Coherent light generators inventions 06/07

20070147444 - Highly efficient second harmonic generation (shg) vertical external cavity surface emitting laser (vecsel) system: A Vertical External Cavity Surface Emitting Laser (VECSEL) system is provided. The VECSEL system includes a laser device including an active layer in which laser light is generated by pumping and a reflector reflecting the laser light generated in the active layer; an optical element that forms a cavity together... Agent: Buchanan, Ingersoll & Rooney PC

20070147447 - Light emitting device having thermal controller: A light emitting apparatus which has reduced power consumption is provided. The light emitting apparatus includes a light emitting device and a thermoelectric cooler which cools the light emitting device. The light emitting device and the thermoelectric cooler are driven by a single voltage source. The light emitting apparatus operates... Agent: Sughrue Mion, PLLC

20070147451 - Laser diode driver: There is provided a laser diode driver including a DC current source supplying DC current to a laser diode, and a plurality of high frequency current sources alternately superposing onto the DC current high frequency current of the same polarity as the DC current and high frequency current of an... Agent: Mcginn Intellectual Property Law Group, PLLC

20070147455 - End pumping vertical external cavity surface emitting laser apparatus: Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR)... Agent: Buchanan, Ingersoll & Rooney PC

20070147459 - Optical data processing apparatus using vertical-cavity surface-emitting laser (vcsel) device with large oxide-aperture: A optical data processing apparatus included a light source, an optical system that concentrates light from the light source to an optical data storage medium, and a mechanism that scans the concentrated laser light on the optical data storage medium, the light source includes at least one Vertical-Cavity Surface-Emitting Laser... Agent: Fildes & Outland, P.C.

20070147441 - Fiber laser modulation method and modulator: A pattern generator 2 produces a predetermined pattern signal 11 which is an electric signal, and a LD output light 12 of light signal is produced by inputting the pattern signal 11 to a plurality of semiconductor lasers (LD) 3 as a pump light source. To make a output light... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070147442 - High-power fiber laser amplifier and fiber laser oscillator: A high-power fiber laser amplifier with a laser wavelength of about 1060 to 1100 nm and an average laser power of more than about 500 W and an almost diffraction-limited beam quality (M2<1.5) comprises a double-clad laser fiber that has a separate, laser-active fiber core with an outer diameter of... Agent: Fish & Richardson PC

20070147443 - High repetition rate visible optical parametric oscillator: A tunable coherent light source includes a pump laser for generating a pump beam and an optical parametric oscillator including a crystal exhibiting an output curve for a pump beam of a defined wavelength, the output curve defining wavelengths of signal and idler outputs based on periodically poled grating periods... Agent: Cohen, Pontani, Lieberman & Pavane

20070147445 - Resonator cavity configuration and method: A resonator cavity (10A) and method and presented. The resonator cavity (10A) comprises at least one gain medium (16) and end reflectors (12, 14) which define together longitudinal modes of light in the cavity, and further comprises an intra-cavity beam coupler assembly (20). The beam coupler assembly (20) is configured... Agent: Nath & Associates

20070147446 - Frequency stabilised gas laser: controlling the condition of the laser tube (1) by means of the control system (7) to a set-point state, wherein the set-point state corresponds to a temperature of the laser tube (1) at the measured ambient temperature in the steady condition without any further heating or cooling; and switching over... Agent: Rankin, Hill, Porter & Clark LLP

20070147448 - Semiconductor laser device and manufacturing method thereof: A nitride semiconductor laser device 20 has nitride semiconductor laser element 5 with dielectric layer 5b composed of AlN formed on light emitting face 5a. The nitride semiconductor laser element 5 is air-tightly sealed within package 1. The atmosphere within the package contains nitrogen with less than 5000 ppm water... Agent: Ndq&m Watchstone LLP

20070147449 - Semiconductor laser device and manufacturing method thereof: A nitride semiconductor laser device 20 has nitride semiconductor laser element 5 with dielectric layer 5b composed of SiO2 formed on light emitting face 5a. The nitride semiconductor laser element 5 is air-tightly sealed within package 1. The atmosphere within the package contains oxygen with less than 5000 ppm water... Agent: Ndq&m Watchstone LLP

