Coherent light generators inventions 07/07

20070171948 - Semiconductor laser having an improved stacked structure: An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second... Agent: Leydig Voit & Mayer, Ltd

20070171950 - Semiconductor laser device with small variation of the oscillation wavelength: A semiconductor laser has a structure in which the following layers are stacked on one another over an n-type substrate: a buffer layer, a diffraction grating layer, a diffraction grating burying layer, a light confining layer, a multiple quantum well active layer, a light confining layer, and a cladding layer.... Agent: Leydig Voit & Mayer, Ltd

20070171951 - Vertical external cavity surface emitting laser (vecsel) having modulating mirror and display apparatus employing the same: A vertical external cavity surface emitting laser (VECSEL) having an improved mirror that forms an external cavity to modulate an emitted laser beam and display apparatus employing the same are provided. The VECSEL includes: a pumping light source; a laser chip that is excited by a pump beam emitted by... Agent: Buchanan, Ingersoll & Rooney PC

20070171952 - Excimer laser and line narrowing module: An excimer laser and a line-narrowing module capable of increasing and maximizing production yield in semiconductor manufacturing are disclosed. The line-narrowing module utilizes a beam expander that passes laser light, produced by and incident from a generator of the excimer laser and collimates the laser light in one direction. A... Agent: Volentine & Whitt PLLC

20070171953 - Led-based optical pumping for laser light generation: Laser light generating solutions are provided that use one or more light emitting diodes to optically pump a laser light generating structure. The laser light generating structure can include organic or inorganic laser material. The light emitting diodes can be located on the same substrate as the laser light generating... Agent: Hoffman Warnick & D'alessandro, LLC

20070171945 - Ultrahigh energy short pulse lasers: A Chirped pulse amplification (CPA) fiber laser system. The CPA fiber laser system includes a fiber mode-locking (ML) oscillator implemented as a cavity dumped ML oscillator including a cavity dumper for generating a seed laser at a reduced repetition rate to project to a pulse stretcher for stretching a pulse... Agent: Bo-in Lin

20070171946 - Optical transmitter circuit: A first peaking current generating section 1 generates a first peaking current P1 in synchronism with the transitions of a digital signal S, being positive at the rising edge and negative at the falling edge. A second peaking current generating section 3 generates a second peaking current P2 in synchronism... Agent: Wenderoth, Lind & Ponack L.L.P.

20070171947 - Diode laser electrical isolation system: A system is provided that electrically isolates a diode laser when the health of the diode laser deteriorates past a preset value. In addition to the diode laser and its power supply, the system includes a monitoring system that monitors the voltage across the diode laser and/or the voltage across... Agent: Patent Law Office Of David G. Beck

20070171949 - Laser diode and semiconductor light-emitting device producing visible-wavelength radiation: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a... Agent: Dickstein Shapiro LLP

20070165682 - Widely-tunable laser apparatus: A widely-tunable laser apparatus comprises a plurality of tunable lasers having different ranges that overlap to encompass a desired operating range of wavelengths (for example from 1250 nm to 1650 nm) of the widely-tunable laser apparatus. The tunable lasers are tunable synchronously and selectively with their respective outputs connected in... Agent: Adams Patent & Trademark Agency

20070165683 - Green laser optical module: A green laser optical module includes a pumping laser, a solid-state laser, and a second harmonic generator. The pumping laser generates excitation light. The solid-state laser is excited by the excitation light and generates first light in an infrared wavelength band. The second harmonic generator converts the first light into... Agent: Cha & Reiter, LLC

20070165686 - Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method: An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP cladding layer 14 and a p-type GaAs cap layer 16 are formed on an n-type GaAs substrate... Agent: Morrison & Foerster LLP

20070165690 - Vertical external cavity surface emitting laser: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and... Agent: Buchanan, Ingersoll & Rooney PC

20070165689 - Vertical external cavity surface emitting laser (vecsel): The VECSEL includes: a heat spreader dissipating generated heat; a laser chip that is disposed on the heat spreader and is excited by a pump beam of a predetermined wavelength to emit a beam of a first wavelength; a Second Harmonic Generation (SHG) crystal that is disposed on the laser... Agent: Buchanan, Ingersoll & Rooney PC

