Coherent light generators inventions 03/07

20070071040 - Method and system for noise control in semiconductor spectroscopy system: An optical power control system for a semiconductor source spectroscopy system controls power fluctuations in the tunable signal from the spectroscopy system and thus improves the noise performance of the system. This general solution has advantages relative to other systems that simply detect reference power levels during the scan and... Agent: Houston Eliseeva

20070071041 - Laser oscillation device: A laser oscillation device, comprising optical crystals, wherein a metal or metal family film is formed over the entire surface of the optical crystals at least except openings where excitation lights enter.... Agent: Nields & Lemack

20070071042 - Method of operating laser light source: A method of operating a laser light source including a wavelength conversion device in which two wavelength laser beams are input to a nonlinear crystal to output a sum frequency wavelength, according to an embodiment of the present invention, comprises: inputting only one wavelength laser beam of the two input... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070071043 - Wavelength-selective polarization conversion element, projection displaying optical system and image projection apparatus: A wavelength-selective polarization conversion element is disclosed, which is capable of reducing the number of optical elements in an optical system and simplifying the configuration thereof. The polarization conversion element comprises a beam splitting film which splits light by transmission and reflection and has a characteristic in which at least... Agent: Morgan & Finnegan, L.L.P.

20070071044 - Temperature compensated laser focusing optics: A laser source assembly comprises a laser diode for generating a laser beam and a focusing lens for focusing the light beam. A spacer is provided for keeping the diode and the lens at a predetermined distance, and is made of a material of low expansion coefficient. Preferably, the subassembly... Agent: Kaplan Gilman Gibson & Dernier L.L.P.

20070071047 - 6k pulse repetition rate and above gas discharge laser system solid state pulse power system improvements: A method and apparatus for operating a very high repetition gas discharge laser system magnetic switch pulsed power system is disclosed, which may comprise a solid state switch, a charging power supply electrically connected to one side of the solid state switch; a charging inductor electrically connected to the other... Agent: William C. Cray Cymer, Inc.

20070071048 - Laser turn-on accelerator independent of bias control loop bandwidth: An accelerator circuit is incorporated in a laser diode system for accelerating the turn-on operation of the laser diode independent of the control loop bandwidth of the laser diode system. The accelerator circuit provides a boost current to a compensation capacitor upon laser turn-on which compensation capacitor operates to establish... Agent: Patent Law Group LLP

20070071046 - Method of monitoring and controlling a laser diode: A method of controlling a laser diode measures an average light output power of the laser diode and compares the average light output power to a desired average light output power within a target range. If the average light output power is not within the target range, the slope efficiency... Agent: Avago Technologies, Ltd.

20070071045 - Transmitter optical subassembly and transmitter optical module installing the same: To provide a transmitter optical subassembly that provides an enhanced high-frequency response without increasing the power consumption within a CAN-type package. The transmitter optical subassembly includes a semiconductor laser diode, an auxiliary circuit, and a package for installing the semiconductor laser diode and the auxiliary circuit. The auxiliary circuit generates... Agent: Smith, Gambrell & Russell

20070071050 - Laser diode device: A laser diode device capable of detecting laser light with a simple structure is provided. A laser diode device, includes a semiconductor layer formed through laminating a first conductive type layer, an active layer and a second conductive type layer in this order, the second conductive type layer including a... Agent: Rader Fishman & Grauer PLLC

20070071051 - Method of manufacturing semiconductor optical device: method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevents the V group element from escaping from the epitaxial structure during heat... Agent: Leydig Voit & Mayer, Ltd

20070071049 - Semiconductor laser unit and method for manufacturing optical reflection film: The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of... Agent: Mcdermott Will & Emery LLP

20070071052 - Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement: An integrated circuit arrangement is disclosed. In one embodiment, the integrated circuit arrangement includes at least three conductive structure levels in which in each case elongated interconnects are arranged.... Agent: Brinks Hofer Gilson & Lione Infineon