20070147450 - Drive current control circuit for laser and optical disk device: A laser-drive-current control circuit that outputs a drive current indicating signal for indicating a laser drive current for driving a laser light emitting element that emits a laser beam to an optical disk and controls the output of the laser drive current based on a light emission monitor signal, which... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070147452 - Optical recording, producing apparatus, and method with peak-hold voltage features: The present invention proposes a method of controlling the laser power of a semiconductor laser that, in this method of controlling the laser power of a semiconductor laser by applying a power source voltage to between the collector and emitter of an output transistor and a serial circuit of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070147453 - Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, image display apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method: An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface... Agent: Bell, Boyd & Lloyd, LLP

20070147454 - Light emitting device: A light emitting device includes an active region of a multiple-quantum-well layered structure including a plurality of quantum well layers of InxGa1-xAsyP1-y, where x=0.1 to 1.0, and y=0.0 to 1.0, and a barrier unit including a plurality of first barrier layers alternating with the quantum well layers, and at least... Agent: Ostrolenk Faber Gerb & Soffen

20070147456 - Laser light source, and two-dimensional image forming device: A laser light source (10) of the present invention is provided with plural semiconductor lasers (1), and a waveguide (3) in which light beams emitted from the respective semiconductor lasers (1) propagate, and the plural semiconductor lasers are disposed at an upper end of an incident end face (31) of... Agent: Steptoe & Johnson LLP

20070147457 - Semiconductor laser device and method for fabricating the same: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers... Agent: Mcdermott Will & Emery LLP

20070147458 - Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities: Arrays of surface emitting lasers are disclosed. A top contact plate is patterned with apertures and used to form an electrical connection to a top surface of a laser die. The top contact plate reduces electrical resistance and improves current uniformity compared with conventional contacts formed by plating.... Agent: Cooley Godward Kronish LLP

20070147460 - Vcsel with integrated lens: A wafer-level device fabrication process forms standing structures around emitting areas of multiple VCSELs. The standing structures can be shaped to hold ball lenses or other optical elements for respective VCSELs or can include platforms on which optical elements are formed. Ball lenses that are attached to the standing structures... Agent: Avago Technologies, Ltd. C/o Klaas, Law, O'meara & Malkin, P.C.

20070147461 - Laser device: A laser device applied to a light source of laser scanning units (LSU) includes a laser diode disposed on an accommodation hole of a flange. A collimator lens is arranged on one end of an inner tube part of a holder while the other end of the inner tube part... Agent: Troxell Law Office PLLC

20070133625 - All-fiber laser device for mid-infrared wavelength band: Provided is an all-fiber laser device oscillating in a mid-infrared wavelength band. The laser device uses a non-silica optical fiber for a gain medium. The non-silica optical fiber includes a core doped with a rare element having an energy transition level corresponding to the mid-infrared wavelength band. A Fabry-Parrot resonator... Agent: Ladas & Parry LLP

20070133626 - Mid-infrared raman fiber laser system: Provided is a mid-infrared Raman optical fiber laser system that oscillates in a 3.0 to 4.0 μm range using a high power laser in a near-infrared wavelength region and a silica optical fiber as a pump light source and a gain medium, respectively. The system includes a plurality of pairs... Agent: Blakely Sokoloff Taylor & Zafman

20070133627 - Simultaneously mode-locked, q-switched laser: A simultaneously mode-locked, Q-switched laser is configured to prevent loss of mode lock during laser operation. A preferred embodiment prevents loss of mode lock by operating the laser between the Q-switched pulses with a residual level of laser power sufficient to maintain a mode-locked state. The residual laser power output... Agent: Stoel Rives LLP

20070133628 - Light source device and projector including light source device: A light source device includes: a laser light source emitting a laser beam of a prescribed wavelength; a nonlinear optical element, disposed facing a light emergence surface of the laser light sources which converts an emission wavelength of the laser beam emitted from the laser light source and causes the... Agent: Oliff & Berridge, PLC

20070133630 - Laser display apparatus: l

20070133629 - Method and device for performing dbr laser wavelength modulation free of thermal effect: The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a... Agent: Corning Incorporated

20070133631 - Wavelength-selective polarization conversion element, illumination optical system, projection display optical system, and image projection apparatus: A wavelength-selective polarization conversion element is disclosed which has a polarization conversion function that has been obtained by a polarization conversion element and a wavelength-selective phase plate in the past. The element includes a polarization beam splitting film and a phase plate. The film splits light and has a characteristic... Agent: Morgan & Finnegan, L.L.P.

