Coherent light generators inventions 04/07

20070091939 - Microscope and lamphouse: A microscope includes an illuminating unit that includes an excitation light source emitting an excitation light, and a phosphor receiving the excitation light and emitting illumination light in a specific wavelength range. The illuminating unit illuminates a specimen with the illumination light. The microscope also includes an observation unit for... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070091940 - Apparatus and method for generating short optical pulses: An apparatus for generating short optical pulses is provided having a storage medium capable of storing optical energy, a first module for delivering pumping optical pulses or continuous beam into the storage medium to energize the storage medium, and a second module for delivering one or more trigger optical pulses... Agent: Kenneth J. Lukacher, Esq. Suite 301

20070091942 - Laser diode generating passive mode and method of creating optical pulse using the same diode: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected... Agent: Ladas & Parry LLP

20070091941 - Mode-locked laser and optical multi-carrier source using same: A mode-locked laser serves as a light source for stabilizing the frequency of each optical carrier and generates high-quality optical multi-carrier. The mode-locked laser is equipped with a master laser for generating master laser light; a mode-locked laser section including in an optical resonator at least a modulating section, am... Agent: Harness, Dickey & Pierce, P.L.C

20070091943 - Light source module: A light source module includes a laser configured to generate infrared light, and a harmonic generating crystal is in optical communication with the laser. According to one exemplary embodiment, the harmonic generating crystal has a periodicity selected to provide a maximum output at an initial temperature. An actuator is coupled... Agent: Hewlett Packard Company

20070091944 - Widely tunable rf source: A detector is optically coupled to a first and a second semiconductor laser, wherein the detector to output two or more beat frequencies generated by mixing optical outputs of the first and second semiconductor lasers, wherein the two or more beat frequencies are electrical signals.... Agent: Blakely Sokoloff Taylor & Zafman

20070091946 - Dual current control for laser diode driver circuit: Circuitry for reliably regulating the current driving a laser diode or other current-driven load is described. In particular, a dual-current driver circuit is described that uses both a current source circuit and a current sink circuit. The current source circuit and the current sink circuit may each independently control the... Agent: Banner & Witcoff, Ltd. Attorneys For Client Nos. 003797 & 013797

20070091947 - Laser diode drive circuit, method for controlling the same, and semiconductor integrated circuit (ic) for driving laser diode: A laser diode drive circuit drives a high-power laser diode using a single voltage source and a transistor. The laser diode drive circuit includes: a voltage-level shifter shifting an output voltage of an analog signal processor to a predetermined-level voltage; a voltage adder for adding a predetermined voltage according to... Agent: Stein, Mcewen & Bui, LLP

20070091945 - Package for a laser diode component, laser diode component and method for producing a laser diode component: A package for a laser diode component is described. This comprises a carrier, which has on a front side a mounting region for a laser diode chip or laser diode bar, and at least one holding device, which is arranged on the carrier and has at least one aperture, in... Agent: Thomas Langer Cohen, Pontani, Lieberman & Pavane LLP

20070091950 - Inorganic compound, composition and molded body containing the same, light emitting device, and solid laser device: wherein each of the Roman numerals in the parentheses represents the valence number of ion; each of A1, A2, and A3 represents the element at the A site; B represents the element at the B site; each of C1 and C2 represents the element at the C site; each of... Agent: Sughrue Mion, PLLC

20070091948 - Multi-stage optical amplifier having photonic-crystal waveguides for generation of high-power pulsed radiation and associated method: A method and apparatus use a photonic-crystal fiber having a very large core while maintaining a single transverse mode. In some fiber lasers and amplifiers having large cores problems exist related to energy being generated at multiple-modes (i.e., polygamy), and of mode hopping (i.e., promiscuity) due to limited control of... Agent: Lemaire Patent Law Firm, P.l.l.c.