20070071053 - Integrated circuit arrangement having a plurality of conductive structure levels and coil, and a method for producing the integrated circuit arrangement: An integrated circuit arrangement is disclosed. In one embodiment, the integrated circuit arrangement includes at least three conductive structures levels and elongated interconnects.... Agent: Brinks Hofer Gilson & Lione Infineon

20070071054 - Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system: A semiconductor laser is disclosed with which a VCSEL can be constituted with a simplified configuration for optical transmission at a transmission rate higher than 10 Gbps. The semiconductor laser includes a resonator including a first active region able to emit light in response to current injection and a second... Agent: Dickstein Shapiro LLP

20070071055 - Modulation light source, image display apparatus including the same, and method of driving modulation light source: A modulation light source capable of maintaining thermal stability of a gain part is provided. A modulation light source includes a DBR laser having a DBR part, a phase part and a gain part, a light wavelength conversion device that receives a fundamental wave from the DBR laser and from... Agent: Fitzpatrick Cella Harper & Scinto

20070071056 - Laser ranging with large-format vcsel array: The present invention relates to laser ranging and detection by sequentially emitting a plurality of beams from a vertical-cavity surface-emitting laser (VCSEL) structure, re-directing the beams through optical elements such that they are fanned out over the region of view, and detecting any beams that may be reflected by objects... Agent: Avago Technologies, Ltd.

20070071057 - Blower for laser oscillator and laser oscillator: A blower (10) includes: at least two or at least three acoustic sensors or vibration sensors (31a to 31c) attached to a casing (12); and a position specifying means (34) for specifying a position of a source of abnormal sound or abnormal vibration from signals detected by the acoustic sensors... Agent: Lowe Hauptman Berner, LLP

20070071058 - Gas discharge laser system electrodes and power supply for delivering electrical energy to same: A apparatus and method are disclosed which may comprise a fluorine gas discharge laser system and electrode support system which may comprise a first electrode electrically connected to a source of high voltage; a first insulating mechanism insulating the first electrode from ground; a second electrode electrically insulated from the... Agent: William C. Cray Cymer, Inc., Legal Dept.

20070071059 - Monolithic, side-pumped, passively q-switched solid-state laser: A monolithic, side pumped, passively Q-switched, solid-state laser (10) includes a laser resonator structure (16) that includes a laser gain medium (12) having an output face bonded to a passive Q-switch (14). The gain medium (12) has a side face (12A) for receiving pump light. The pump light is preferably... Agent: Harrington & Smith, PC

20070071060 - Interferometer, in particular for determining and stabilizing the relative phase of short pulses: A description is given of an optical structure (100), in particular for determining and stabilizing the relative phase of short pulses, which contains a broadening device (6) for broadening the frequency spectrum of pulses of electromagnetic radiation, and a frequency multiplier device (8) for multiplying at least one frequency component... Agent: Schnader Harrison Segal & Lewis, LLP

20070071062 - Nanocrystal structures: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200... Agent: Steptoe & Johnson LLP

20070071061 - Tunable resonant grating filters: A tunable resonant grating filter that can reflect optical radiation at a resonant wavelength, the resonant wavelength being selectively variable. The filter includes a diffraction grating, a planar waveguide, and a light transmissive material having a selectively variable refractive index to permit tuning of the filter, the light transmissive material... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070064746 - Internal combustion engine: The invention relates to an internal combustion engine with a laser ignition device (1), Q-switched, pumped solid-state laser with a pulsed pumped light source (30), a solid laser crystal (2), enclosed in a resonator, a Q-switch (4), for increasing the power density, at least one output mirror (6) and a... Agent: Dykema Gossett PLLC

20070064747 - Passively q-switched microlaser with controllable peak power density: Geometrical design of laser microchips is disclosed that allows variation of the optical path length in the different media by simple displacement of the microchip, the movement having a non-zero projection orthogonal to the pump beam. The concept can be implemented to vary optical loss in the lasing cavity, the... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.

