Coherent light generators inventions 10/06

20060239304 - High powered tem00 mode pulsed laser: A high power pulsed laser having a Q-switched seed laser lasing at a preselected wavelength at TEM00 mode to produce a pulsed seed beam is disclosed. One or more substantially non-depolarizing optical amplifier media namely Nd:YVO4 or Nd:GVO4 crystals are used in optical communication with the seed laser. The optical...

20060239305 - Optically triggered q-switched photonic crystal laser and method of switching the same: An improvement in a method of controlling lasing in a semiconductor laser fabricated in a photonic crystal laser having a plurality of holes into which a birefringent material with low refractive losses and low optical loses with controllable spatial refractive index orientation has been infiltrated comprises the step of rotating...

20060239306 - Characterization and non-invasive correction of operational control currents of a tuneable laser: A tuneable multi-section semiconductor laser 100 is characterized by applying currents in step-wise increments to sections 101, 102, 103 of the laser respectively and measuring power output by the laser to determine values of the applied currents corresponding to stable operating conditions for which the laser emits radiation at wavelengths...

20060239307 - Injection locking type or mopa type of laser device: An injection locking type or MOPA type of laser device capable of always providing stable output energy and wavelength is provided. For this purpose, the laser device includes an oscillator for exciting laser gas by oscillator discharge and oscillating seed laser light with band-narrowed wavelength, an amplifier for amplifying the...

20060239308 - Polarization switching and control in vertical cavity surface emitting lasers: A fast current-controlled polarization switching VCSEL with two independent intra-cavity p-contact electrodes and two independent intra-cavity n-contact electrodes positioned along the four sides of the symmetric aperture such that there are two independent p- and n-contact pairs placed on opposite sides of the aperture in a non-overlapping configuration. The anisotropy...

20060239310 - High definition digital media data cable system: The present invention provides a cable assembly and method of making thereof for use with HDMI/DVI connectors. The cable assembly of the present invention includes a flat extruded cable jacket that includes an oblong cross section. Parallel oblong orifices lie across the cross section of the extruded jacket, extend the...

20060239309 - Two-stage laser pulse energy control device and two-stage laser system: A charging voltage Vosc applied to a main capacitor C0 disposed in an oscillating high-voltage pulse generator 12 of an oscillating laser 100 is subject to constant control such that a pulse energy Posc of the oscillating laser 100 becomes a lower limit energy Es0 or more of an amplification...

20060239311 - Semiconductor laser device, optical disk apparatus and optical integrated unit: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer,...

20060239312 - Semiconductor lasers in optical phase-locked loops: This invention relates to opto-electronic systems using semiconductor lasers driven by feedback control circuits that control the laser's optical phase and frequency. Feedback control provides a means for coherent phased laser array operation and reduced phase noise. Systems and methods to coherently combine a multiplicity of lasers driven to provide...

20060239316 - Apparatus for controlling temperature of optical module using uncooled laser diode: The present invention relates to an apparatus for controlling temperature of an optical module using an uncooled laser diode. A first setup unit for establishing low-temperature setup voltage and a second setup unit for establishing high-temperature setup voltage determine first and second threshold voltages suitable for low-temperature and high-temperature setup...

20060239314 - Electro-optic transducer die mounted directly upon a temperature sensing device: An optical transmitter having an electro-optic transducer mounted directly on a temperature sensor. Due to the close proximity of the electro-optic transducer and the temperature sensor, the temperature sensor more accurately measures the temperature of the electro-optic transducer. This permits for more refined control of the frequency characteristics of optical...

20060239313 - Optical transmit assembly including thermally isolated laser, temperature sensor, and temperature driver: An optical transmit assembly in which a laser and temperature sensor are mounted on a first substrate without other heat generating components. Other heat generating components may be mounted on a second substrate that is separated from the first substrate by a thermally resistance mechanism. Accordingly, heat that is generated...

20060239315 - Temperature sensing device patterned on an electro-optic transducer die: An optical transmit assembly having a temperature sensor patterned on an electro-optic transducer die. Due to the close proximity of the electro-optic transducer junction and the temperature sensor, the temperature sensor more accurately measures the temperature of the electro-optic transducer junction. This permits for more refined control of the frequency...

