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Coherent light generators inventions 05/07

Recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing format for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.   05/31/2007 > patent applications in patent subcategories.

20070121682 - Laser beam machine: A laser beam machine for processing an article to be processed with a laser beam from a processing scanner 1 comprised of an optical system employing a laser oscillator 10 . Article position controllers 2a and 2b are controlled in a coordinated manner in accordance with the direction of the... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070121683 - Direct control of extinction ratio and optical modulation amplitude for fiber transmitters: A fiber optic transmitter and the method of using the fiber optic transmitter includes a laser supplied with an input current and which produces a light beam coupled into a fiber. A photodiode detects the intensity of the light beam. A processor performs the steps of sampling the waveform and... Agent: Agilent Technologies Inc.

20070121685 - Laser device: A laser device emits a higher harmonic wave of multi-longitudinal mode laser light and is capable of realizing higher efficiency and higher performance in a simple and economical fashion. The laser device includes a light source formed from a semiconductor laser emitting a fundamental wave in multi-longitudinal mode, and a... Agent: Birch Stewart Kolasch & Birch

20070121684 - Multiple wavelength laser light source using fluorescent fiber: A multiple wavelength laser light source using a fluorescent fiber includes a blue semiconductor laser element (2) for emitting an excitation light (a), and an optical fiber (17) having a first side fiber end face and a second side fiber face, the excitation light (a) from the blue semiconductor laser... Agent: Barnes & Thornburg LLP

20070121686 - Combination optical isolator and pulse compressor: Optical systems configured for both changing the length of a laser pulse and operating as an optical isolator are disclosed. In some embodiments, optical isolation is achieve contemporaneously with laser pulse expansion or compression by using a grating based compressor or expander as one of the polarization elements of the... Agent: Carr & Ferrell LLP

20070121687 - Solid state intra-cavity absorption spectrometer: The present invention provides a solid state intra-cavity absorption spectrometer comprising a solid-state gain device interspersed in an array of oscillators in a chamber to produce a wide area coherent high power source of Terahertz radiation. The source is then partitioned into two separate regions, one having a gain medium... Agent: Patent Docket Administrator Lowenstein Sandler P.C.

20070121688 - Line replaceable systems and methods: In accordance with at least one embodiment of the present invention, a manufacturing system includes a factory system and a field system. The factory system includes a first mount configured to receive, support, and precisely locate a removable line replaceable unit (LRU) having one or more components at a first... Agent: Macpherson Kwok Chen & Heid, LLP

20070121689 - Methods for producing diode-pumped micro lasers: A miniaturized laser package includes a modern LDP, modified to accept a solid state microchip assembly pumped by the diode laser. The microchip assembly is added to standard LDPs containing laser diodes mounted on heatsinking shelves by affixing a second shelf to mount and heatsink the microchip assembly. Standard packages... Agent: Brown & Michaels, PC 400 M & T Bank Building

20070121690 - Highly efficient gallium nitride based light emitting diodes via surface roughening: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and... Agent: Gates & Cooper LLP Howard Hughes Center

20070121692 - Nitride semiconductor laser element and fabrication method thereof: At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.... Agent: Morrison & Foerster LLP

20070121691 - Nitride semiconductor laser element and method for manufacturing the same: A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated over said substrate and having a ridge on its surface, and an electrode, wherein a first protective film is formed so that an air gap is located on at least part of the region extending from the... Agent: GlobalIPCounselors, LLP

20070121693 - Semiconductor laser device: A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070121694 - Surface emitting laser: There is provided a novel surface emitting laser structure unnecessary to have multilayer mirrors in both of upper and lower sides of an active layer. A surface emitting laser comprises a two-dimensional periodic structure which is comprised of an active material having a gain in a specific wavelength band of... Agent: Fitzpatrick Cella Harper & Scinto

20070121695 - Vertical-cavity surface-emitting laser (vcsel) device and the method of manufacturing thereof: A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post... Agent: Fildes & Outland, P.C.

20070121696 - Submount for light emitting/receiving device: In a submount main body (1) composed of a single crystal silicon, a mounting surface (4) on which a light-emitting device (11) is mounted is composed of a (100)-oriented surface and the inner surface of a through hole (3) which is formed by anisotropic etching is parallel to the (110)-oriented... Agent: Edwards Angell Palmer & Dodge LLP

  
05/24/2007 > patent applications in patent subcategories.