20070064748 - Mid-ir laser instrument for analyzing a gaseous sample and method for using the same: An optical nose for detecting the presence of molecular contaminants in gaseous samples utilizes a tunable seed laser output in conjunction with a pulsed reference laser output to generate a mid-range IR laser output in the 2 to 20 micrometer range for use as a discriminating light source in a... Agent: Smith, Gambrell & Russell

20070064749 - Deep ultraviolet laser apparatus: In order to generate efficiently a deep ultraviolet laser beam having a wavelength in a deep ultraviolet region and to make the generated laser beam to be high output, it is arranged in such that a laser beam having about 227 nm wavelength is generated by sum-frequency mixing of fourth... Agent: Birch Stewart Kolasch & Birch

20070064750 - Deep ultraviolet laser apparatus: The present invention provides a deep ultraviolet laser apparatus exhibiting high robustness which can generate laser beams in a wavelength region of wavelengths of from 198.3 to 198.8 nm, further may be loaded on a variety of apparatuses as a light source for lighting, and is practicable and a size... Agent: Birch Stewart Kolasch & Birch

20070064751 - Light emitting device: A light emitting device includes a light emitting element which emits light with a first wavelength; and a light emitting conversion unit for converting the light with the first wavelength by using wavelength conversion materials including a short wavelength conversion material and a long wavelength conversion material, the short wavelength... Agent: Ndq&m Watchstone LLP

20070064752 - Multi-wavelength semiconductor laser: Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.... Agent: Steptoe & Johnson LLP

20070064753 - Optical device with integrated semi-conductor laser source and integrated optical isolator: The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction... Agent: Lowe Hauptman Gilman & Berner, LLP

20070064757 - Avalanche quantum intersubband transition semiconductor laser: Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a... Agent: Mayer, Brown, Rowe & Maw LLP

20070064755 - External cavity type semiconductor laser: An external cavity type semiconductor laser that has a larger output and a more excellent single mode characteristic than a conventional external cavity type semiconductor laser is provided. The external cavity type semiconductor laser has a laser diode 11, a window glass 16, a grating, and a lens. The external... Agent: Rader Fishman & Grauer PLLC

20070064758 - Laser diode and laser diode device: A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a... Agent: Rader Fishman & Grauer PLLC

20070064756 - Light source: In a first broad aspect, the invention provides a light source. The light source includes a semiconductor laser for emitting laser light at a first frequency. The light source also includes an optical fibre that includes a fibre Bragg grating. The fibre Bragg grating is optically coupled to the semiconductor... Agent: Louis Tessier

20070064759 - Method for manufacturing semiconductor laser device and semiconductor laser device: An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be... Agent: Sughrue Mion, PLLC

20070064754 - Semiconductor laser device: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The... Agent: Drinker Biddle & Reath (dc)

20070064760 - Optical amplification in miniaturized polymer cavity resonators: An optical device for providing optical amplification comprises a substrate, a radiation sensitive polymer structure provided on the substrate in a shape defined by a number of sidewalls, n, and being doped with an optically active medium, wherein the sidewalls of the structure form a cavity resonator so that an... Agent: Knobbe Martens Olson & Bear LLP

20070064761 - Optical transmission apparatus: Optical transmission apparatus 100 is provided with laser element 101 and optical fiber 102 and has an optimum position where the efficiency of optical coupling between laser element 101 and optical fiber 102 becomes a maximum. Laser element 101 and optical fiber 102 are fixed at positions shifted from the... Agent: Stevens, Davis, Miller & Mosher, LLP

20070058685 - Hybrid mopa having narrowband oscillator and amplifier with integrated optical coupling: A waveguide to waveguide coupled hybrid master oscillator power amplifier (MOPA) includes a wavelength locked laser master oscillator (MO) first chip including a semiconductor substrate, a waveguide region having a gain section, one side of the MO including an integrated wavelength selective feedback element and the other side of the... Agent: Akerman Senterfitt

