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Coherent light generators January USPTO class patent listing 01/07

20070019688 - Infra-red multi-wavelength laser source: The present invention relates in particular to the field of lasers and in particular to a laser source having a neodymium-doped crystal (2;23) or fiber and pumpable by pumping means (3; 25) and a non-linear Raman effect converter stimulated in methane (4; 32), characterized in that the crystal (2; 23)... Agent: Oliff & Berridge, PLC

20070019689 - Diode pumped alkali vapor fiber laser: A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid... Agent: Deputy Laboratory Counsel For Intellectual Propert

20070019690 - Pickup head circuits: Pickup head circuits with a protection circuit capable of preventing unexpected large current flowing through a laser diode during power-on interval. A driving transistor is coupled between a laser diode and a first power voltage, an automatic laser power control (ALPC) circuit is coupled between the first power voltage and... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20070019691 - Waveguide laser light source suitable for projection displays: The invention relates to a semiconductor diode laser used to pump a waveguide and their use as light source. A waveguide laser (15) according to the present invention producing visible wavelength radiation from IR wavelength radiation comprising: a) at least one semiconductor diode laser or diode laser bar (8) producing... Agent: Philips Intellectual Property & Standards

20070019692 - Semiconductor laser device and hologram apparatus using the semiconductor laser device: A semiconductor laser device, with a semiconductor laser element operable to oscillate and output a laser beam, is provided with a heat generation unit operable to generate heat so as to regulate the temperature of the semiconductor laser element, a laser beam splitting unit operable to split a laser beam,... Agent: Fish & Richardson P.C.

20070019693 - Wireless power beaming to common electronic devices: A method and apparatus for wireless power beaming consisting of a transmitter assembly (20), free space (40), and an optical-to-electric assembly (50). The transmitter assembly (20) has eye-safe lasers (26) that create a beam of light (90). The beam of light goes through free space (40) and impinges upon the... Agent: David Graham

20070019694 - Laser module having controlled optical power density at exposed surfaces: A laser module includes: one or more semiconductor laser elements which emit one or more laser beams; an optical fiber which has a light-entrance end face; and an optical condensing system which is constituted by one or more optical components and makes the one or more laser beams converge at... Agent: Sughrue Mion, PLLC

20070019695 - Optical and element: An optical AND element includes a semiconductor laser having a plurality of saturable absorption regions on an optical waveguide, electrodes of the saturable absorption regions being separated from each other, and a light inputting section for inputting light into the respective saturable absorption regions.... Agent: Sughrue Mion, PLLC

20070019696 - Vertical cavity surface emitting laser and method for fabricating the same: The invention relates to a vertical cavity surface emitting laser and method for fabricating the same. The vertical cavity surface emitting laser of the invention comprises: a substrate, a first reflector, an active layer, a second reflector, a first electrode layer and a second electrode layer. The second reflector has... Agent: Volentine Francos, & Whitt PLLC

20070019697 - Vcsel system with transverse p/n junction: The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon... Agent: Avago Technologies, Ltd.

20070019698 - Semiconductor laser device and method for fabricating the same: A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a first second-conductive-type cladding layer stacked in this order on... Agent: Mcdermott Will & Emery LLP

20070019699 - Light emitting device and method of manufacture: A light emitting device is manufactured by forming a light emitting structure upon a buffer layer formed on a substrate. The light emitting structure is then separated from the buffer layer and the substrate. A light-directing element such as a mirror or a lens is then attached to the light... Agent: Avago Technologies, Ltd.

20070019700 - Method and apparatus for multiple, discrete wavelength laser diode pumping of solid state laser materials: Diode pumped solid state lasers normally require the temperature of the diodes to be controlled so that the diode laser wavelength will match a strong absorption line in the solid state material. This requires heating and cooling equipment that adds size, weight, cost and complexity to the laser design. For... Agent: Department Of The Army Cecom Legal Office, Fort Belvoir

20070019701 - Laser with hybrid-unstable ring resonator: A unidirectional ring laser oscillator has a travelling wave unstable mode in one transverse dimension and either a waveguide or freespace Gaussian mode in the orthogonal transverse dimension for coupling to large volumes of asymmetric cross section laser gain media. This device concept is shown to have unique and innovative... Agent: Heslin Rothenberg Farley & Mesiti PC

20070019702 - Lenses, optical sources, and their couplings: A lens may operate in the mid-IR spectral region and couple highly divergent beams into highly collimated beams. In combination with a light source having a characteristic output beam, the lens may provide highly stable, miniaturized mid-IR sources that deliver optical beams. An advanced mounting system may provide long term... Agent: Foley & Lardner

20070014317 - Compression design for high energy short pulse fiber laser: A fiber Chirped Pulse Amplification (CPA) laser system includes a fiber mode-locking oscillator for generating a laser for projecting to a fiber stretcher for stretching a pulse width of the laser. The fiber CPA laser system further includes a multistage amplifier for amplifying the laser and a high-order dispersion compensating... Agent: Bo-in Lin

20070014318 - Display screens having optical fluorescent materials: Fluorescent screens and display systems and devices based on such screens using at least one excitation optical beam to excite one or more fluorescent materials on a screen which emit light to form images. The fluorescent materials may include phosphor materials and non-phosphor materials such as quantum dots. A screen... Agent: Fish & Richardson, PC

20070014319 - Continuously tunable external cavity diode laser sources with high tuning and switching rates and extended tuning ranges: An external cavity structure including: a light source for generating a light beam; a dispersive system which in combination with the light source defines a cavity, the dispersive system for directing a selected wavelength of the light beam back into the light source, the dispersive system including a grating for... Agent: Wilmer Cutler Pickering Hale And Dorr LLP