20070091949 - Solid-state laser apparatus having sintered polycrystalline inorganic gain medium: In a laser-diode-excited laser apparatus: an excitation light source realized by one or more semiconductor lasers emit first laser light having a first wavelength; and a gain medium is excited by the first laser light, and oscillates second laser light having a second wavelength different from the first wavelength. Each... Agent: Sughrue Mion, PLLC

20070091951 - Gain-coupled distributed quantum cascade laser: Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.... Agent: Agilent Technologies Inc.

20070091953 - Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes: A semiconductor light-emitting diode having a low beam divergence includes at least one waveguide comprising an active region generating light by injection of a current, a photonic band crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one optical... Agent: Brown & Michaels, PC 400 M & T Bank Building

20070091954 - Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof: A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between... Agent: Lawrence Y.d. Ho & Associates Pte Ltd

20070091952 - Semiconductor laser apparatus and fabrication method of the same: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.... Agent: Oliff & Berridge, PLC

20070091955 - Semiconductor laser device and optical pickup apparatus using the same: A semiconductor laser device is provided, in which an optical axis of a far-field pattern (FFP) is stabilized and which is capable of oscillating in a fundamental transverse mode up to a high output. An optical pickup apparatus also is provided, in which an optical axis of an FFP is... Agent: Hamre, Schumann, Mueller & Larson P.C.

20070091956 - Semiconductor laser element and method of fabrication thereof: A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked structure comprises a buffer layer, an n-Al0.6Ga0.4As cladding layer, an n-Al0.47Ga0.53As cladding... Agent: David R. Metzger Sonnenschein Nath & Rosenthal

20070091957 - Semiconductor laser device and method for manufacturing the same semiconductor laser device: A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer... Agent: Leydig Voit & Mayer, Ltd

20070091958 - Semiconductor laser device and method of manufacturing the same: This invention is to provide a semiconductor laser device with a small interval between light emitting points of laser lights and a method of manufacturing the same. A first light emitting element 1a having a semiconductor substrate 12a and a laser oscillation section 10a, and a second light emitting element... Agent: Arent Fox PLLC

20070091960 - High power top emitting vertical cavity surface emitting laser: A laser device including a VCSEL array provides an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus,... Agent: Paul A. Fattibene Fattibene & Fattibene

20070091961 - Method and structure for low stress oxide vcsel: The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing... Agent: Avago Technologies, Ltd.

20070091963 - Optical element and method for manufacturing the same: An optical element includes: a substrate; a surface-emitting type semiconductor laser that is provided on the substrate and emits laser light in a direction orthogonal to a surface of the substrate; a rectification element that is provided on the substrate and connected in parallel with the surface-emitting type semiconductor laser,... Agent: Harness, Dickey & Pierce, P.L.C

20070091959 - Optimizing the increased oxide aperture relative to the laser dimensions: The present invention provides a VCSEL device (100) and a method of fabricating the same, wherein two or more characteristic device dimensions (DM, DP) are correlated with each other so as to optimise single mode emission, while at the same time significantly providing an increased oxide aperture (DOX) compared to... Agent: Paul A. Fattibene Fattibene & Fattibene

20070091966 - Semiconductor light-emitting device and method of manufacturing the same: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to... Agent: David R. Metzger Sonnenschein Nath & Rosenthal LLP

20070091962 - Substrate for vertical cavity surface emitting laser ( vcsel) and method for manufacturing vcsel device: The present invention provides a substrate for a VCSEL that improves reliability and yield. A substrate for VCSEL includes multiple element regions separated by an element dividing region that is scribed or diced. In each element region, a light emitter that emits laser light in a direction perpendicular to the... Agent: Fildes & Outland, P.C.