20070058686 - Active optical antenna: A new class of photonic devices called active optical antennas, which consist of metallic structures directly integrated on to the facet of a semiconductor lasers, and of instruments based on such antennas are disclosed. The structures consist of metallic elements which function as antennas at optical wavelengths by spatially concentrating... Agent: 24ip Law Group Usa, PLLC

20070058687 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5e18 cm−3) of a fourth clad layer (110) of the infrared semiconductor laser device is higher... Agent: Steptoe & Johnson LLP

20070058688 - End pumping vertical external cavity surface emitting laser: A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed... Agent: Buchanan, Ingersoll & Rooney PC

20070053386 - Apparatus and method for controlling optical power level: An apparatus and a method for controlling an optical power level are provided. The apparatus includes a power supply unit supplying power in response to an exposure control signal corresponding to an input image signal and a light scanning unit driven using the power and irradiating light having optical power... Agent: Roylance, Abrams, Berdo & Goodman, L.l.p.

20070053388 - Coherent light source and optical device: It is easy to increase output with a wide stripe laser, but the lateral mode is a multimode, and the coupling efficiency is low with a single-mode fiber or a single-mode waveguide, creating problems in terms of increasing output. To solve these problems, the light emitted from a wide stripe... Agent: Wenderoth, Lind & Ponack L.l.p.

20070053387 - Laser apparatus for generating a visible laser beam: A diode pumped laser apparatus for generating a visible power beam, of the type comprising: a miniaturised linear laser cavity (72) with very low losses, comprising at least the following optical elements (30,33,36,10,20): reflecting means (30;33;36), highly reflecting at a fundamental wavelength, at least one of said reflecting means (33)... Agent: The Firm Of Karl F Ross

20070053389 - Method of manufacturing crystal oscillator: A method of manufacturing a crystal oscillator comprises: processing a crystal wafer, which has higher oscillation frequency inversely proportional to its thickness, into a thickness for a lower oscillation frequency than a reference oscillation frequency; measuring and storing the oscillation frequency of each area located lengthwise and crosswise of the... Agent: Edwards & Angell, LLP

20070053390 - Injection locked diode lasers: A method is provided for modulating the output of a high-power diode laser device (SL) using an injected light signal from a low-power diode laser device (ML). The output of the high-power device (SL) is wavelength modulated by the input signal from the low-power device (ML). In addition, a new... Agent: Philips Intellectual Property & Standards

20070053391 - Laser pulse generator: A laser pulse generator utilizes an optical modulator to generate wave pulses having customized temporally shaped pulses. A continuous wavelength laser source inserts optical energy into an optical pulse generator, which in turn emits light into an amplification stage. The amplification stage emits light pulses corresponding to user-defined amplitudes and... Agent: Stephen G Rudisill Jenkens & Gilchrist

20070053392 - Optical transmitting module including laser diode mounted on driver circuit: The present invention is to provide alight emitting module that improves the positional precision of a semiconductor laser diode. A light emitting module of the present invention is configured with a semiconductor laser diode having a facet which inputs, or outputs light; an integrated circuit which is electrically connected to... Agent: Smith, Gambrell & Russell

20070053393 - Apparatus and method for self-phase control with stimulated brillouin scattering phase conjugate mirror: Disclosed are an apparatus and a method for controlling phases of beams to make relative phases of the beams “O” in a beam splitting amplification laser using a stimulated Brillouin scattering phase conjugate mirror. A procedure of making a phase difference between laser beams reflected from the phrase conjugate miror... Agent: Mayer & Williams Pc

20070053394 - Cooling device using direct deposition of diode heat pump: A diode heat pump is disclosed which may be deposited directly onto a processor unit using thin-film deposition techniques to achieve more efficient cooling. The diode heat pump is either formed in situ on the processor unit or attached to the processor unit after each unit has been manufactured. Further... Agent: Borealis Technical Limited

