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USPTO Class 372 | Browse by Industry: Previous - Next | All 08/2006 | Recent | 08: Jun | May | Apr | Mar | Feb | Jan | | 07: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | | 06: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | Coherent light generators inventions 08/06Recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.Listing format for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 08/31/2006 > 12 patent applications in 12 patent subcategories. 20060193352 - Tunable fiber laser light source: An optical fiber loop has a gain medium having a gain at an oscillation wavelength and optical circulators 13 and 14. Collimate lenses 22 and 24 enlarge light bean taken from the optical circulators 13 and 14. A polygon mirror 25 is provided on the light axis, and is rotated.... 20060193353 - High power single mode semiconductor laser device and fabrication method thereof: The present invention relates to a high-power single-mode semiconductor laser device, in which a first conductivity-type cladding layer is formed on a semiconductor substrate. An active layer is formed on the first conductivity-type cladding layer, and a second conductivity-type cladding layer is formed on the active layer, with a ridge... 20060193354 - External cavity tunable laser and control: An optical lasing device, comprising (i) a lasing medium disposed in a lasing cavity, (ii) an etalon disposed within the lasing cavity, and (iii) an electrically tuned filter device, such as a grating waveguide structure device. The lasing device also comprises a detector for determining the lasing power of the... 20060193355 - Semiconductor light emitting diode and method of manufacturing same: There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed... 20060193356 - Die level optical transduction systems: A scalable architecture based in silicon on sapphire (SOS) CMOS for building an interferometric optical detection system to sense the motion of a resonating MEMS device or to detect the motion of any object to which the system is packaged. The SOS CMOS device is packaged with both vertical cavity... 20060193357 - Light emitting device driver circuit: A driver circuit is designed employing a current sensing circuit adapted to sense driving current being supplied to one or more light emitting devices. The driver circuit additionally employs a pulse width modulation circuit adapted to modulate a pulse width of a control signal based at least in part on... 20060193358 - Tetravalent chromium doped laser materials and nir tunable lasers: A method is described to improve and produce purer Cr4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr3+, Cr2+, Cr5+, and Cr6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr4+:Ca2GeO4,... 20060193359 - Semiconductor light-emitting device: In a semiconductor laser having an active layer of double-quantum-well structure that includes two InGaN well layers each of which has a thickness of 5 nm, a threshold current deteriorates to a relatively small degree while differential efficiency is improved considerably in a region having a light confinement coefficient Γ... 20060193360 - Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer: A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to... 20060193361 - Vertical cavity surface emitting laser device having a higher optical output power: A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Tix2Inx1Ga1-x1-x2As1-y1-y2Ny1Sby2 mixed-crystal layer and a heavily-doped p-type Tix4Inx3Ga1-x3-x4As1-y3-y4Ny3Sby4 mixed-crystal... 20060193362 - Fold device for guiding beams in a laser: The use of reflecting surfaces that are inclined towards one another enables the multiple reflection of a beam path to be achieved in a laser structure. This permits the realization of compact laser assemblies. The introduction of beam-influencing media between the reflective surfaces or the configuration of said reflective surfaces... 20060193363 - Semiconductor laser device: The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens... 08/24/2006 > 25 patent applications in 20 patent subcategories.20060187973 - Eye safe high power fibre laser: Apparatus for providing optical radiation (15) comprising a pump source (19) and at least one first amplifying waveguide (1), characterised in that the first amplifying waveguide (1) emits optical radiation (15) in excess of 1400 nm when pumped by the pump source (19). In one embodiment, the pump source (19)... 20060187974 - Control system and apparatus for use with ultra-fast laser: A control system and apparatus for use with an ultra-fast laser is provided. In another aspect of the present invention, the apparatus includes a laser, pulse shaper, detection device and control system. A multiphoton intrapulse interference method is used to characterize the spectral phase of laser pulses and to compensate... 20060187975 - Variable pulse repetition frequency passively q-switched laser: A passive Q-switch element is disclosed that permits operating a laser with a variable pulse repetition frequency (PRF). The Q-switch comprises two wedges of material, one made from saturable absorber material, the other from transparent material, with the two wedges mounted together to form a constant optical thickness block. By... 20060187976 - Variable-wavelength semiconductor laser and gas sensor using same: A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light... 20060187977 - High frequency semiconductor device: A high frequency semiconductor device includes a semiconductor substrate, a high frequency semiconductor element on the semiconductor substrate, a high frequency signal transmission line connected at a first end to the high frequency semiconductor element, a high frequency signal input/output pad connected to a second end of the high frequency... 