresponding to the current that flows thereto; a photodetection element that monitors and converts the light intensity of the laser element to electric signals; an emission control switch that controls the current that flows to the... Agent: Rohm Co., Ltd. C/o Keating & Bennett, LLP

20070201522 - Densely stacked and strain-compensated quantum dot active regions: Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot active region and a strain-compensation region, and a cap layer. The strain-compensation region is formed to eliminate the compressive strain... Agent: Mh2 Technology Law Group

20070201523 - Pnp light emitting transistor and method: A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an... Agent: Martin Novack

20070201525 - Vertical cavity surface emitting laser having strain reduced quantum wells: A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region.... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070201529 - Optical oxygen laser and method: An optical oxygen laser has a source of oxygen. A cryoreactor has an input connected to the source of oxygen. An optical pump is coupled to the cryoreactor and excites the oxygen to form an singlet delta oxygen, an excited state of oxygen. An optical resonator cavity receives the excited... Agent: Law Office Of Dale B. Halling, LLC

20070201532 - Longitudinally pumped solid state laser and methods of making and using: A laser apparatus for producing a laser light beam can include a gain medium; a pump light source to provide a pump light beam to the gain medium; a first reflector disposed between the first gain medium and the first pump light source and spaced apart from a gain portion... Agent: Darby & Darby P.C.

20070201531 - Optically pumped semiconductor laser device: An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1)... Agent: Cohen, Pontani, Lieberman & Pavane

20070195834 - Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device: A laser irradiation apparatus and a method of laser irradiation which can improve use efficiency of a laser beam, eliminate an influence of stray light at a DMD, and form an irradiation pattern with a homogeneous beam spot are provided. The laser irradiation apparatus includes at least a laser oscillator,... Agent: Eric Robinson

20070195836 - Active spectral control of duv light source: According to aspects of an embodiment of the disclosed subject matter, a line narrowed high average power high pulse repetition laser micro-photolithography light source bandwidth control method and apparatus are disclosed which may comprise a bandwidth metrology module measuring the bandwidth of a laser output flight pulse beam pulse produced... Agent: William C. Cray Cymer, Inc., Legal Dept.

20070195838 - Wide temperature range uncooled transcever module for uncontrolled environments: A laser transmitter within an optical transceiver includes a heating element. The heating element is coup led to the laser package and is controlled to allow the laser to be heated to a higher temperature than the ambient temperature when low environmental temperature extremes occur. The transmitter includes a semiconductor... Agent: Barlow, Josephs & Holmes, Ltd.

20070195844 - High power semiconductor laser device: In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second... Agent: Mcdermott Will & Emery LLP

20070195845 - Laser diode and method of manufacturing the same: A laser capable of improving surge withstand voltage by preventing damage to a read end surface, and a method of manufacturing the same are provided. A laser diode includes a laser resonator between a first end surface as a main emmission end surface and a second end surface facing the... Agent: Rader Fishman & Grauer PLLC

20070195843 - Nitride semiconductor laser device and method for fabricating the same: A nitride semiconductor laser device has a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer; and a current blocking layer having an opening for confining a current flowing to the active layer. In the buried type structure, a regrown layer... Agent: Mcdermott Will & Emery LLP

20070195851 - Semiconductor laser diode having ridge: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of... Agent: Buchanan, Ingersoll & Rooney PC

20070195833 - Angular laser control: A control unit for controlling a laser unit comprising a laser gain medium and an external cavity having a reflecting dispersion device. The laser gain medium is adapted for providing a first beam towards the reflecting dispersion device, the reflecting dispersion device is adapted for receiving the first beam and... Agent: Ohlandt, Greeley, Ruggiero & Perle, LLP

20070195835 - Fast loop laser diode driver: A laser diode driver device including fast-loop driver portion and a closed-loop driver portion to provide current to a laser diode.... Agent: Fliesler Meyer LLP

20070195837 - Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device: It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part... Agent: Nixon Peabody, LLP

20070195839 - Laser system: A laser discharge, where the laser discharge can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.... Agent: Nixon & Vanderhye, PC

20070195840 - System and method for control of optical transmitter: A system and method for controlling an optical transmitter. Proximate to startup of the optical transmitter, the laser bias to the optical transmitter is increased from a minimum to a setpoint according to a predefined function. After the laser bias setpoint is reached, the electrical modulation amplitude is increased from... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070195841 - Charge neutralization in semiconductor structures: A method for neutralizing trapped charges in a buried oxide layer. The method includes providing a semiconductor structure which includes (a) a semiconductor layer, (b) a charge accumulation layer on top of the semiconductor layer, and (c) a doped region in direct physical contact with the semiconductor layer, wherein the... Agent: Schmeiser, Olsen & Watts

20070195846 - Semiconductor laser and process for manufacturing the same: This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate... Agent: Mcdermott Will & Emery LLP

20070195842 - Semiconductor laser element and manufacturing method thereof: In an element wherein a plurality of ridges (16, 36) are arranged in parallel, supports (17, 37) are formed to sandwich each of the ridges (16, 36). More specifically, on an outer side of the ridge (16) in the element, the first support (17a) is formed, and on an inner... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070195848 - Nitride semiconductor laser device having current blocking layer and method of manufacturing the same: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window 32 formed... Agent: Wenderoth, Lind & Ponack, L.L.P.