20070133632 - Wide-bandwidth mode-locked laser: A mode-locked laser that has an optical cavity containing multiple optical amplifiers, each dedicated to a respective spectral portion of an optical signal generated by the laser, wherein the dispersion effects are managed by utilizing a separate intra-cavity phase tuner for each such spectral portion and/or by having appropriately configured... Agent: Mendelsohn & Associates, P.C.

20070133633 - Laser power control arrangements in electro-optical readers: Laser power control arrangements interrupt power to a laser used in electro-optical readers upon detection of an over-power condition not conforming to preestablished regulatory standards. In one embodiment, during an operational mode, a difference between laser drive currents at two operating points is compared to a difference between laser drive... Agent: Kirschstein, Ottinger, Israel & Schiffmiller, P.C.

20070133634 - Apparatus and method for maintaining constant extinction ratio of laser diode: Provided are an apparatus and method for maintaining an constant extinction ratio of a laser diode (LD). The apparatus includes: an automatic power control circuit maintaining the constant optical power of the LD; a correlation deriver deriving correlations between a bias current of the LD and a modulation current to... Agent: Ladas & Parry LLP

20070133635 - Dual light source and laser projection display apparatus using same: Disclosed is a laser projection display apparatus. The laser projection display apparatus includes a green light source for generating green light having a predetermined wavelength, and a dual light source in which at least two semiconductor lasers are integrated and generate red and blue lights of predetermined wavelengths. The apparatus... Agent: Cha & Reiter, LLC

20070133636 - Waveguide pin photodiode having graded index distribution centering around optical absorption layer: A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide... Agent: Ladas & Parry LLP

20070133637 - Optical semiconductor element and method for manufacturing the same: An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type... Agent: Harness, Dickey & Pierce, P.L.C

20070133638 - Coherent light source and optical device: It is easy to increase output with a wide stripe laser, but the lateral mode is a multimode, and the coupling efficiency is low with a single-mode fiber or a single-mode waveguide, creating problems in terms of application to devices of high coherence. In view of this, the light emitted... Agent: Wenderoth, Lind & Ponack L.L.P.

20070133639 - Semiconductor laser structure including quantum dot: Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge... Agent: Ladas & Parry LLP

20070133641 - Surface-emitting type semiconductor laser and method for manufacturing the same: A surface-emitting type semiconductor laser includes an upper mirror, a lower mirror, and an active layer disposed between the upper mirror and the lower mirror, and emits laser light in a direction of lamination of the lower mirror, the active layer and the upper layer, wherein at least one of... Agent: Oliff & Berridge, PLC

20070133642 - Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same: Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer,... Agent: Ladas & Parry LLP

20070133640 - Vertical external cavity surface emitting laser with pump beam reflector: Provided is a vertical external cavity surface emitting laser (VECSEL). The VECSEL includes: a semiconductor chip including an active layer emitting a beam having a predetermined wavelength and a reflection layer reflecting the beam generated from the active layer to the outside of the active layer; an external mirror that... Agent: Buchanan, Ingersoll & Rooney PC

20070133643 - Effective excitation, optical energy extraction and beamlet stacking in a multi-channel radial array laser system: A laser device is comprised of multiple RF excited, diffusion-cooled slab-geometry laser-gain-channels all mounted in a radial-array configuration to provide a multi-channel laser system capable of both high average and peak laser output power, in a extremely small, lightweight and relatively low cost physical package, ideally suited to robotic applications.... Agent: Herb Joseph John Seguin

20070133644 - Scalable thermally efficient pump diode systems: Scalable, thermally efficient pump diode systems. These systems may include an arrangement of pump diodes and thermally conductive spacers mounted within a single indentation in a substrate or substrate clamps, so as to provide enhanced heat removal from the system. These systems also may include a plurality of such pump... Agent: Kolisch Hartwell, P.C.

20070133645 - Controlling the spatio-temporal uniformity of a pulsed gas laser beam: The invention relates to the control of the spatio-temporal uniformity of a pulsed gas laser beam, especially generated by a high-power excimer laser. According to the invention, two raised lateral parts are provided on at least one of the discharge electrodes, said parts enabling the electrical discharge to be initialised... Agent: Christie, Parker & Hale, LLP

20070133646 - Star configuration optical resonator: This work presents a concept and scaling considerations for a diode-pumped solid-state laser operating in the active mirror mode. The laser uses relatively thin gain medium with large aperture that is pressured-clamped onto a transparent substrate with an internal microchannel type heat exchanger. Pump radiation is injected through the transparent... Agent: Moore And Van Allen PLLC For Boeing