20070116068 - System and components for generating single-longitudinal-mode nanosecond laser beam having a wavelength in the range from 760nm to 790nm: A laser system and components for generating Single-Longitudinal-Mode (SLM) nanosecond laser beam having a wavelength in the range from 760 nm to 790 nm. The cavity of laser system comprising a front cavity mirror, an Erbium and Ytterbium irons co-doped or Erbium iron doped gain medium, a saturable absorber for... Agent: Hong Wei Mao

20070116069 - Uncooled external cavity laser operating over an extended temperature range: A laser package comprising a semiconductor laser having an operating temperature range and a heater, wherein the heater is configured to heat the laser when the laser package is positioned in an environment having an ambient temperature which lies outside of the operating temperature range of the laser, so that... Agent: Mark J. Pandiscio Pandiscio & Pandiscio, P.C.

20070116070 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070116071 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070116072 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070116073 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070116074 - Modular diode laser assembly: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with... Agent: Patent Law Office Of David G. Beck

20070116075 - Laser diode driver: A laser diode driver includes a DC current source supplying DC current to a laser diode, a high frequency current source connected in parallel with the DC current source and supplying high frequency current to the laser diode. The laser diode driver further includes a circuit capable of changing the... Agent: Mcginn Intellectual Property Law Group, PLLC

20070116076 - Controlling optical power and extincation ratio of a semiconductor laser: Disclosed herein are methods, apparatus, and systems to achieve substantially constant optical power and/or extinction ratio for a semiconductor laser. In one aspect, a microcontroller of an optical transmitter may adjust an electrical current that is provided to a semiconductor laser based at least in part on a comparison of... Agent: Blakely Sokoloff Taylor & Zafman

20070116077 - Vertically displaced stack of multi-mode single emitter laser diodes: An optical source comprised of a stack of at least two laser diode subassemblies is provided. Each laser diode subassembly includes a submount and a multi-mode, single emitter laser diode. Each of the at least two laser diode subassemblies is mounted to a mounting member. Means are included to vertically... Agent: Patent Law Office Of David G. Beck

20070116078 - High efficiency second harmonic generation vertical external cavity surface emitting laser: A vertical external cavity surface emitting laser (VECSEL) in which the full-width at half maximum (FWHM) of laser light is reduced by two etalon filter layers to improve the efficiency of second harmonic (SHG) crystal is provided. The VECSEL includes: a laser chip for generating laser light; a first etalon... Agent: Buchanan, Ingersoll & Rooney PC

20070116079 - Brightness preserving laser beam shaper: The current invention describes the method of making symmetrical radiation of extremely asymmetrical light sources, e.g. laser diode bars, using the shaper of three optical elements that preserve the brightness of the initial light source. The first element of the shaper—collimator of the fast axis—images the light source in the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070116080 - Method and device for producing laser used directly as a frequency standard of optical frequency: The present invention provides a method for producing laser used directly as a frequency standard of optical frequency, comprising: a collimated atomic beam used as laser gain medium; the laser gain medium being put in vacuum; before the particles of the laser gain medium entering a laser resonant cavity, a... Agent: Merchant & Gould PC

20070116081 - Solid-state laser and multi-pass resonator: A laser system may include a solid-state laser gain material (LGM) module. The system may also include a multi-pass resonator including a plurality of relay mirrors. The plurality of mirrors may be grouped at least in pairs. A first mirror of each pair of relay mirrors may be positioned to... Agent: Moore And Van Allen PLLC For Boeing

20070116082 - Modular solid-state laser platform based on coaxial package and corresponding assembly process: Application of a modular coaxial package design, compatible with telecommunication passive component packaging, to microchip lasers, in particular to passively Q-switched microlasers, pumped with a fiber-coupled diode, is disclosed. The number of parts is thereby reduced while providing the adequate degrees of freedom for the active or passive alignment of... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

  
05/17/2007 > patent applications in patent subcategories.

20070110111 - Power system for ultraviolet lighting: A power system for ultraviolet lighting includes a first network transformer structured to be powered from a first medium voltage power source and to output a first low voltage output; and a second network transformer structured to be powered from a second medium voltage power source and to output a... Agent: Martin J. Moran, Esq. Eaton Electrical, Inc.