20070195847 - Semiconductor laser diode and integrated semiconductor optical waveguide device: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a... Agent: Reed Smith LLP

20070195849 - Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating: In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which... Agent: Leydig Voit & Mayer, Ltd

20070195850 - Diode laser array stack: A light generating apparatus is operably coupled to an optical fiber (10) with a cladding (5) and a core (4) defining a core diameter. The optical fiber (10) has a numerical aperture, and the product of the numerical aperture of the fiber and one-half the diameter of the core (4)... Agent: Fish & Richardson PC

20070189340 - Optical fiber laser: To provide a low-cost, high reliability and high-powered operation enabled optical fiber laser, in the optical fiber laser for oscillating a laser light by introducing an excitation light for exciting the rare earth elements into the optical fiber doped partially by the rare earth elements, the optical fiber is wrapped... Agent: Mattingly, Stanger, Malur & Brundidge, P.C.

20070189352 - Light emitting device: A light emitting device, comprises: a light source that emits excitation light; a light guide that propagates the excitation light, and in which the refractive index of the center part (core) of a cross section is higher than the refractive index of the peripheral part (cladding); a wavelength conversion member... Agent: GlobalIPCounselors, LLP

20070189339 - Fiber laser beam processing apparatus: The fiber laser beam processing apparatus includes a fiber laser oscillator, a laser power source unit, a laser injecting unit, a fiber transmission system, a laser beam irradiating unit, a processing table, etc. The fiber laser oscillator includes an optical fiber for oscillation, an electric optical pumping unit that applies... Agent: Wenderoth, Lind & Ponack, L.L.P.

20070189338 - White light solid-state laser source: Red light and green light are generated by passing a beam of plane-polarized blue light sequentially through two resonators each including a praseodymium-doped gain medium. A portion of the blue light is absorbed in the gain media and optically pumps the gain-media. Green light is generated in the first resonator... Agent: Stallman & Pollock LLP

20070189342 - Suppression of mode-beating noise in a q-switched pulsed laser using novel q-switch device and applications: A novel Q-switch device enables significant quality and value improvement for a Q-switched laser system by achieving a significant reduction of mode-beating noise during the pulsed output. The origin of mode-beating noise in a Q-switched laser is a result of high gain availability and amplification of competing standing-waves in formation,... Agent: Smart And Biggar

20070189341 - System and method for providing chirped electromagnetic radiation: A system and method for controllably chirping electromagnetic radiation from a radiation source includes an optical cavity arrangement. The optical cavity arrangement enables electromagnetic radiation to be produced with a substantially linear chirp rate and a configurable period. By selectively injecting electromagnetic radiation into the optical cavity, the electromagnetic radiation... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070189343 - White light solid-state laser source with adjustable rgb output: Red light and green light are generated by passing portions of a beam of plane-polarized blue light through two resonators each including a praseodymium-doped gain-medium. One of the resonators generates green light and the other resonator generates red light in response to absorption of the blue light by the gain-medium.... Agent: Stallman & Pollock LLP

20070189344 - Modulator-integrated light source and its manufacturing method: An inexpensive and compact modulator-integrated light source is capable of obtaining an extinction ratio of 10 dB sufficient for use in optical communication without requiring an amplifier or temperature regulating mechanism. The modulator-integrated light source is composed of a semiconductor laser and modulator integrated on high-resistance semiconductor substrate 1. The... Agent: Young & Thompson

20070189345 - Apparatus and method for controlling power of laser diode: An apparatus and method for controlling power of a laser diode (LD) are provided, which allow the power of the laser diode (LD) affecting a performance of an optical recording apparatus to be constantly maintained at an optimum state, regardless of a variation in temperature. The method for controlling power... Agent: Stein, Mcewen & Bui, LLP

20070189346 - Solid-state laser apparatus: In a solid-state laser apparatus 1, a coolant circulating through flow paths 12a, 12b comes into direct contact with a pair of reflecting end faces 5a, 5b of a solid-state laser medium 3, whereby the laser medium 3 heated by pumping light emitted from semiconductor lasers 9 can efficiently be... Agent: Drinker Biddle & Reath (dc)