20070133647 - Wavelength modulated laser: A laser includes an end reflector optically coupled to a front reflector, the front reflector and the end reflector to define a laser cavity. An optical path length modulation section is optically coupled between the front reflector and the end reflector, the optical path length modulation section to change between... Agent: Blakely Sokoloff Taylor & Zafman

20070133648 - Optical device coupling light propagating in optical waveguide with diffraction grating: An optical waveguide propagates a laser beam. Main diffraction grating and sub-diffraction grating couple light propagating in the optical waveguide. The main diffraction grating and the sub-diffraction grating couple the light in such a manner that propagation in a second order transverse mode of the light propagating in the optical... Agent: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP

20070133650 - Parabolic waveguide-type collimating lens with tunable external cavity laser diode provided with the same: The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source. The monolithically integrated type tunable external cavity laser diode light source includes a gain medium for generating a gain of an optical signal, a collimating lens... Agent: Ladas & Parry LLP

20070133649 - Wavelength tunable light source: Provided is a wavelength tunable light source including a semiconductor optical amplifier, a beam steering unit or a beam deflector, and a concave diffraction grating integrated therein. The wavelength tunable light source can be easily implemented since locations to which a beam is diffracted by the concave diffraction grating and... Agent: Ladas & Parry LLP

20070127529 - Doped fiber scene projection system and method: This invention pertains to a scene projection system and a method for projecting a scene that can simulate light temperature of above 2000 K. The system comprises of a light source part for generating light at a lower wavelength; a means part for individually controlling dynamic range, contrast, brightness, temporal... Agent: Naval Research Laboratory Associate Counsel (patents)

20070127530 - Laser control: A control system for operating a laser, including: a laser driver and a controller for providing the laser driver with a first electrical input indicative of a desired value for an output characteristic of the laser. The laser driver is arranged to control a second electrical input from the laser... Agent: Sughrue Mion, PLLC

20070127531 - Laser source with broadband spectrum emission: A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably≧15 nm) spectrum of emission and a high output power (preferably≧100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region, the carrier... Agent: Brown & Michaels, PC 400 M & T Bank Building

20070127532 - Semiconductor laser diode: A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on... Agent: Mcdermott Will & Emery LLP

20070127534 - Complex optical device: The present invention provides a complex optical device capable of decreasing electric power consumption, generating a high quality laser, and modulating the laser without degradation. The complex optical device includes a laser diode element (LD) and an electroabsorption modulator element (EAM) which are formed on the same substrate and optically... Agent: Volentine Francos, & Whitt PLLC

20070127533 - Long-wavelength vertical cavity surface emitting lasers having oxide aperture and method for manufacturing the same: Disclosed herein is a vertical cavity surface emitting laser device. The laser device comprises a semiconductor lower mirror layer, a first semiconductor electrode layer, a gain-activation layer and a semiconductor anode layer sequentially grown on the compound semiconductor substrate, a re-growth pattern formed on the semiconductor anode layer to a... Agent: William Collard Collard & Roe, P.C.

20070127535 - Distributed bragg reflector (dbr) structure in vertical cavity surface emitting laser (vcsel) diode, method on manufacturing the same, and vcsel diode: A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive... Agent: Ladas & Parry LLP

20070127536 - Semiconductor having enhanced carbon doping: Semiconductors with enhanced strain. One embodiment includes a semiconductor device. The semiconductor device may include an epitaxial structure. The epitaxial structure includes one or more semiconductor layers and dielectric layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070127537 - Performing robust cost analysis of a gas laser application: A system that performs an analysis of a gas laser application comprises a receiver component that receives an identity of a gas laser and parameters relating to intended use of the gas laser. An analysis component automatically generates a cost analysis of the gas laser application based at least in... Agent: Amin, Turocy & Calvin, LLP

20070127538 - Athermal external cavity laser: Provided is an athermal external cavity laser (ECL), whose output optical power and output wavelength can be kept regular irrespective of temperature changes without using additional temperature controlling components. The ECL comprises: a semiconductor amplifier; an optical fiber comprising a core in which a Bragg grating is formed and a... Agent: Blakely Sokoloff Taylor & Zafman

20070127539 - Narrow band laser with wavelength stability: An external cavity diode laser system includes a thin film filter. The output facet of the laser diode is coated with a partial reflection coating and the cavity side facet is coated with an anti-reflection coating. A roof-top prism or corner cube retroreflector serves as the laser cavity end reflector... Agent: Morrison & Foerster LLP