20070053395 - Semiconductor laser driving unit and image forming apparatus having the same: A semiconductor laser driving unit is disclosed that includes a first part generating a bias current; a second part generating a first current for causing the semiconductor laser to emit light, and outputting the first current to the semiconductor laser in accordance with an input control signal; a third part... Agent: Cooper & Dunham, LLP

20070053396 - Semiconductor lasers utilizing algaasp: A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of... Agent: Patent Law Office Of David G. Beck

20070053397 - Angled faceted emitter: A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled... Agent: Min, Hsieh & Hack LLP

20070053398 - Semiconductor laser device: A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance... Agent: Leydig Voit & Mayer, Ltd

20070053399 - Vertical cavity surface emitting laser including trench and proton implant isolation: A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region.... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070053400 - Mitigation of photodarkening to achieve laser oscillation and amplification with highly doped fibers: Photodarkening in active fiber or waveguide devices (e.g. lasers, amplifiers, and incoherent sources such as ASE sources) can be reduced by altering the dopant concentration along the length of the doped fiber. A fiber or waveguide device includes two or more intentionally doped fiber or waveguide sections having different concentrations... Agent: Lumen Intellectual Property Services, Inc.

20070053401 - Highly repetitive laser system having a compact design: The invention relates to a highly repetitive laser system operating according to the reproducible amplifier principle. Said system comprises at least one amplified laser medium, a laser resonator provided with at least one resonator mirror and at least one modulator and a pump source, in particular, a laser diode source,... Agent: Oliff & Berridge, Plc

20070053402 - Geodesic device comprising a laser source: A laser source (2) is used in a geodesic device (1) to improve the emission of laser light in which the laser diodes (2b) emitting multimodal radiation are influenced by a mode-selective component (2d) such that the laser radiation emitted by the laser-source (2) has monomodal character. An edge-emitter (2b)... Agent: Workman Nydegger

20070053403 - Laser cavity pumping configuration: A laser cavity includes at least a first mirror and a second mirror, at least one gain medium located on an optical path between said mirrors, and an optical waveguide for providing pump light. A beam splitter is arranged to split the pump light from the optical waveguide into at... Agent: Smyrski Law Group, A Professional Corporation

20070053404 - Complex-coupled distributed feedback semiconductor laser: The invention provides a distributed feedback semiconductor laser, having (1) a controlled complex-coupling coefficient which is not affected by grating etching depth variation, and (2) facet power asymmetry with no facet reflection which eliminates a random effect of facet grating phase. The device comprises a multiple-quantum-well active region, and a... Agent: Toshiko Makino, Ph.d.

20070047598 - Automatic dispersion compensation in amplification for short pulse fiber laser system: A fiber Chirped Pulse Amplification (CPA) laser system includes a fiber mode-locking oscillator for generating a laser for projecting to a fiber stretcher for stretching a pulse width of the laser wherein the stretcher further comprising a Photonic Bandgap (PBG) fiber having a lower nonlinearity and an abnormal dispersion than... Agent: Bo-in Lin

20070047596 - Photonic band-gap fiber based mode locked fiber laser at one micron: A fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump. The fiber laser cavity further includes a positive dispersion fiber segment and a negative dispersion fiber segment for generating a net negative dispersion for balancing a self-phase modulation (SPM) and... Agent: Bo-in Lin

20070047597 - Pulse picking and cleaning in short pulse high energy fiber laser system: A Chirped pulse amplification (CPA) fiber laser system. The CPA fiber laser system includes a fiber mode-locking oscillator for generating a laser to project to a pulse stretcher for stretching a pulse width of the laser. The CPA fiber laser system further includes a pulse picking up device to pick... Agent: Bo-in Lin

20070047595 - Spectrum broadening and recompression in high-energy fiber laser system: A fiber Chirped Pulse Amplification (CPA) laser system includes a fiber mode-locking oscillator for generating a laser for projecting to a fiber stretcher for stretching a pulse width of the laser. The fiber CPA laser further includes a multistage amplifier for amplifying the laser for projecting into a pulse shaper... Agent: Bo-in Lin

20070047599 - Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-ir semiconductor lasers: A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length,... Agent: Conley Rose, P.C.