20060239319 - Chip carrier apparatus and method: A chip carrier having improver thermal properties, wherein the chip carrier may be formed having waist section, and a first transverse end portion joined to the waist section. A first surface of the carrier being configured to receive a chip thereon, and a second surface of the carrier configured to...

20060239317 - Laser apparatus and method for assembling the same: A laser apparatus includes: one or more semiconductor lasers emitting one or more laser beams; an optical fiber; an optical condensing system which makes the one or more laser beams enter the optical fiber from a light-entrance end of the optical fiber; and a package which fixedly contains the optical...

20060239318 - Semiconductor laser: A semiconductor laser improved in heat sinkability of portions in the vicinity of a light-emitting end face of a main body in order to prevent occurrence of COD is provided. A main body 150 having a light-emitting end face 150a for emitting laser light is formed on a semiconductor substrate,...

20060239320 - Compound semiconductor laser device: A compound semiconductor laser device has a semiconductor substrate of first conduction type and a plurality of layers sequentially formed on the substrate. The plurality of layers include first and second cladding layers of the first conduction type, a third cladding layer of second conduction type, and an active layer...

20060239321 - Semiconductor laser device: A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single...

20060239322 - Excimer laser device, laser gas exchange method and partial gas exchange quantity calculation method: To provide an excimer laser device and method in which the frequency of full gas exchange within the laser chamber is reduced, and more preferably full gas exchange is made unnecessary. The gas supply device and gas exhaust device are controlled so that the laser gas in the laser chamber...

20060239323 - Pumping system for a laser source and laser source comprising such a pumping system: The pumping system (1) comprises at least one pump diode (12) capable of emitting a pump beam (5), the wavelength of which varies with temperature, at least one collimation means (13), and at least one selective mirror (14) comprising a plurality of spectral reflectivity peaks for locking the operation of...

20060239324 - Laser device and wavelength selecting method in laser device: A stable wavelength selecting action is realized by controlling a laser wavelength to permit a fast wavelength sweeping without mechanically turning a heavy-mass member. A laser device comprising a laser resonator including a mirror (12) having a specified transparency and an adaptive optics (10) provided with a mirror capable of...

20060239325 - Surface gratings on vcsels for polarization pinning: A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer...

20060233205 - Mode-matching system for tunable external cavity laser: An external cavity laser includes a lasing cavity and an optically coupled feedback cavity having differently spaced resonant lasing and feedback mode frequencies. The lasing modes can be collectively or individually matched to selected feedback modes. For example, a current driving the lasing cavity can be adjusted to shift individual...

20060233206 - Frequency doubling crystal and frequency doubled external cavity laser: A periodically poled second harmonic generating crystal having a long axis, said crystal comprising Magnesium Oxide doped Congruent Lithium Niobate, Magnesium Oxide doped Stoichiometric Lithium Niobate, Stoichiometric Lithium Tantalate or Potassium Titanyl Phosphate wherein the poling planes of said periodically poled crystal are canted relative to said axis and a...

20060233207 - Light receiving circuit, semiconductor laser device, and optical pickup device: The light receiving circuit is provided with a photodiode 4 for LD power monitoring and an I-V amplifier 5 connected with a feedback resistor 13, wherein a light receiving section 16 of the photodiode 4 is covered with a protective film 19. Temperature dependences between a light transmittance of the...

20060233208 - Optical scanning device, control method of optical scanning device, and image display apparatus: An optical scanning device includes a plurality of light source sections for supplying beams, and a scanning section for directing beams emitted from the light source sections to scan in a first direction and a second direction substantially perpendicular to the first direction on a beam-receiving region. The scanning section...

20060233209 - Solid body: Solid body for the production of solid-state lasers, the solid body having, at least in an optically used area, monoclinic elementary cells based on the same crystallographic system of coordinates, and having in the optically used area at least two domains with different chemical compositions, the optically used area having...

20060233211 - Group iii nitride led with undoped cladding layer: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III...

20060233210 - Semiconductor laser device, method for manufacturing the same, and optical pickup device using the same: The present invention provides a semiconductor laser device having a high reliability and desirable temperature characteristics while being a high-power device. An active layer, and two cladding layers sandwiching the active layer therebetween are formed on a substrate. One of the cladding layers forms a mesa-shaped ridge, and the ridge...