20070110112 - Group iii nitride semiconductor light emitting device: A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0<x<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that... Agent: Mcdermott Will & Emery LLP

20070110113 - Semiconductor laser diode and semiconductor laser diode assembly containing the same: Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel... Agent: Buchanan, Ingersoll & Rooney PC

20070110114 - Multisectional laser: Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via... Agent: Michaelson & Associates

20070110115 - Surface emitting laser device: A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070110116 - High-gain solid-state laser: A laser gain material module may include a lasing portion and a perimetral portion. The perimetral portion may be formed in a predetermined shape to substantially prevent any spontaneously emitted photons created in the lasing portion and entering the perimetral portion from returning to the lasing portion.... Agent: Moore And Van Allen PLLC For Boeing

20070110117 - Efficient method and apparatus for generating singlet delta oxygen at an elevated pressure: An improved singlet delta oxygen generator (SOG) and method of its use are disclosed. The improved SOG is compact and scalable, capable of operating in a zero-gravity or low gravity environment, requires no gaseous diluent or buffer gas, and is capable of operating at pressures as high as one atmosphere.... Agent: Storm LLP

20070110118 - Vertical external cavity surface emitting laser capable of recycling pump beam: A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled to increase pumping beam absorption is provided. The VECSEL comprises: an active layer for generating and emitting signal light with a predetermined wavelength; an external mirror separated from and facing a top... Agent: Buchanan, Ingersoll & Rooney PC

  
05/10/2007 > patent applications in patent subcategories.

20070104230 - High-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling: The invention relates to a high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling according to the precharacterizing clause of claim 1 and a use of the laser system.... Agent: Oliff & Berridge, PLC

20070104231 - Wavelength tunable resonator with a prism: A wavelength tunable resonator includes a first reflector for reflecting a beam of electromagnetic radiation towards a second reflector, said second reflector for reflecting said beam back towards said first reflector, said first and second reflector defining a resonator having an optical path length, a gain medium for emitting said... Agent: Perman & Green

20070104232 - Pulse shaping circuit: The invention relates to a pulse shaping circuit for shaping electrical pulses driving an optical transmitter, e.g. a lased diode or an LED, and for providing electrical pulses having independently height and width-adjustable peaking at the edges thereof. The pulse shaping circuit of the present invention includes a high-pass RC... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20070104233 - Thermal management system for high energy laser: A method and system are disclosed for cooling a laser, such as a high average power (HAP) solid state laser (SSL). A coolant that has been heated from previous use can be conditioned by transferring heat from the coolant to a phase change medium. The conditioned coolant can then be... Agent: Macpherson Kwok Chen & Heid, LLP

20070104234 - Laser system and method for patterning mold inserts: A laser system (99) for patterning a mold insert includes a laser source module (10), a feedback module (20), and a controlling module (30). The laser source module includes a laser source (11) for emitting laser beams, and a lens module (10) with a changeable focal length configured for focusing... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

20070104235 - Laser diode control circuit loop: A laser diode control circuit loop comprises a reference circuit with a programmable reference current, a first endpoint thereof providing a first voltage and a second endpoint thereof providing a second voltage, according as the reference current passing through the first endpoint and the second endpoint; and a driving circuit,... Agent: Rosenberg, Klein & Lee

20070104236 - Semiconductor laser and method of manufacturing the same: A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed, and the reliability is high. When a semiconductor layer is manufactured by selective MOVPE growth, a DH mesastripe (6) is epitaxially grown... Agent: Young & Thompson

20070104237 - Semiconductor laser apparatus and semiconductor laser device: In an outermost surface of a semiconductor laser device to which a solder layer is applied, an incomplete adherent layer is formed which is incompletely adhered to the solder layer, extends in a width direction perpendicular to a longitudinal direction of a light-emitting region and a stacking direction of the... Agent: Morrison & Foerster LLP

20070104238 - Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion: The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module... Agent: Nutter Mcclennen & Fish LLP

20070104239 - Visible light communication apparatus and visible light communication method: A PLC modem performs communication via transmission lines made of a pair of cables as an example of a wired transmission line. Data displaying an operation state of the PLC modem is transmitted to a light emitting part via a modulator, and is converted into a high-speed flash signal for... Agent: Stevens, Davis, Miller & Mosher, LLP

20070104240 - Methods for producing a semiconductor entity: A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif... Agent: Winston & Strawn LLP Patent Department

20070104241 - Vertical external cavity surface emitting laser with pump beam reflector: A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled using a pumping beam reflection layer to increase pumping beam absorption is provided. The VECSEL includes: an active layer for generating and emitting signal light; an external mirror that is separated from... Agent: Buchanan, Ingersoll & Rooney PC

20070104242 - Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module: The distributed-feedback semiconductor laser 1 comprises an active region 30 for generating the gain of the laser beam and a diffraction grating 13 formed in the active region 30. Out of the two front and back end surfaces sandwiching the active region 30, the front end surface 1a has a... Agent: Sughrue Mion, PLLC

20070104243 - Laser apparatus for treating workpiece: The present invention relates to a laser apparatus for treating a workpiece. The laser apparatus includes a worktable, a cooling device, a laser, and a lens assembly. The cooling device is disposed on the worktable, the workpiece is positioned on the cooling device, and the cooling device is configured for... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

  
05/03/2007 > patent applications in patent subcategories.