20070189347 - Method and apparatus for material processing: An apparatus processes a surface of an inhabitable structure. The apparatus includes a laser base unit adapted to provide laser light to an interaction region, the laser light removing material from the structure. The laser base unit includes a laser generator and a laser head coupled to the laser generator.... Agent: Knobbe Martens Olson & Bear LLP

20070189348 - Laser source with broadband spectrum emission: A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably ≧15 nm) spectrum of emission and a high output power (preferably ≧100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region,... Agent: Brown & Michaels, PC 400 M & T Bank Building

20070189349 - Single mode laser: A laser comprising a lasing cavity, having a lasing medium and primary optical feedback means in the form of a facet at either end of the cavity is described. The laser includes secondary optical feedback means in the form of one or more effective refractive index perturbations in the lasing... Agent: Brooks & Cameron, PLLC

20070189350 - Surface emitting laser with an integrated absorber: A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a... Agent: Intel/blakely

20070189351 - Liquid laser with colloidal suspension of lasant nanoparticles: A laser utilizing a liquid based lasing medium, comprising a colloidal suspension of selected solid state lasant nanoparticles in a selected liquid. Use of sufficiently small lasant nanoparticles allows relaxation of the requirement to match the refractive indices of the lasant and the liquid because the nanoparticles have a desirably... Agent: Tarolli, Sundheim, Covell & Tummino L.L.P.

20070189353 - Waveguide laser having reduced cross-sectional size and/or reduced optical axis distortion: Certain example embodiments of this invention relate to waveguide lasers (e.g., RF-excited waveguide lasers). Certain example embodiments of this invention provide combined waveguide cover and non-coupled top electrodes, and/or heat load balancing vacuum vessels including multiple (e.g., two or more) chambers. In certain example embodiments, RF energy may couple through... Agent: Nixon & Vanderhye, PC

20070183466 - Laser display device: A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in... Agent: Buchanan, Ingersoll & Rooney PC

20070183469 - Nitride based semiconductor laser diode: A nitride based semiconductor laser diode is provided. The nitride based semiconductor laser diode includes: a lower contact layer, a lower clad layer, an active layer, and an upper clad layer sequentially stacked on a substrate, wherein the refractive index of the lower clad layer is equal to or greater... Agent: Buchanan, Ingersoll & Rooney PC

20070183472 - Vertical-cavity surface emitting laser: A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light,... Agent: Cha & Reiter, LLC

20070183464 - Articles comprising an optical fibre with a fibre bragg grating and methods of their production: The invention relates to an article comprising a length of an optical fibre and a package, the optical fibre comprising a fibre Bragg grating dispersed over a FBG-section of the length of the optical fibre, the package comprising a carrier with a carrier surface for supporting at least a supported... Agent: Buchanan, Ingersoll & Rooney PC

20070183465 - Method and system for continuous sweeping of a tunable laser: The invention relates to a method and system for providing a set of continuous tuning regions from a discontinuously tuned laser, by providing a wavelength reference having at least first and second resonance peaks, sweeping the laser across a pre-determined wavelength range of the wavelength reference, and defining, within the... Agent: Mcdonnell Boehnen Hulbert & Berghoff LLP

20070183467 - Method and apparatus for cooling semiconductor pumped lasers: A laser system having a cooling apparatus is disclosed. The laser system includes a resonator, a gain medium and multiple heat-absorbing discs. The resonator is formed by a first mirror and a second mirror. The gain medium, which is contained within the resonator, is collectively formed by a group of... Agent: Dillon & Yudell LLP

20070183468 - Automatic power control filter circuit and optical disc device: An automatic power control filter circuit which outputs a signal corrected to make a laser drive current for driving a laser light emitting element irradiating an optical disc with a laser beam become a desired value, on the basis of a signal obtained by sampling and holding a light emission... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070183470 - Distributed feedback semiconductor laser: A distributed feedback semiconductor laser comprises a first cladding layer, a first optical guide layer, an active layer, a second optical guide layer, an InP semiconductor layer, an InGaAsP semiconductor layer, and a second cladding layer. The first optical guide layer is provided on the first cladding layer. The active... Agent: Smith, Gambrell & Russell

20070183471 - Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material: A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index spacer [400] sandwiched between two quarter wave stacks [410, 420]. The low-index spacer has a high-index subspacer layer [470]... Agent: Lumen Intellectual Property Services, Inc.