20060187978 - Laser system with short pulse characteristics and its methods of use: A laser system that includes a diode pump source. A frequency doubled solid state visible laser is pumped by the diode pump source and produces a pulsed laser output with a train of pulses. Resources provide instructions for the creation of the pulsed output, with on and off times that... 20060187979 - Laser control circuit and image forming apparatus: An image data processing section subjects input image data to image processing, and outputs first to fourth image data. First to fourth pulse width modulation circuits are PWM circuits in each of which a plurality of reference positions are set in one pixel, and output pulses corresponding to the first... 20060187980 - Thin laser module: A thin laser module comprises a casing having a light emitting window on one side; a circuit board installed in the casing for containing components; a laser chip installed on the circuit board for emitting a primary laser and a secondary laser; a photodiode (PD) packaged by surface mount technology... 20060187981 - Drive circuit and drive method for semiconductor light source: A circuit for driving a semiconductor laser including a semiconductor integrated circuit, which controls the drive of the semiconductor laser, and is connected to one end of the semiconductor laser. Moreover, the driving circuit incorporates a first power source +Vcc that supplies by way of the semiconductor integrated circuit a... 20060187982 - Method and device for determining an activation threshold: A method is provided for determining a laser threshold of a laser diode, which is operated by a drive circuit as a function of a first signal in a first feedback and a second signal in a second feedback, the first feedback being supplied via an optical coupling of an... 20060187983 - Light emitting element driving circuit, and optical transmission apparatus and optical transmission system using the same: A light emitting element driving circuit includes: plural AC-coupling capacitors which are connected together in series; and a bias generating circuit which generates a bias current, wherein a light emitting element is driven by superposing a modulating current to the bias current via the plural AC-coupling capacitors.... 20060187984 - Semiconductor light emitting device, method of manufacturing same, and optical module: A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0≦x<1,... 20060187985 - High reliability etched-facet photonic devices: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.... 20060187986 - Optical communication module and multi-mode distributed feedback laser diode: An optical communication module being adapted to transmit a first optical signal to an optical transmitting device and receive a second optical signal is provided. The optical communication module includes a multi-mode distributed feedback laser diode (MM-DFB LD) and a receiver. The first optical signal is emitted by the MM-DFB... 20060187988 - Semiconductor laser device: In various aspects, a semiconductor laser device may include a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and having a nitride semiconductor; a second clad layer of a second conductivity type provided on the active layer... 20060187989 - Semiconductor laser device: In various aspects, a semiconductor light emitting device provided between a first edge and a second edge opposite to the first edge and emitting laser from the first edge, may include: a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the... 20060187990 - Semiconductor laser device and method for manufacturing the same: The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGalnP-based clad layer formed on an active layer, and a second p-type AlGalnP-based clad... 20060187987 - Semiconductor laser diode: A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily... 20060187991 - Laterally oxidized vertical cavity surface emitting lasers: Highly compact vertical cavity surface emitting laser structures formed by a lateral oxidation process are provided. Specifically, well-controlled oxidized regions bound and define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are... 20060187992 - Light-emitting device and optical integrated device: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances... 20060187993 - Efficient room-temperature source of polarized single photons: An efficient technique for producing deterministically polarized single photons uses liquid-crystal hosts of either monomeric or oligomeric/polymeric form to preferentially align the single emitters for maximum excitation efficiency. Deterministic molecular alignment also provides deterministically polarized output photons; using planar-aligned cholesteric liquid crystal hosts as 1-D photonic-band-gap microcavities tunable to the... 20060187994 - Light-emitting apparatus, phosphor, and method of producing it: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor... 20060187995 - Low loss grating for high efficiency wavelength stabilized high power lasers: A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of... 20060187996 - Laser generator: Flow laminators are attached to gas introducing parts installed in a laser generator preventing impurities from attaching to surfaces of a translucent mirror and a condensing lens. The flow laminators prevent airflow from producing a turbulent flow and air on the surface of the mirror and the lens are cleaned... 20060187997 - Vertical cavity surface emitting laser diode: It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor... 08/17/2006 > 11 patent applications in 9 patent subcategories.20060182153 - Electronically tuned self-starting polarization shaping mode locked fiber laser: A fiber laser cavity that includes a laser gain medium for receiving an optical input projection from a laser pump. The fiber laser cavity further includes a positive dispersion fiber segment and a negative dispersion fiber segment for generating a net negative dispersion for balancing a self-phase modulation (SPM) and... 20060182155 - Method and apparatus for coupling laser beams: In a photomask projection system, a photomask mask is illuminated by light from two lasers. A beam from one of the lasers is mixed with a beam from the other laser to provide two mixed beams each containing of portion of the beams from both lasers. The mixed beams are... 20060182154 - Method of controlling laser oscillation of pulsed laser and pulsed laser system: In order to perform positional control of a condensing spot of pulsed laser beam highly accurately when performing optical modeling, optical recording or the like in optical machining technology, optical recording technology or the like which uses various kinds of pulsed laser, which are ultra-short pulsed lasers such as a... 20060182156 - Tuning a laser: A method for synchronously tuning a laser in a laser system having a set of possible resonant frequencies including a resonating mode resonant frequency, an optical amplifier with an optical gain and a mode filter having a center frequency includes the steps of determining the optical gain of the optical... 