20070165684 - Semiconductor laser device, method for manufacturing the same and optical pickup apparatus: A semiconductor laser chip is mounted on one surface of an electrode lead for chip mounting having a heat release region for releasing heat around the semiconductor laser chip. Therefore, it is possible to release heat of the semiconductor laser chip to the chip mounting lead and release the heat... Agent: Morrison & Foerster LLP

20070165685 - Semiconductor laser device and laser projector: According to the present invention, in a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a... Agent: Wenderoth, Lind & Ponack L.L.P.

20070165687 - Laser oscillation elements: A laser oscillation element 1 according to the invention comprises a cholesteric liquid crystal layer 2 containing cholesteric liquid crystals, a cholesteric liquid crystal layer 3 containing cholesteric liquid crystals facing the cholesteric liquid crystal layer 2, and a defect layer 4 containing a dye 5 which emits fluorescence upon... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070165688 - Light source cable of lasing that is wavelength locked by an injected light signal: Various methods, systems, and apparatuses are described in which a light source (101) capable of lasing is wavelength locked by an injected light signal. The light source (101) capable of lasing, such as a Fabry-Perot laser diode, may have antireflective coating on one or more facets of the light source... Agent: Blakely Sokoloff Taylor & Zafman

20070160091 - Continuous wave supercontinuum light source and medical diagnostic apparatus using the same: Disclosed are a continuous wave supercontinuum laser source resonator using low-priced multimode semiconductor lasers as pumping light and applying a rare-earth doped optical fiber and a Highly Nonlinear Dispersion Shifted Fiber (HNL-DSF) to a ring resonator structure to embody a continuous wave supercontinuum light source, and a medical diagnostic apparatus... Agent: Mckenna Long & Aldridge LLP

20070160096 - Laser light irradiation apparatus and laser light irradiation method: Laser light is emitted from a laser oscillator, and the laser light is made to enter a beam expander optical system including a concave lens through a correction lens. The laser oscillator, the correction lens and the concave lens are disposed so that, when an emission point of the laser... Agent: Nixon Peabody, LLP

20070160105 - Distributed feedback laser diode and a method for manufacturing the same: The present invention is to provide a DFB-LD with a larger coupling efficiency between the grating and the active layer. The DFB-LD of the invention provides an n-type InP substrate, an n-type InP buffer layer, an AlGaInAs layer, a intermediate layer made of a material belonging to a group III-V... Agent: Smith, Gambrell & Russell

20070160092 - Broad-band light source: So far the spectrum of the SC light has been limited to a certain wavelength band. To solve this problem, the invention offers a broad-band light source that can produce broad-band light having a desired wavelength width in a desired wavelength band. The broad-band light source comprises a pulse light... Agent: Mcdermott Will & Emery LLP

20070160094 - Conductively cooled liquid thermal nonlinearity cell for phase conjugation and method: A thermal nonlinear cell and method. The cell includes a substantially planar nonlinear medium and a mechanism for removing thermal energy from the medium in a direction substantially orthogonal to said medium. In one embodiment, the mechanism for removing thermal energy is a thermally conductive window mounted adjacent to the... Agent: Raytheon Company Patent Docket Administration

20070160093 - Electromagnetic wave generating device: An electromagnetic wave generator encompasses a first pump beam emitter (2) configured to emit a first pump beam (hv1) having a wavelength larger than one micrometer; a second pump beam emitter (25) configured to emit a wavelength-tunable second pump beam (hv2) having a wavelength larger than one micrometer, the wavelength... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070160095 - Laser diode controller and method for controlling laser diode by automatic power control circuit: This invention provides an automatic power control (APC) circuit for keeping an extinction ratio constant even when the efficiency of a laser diode (LD) deteriorates. The APC circuit according to this invention stores first control data for deciding the relationship between a bias current Ib and a modulation current Im... Agent: Smith, Gambrell & Russell