20070098023 - Fiber laser and methods manufacture and use: Fiber lasers include a fiber polarization controller to compensate for polarization variation In addition, fiber lasers include dual gain fibers to provide broader bandwidth for ultrashort pulse generation and amplification.... Agent: Darby & Darby P.C.

20070098024 - High power, end pumped laser with off-peak pumping: A laser configuration producing up to 100's of Watts of output is provided, based on a solid-state gain medium, a source of pump energy which is detuned from the maximum absorption wavelength for the gain medium, and optics arranged to deliver the pump energy through an end of the gain... Agent: Haynes Beffel & Wolfeld LLP

20070098025 - High-repetition-rate femtosecond regenerative amplification system: Provided is a high-repetition-rate femtosecond regenerative amplification system. The regenerative amplification system includes: a laser oscillator emitting pulses; a stretcher stretching the pulses with negative dispersion; a regenerative amplifier amplifying the pulses, the regenerative amplifier comprising an acousto-optic modulator for pulse switching, a pulsed pump laser for pumping a gain... Agent: Rothwell, Figg, Ernst & Manbeck, P.C.

20070098026 - Laser driver with selectable output impedance: The present invention is to provide a laser driver able to select configurations for the high speed application and for the lower speed and the lower power dissipation. The laser driver of the present invention provides a pair of transistors with the differential configuration whose outputs are complementary to each... Agent: Venable LLP

20070098027 - Light-emitting element driver: The bias current of a current injection-type light-emitting element is set very close to the threshold current, and to guarantee a stable optical output and high-speed initiation of the light-emitting operation. In the bias current supply circuit 12, particularly in closed-loop circuit 20, feedback operation of bias APC with variable... Agent: Texas Instruments Incorporated

20070098028 - Laser systems: e

20070098029 - System for emission of electromagnetic radiation, and method for making: A device for emission of electromagnetic radiation comprises a source of atomic particles and a collector disposed to receive atomic particles from the source. The collector comprises an emission medium, the medium comprising a crystal having a spatial dimension in the range from about 10 nanometers to about 50 micrometers,... Agent: Paul J. Diconza General Electric Global Research

20070098030 - Nitride semiconductor laser device and method of manufacturing the same: A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride semiconductor layer, a metal layer and a metal-based clad layer sequentially formed on the substrate. The metal layer and the metal-based... Agent: Buchanan, Ingersoll & Rooney PC

20070098031 - Self-mode-locked semiconductor laser: An interband self-mode-locked (SML) semiconductor laser utilizes an active waveguide structure that includes an active waveguide section and one or more passive waveguide sections that together enhances self-mode-locking. The SML laser operation is based on enhanced Kerr lens mode-locking by vertically optically combining the active section with one or more... Agent: Mendelsohn & Associates, P.C.

20070098032 - Polarization control in vertical cavity surface emitting lasers using off-axis epitaxy: A polarization pinned long wavelength vertical cavity surface emitting laser (VCSEL). The VCSEL includes a III V semiconductor substrate. A bottom DBR mirror is formed on the semiconductor substrate. An active region is formed in an off-axis orientation on the bottom DBR mirror. The active region includes a surfactant that... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070098033 - External optics and chamber support system: A gas discharge laser and method of operating same is disclosed which may comprise a gas discharge laser chamber support structure comprising a first support arm attached to a mounting table; a gas discharge laser chamber slideably engaging the first support arm; an first optical element sensitive to chamber vibration... Agent: William C. Cray Cymer, Inc.

20070098034 - Laser device: A laser device which controls output of a laser oscillator based on a monitor light obtained by splitting a laser beam, comprising a luminous flux splitting means for reflecting the laser beam and for splitting as the monitor light, wherein a reflectivity R1 on a front surface and a reflectivity... Agent: Nields & Lemack

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