20070091964 - Surface-emitting semiconductor laser component and optical projection apparatus with a surface-emitting semiconductor laser component such as this: A surface-emitting semiconductor laser component is disclosed, having a resonator (3, 9), a semiconductor body (5) which comprises a layer sequence (4) which is intended for radiation production, a transparent, frequency-selective thermally conductive element (6) which makes thermal contact with a surface (5a) of the semiconductor body (5) through which... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20070091965 - Vertical-cavity surface-emitting semiconductor laser device: A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070091967 - Laser emitting material, method for making the same and use thereof: A solid-state laser emitting material for use in conjunction with a light source includes a polymer matrix functioning as host materials, containing laser dye of rhodamine 590 or rhodamine 610 as gain materials and nano-submicron particles as scatters therein. The lowest lasing threshold of the laser emitting material is approximately... Agent: Jacobson Holman PLLC

20070091969 - Gas laser oscillator: A gas laser oscillator appropriately detecting a clogging of a laying pipe of a sub ejection apparatus is disclosed. The gas laser oscillator according to the present invention includes a laser gas flow pipe, a driving part, a divide wall, a main ejection apparatus, a sub ejection apparatus, a detect... Agent: Mcdermott Will & Emery LLP

20070091968 - Two-stage laser system for aligners: The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser (50)... Agent: Patenttm.us

20070091970 - Solid dielectric encapsulated interrupter with reduced corona levels and improved bil: A current interrupter assembly includes an insulating structure, a current interrupter embedded in the structure, a conductor element embedded in the structure, a current interchange embedded in the structure and connected to create a current path between the current interrupter and the conductor element, and a semiconductive layer covering at... Agent: Fish & Richardson P.C.

20070091971 - Mems resonator and method of enhancing an output signal current from a mems resonator: The resonator comprises two capacitively coupled electrodes. One of the electrodes is made of a p-type doped semiconductor material, whereas the other electrode is made of an n-type doped semiconductor material. The invention also comprises a method of using this specific selection of the doping for enhancing the output signal... Agent: Harness, Dickey & Pierce, P.L.C

20070091972 - Thermal-expansion tolerant, preionizer electrode for a gas discharge laser: A corona-discharge type, prelonizer assembly for a gas discharge laser is disclosed. The assembly may include an electrode and a hollow, dielectric tube that defines a tube bore. In one aspect, the electrode may include a first elongated 0o conductive member having a first end disposed in the bore of... Agent: Matthew K. Hillman Cymer, Inc., Legal Dept.

20070091973 - Injection locking q-switched and q-switched cavity dumped co2 lasers for extreme uv generation: A CO2 laser reference oscillator (RO) can provide injection seeding to a Q-switched (QS) or Q-switched cavity dumped (QSCD) CO2 laser, where the output frequency of the RO laser is locked to the peak of the laser line by the use of appropriate electronics to dither one of the resonator... Agent: Stallman & Pollock LLP

20070091974 - Ultra-high-q surface-tension-induced monolithically integrated on-chip resonator and associated devices: A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure... Agent: Gauthier & Connors LLP

20070091976 - Edge emitting laser diode assembly having adjustable mounting of diodes: A novel edge emitting laser diode assembly with adjustable mounting of the diodes is described. A laser diode submount carrier is adjustably mounted onto a base assembly in such a manner as to compensate for variations in thickness of each of the edge emitting laser diodes. The laser array assembly... Agent: Bruce H. Johnsonbaugh Eckhoff & Hoppe

20070091975 - Mounting system for optical frequency reference cavities: A technique for reducing the vibration sensitivity of laser-stabilizing optical reference cavities is based upon an improved design and mounting method for the cavity, wherein the cavity is mounted vertically. It is suspended at one plane, around the spacer cylinder, equidistant from the mirror ends of the cavity. The suspension... Agent: Jennifer L. Bales

20070091978 - Laser irradiation apparatus and manufacturing method of semiconductor device: A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical... Agent: Nixon Peabody, LLP

20070091977 - Method and system for forming periodic pulse patterns: A system for forming a periodic pulse pattern in a sample includes a movable stage having the sample loaded thereon, a pulse laser for generating a laser beam of pulses, an objective lens for focusing the laser beam to the sample to form a pattern of pulses in the sample,... Agent: Bacon & Thomas, PLLC