20060233212 - Blower used for laser oscillator: In an laser oscillator (100), a blower (10, 20, 120) for circulating a laser medium between an electric discharge tube (102) and a circulating passage (104) includes: a casing (12) having a suction port (12a) and an exhaust port (12b); and a blade (18) pivotally supported in the casing (12)...

20060233213 - Multi-quantum well optical waveguide with broadband optical gain: A multi-quantum well optical waveguide structure comprises a plurality of active regions including quantum wells with different gain peak wavelengths to provide an ultra broadband optical gain spectrum. Two adjacent sets of active regions having a large band gap difference are connected by a tunneling injection layer to provide smooth...

20060233214 - Hybrid electrode support bar: An excimer or molecular fluorine gas discharge laser which may comprise a pair of electrodes extending longitudinally across a lasing chamber forming a discharge region, and method of operating same, is disclosed which may comprise a fan providing sufficient gas movement to allow for arc-free laser operation at a selected...

20060233215 - Compact high power laser dazzling device: A compact high power laser dazzling device includes at least one heat sink, multiple laser resonators and an optical head. Each of the laser resonators extends axially from a first end, fixedly mounted to the heat sink, to a second end emitting an individual laser beam. The optical head is...

20060227816 - All fiber based short pulse amplification at one micron: A fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump. The fiber laser cavity further includes a positive dispersion fiber segment and a negative dispersion fiber segment for generating a net negative dispersion for balancing a self-phase modulation (SPM) and...

20060227817 - Laser module for projecting a linear laser beam: A laser module includes a main body having a first end, a second end, and a bore connecting the first and second ends, the bore having a rotational axis that is transverse to the bore. The laser module also includes a laser beam generating device retained in the bore for...

20060227818 - Fundamental-frequency monolithic mode-locked laser including multiple gain absorber pairs: A monolithic mode-locked diode laser with improved uniformity of light distribution along the cavity. The laser includes a multiple gain section with more than one gain subsection where the length of each subsection is less than the reciprocal gain coefficient in the gain subsection and a multiple saturable absorber section...

20060227819 - Solid state laser device: The transmittance of an etalon relative to an oscillating line having the wavelength of 1061.6 to 1062.2 nm by an Nd:YAG laser medium 3 is set to 0.9 or lower (the maximum value of the transmittance is 1.0). The oscillating line of the wavelength of 1061.6 to 1062.6 nm is...

20060227820 - Tunable laser: A tunable extended cavity laser is disclosed having a single flexure pivot or hinge forming a pivot axis about which a grating tuning element is rotated. The pivot axis does not move appreciably as the grating is pivoted. The most preferred embodiment of the flexure hinge is a cartwheel hinge....

20060227821 - Tunable laser: A tunable extended cavity laser is disclosed having a single flexure pivot or hinge forming a pivot axis about which a grating tuning element is rotated. The pivot axis does not move appreciably as the grating is pivoted. The most preferred embodiment of the flexure hinge is a cartwheel hinge....

20060227823 - Electroabsorption vertical cavity surface emitting laser modulator and/or detector: An electroabsorption vertical cavity surface emitting laser modulator and/or detector includes a lower reflector, an upper reflector, a middle reflector, a gain region, and an absorber region integrated into a semiconductor die. The middle reflector is disposed between the lower and upper reflectors. Together, the lower and middle reflectors define...

20060227822 - Laser trim pump: A technique for compensating for the effects of thermo-optic distortions in a solid state laser gain medium, and reducing optical path differences in the laser. A diode array coupled to the laser gain medium is selectively modulated to provide pump power, the intensity of which varies across the aperture of...

20060227824 - Spectral conditioning mechanism: An optical assembly is disclosed. The optical assembly includes a laser having a front facet and a rear facet a thin film filter (TFF) to receive a first optical signal from the front facet of the laser and to reflect a component of the first optical signal back to the...

20060227825 - Mode-locked quantum dot laser with controllable gain properties by multiple stacking: The optical gain and the differential gain of a quantum dot gain region in a gain section of a passive or hybrid mode-locked laser is varied by stacking at least two planes of quantum dots. All quantum dot planes are preferably formed by the same fabrication method and under the...

20060227826 - Collector mirror for plasma-based, short-wavelength radiation sources: The invention is directed to a collector mirror for short-wavelength radiation based on a plasma. It is the object of the invention to find a novel possibility for managing the temperature of a collector mirror for focusing short-wavelength radiation generated from a plasma which allows an efficient thermal connection to...

