Coherent light generators inventions 02/07

20070041409 - Injection locked high power laser systems: A high power laser system comprising: a master laser; and a primary slave laser oscillator including a cavity comprising a rare earth doped fiber, said primary slave laser oscillator being actively injection-locked to said master laser, wherein said cavity provides an output exceeding 1 W of optical power.... Agent: Corning Incorporated

20070041410 - Apparatus for fabricating a display device: Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON/OFF the... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070041411 - Opto-electronic device comprising an integrated laser and an integrated modulator and associated method of production: The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The invention is aimed at an ILM device comprising... Agent: Lowe Hauptman Gilman & Berner, LLP

20070041412 - Phonon laser: A phonon laser pumped by a thermal gradient, the phonon laser having a coherent phonon pumping media, a heat source and a heat sink. The pumping media includes an array of micro resonators and a thermal phonon emitting media.... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070041413 - Semiconductor laser diode with current restricting layer and fabrication method thereof: Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and... Agent: Buchanan, Ingersoll & Rooney PC

20070041414 - Semiconductor laser showing reduced sensitivity to disturbances: A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into... Agent: Cohen, Pontani, Lieberman & Pavane

20070041415 - Wavelength tunable distributed bragg reflector (dbr) laser: The present invention is to provide a wavelength tunable DBR laser having the wider wavelength tuning characteristic, able to attain a 6 nm or more continuous wavelength shift and also higher in output power than a conventional wavelength tunable DBR laser. The DBR laser is constituted such that optical waveguides... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070041416 - Tunable long-wavelength vcsel system: A vertical cavity surface emitting laser system is provided including providing a epitaxially grown bottom spacer layer, an active layer on the epitaxially grown bottom spacer layer, a top spacer layer on the active layer, and etching a part of the epitaxially grown top spacer layer on a side opposite... Agent: Avago Technologies, Ltd.

20070041417 - Lighting system: A lighting system includes a microwave resonator (2) for generating a standing microwave in the internal space, and a gas cell (6) enclosing a medium is disposed in the internal space of the microwave resonator 2. The lighting system excites the medium in the gas cell (6) by the standing... Agent: Rankin, Hill, Porter & Clark LLP

20070041418 - Pulsed rf high pressure co2 lasers: An improved laser system includes a sealed-off, RF excited, diffusion cooled, high pressure, short pulsed, high peak power waveguide and slab CO2 laser that avoids problems typically associated with obtaining a diffused discharge at high gas pressures, without arcing and without corona, while maintaining the unsaturated gain and gas temperature... Agent: Stallman & Pollock LLP

20070041419 - Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises... Agent: Avago Technologies, Ltd.

20070041420 - Solid-state laser device: A solid-state laser device includes: a first solid-state laser medium 1 that emits light at a first wavelength that produces fluorescence through excitation; a second solid-state laser medium 2 that is arranged coaxially, is excited by the light at the first wavelength emitted by the first solid-state laser medium 1,... Agent: Birch Stewart Kolasch & Birch

20070041421 - Holographic element for stabilizing coupled laser and shg resonators: It is often desirable to transform near-infrared lasers to lasers of visible light. Disclosed embodiments describe devices and techniques for efficiently doubling the frequency of a laser beam using volume holographic elements. A volume holographic element is placed between a pump laser and an SHG cavity. If the pump laser... Agent: Texas Instruments Incorporated

20070036183 - Line narrowing module, light source of exposure apparatus comprising the same, and method of producing exposure light using line narrowing: A line narrowing module includes an elliptical mirror having first and second foci and having an opening adjacent to the second focus, a diffraction grating disposed at the first focus so as to separate an incident beam into different lines, and a laser beam dispersion and extraction unit. The laser... Agent: Volentine Francos, & Whitt PLLC

20070036184 - Laser apparatus for material processing: Apparatus for material processing, which apparatus comprises a rare-earth doped fibre (1), a laser diode source (2), a short pulse laser (18) and a controller (9), wherein the rare-earth doped fibre (1) is pumped by the laser diode source (2) to provide optical radiation (10), and the optical radiation (10)... Agent: John S Reid Reidlaw

20070036185 - Laser system: A laser system 1 is composed of a temperature control section 12 that has a Peltier device 9, a heat sink 10, and a base plate 11; and a laser section 8 that has a laser diode 2, a lens 3, a grating 5, a first support member 5, and... Agent: Rader Fishman & Grauer PLLC

20070036187 - High power vertical external cavity surface emitting laser: Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer;... Agent: Buchanan, Ingersoll & Rooney PC

20070036186 - Nitride semiconductor vertical cavity surface emitting laser: In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride... Agent: Avago Technologies, Ltd.