20060182157 - Laser wavelength control arrangement and method: Wavelength control and stabilization of a laser is achieved by a practical, inexpensive, and accurate technique adapted for most optical transmission system applications by a method involving a laser characterization phase and a laser wavelength control and stabilization phase. This technique is applicable to both single mode lasers and multimode... 20060182158 - Information recording reproduction apparatus and information reproduction method: An information recording reproduction apparatus includes a laser light source, a laser driving unit which supplies a laser driving signal to the laser light source to make it emit a laser light for recording and reproduction, a high frequency superimposing unit which superimposes a high frequency signal to a laser... 20060182159 - Systems and methods for automatic power control of laser diodes: Methods and system are provided for automatic power control of a laser diode, e.g., in a laser driver. In accordance with an embodiment of the present invention, a power controller includes a detector circuit adapted to detect the output of the laser diode and to produce a measured output therefrom.... 20060182160 - Smart coating system: An active coating system capable of collecting, analyzing, managing and adapting to data and/or its environment in real time. An exemplary embodiment of our inventive active coating system is corrosion resistant and includes a flexible sensor layer, a switch layer and a visual display layer. Operationally, the flexible sensor layer... 20060182161 - Semiconductor laser: A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said... 20060182162 - Solid laser exciting module and laser oscillator: A pumping module includes a plate-shaped solid state laser medium, a reflecting member disposed on a surface of the laser medium which is opposite to a light incidence surface of the laser medium, for reflecting laser light incident upon the laser medium via the light incidence surface and propagating through... 20060182163 - Two phase reactor: A two phase reactor includes a source of liquid reactant and a source of gas reactant. A chamber has an inlet coupled to the source of gas reactant and a flat jet nozzle coupled to the source of the liquid reactant.... 08/10/2006 > 17 patent applications in 15 patent subcategories.20060176911 - Composite optic fibre for laser with pump and laser wave confinement, applications to lasers: The invention relates to a composite optic fibre (1) for laser comprising a core (2) surrounded with a pump guiding sheath in contact with the core, the pump guiding sheath (4) being a photonic structure formed by a substantially regular matrix assembly of coaxial capillaries, spaced apart and arranged parallel... 20060176912 - Apparatus for projecting a line of light from a diode-laser array: A line-of-light projecting module is illuminated by a diode-laser bar and includes light-pipe for homogenizing light from the diode-laser bar in the slow-axis. A shaping optics assembly directs the light emitted by the diode-laser bar into the entrance end of the light-pipe as a diverging beam in the slow-axis and... 20060176913 - Passively q-switched laser with adjustable pulse repetition rate: A method is disclosed for varying a pulse repetition rate of a passively q-switched laser while maintaining other characteristics of the laser radiation. The laser is optically pumped with a sequence of pump pulses which includes alterations between non-zero power levels and is characterized by two adjustable parameters. By simultaneously... 20060176914 - Laser with narrow bandwidth antireflection filter for frequency selection: A laser includes a narrow bandwidth AR coating for defining a frequency range for laser emission within the laser cavity. Advantageously, the narrow-band AR coating has a very low loss, which can be particularly useful if the gain medium has low gain. The narrow-band AR coating can be used to... 20060176915 - Integrated high speed modulator for grating-outcoupled surface emitting lasers: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.... 20060176916 - Laser resonator and frequency-converted laser: An optically pumped, in particular diode-pumped, continuous solid-state laser produces a primary laser beam whose frequency is converted into the visible or ultraviolet spectral range by means of one or more downstream passive resonators with non-linear crystals. At relatively low cost and complication it is provided that precisely two longitudinal... 20060176917 - Co2 laser stabilization systems and methods: Systems and methods for stabilizing a CO2 laser are disclosed. The system includes a detector unit for measuring the power in a select portion of the output beam. The detector unit generates an electrical signal corresponding to the measured power. The modulation frequency of the signal used to modulate the... 20060176920 - Laser apparatus and manufacturing method of thin film transistor using the same: A laser apparatus comprises a laser generating unit, and an intensity pattern regulating unit including a pair of blocking parts and a pair of semi-through parts, wherein the pair of semi-through parts are placed between the pair of blocking parts and adjust an intensity of an incident laser beam.... 20060176919 - Method for driving laser element, driving circuit for laser element, optical communications apparatus, electronic device: A driving method for making a laser element to emit light by supplying a predetermined drive current to the laser element includes supplying a preliminary current smaller than the drive current immediately before supplying the drive current to the laser element, wherein substantially no current is supplied to the laser... 