20060227827 - Semiconductor laser device and heat sink used therein: A semiconductor laser device has a heat sink of which laminated plural plates are constituted and a semiconductor laser element mounted on upper surface of the heat sink. The heat sink has a channel in which a coolant flows inside thereof. The heat sink includes a channel-forming plate portion that...

20060227828 - Damping of parasitic resonance using a resistive parallel conductor: Circuits and methods for damping out parasitic resonance within a packaged integrated circuit (IC) are provided. A conductive path including a resistor and a conductor is added in parallel with a conductive path that provides power to components within a die of the packaged IC. When implemented in a packaged...

20060227829 - Glaze soldered laser components and method of manufacturing: A glaze soldered solid-state laser active medium. The novel laser active medium includes a first section of a first material, a second section of a second material, and a layer of ceramic glaze joining the two sections. The first and second materials may be identical, similar, or dissimilar, and may...

20060227830 - High pressure field emitter, photoionization, plasma initiation and field devices: At least one exemplary embodiment is directed to a propulsion device that ionizes a portion of a medium and E×B drifts the ionized portion providing thrust where the ionized portion is created using high pressure field emitters comprising: a substrate layer; a gate layer; a field emitter tip; and a...

20060227831 - Semiconductor laser apparatus: A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from...

20060227832 - Semiconductor laser apparatus and production method thereof: A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer 100,...

20060227833 - Wavelength locked laser including integrated wavelength selecting total internal reflection (tir) structure: An integrated light emitting semiconductor device having integrated feedback for wavelength locking comprises a semiconductor substrate including a waveguide region having a gain section having a gain media therein, and an out-coupling perturbation integrated with the device disposed proximate to the waveguide. A total internal reflection (TIR) structure for providing...

20060227834 - Member having antireflection structure: A reflection of unnecessary light, which should be prevented, can be suppressed, and occurrence of stray light can be reduced using a member having an antireflection structure, comprising a plate-like portion 2, and an aperture portion 3 formed in the plate-like portion 2, wherein the antireflection structure having an aspect...

20060227837 - Quantum dot vertical cavity surface emitting laser and fabrication method of the same: A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed...

20060227838 - Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in...

20060227836 - Surface emitting semiconductor laser array and optical transmission system using the same: A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser...

20060227835 - Surface-emitting laser diode with tunnel junction and fabrication method thereof: A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction...

20060227839 - Gas discharge laser output light beam parameter control: A line narrowed gas discharge laser system and method of operation are disclosed which may comprise: an oscillator cavity; a laser chamber comprising a chamber housing containing a lasing medium gas; at least one peaking capacitor electrically connected to the chamber housing and to a first one of a pair...

20060227840 - Visual display with electro-optical addressing architecture: A display device and method of operating the display device. The display device comprising a support substrate, a plurality of light emitting resonators placed in a matrix on the support substrate forming a plurality of rows and columns of the light emitting resonators, a plurality of light waveguides positioned on...

20060227842 - Scalable spherical laser: A spherical laser includes a transparent or semi-transparent outer spherical vessel having an internal cavity, an amplifying medium in the cavity, and means to excite the amplifying medium. The sphere is provided with a partially reflective coating to act as a spherical optical resonator. Excitation of the amplifying medium produces...

20060227841 - Tube solid-state laser: An improved tube solid-state laser (SSL) is provided utilizing diode pumping, microchannel cooling, optics, and/or new coating and bonding processes. Advantageously, thermal lensing effects, birefringence, bifocussing, and alignment problems associated with typical tube SSLs are eliminated or reduced while providing high beam quality and high average power levels....

20060227843 - Gas/liquid separation utilizing bunched mesh materials: An apparatus and method for gas/liquid separation on an array of jets or streams of liquid is provided. Layers of substantially spherical aggregates of meshed material are provided to “quiet” high-velocity liquid flow with entrained gas to provide a uniform flow at moderate or low velocity from which the gas...

20060227844 - On-chip lenses for diverting vertical cavity surface emitting laser beams: An optical device is disclosed that includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be...

20060227845 - Displacement sensor: Optical sensors, and methods for operating optical sensors, are disclosed. One such sensor may include: a reflector positioned a distance from a reflective diffraction grating and a light source for providing light. A first portion of the light can be reflected from the reflective diffraction grating and a second portion...