20070014320 - Laser diode-pumped monolithic solid state laser device and method for application of said device: The invention relates to an intracavity-doubled laser device, comprising a pumping laser-diode, a Nd:YAG amplifying medium stimulated by a laser beam with a fundamental wavelength emitted by the laser diode, the output face of said amplifying medium being cut at the Brewster angle for said fundamental wavelength and a birefringent... Agent: Young & Thompson

20070014321 - Laser package and laser module: A laser package has at least one laser device and a hermetically sealed package including a package base and a cap having a light transmissive window for emitting light. The at least one laser device is placed in the package and fixed onto the package base. Further, a plurality of... Agent: Sughrue Mion, PLLC

20070014322 - Electromagnetic energy distributions for electromagnetically induced mechanical cutting: Output optical energy pulses including relatively high energy magnitudes at the beginning of each pulse are disclosed. As a result of the relatively high energy magnitudes which lead each pulse, the leading edge of each pulse includes a relatively large slope. This slope is preferably greater than or equal to... Agent: Stout, Uxa, Buyan & Mullins LLP

20070014323 - Semiconductor device and method for manufacturing the same: Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type... Agent: C. Irvin Mcclelland Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070014324 - Vertical cavity surface emitting laser: In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines... Agent: David R. Metzger Sonnenschein Nath & Rosenthal LLP

20070014325 - Optically pumped semiconductor laser: An optically pumped semiconductor laser and an optical pumping method are disclosed. The optically pumped semiconductor laser includes first and second reflective bodies forming a resonant region therebetween, a gain medium disposed between the first and second reflective bodies; and a light source for applying a source light to the... Agent: Cha & Reiter, LLC

20070014326 - Line narrowed laser apparatus: The control of the spectral purity width E95 is performed while imparting practically no effect to the control of a central wavelength, and the spectral purity width E95 is stabilized. A wavefront adjuster 32 is provided on an output side of the interior of an optical resonator, i.e., on an... Agent: Welsh & Katz, Ltd

20070008994 - Method and configurations in achieving high energy operation for photonic band gap (pgb) fiber with end caps: A fiber Chirped Pulse Amplification (CPA) laser system includes a photonics band gap (PBG) fiber to function as a compressor. The PBG fiber is spliced with a fiber end cap that has an core expander for increasing a mode area of the PBG fiber. With increased mode area, the laser... Agent: Bo-in Lin

20070008995 - Frequency-stabilized laser and frequency stabilizing method: The invention provides a frequency-stabilized laser and frequency-stabilizing method capable of stabilizing an oscillation frequency of laser beam. A photodetector detects an optical output signal obtained when a reference laser beam transmits through an absorption cell. A third-order differential signal detector generates a third-order differential signal of the optical output... Agent: Oliff & Berridge, PLC

20070008996 - Laser wavelength stabilization for pumping purposes using adjusted fabry-perot filter: In a wavelength-stabilized pumped laser, the Fabry-Perot cavity of the laser chip is initially tuned so as to fit at least two absorption lines of the pumping medium. A Fabry-Perot cavity of a filter disposed in the cavity selects multiple lines fitting the absorption lines of the pumping medium.... Agent: Blank Rome LLP

20070008997 - Optical element and optical module: An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies... Agent: Oliff & Berridge, PLC

20070008998 - Semiconductor light emitting device: According to the present invention, plural Group III nitride based compound layers with different compositions are placed between an active layer and a hole supply layer for smoothly moving holes to the active layer by using Coulomb forces from polarization charges caused by the difference in composition among the Group... Agent: Hogan & Hartson L.L.P.

20070008999 - Broadened waveguide for interband cascade lasers: Interband cascade lasers having high-refractive index semiconductor spacer layers within the active regions are disclosed. Together with spacer layers which may be provided outside the active regions, broadened waveguides are formed which increase brightness and decrease divergence of the lasers. In one embodiment, current may be supplied laterally through the... Agent: Alan G. Towner Pietragallo, Bosick & Gordon

20070009000 - Semiconductor laser device: A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region... Agent: Banner & Witcoff, Ltd., Attorneys For Reserve Attorneys For Client No. 000449, 001701

20070009001 - Semiconductor laser device: A semiconductor laser device includes: on an n-GaAs substrate, an n-type cladding layer of n-(Al0.3Ga0.7)0.5In1.5P, an n-side guide layer of i-In0.49Ga0.51P lattice-matched to GaAs, an active layer having a larger refractive index than the n-side guide layer, and including an In0.07Ga0.93As quantum well layer, a p-side guide layer of i-In0.49Ga0.51P,... Agent: Leydig Voit & Mayer, Ltd

20070009002 - Semiconductor laser array beam transformer/equalizer: An optical system that improves and equalizes the beam quality of a semiconductor laser array. The semiconductor lasers are arranged along a first axis, and the second axis has a higher beam quality than the first axis. The system includes a high-efficiency optical device that transforms light beams emitted from... Agent: Irell & Manella LLP

20070009003 - Optically pumped semiconductor laser: An optically pumped semiconductor laser and an optical pumping method are disclosed. The optically pumped semiconductor laser includes an output mirror and a reflective mirror for forming a resonant region therebetween, a gain medium disposed between the output mirror and the reflective mirror and a light source for applying a... Agent: Cha & Reiter, LLC

20070009004 - Efficient method and apparatus for generating singlet delta oxygen at an elevated pressure: An improved singlet delta oxygen generator (SOG) and method of its use are disclosed. The improved SOG is compact and scalable, capable of operating in a zero-gravity or low gravity environment, requires no gaseous diluent or buffer gas, and is capable of operating at pressures as high as one atmosphere.... Agent: Storm LLP