20070160097 - Heat sink for a pulsed laser diode bar with optimized thermal time constant: A radiation-emitting optoelectronic component (1) which is connected to a heat sink (3) and is intended for pulsed operation with the pulse duration D, and in which temperature changes of the optoelectronic component (1) take place with a thermal time constant τ during pulsed operation. The thermal time constant τ... Agent: Cohen, Pontani, Lieberman & Pavane

20070160098 - Laser diode pumped solid-state laser oscillator and laser diode control method of the oscillator: Plural LDs 6 are series-connected and pump a solid-state pumping medium 7. Each of bypass circuits 15 is connected in parallel to an associated one of the LDs 6. An operation of driving each of the bypass circuits 15 is controlled by a control circuit 14. A detection circuit 13... Agent: Sughrue-265550

20070160099 - Multiple anneal induced disordering: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices differing bandgap shifts across a wafer, device or substrate surface. The method includes: pattering the surface of a semiconductor substrate with QWI-initiating material in first regions of the surface; conducting a first... Agent: Daspin & Aument, LLP

20070160100 - Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched iii-sb alloys: Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The... Agent: Mh2 Technology Law Group

20070160101 - Laser diode apparatus, laser arrangement having at least one laser diode apparatus, and optically pumped laser: A laser diode apparatus (2) having a plurality of active regions (4a . . . 4n) which are arranged side by side and are designed for radiation production when the laser diode apparatus is in operation. A lateral dimension (ba . . . bn) of the active regions is varied... Agent: Thomas Langer

20070160102 - Vertically emitting, optically pumped semiconductor laser comprising an external resonator: A vertically emitting semiconductor laser comprising an external resonator (7), a semiconductor body (1), and at least one pump radiation source (9). The semiconductor body (1) has a quantum layer structure (2) as an active zone comprising quantum layers (3) and barrier layers (4) lying in between. The semiconductor body... Agent: Cohen Pontani Lieberman & Pavane LLP

20070160103 - Gas discharge laser light source beam delivery unit: A beam delivery unit and method of delivering a laser beam from a laser light source for excimer or molecular fluorine gas discharge laser systems in the DUV and smaller wavelengths is disclosed, which may comprise: a beam delivery enclosure defining an output laser light pulse beam delivery path from... Agent: William C. Cray Cymer, Inc.

20070160104 - Ultra-short laser source with rare earth ions and stable pulse train and device for lengthening a laser cavity: According to the invention, the resonant cavity (1) exhibits a length of optical path travelled by said pulses greater than 7.5 m so that the pulsed energy EL is greater than 100 nJ, said optical path including at least one passage in said active material (4) and the ultrashort laser... Agent: Young & Thompson

20070160106 - External cavity laser with a tunable holographic element: Embodiments of systems and methods are provided for a tunable laser device. The tunable laser device may include a tunable Bragg reflector that allows its wavelength to be tuned via temperature and/or pressure. This Bragg reflector may include holographic material in which a Bragg grating may be formed comprising parallel... Agent: Jagtiani + Guttag

20070153844 - Mode locker for fiber laser: A mode locking device of fiber laser includes a bar structural body, having a central hollow region, extending along a reference line of the bar structural body. The central hollow region has two ends coupled with two collimators on a fiber laser loop. A polarization dependent isolator is disposed within... Agent: Jianq Chyun Intellectual Property Office

20070153845 - Wide-band tunable laser: A tunable laser module having two or more tunable lasers exhibiting different, possibly contiguous or partially overlapping wavelength regions. The lasers are integrated into a single package, thereby extending a total wavelength range for the package that is substantially beyond that covered by a single laser while—at the same time—providing... Agent: Brosemer, Kolefas & Associates, LLC - (lucent)

20070153858 - Optical spot size converter integrated laser device and method for manufacturing the same: An optical spot size converter integrated laser device includes a substrate; a first waveguide laminated on the substrate and optically coupled to an optical fiber, the first waveguide being divided into a light source region having an active waveguide and an optical spot size converter region, and a trench formed... Agent: Cha & Reiter, LLC