20070086492 - Laser amplifier power extraction enhancement system and method: A high extraction efficiency laser system. The novel laser system includes a master oscillator for providing a laser beam, an amplifier adapted to amplify the laser beam, and an aberrator for aberrating the laser beam to prevent the formation of caustic intensity patterns within the amplifier. In an illustrative embodiment,... Agent: Patent Docket Administration Raytheon Systems Company

20070086493 - Short pulse laser device: A short pulse laser arrangement (11) with, preferably, passive mode-locking, comprising a resonator (12) containing a laser crystal (14) and several mirrors (M1-M7; OC), one of which forms a pump beam coupling-in mirror (M1) and one of which forms a laser beam out-coupling mirror (OC), and a multiple reflexion telescope... Agent: Ostrolenk Faber Gerb & Soffen

20070086494 - Semiconductor laser device: A semiconductor laser device of the present invention is provided with a base portion (2) having a horizontal top surface (S), a heat sink portion (3) that has a vertical element mount surface (7) and is located above the top surface (S) of the base portion (2), and a semiconductor... Agent: Mcdermott Will & Emery LLP

20070086495 - Method and apparatus for stable laser drive: A laser drive controller compensates for temperature-dependent effects of a temperature-sensitive laser. Temperature variations in the laser may be measured and/or predicted based on variable pulsed output. The controller may drive the laser to maintain temperature and/or to compensate for variations in temperature. The techniques may be applied to a... Agent: Microvision, Inc.

20070086497 - Semiconductor laser device: A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode ; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide... Agent: Banner & Witcoff, Ltd., Attorneys For Reserve Attorneys For Client No. 000449, 001701

20070086498 - Semiconductor laser having an improved window layer and method for the same: A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first clad layer formed thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is... Agent: Leydig Voit & Mayer, Ltd

20070086496 - Semiconductor light emitting device: A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a... Agent: Banner & Witcoff, Ltd., Attorneys For Reserve Attorneys For Client No. 000449, 001701

20070086499 - Semiconductor light-emitting device and method of manufacturing the same: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to... Agent: Sonnenschein Nath & Rosenthal LLP

20070086500 - Integrated optical semiconductor device and manufacturing method thereof: A semiconductor laser device includes a semiconductor laser portion, a window layer structure portion, a first inter-element portion, and a pre-placed optical element portion on an InP substrate. The semiconductor laser portion includes an InGaAsP layer and an InP layer located on the InGaAsP layer. The window layer structure portion... Agent: Leydig Voit & Mayer, Ltd

20070086501 - Diode laser array coupling optic and system: A single piece optic for coupling the output of a diode laser array into an optical fiber array is provided. The coupling optic has a planar back surface which, during use with a diode laser array, is positioned substantially parallel to the front face of the laser array. The coupling... Agent: Patent Law Office Of David G. Beck

20070086502 - Optically coupled sealed-cavity resonator and process: A process to form a laterally offset photodiode for an optically coupled resonator includes implanting a semiconductor substrate to form the laterally offset photodiode adjacent to the resonator. The resonator masks the implanting underneath the resonator when the semiconductor substrate is implanted. Also disclosed is an optically coupled resonator, a... Agent: David W. Burns

20070081564 - Optically pumped surface-emitting semiconductor laser and optical projection apparatus having a semiconductor laser such as this: An optically pumped, surface-emitting semiconductor laser having a mode-selective apparatus (7) which is intended for suppression of predeterminable, higher resonator modes of the semiconductor laser. The mode-selective apparatus is arranged in the beam path of a pump beam source (2) of the surface-emitting semiconductor laser.... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20070081566 - Integrated modulator-laser structure and a method of producing same: In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe—InP island... Agent: Avago Technologies, Ltd.