20070036188 - Semiconductor laser, optical element, laser device, and method of controlling semiconductor laser: A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070036189 - Vertical cavity surface emitting laser device: A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective-mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes... Agent: Fitzpatrick Cella Harper & Scinto

20070036190 - High power diode laser based source: A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically... Agent: Patent Docket Administrator Lowenstein Sandler P.C.

20070036191 - Micro-lens built-in laser capable of adjusting a light radiation angle and method of manufacturing the same: A micro-lens built-in laser includes a light source, a transparent layer and a micro-lens. The light source emits light. The micro-lens and the light source are formed on a same substrate in a same semiconductor process. The micro-lens refracts and adjusts light beams emitted from the light source, and the... Agent: North America Intellectual Property Corporation

20070036193 - Laser with brayton cycle outlet pump: A chemical oxygen-iodine laser (COIL) comprises an oxygen generator and a nozzle for accelerating generated oxygen to a high or supersonic velocity. A laser cavity is coupled to the nozzle, wherein the accelerated fluid, with injected iodine, is employed as a laser gain medium. A Brayton cycle outlet pump employs... Agent: Chevron Phillips Chemical Company Lp

20070036194 - Excimer-lamp pumped semiconductor laser: In an optically pumped semiconductor laser including a semiconductor laser heterostructure, energy of high-energy electrons of an electron beam is converted by excimer formation and dissociation in a gas into ultraviolet (UV) radiation. The ultraviolet radiation is used to optically pump the heterostructure. Materials of the heterostructure may include II-VI... Agent: Stallman & Pollock LLP

20070036195 - Active element for a laser source and laser source comprising such an active element: The active element (1) comprises an elongate rod (2) that comprises a doped matrix capable of absorbing at least one pump beam (3) in order to amplify at least laser radiation (4) propagating longitudinally, the length and the doping of said elongate rod (2) being such that the proportion of... Agent: Stevens Davis Miller & Mosher, LLP

20070036196 - Method of forming mirrors by surface transformation of empty spaces in solid state materials: A multi-layered reflective mirror formed of spaced-apart plate-shaped empty space patterns formed within a substrate is disclosed. The plurality of plate-shaped empty space patterns are formed by drilling holes in the substrate and annealing the substrate to form the spaced-apart plate-shaped empty space patterns.... Agent: Dickstein Shapiro LLP

20070030865 - External cavity tunable compact mid-ir laser: A compact mid-IR laser device utilizes an external cavity to tune the laser. The external cavity may employ a Littrow or Littman cavity arrangement. In the Littrow cavity arrangement, a filter, such as a grating, is rotated to provide wavelength gain medium selectivity. In the Littman cavity arrangement, a reflector... Agent: Foley & Lardner

20070030866 - Semiconductor laser having spot-size converter and method of fabricating the same: A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on the substrate to convert an optical mode of the emitted laser; and an upper layer formed on the gain... Agent: Cha & Reiter, LLC

20070030867 - Liquid crystal display: A liquid crystal display according to an embodiment of the present invention includes: a liquid crystal panel assembly comprising a plurality of first field-generating electrodes, a second field-generating electrode facing the first field-generating electrodes, a liquid crystal layer disposed between the first field-generating electrodes and the second field-generating electrode, and... Agent: Macpherson Kwok Chen & Heid LLP

20070030868 - Driving circuit and driving method for laser light source: A driving circuit comprises: a constant-current source which supplies a current to a photodiode so as to forward-bias the photodiode; detecting means for detecting the forward voltage of the photodiode; determining means for determining whether or not the forward voltage detected by the detecting means is smaller than a predetermined... Agent: Chadbourne & Parke, L.L.P.

20070030869 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer... Agent: Leydig Voit & Mayer, Ltd

20070030870 - Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth: The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p-type AlInAs or InGaAsP overgrowth layers, for example.... Agent: Agilent Technologies Inc.

20070030871 - Semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and method for manufacturing the same: A semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and a method for manufacturing the same are provided. The semiconductor device includes a p-type semiconductor layer of a GaN based compound formed on a substrate, a p-type carbon nanotube layer, and a... Agent: Marger Johnson & Mccollom, P.C.