20070047600 - Low-noise monolithic microchip lasers capable of producing wavelengths ranging from ir to uv based on efficient and cost-effective frequency conversion: A method for producing low-noise laser output at wavelengths ranging from IR through visible to UV in various operation modes from a monolithic microchip laser comprises schemes of (1) generating one or two fundamental beam(s) from light source(s) selected upon the desired wavelength(s), polarization(s), and other features related to the... Agent: Pavilion Integration Corporation

20070047601 - Laser pulse multiplier: A device for generating a plurality of laser pulses from a recirculating single laser pulse in an optical delay line that is capable of partially transmitting the trapped pulse out of the delay line. The energy of the partially reflected trapped pulse is restored before beginning another round trip in... Agent: David U. L. Yu

20070047602 - Driver circuit for semiconductor laser diode: The present invention provides an LD driver able to stably control the output power and the extinction ratio of the optical signal without regarding the coupling mode, the AC mode or the DC mode, between the laser diode and the LD driver. The LD driver includes the peak hold and... Agent: Venable LLP

20070047604 - Optical apparatus having a laser light source unit, and image recording apparatus: There is provided an optical apparatus having a laser light source unit including: a laser light source unit structured so as to make laser light, which is emitted at a semiconductor laser fixed within a housing, into a laser beam and emit the laser beam; a holding member to which... Agent: Taiyo Corporation

20070047603 - Optical transmitter with monitoring photodiode compensated in temperature dependence thereof: The optical transmitter according to the present invention is capable of reducing wavelength fluctuations of a semiconductor laser (laser diode) owing to the temperature dependence of the light reception sensitivity of the monitoring photodiode. The optical transmitter comprises an optical transmitting module, an LD driver, a temperature sensor, a memory,... Agent: Fish & Richardson P.C.

20070047605 - Laser power control arrangements in electro-optical readers: Laser power control arrangements interrupt power to a laser used in electro-optical readers upon detection of an over-power condition not conforming to preestablished standards to meet prevalent safety standards.... Agent: Kirschstein, Ottinger, Israel & Schiffmiller, P.C.

20070047606 - Edge emitting semiconductor laser with short gain region: Systems and methods for short length gain regions in edge emitting lasers. After forming the lower layers of a laser on a substrate, the active layer is formed. The active layer is then selectively etched. The unetched portion of the active layer corresponds to an active region of the laser.... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070047607 - Surface emitting type optical semiconductor device: It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction... Agent: Amin, Turocy & Calvin, LLP

20070047608 - Use of volume bragg gratings for the conditioning of laser emission characteristics: Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting device, conditions one or more characteristics of the input light, and causes... Agent: Woodcock Washburn LLP

20070047609 - Wafer testing of edge emitting lasers: Methods and apparatuses for wafer testing edge emitting lasers and providing a vertical emission from an edge emitting laser. A plurality of edge emitting lasers can be formed on a semiconductor wafer. One or more grooves can be etched into the semiconductor wafer to form etched facets for the edge... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070047610 - High frequency discharge excited gas laser oscillator: A high-frequency discharge excited gas laser oscillator receiving power from a laser power supply controlled by a pulse command, the high-frequency discharge excited gas laser oscillator provided with a power detecting section for detecting supply power from the laser power supply to a discharge tube and a pulse command control... Agent: Lowe Hauptman Berner, LLP

20070047611 - Side-pumped solid-state laser source, and pumping process for a solid-state laser source: The side-pumped solid-state laser source comprises a resonant cavity defined by at least two spaced-apart mirrors, an active medium of laser crystal type placed in said resonant cavity, and a pumping source, the layout of the resonant cavity, defined by the crystal and by the mirrors, being arranged to cause... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.