20070153863 - Surface-emitting type semiconductor laser and method for manufacturing the same: A surface-emitting type semiconductor laser includes a first mirror, an active layer formed above the first mirror, a second mirror formed above the active layer, and a current constricting layer formed above or below the active layer, wherein the second mirror has a low refractive index region and a high... Agent: Oliff & Berridge, PLC

20070153839 - Single frequency thulium waveguide laser, an article comprising it, its use and a method of its manufacture: The invention relates to an optical waveguide laser comprising a) an active region formed over a length of the optical waveguide, comprising an excitable material emitting light in response to stimulation by pump light thereby defining an optical gain profile and the excitable material comprises Tm; b) a frequency discriminated... Agent: Buchanan, Ingersoll & Rooney PC

20070153840 - Traveling-wave linear cavity laser: A linear cavity design to produce a traveling wave operation as in a ring laser without the ring cavity design. All fiber configurations may be used to implement fiber lasers based on the linear cavity design.... Agent: Fish & Richardson, PC

20070153842 - Laser control method, laser apparatus, laser treatment method used for the same, laser treatment apparatus: A laser controlling method can generate laser of stable laser pulses, and eliminate useless time from a machining procedure. The method uses a gain medium and a Q-switch, and emits exciting light to the gain medium, thereby setting the Q-switch in a continuous oscillation mode, and prepares a given Q-switch... Agent: Steptoe & Johnson LLP

20070153843 - Laser control method, laser apparatus, laser treatment method used for the same, laser treatment apparatus: A laser controlling method can generate laser of stable laser pulses, and eliminate useless time from a machining procedure. The method uses a gain medium and a Q-switch, and emits exciting light to the gain medium, thereby setting the Q-switch in a continuous oscillation mode, and prepares a given Q-switch... Agent: Steptoe & Johnson LLP

20070153841 - Multi-output harmonic laser and methods employing same: A solid-state laser (10) has a laser resonator (20) with output ports (22) at both ends to provide two separate laser micromachining beams (42). A set of wavelength converters (26) can be employed to convert the laser machining beams (42) to harmonic wavelength outputs, thus reducing the risk of damage... Agent: Electro Scientific Industries/stoel Rives, LLP

20070153846 - Temperature control of optic device: A system including: an optic device; a thermoelectric controller on which the optic device is mounted; and a class-D audio amplifier for driving the thermoelectric controller.... Agent: Sughrue Mion, PLLC

20070153847 - Manufacturing and the design of assemblies for high power laser diode array modules: A method (and structure) of manufacturing high power laser diode array modules provides multi kilowatts of power for a semiconductor-based laser. The method also provides an array module having lower flow requirements. The array module provides a controlled, closed environment for the arrays to operate within, as well as a... Agent: Mcginn Intellectual Property Law Group, PLLC

20070153848 - Optical assembly comprising multiple semiconductor optical devices and an active cooling device: An optical assembly comprises a first semiconductor optical device and a second semiconductor optical device. The first and second semiconductor optical devices may, for example, be laser diodes or light-emitting diodes. In addition, the optical assembly includes an active cooling device that is in thermal contact with the first and... Agent: Ryan, Mason & Lewis, LLP

20070153849 - Adaptive laser diode driver and method: An adaptive laser diode driver capable of driving various laser diode types as well different laser diodes from the same type, while ensuring optimal optical performance over the lifetime and temperature change of the diode. The driver adaptively changes the voltage level of input data signals to achieve full current... Agent: Browdy And Neimark, P.l.l.c. 624 Ninth Street, Nw

20070153850 - Doped stoichiometric lithium niobate and lithium tantalate for self-frequency conversion lasers: In accordance with the present invention, a crystal laser material that is suitable for self doubling is presented. A crystal according to the present invention includes a stoichiometric lithium niobate crystal isomorph host material doped with at least one laser ion. In some embodiments, the stoichiometric lithium niobate crystal isomorph... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070153853 - Buried lateral index guided lasers and lasers with lateral current blocking layers: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to... Agent: Patent Documentation Center