20070183473 - Light source module: A light source module for use in display systems is provided herein. According to one exemplary embodiment, the light source module includes a plurality of coherent light sources, and a diffraction grating in optical communication with the coherent light source, the diffraction grating being configured to provide feedback to the... Agent: Hewlett Packard Company

20070183474 - Laser with spectral converter: A laser with a spectral converter. The novel laser includes a spectral converter adapted to absorb electromagnetic energy in a first frequency band and re-emit energy in a second frequency band, and a laser gain medium adapted to absorb the re-emitted energy and output laser energy. The spectral converter includes... Agent: Patent Docket Administration Raytheon Systems Company

20070177637 - Tunable optical filter and external-resonator-type semiconductor laser device using the same: In order to reduce the sizes of a tunable optical filter and an external-resonator-type tunable semiconductor laser device, the filter includes: a silicon substrate; a glass substrate which is disposed opposed to the face of the silicon substrate and is equipped with a transparent electrode layer provided over the face... Agent: Hall, Vande Sande & Pequignot, LLP

20070177640 - Practical approach for one mj femtosecond fiber laser: A fiber Chirped Pulse Amplification (CPA) laser system includes a fiber mode-locking oscillator for generating a laser and stretching into a few hundreds ps-10 ns pulse by a fiber stretcher for projecting into an acoustic-optic (AO) functioning as a pulse picker for generated a modulated laser with a reduced repetition... Agent: Bo-in Lin

20070177643 - Reduction of pulse width by spectral broadening in amplification stage and after amplification stage: This invention discloses a fiber Chirped Pulse Amplification (CPA) laser system. The system includes a fiber mode-locking oscillator for generating a seed laser. The laser system further includes a stretching stage for stretching the seed laser for projecting to an Yb doped amplifier. The Yb doped amplifier is implemented for... Agent: Bo-in Lin

20070177645 - Semiconductor laser device: A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type, wherein a band gap in the buffer... Agent: Morrison & Foerster LLP

20070177646 - Semiconductor laser diode: A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one... Agent: Morrison & Foerster LLP

20070177649 - Gas laser oscillator and method of measuring laser gas replacement amount: A gas laser oscillator includes a supply-side valve for regulating a laser gas supply to a gas chamber, an exhaust-side valve for regulating a laser gas exhaust from the gas chamber, a gas pressure measuring device for measuring a pressure in the gas chamber, and a control device functioning as... Agent: Drinker Biddle & Reath (dc)

20070177638 - Frequency-doubled solid state laser optically pumped by frequency-doubled external-cavity surface-emitting semiconductor laser: A laser-resonator includes a praseodymium-doped crystal gain-medium optically pumped by plane-polarized blue light delivered by a frequency-doubled, external cavity, surface-emitting semiconductor laser. The laser-resonator generates fundamental radiation at one of several possible wavelengths between about 500 nm and 750 nm. The fundamental wavelength generated is determined by a wavelength-selective element... Agent: Stallman & Pollock LLP

20070177639 - Wavelength converting optical system, laser light source, exposure apparatus, mask examining apparatus, and macromolecular crystal lens machining device: A fifth harmonic wave is formed from a fundamental wave of p-polarized light via a second harmonic wave forming optical element 3, a third harmonic wave forming optical element 4, and a fifth harmonic wave forming optical element 6 and a second harmonic wave of p-polarized light is formed from... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070177641 - Nonlinear polarization pulse shaping model locked fiber laser at one micron with photonic crystal (pc), photonic bandgap (pbg), or higher order mode (hom) fiber: A fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump, wherein the laser cavity further includes a normal dispersion fiber segment with a β″>0 where β″ representing a fiber dispersion, and an anomalous dispersion fiber segment with the β″<0 for... Agent: Bo-in Lin

20070177642 - Achieving ultra-short pulse in mode locked fiber lasers by flattening gain shape: A fiber laser cavity that includes a fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump. The fiber laser cavity further includes a positive dispersion fiber segment and a negative dispersion fiber segment for generating a net negative dispersion for... Agent: Bo-in Lin

20070177644 - Highly directional light emitting diode using photonic bandgap waveguides: Edge-emitting light source and method for fabricating an edge-emitting light source. The edge-emitting light source includes a photonic crystal having at least one waveguide region. An edge-emitting semiconductor structure having a light emitting active layer is incorporated within the at least one waveguide region. Light emitted by the edge-emitting semiconductor... Agent: Kathy Manke Avago Technologies Limited

20070177647 - Surface-emitting laser light source using two-dimensional photonic crystal: The present invention intends to provide a surface-emitting laser light source capable of generating a linearly polarized laser light having a single-lobed beam profile that takes the largest intensity value in its central area. A two-dimensional photonic crystal consisting of a plate member 31 with holes 311 or 312 arranged... Agent: Oliff & Berridge, PLC

20070177648 - Multiple wavelengths semiconductor laser device: In one aspect of the present invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, and a second semiconductor laser element... Agent: Banner & Witcoff, Ltd. Attorneys For Client No. 000449, 001701