20060222023 - Stabilization of actively q-switched lasers: The invention discloses an actively Q-switched laser with an intracavity nonlinear coupler in which a stable optical frequency converted output is generated. A Gain Fluctuation Insensitivity Condition is defined and described for several examples. The nonlinear coupler with a coupling level which satisfies this Condition permits stable laser operation with...

20060222024 - Mode-locked semiconductor lasers with quantum-confined active region: A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger...

20060222025 - Laser module, control method of the same, control data of the same, and control data generation method: A laser module includes a semiconductor laser, an output optical system provided on an optical output side of the semiconductor laser, a temperature detecting element that detects a temperature of the output optical system; and an output controller that calculates a drive current to set an optical output intensity of...

20060222026 - Semiconductor laser device and manufacturing method therefor: On an n-type GaAs substrate 19 are formed an n-type GaAs buffer layer 20, a non-doped AlxGa1-xAs light guide evaluation layer 21, an n-type AlxGa1-xAs first clad layer 22, an n-type AlxGa1-xAs second clad layer 23, a non-doped AlxGa1-xAs first light guide layer 24, a non-doped AlxGa1-xAs quantum well active...

20060222027 - Method for forming quantum dots by alternate growth process: Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer...

20060222028 - Semiconductor laser and method of fabricating the same: An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of...

20060222029 - Semiconductor laser and optical communication system using the same: A red semiconductor laser including a first type GaAs substrate having a set of layers sequentially formed on the substrate, which includes at least: a first conductivity type AlInGaP clad layer; an AlInGaP lower optical guide layer; a quantum well active layer made of GaInP or AlInGaP; an AlInGaP upper...

20060222030 - Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus: A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an...

20060222031 - Opto-semiconductor devices: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of...

20060222032 - Optical semiconductor element, method of manufacturing optical semiconductor element and optical module: An InGaAsP thin film layer having the same index of refraction as a diffraction grating is inserted between a p-type InP clad layer and the diffraction grating composed of an InGaAsP layer. In this structure, the InGaAsP layer is present over an active layer, and the amount of thermal diffusion...

20060222033 - Optical semiconductor device and driving method thereof: Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive...

20060222034 - 6 khz and above gas discharge laser system: A high pulse repetition rate gas discharge laser system pulse power system magnetic reactor may comprise a housing comprising a core containing compartment between an inner wall of the housing, an outer wall and a bottom wall of the housing; a cooling mechanism operative to withdraw heat from the at...

20060222035 - Alumina tube: An excimer laser includes: an alumina tube which has a purity of 99.9% by weight or more, a density of 3.99 g/cm3 or more, an open porosity of less than 0.3%, and a dielectric strength voltage of 15 kV/mm or more and which includes a hollow portion; an inner electrode...

20060222036 - Semiconductor laser device and method of fabricating the same: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having...

20060222037 - Semiconductor laser diode: A semiconductor laser diode includes a semiconductor cladding layer of a first conductivity type, an active layer on the semiconductor cladding layer of the first conductivity type, a semiconductor cladding layer of a second conductivity type on the active layer, an insulating film on the semiconductor cladding layer of the...

20060222038 - Tunable laser: A tunable laser has a multiple ring resonator comprising a plurality of ring resonators having respective ring-shaped waveguides and respective different optical path lengths, an input/output side optical waveguide coupled to the multiple ring resonator, an optical input/output device such as a laser diode coupled to the input/output side optical...

20060222039 - Tunable laser: A tunable laser has a multiple ring resonator comprising a plurality of ring resonators having respective ring-shaped waveguides and respective different optical path lengths, an input/output side optical waveguide coupled to the multiple ring resonator, an optical input/output device such as a laser diode coupled to the input/output side optical...

20060222040 - Radiation-emitting semiconductor component: A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material,...

20060222041 - Beam homogenizer and laser irradiation apparatus: The present invention provides a beam homogenizer for homogenizing energy distribution by making the distance between lenses small to shorten the optical path length with the use of an array lens of an optical path shortened type, and a laser irradiation apparatus using the beam homogenizer. The beam homogenizer is...

20060222042 - Lens holder and laser array unit using the same: In a laser array unit in which a plurality of laser beams emitted from a laser array is received by a lens array, the lens holder for fixedly bonding the lens array is formed such that the length of the surface on which the lens array is bonded in the...