20070153851 - On-chip integration of passive and active optical components enabled by hydrogenation: A method and structure for integrating many optical devices on a single wafer is described. The method fabricates passive interconnect devices using hydrogenation techniques. Lateral optical confinement is achieved by hydrogenating regions laterally adjacent to the waveguide core. Vertical optical confinement is adjusted by careful control of the hydrogen content... Agent: Patent Documentation Center

20070153852 - System for adjusting the wavelength light output of a semiconductor device using hydrogenation: A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning... Agent: Patent Documentation Center

20070153854 - Semiconductor laser device: A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad... Agent: Morrison & Foerster LLP

20070153856 - Semiconductor laser device: An active layer is formed by arranging a plurality of quantum-well layers and a plurality of barrier layers alternatively. An amount of band discontinuity in a conduction band between a barrier layer that is sandwiched by the quantum-well layers and adjacent quantum-well layers is equal to or more than 26... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070153855 - Semiconductor optical device having broad optical spectral luminescence characteristic and method of manufacturing the same, as well as external resonator type semiconductor laser using the same: A semiconductor optical device has a semiconductor substrate, and an active layer which is formed above the semiconductor substrate, the active layer having a plurality of quantum wells formed from a plurality of barrier layers and a plurality of well layers sandwiched among the plurality of barrier layers. At least... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070153857 - High power semiconductor device to output light with low-absorbtive facet window: A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the... Agent: Patent Documentation Center

20070153859 - Single spatial mode output multi-mode interference laser diode with external cavity: The invention relates to a conventional broad-area laser having a single-mode output through the phenomenon of multimode interference (MMI) in step-index waveguides. Another aspect of the present invention relates to a very robust multi-mode compound cavity laser design that is fully defined by the geometry and the refractive index profile... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20070153864 - Lasers and methods associated with the same: Laser structures and related methods are provided. The lasers may be formed of semiconductor materials with most (or all) of the components being formed on a unitary structure. The lasers may include a resonator separated from a light extraction region.... Agent: Wolf Greenfield & Sacks, P.C.

20070153862 - Manufacturable vertical extended cavity surface emitting laser arrays: Arrays of vertical extended cavity surface emitting lasers (VECSELs) are disclosed. The functionality of two or more conventional optical components are combined into an optical unit to reduce the number of components that must be aligned during packaging. A dichroic beamsplitter selectively couples frequency doubled light out of the cavity.... Agent: Cooley Godward Kronish LLP

20070153866 - Manufacturable vertical extended cavity surface emitting laser arrays: Arrays of vertical extended cavity surface emitting lasers (VECSELs) are disclosed. The functionality of two or more conventional optical components are combined into an optical unit to reduce the number of components that must be aligned during packaging.... Agent: Cooley Godward Kronish LLP

20070153861 - Method of fabricating single mode vcsel for optical mouse: A surface emitting laser having a substrate with top and bottom surfaces, a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate and an active layer disposed over the first stack. The surface emitting layer also includes a second stack of... Agent: Casey Toohey Emcore Corporation

20070153867 - Semiconductor component and laser device: A surface emitting semiconductor component (1) with an emission direction is disclosed, which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are spaced apart from one another, wherein between two active regions a... Agent: Cohen Pontani Lieberman & Pavane LLP Thomas Langer

20070153860 - Sub-wavelength grating integrated vcsel: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way... Agent: John P. O'banion O'banion & Ritchey LLP

20070153865 - Vertical cavity surface emitting laser: A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first... Agent: David R. Metzger Sonnenschein Nath & Rosenthal LLP

20070153868 - Semiconductor laser: A semiconductor laser having an optical volume of between about 0.1×λ3 to about 30×λ3, where λ is the wavelength of light emitted by the semiconductor laser. The semiconductor laser comprises an optical cavity having a proximal and distal end; a first reflector disposed at the proximal end; a second reflector... Agent: Wilmer Cutler Pickering Hale And Dorr LLP