20070030872 - Laser diode: A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the... Agent: Sonnenschein Nath & Rosenthal LLP

20070030873 - Polarization control in vcsels using photonics crystals: An optical device including a polarization control photonic crystal. The optical device includes a vertical cavity surface emitting laser. The optical device further includes a lower mirror formed on a substrate. The optical device also includes an upper mirror. An active region is between the lower mirror and the upper... Agent: Workman Nydegger (f/k/a Workman Nydegger & Seeley)

20070030874 - Surface-emitting laser element and laser module using the same: A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed... Agent: C. Irvin Mcclelland Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070030875 - Laser processing device: A laser processing device (100) includes a laser oscillator (2), a laser machine (11) and a control means (1) for controlling the laser oscillator and the laser machine. The control means includes a storage means (50) for storing the processing program (60) for the work to be processed. The storage... Agent: Lowe Hauptman Berner, LLP

20070030877 - Apparatus and method for monitoring power of a uv laser: An excimer laser includes a chamber for containing laser gas, electrodes in the chamber disposed to excite the laser gas, thereby producing optical emissions, first and second mirrors arranged to form a resonator cavity, and a detector disposed to receive a portion of light transmitted through the first mirror. The... Agent: Knobbe Martens Olson & Bear LLP

20070030876 - Apparatus and method for purging and recharging excimer laser gases: A method of recharging an excimer laser Includes opening an outlet in a chamber containing spent laser gas at a first pressure, opening an inlet in the chamber, the inlet in communication with a laser gas container at a second pressure higher than the first pressure, and flowing fresh laser... Agent: Knobbe Martens Olson & Bear LLP

20070030878 - Laser arrangement and method for the generation of a multimode operation with intracavity frequency doubling: In a laser arrangement and a method for generating a multimode operation with intracavity frequency doubling, the object of the invention is to eliminate fluctuations in output caused by the nonlinear coupling between the longitudinal modes due to sum frequency generation in a simple laser construction which has increased thermal... Agent: Reed Smith, LLP Attn: Patent Records Department

20070025401 - Medical laser apparatus: A medical laser apparatus for performing treatment by irradiating an affected part with a laser beam comprises: a fiber laser source with variable output power, which emits an infrared fundamental laser beam; a wavelength converting element which wavelength-converts the fundamental beam to a visible second harmonic laser beam and is... Agent: Oliff & Berridge, PLC

20070025402 - Method and apparatus for controlling the temperature of a laser module in a printing plate exposer: An apparatus and a method control the temperature of a laser module having laser diodes in an external drum printing plate exposer. In the external drum printing plate exposer, there is not sufficient space to permit cooling of the laser modules by Peltier elements, because of the construction. Cooling of... Agent: Lerner Greenberg Stemer LLP

20070025403 - Semiconductor wafer and method of manufacturing semiconductor device: A graded SiGe buffer layer 12 and a SiGe buffer layer 13 are formed on a Si substrate 11. A strained Si layer 14 having a critical film thickness or less is formed to decrease a stress applied to an interface between the strained Si layer 14 and the SiGe... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070025404 - Optical element and method for manufacturing the same: An optical element includes a surface-emitting type semiconductor laser, a photodetector element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, and a light-receiving element that receives laser light from outside. The photodetector element has a first photoabsorption layer formed above a substrate. The surface-emitting... Agent: Harness, Dickey & Pierce, P.L.C

20070025406 - Semiconductor laser array and semiconductor laser device: A semiconductor laser array is described. The semiconductor laser array may include a plurality of semiconductor laser elements including a first laser element and a second laser element. The first laser element may be configured to emit a shorter wavelength laser than the second laser element. The emission portion of... Agent: Banner & Witcoff, Ltd., Attorneys For Reserve Attorneys For Client No. 000449, 001701

20070025407 - Long-wavelength vcsel system with heat sink: A long-wavelength VCSEL system is provided including providing a bottom mirror, a heat sink surrounding the bottom mirror, a wafer on the bottom mirror and the heat sink, and a backside contact on the wafer on a side opposite the bottom mirror.... Agent: Avago Technologies, Ltd.

20070025408 - Long-wavelength vcsel system with implant current confinement: The present invention provides a long-wavelength VCSEL system providing a buried layer, growing a top spacer layer on the buried layer, forming an active layer on the top spacer layer, and creating a current confinement structure in the buried layer with a post epitaxy ion implantation.... Agent: Avago Technologies, Ltd.

20070025405 - Bidirectional transceiver assembly for pof application: A bidirectional transceiver assembly includes a VCSEL structure that emits light at a defined wavelength on a substrate structure. A photodetector receives the light. A hole structure is formed on the substrate structure to allow the light from the VCSEL structure to be emitted so as to form an optical... Agent: Gauthier & Connors, LLP

20070025409 - All-silicon raman amplifiers and lasers based on micro ring resonators: Devices for generating a laser beam are disclosed. The devices include a silicon micro ring having at least one silicon optical waveguide disposed at a distance from the micro ring. The radius and the cross-sectional dimension of the microring, the cross-sectional dimension of the waveguide, and the distance between the... Agent: Wilmer Cutler Pickering Hale And Dorr LLP Columbia University

20070025410 - Chg ring resonators: A ring resonator structure includes a semiconductor substrate, a core, and a cladding. Either the core or the cladding comprises chalcogenide glass to improve electromagnetic confinement in the ring resonator structure.... Agent: Gauthier & Connors, LLP