20070081565 - Wavelength tunable optical transmitter and optical transceiver: A wavelength tunable laser module for DWDM is used, in which a single electroabsorption modulator integrated laser is mounted and an oscillation wavelength is made tunable by temperature control. Driving conditions of a laser and a modulator are determined such that they have approximately the same modulation and transmission characteristics... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070081567 - Driver for an optical transmitter: A modulation driver for delivering an output modulation current for driving an optical source of an optical transmitter, the output modulation current comprises a first modulation current region characterised with a first temperature gradient and a second modulation current region characterised with a second temperature gradient, said first modulation current... Agent: Buchanan, Ingersoll & Rooney PC

20070081568 - Optical semiconductor element and method for manufacturing the same: An optical semiconductor element includes a surface-emitting type semiconductor laser with a multilayered structure that emits laser light in a direction vertical to a substrate surface, a photodetecting element with a multilayered structure formed above or below the surface-emitting type semiconductor laser, and an electrostatic breakdown protection element that protects... Agent: Harness, Dickey & Pierce, P.L.C

20070081569 - Photonic quantum ring laser for low power consumption display device: A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of oscillation modes discretely multi-wavelength-oscillating in an envelope wavelength range within the gain profile of a given semiconductor material of the... Agent: Bacon & Thomas, PLLC

20070081570 - Side light emitting type semiconductor laser diode having dielectric layer formed on active layer: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate,... Agent: Buchanan, Ingersoll & Rooney PC

20070081571 - Radiation emitting semiconductor chip: A radiation-emitting semiconductor chip (1) comprising a thin-film semiconductor body (2) which has a semiconductor layer sequence with an active region (4) suitable for generating radiation, and a reflector layer (5) arranged on the thin-film semiconductor body. The semiconductor chip has a Bragg reflector in addition to the reflector layer,... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20070076770 - Passive q-switch laser: A passive Q-switch for a laser system, and a method for its production. The laser is operative at near infrared wavelength region, including the eye-safe region. The Q-switch includes a saturable absorber based on IV-VI semiconductor nanocrystals (NCs), embedded in a polymer matrix. The NCs preferably include lead selenide, lead... Agent: Edwards & Angell, LLP

20070076771 - Method and apparatus for controlling extinction ratio of light-emitting device: An apparatus for controlling an extinction ratio of a light-emitting device, includes: a temperature detecting unit that detects a temperature of the device; a power detecting unit that detects an optical output power of the device; a modulation-current detecting unit that detects a modulation current input into the device; a... Agent: Staas & Halsey LLP

20070076772 - Semiconductor laser device: Provided is a semiconductor laser device with a ridge waveguide that is excellent in polarization characteristics and easiness of mounting. In its outermost part on which the solder layer is deposited, the incomplete adherent layer is formed at least in the ridge structure. In bonding the semiconductor laser device to... Agent: Morrison & Foerster LLP

20070076773 - Buried ridge waveguide laser diode: Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first... Agent: Ladas & Parry LLP

20070076774 - Spatially-fed high-power amplifier with shaped reflectors: A spatially-fed high-power amplifier comprises one or more shaped reflectors to reflect an initial wavefront, and an active array amplifier to amplify the reflected wavefront to generate a high-power planar wavefront. The shaped reflectors provide the reflected wavefront with substantially uniform amplitude when incident on the active array amplifier. The... Agent: Thomas J. Finn, Esq. Raytheon Company

20070076775 - Semiconductor laser apparatus: A projection and a raised portion are formed on an upper surface of a blue-violet semiconductor laser device. A projection and a raised portion are formed on a lower surface of a red semiconductor laser device. The height of the projection is smaller than the height of the raised portion,... Agent: Mcdermott Will & Emery LLP

20070076776 - Technique for optically pumping alkali-metal atoms using cpt resonances: Systems and methods for optically pumping alkali-metal atoms using Coherence Population Trapping (CPT) resonances are disclosed. An illustrative push-pull optical pumping system for inducing CPT resonances in a resonance cell containing an admixture of alkali-metal atoms and one or more buffer gasses may include a laser assembly adapted to produce... Agent: Honeywell International Inc.

20070076777 - System and related control device and method for controlling power supply according to a power status: A computer system includes a main power, a backup power, an input/output (I/O) board, a main board, a computer host, and controls signal transmission and signal detection with a control device. The control device controls the main power and the backup power according to a power status. When one of... Agent: North America Intellectual Property Corporation