20060176918 - Optical module: An optical module includes a stem; a first lead pin and a second lead pin for receiving differential signals, the first and second lead pins penetrating the stem; a mount block fixed to the stem; a laser diode having a pair of electrodes; a submount mounted on the mount block... 20060176921 - Semiconductor laser device: To provide a semiconductor laser device for which a horizontal divergence angle of a laser beam can be improved independently of optimization of other properties such as a cladding layer thickness and a current injected region size. A current blocking layer covers a larger area of a p-type second cladding... 20060176922 - Semiconductor laser device: A first light feedback element is arranged at an optical distance L1 from a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front... 20060176923 - Semiconductor laser: In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a... 20060176924 - Semiconductor light emitting device having effective cooling structure and method of manufacturing the same: A semiconductor light emitting device having a high heat emission efficiency and a method of manufacturing the same without reducing the light emission efficiency are provided. The semiconductor light emitting device includes a substrate, a thermal spreading layer formed on the substrate and patterned with predetermined gaps, a planarizing layer... 20060176925 - Extreme ultra violet light source device: An LPP EUV light source device for forming a uniform droplet target regardless of a frequency of a drive signal applied to a vibrator. The LPP EUV light source device includes: a chamber in which the extreme ultra violet light is generated; an injection nozzle that injects a target material... 20060176926 - Solid state laser: A solid body laser has a crystal disk forming its laser active medium. A flat side of the crystal disk is totally reflecting. A resonator mirror configuration includes a partially transparent end mirror and one or more folding mirrors, which are disposed with spatial separation from the crystal disk, and... 20060176927 - Stabilized solid state gyrolaser without blind region: The invention concerns solid-state gyrolasers used to measure rotation speeds or relative angular positions. This type of equipment is used, in particular, in aeronautical applications. The purpose of the invention is to complete the optic devices required to control the instability of lasers, using specific optic devices that eliminate the... 08/03/2006 > 17 patent applications in 13 patent subcategories.20060171425 - Probe and method of making same: Disclosed herein are a probe and a method of making the same, and more particularly to a probe having a minute pitch, with which a probe card corresponding to arrangement of pads formed with a massed shape or other various shapes on a wafer is made, and a method of... 20060171426 - Fiber-laser with intracavity polarization maintaining coupler providing plane polarized output: A fiber-laser comprises a laser cavity including a gain-fiber. A polarization maintaining fiber coupler (PM-coupler) located in the laser cavity and configured such that the fiber-laser delivers plane-polarized output radiation. The laser cavity may be configured as a linear cavity or as a ring cavity and operated in either cavity... 20060171428 - High-power, phased-locked, laser arrays: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers... 20060171427 - Method of and device for amplifying a high-energy laser beam with no transverse lasing: The invention relates to a method of amplifying a laser beam which includes steps consisting in performing an optical pumping of an amplifying crystal so as to inject into the crystal an optical pumping energy Etotal, amplifying the laser beam by means of the amplifying crystal and an optical system... 20060171429 - Monoblock laser with reflective substrate: In an internal OPO, a substrate comprising a thin film lies along an axis and a first mirror reflects first wavelength light. A gain medium lases and polarizes light entering therein and a Q-switch attenuates and transmits first wavelength light. An HR/HT mirror passes first wavelength light and reflects a... 20060171430 - Broad-band optical semiconductor device and a method for manufacturing the same: Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection... 20060171432 - Optical beam output controller and optical disk device: The present invention enables to stably output an optical beam. The present invention provides an upper limit value comparator for comparing a low bandwidth signal according to an output intensity of an optical beam emitted to an optical disk in the case of reproducing data from the optical disk with... 20060171431 - Optical module having case grounding using bypass capacitor: According to embodiments of the present invention, an optical transponder includes a transmitter optical subassembly (TOSA). In one embodiment, the electrical ground of the TOSA may be DC-isolated from chassis ground of the transponder using a blocking capacitor that couples the AC signal path to VDD and that allows the... 20060171433 - Solid-state laser with compensation for thermooptical effects: To compensate for undesirable thermooptical effects in optical pumping of solid-state laser rods, regions of the lateral surface are heated in such a way that reverse thermal gradients are created at these locations. This is achieved by providing said regions with a radiation-absorbing layer which is heated by pump radiation... 20060171434 - Semiconductor laser device and a method of mounting a semiconductor laser component on a submount: The present invention provides a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component, wherein the semiconductor laser component is mounted on a... 20060171435 - Semiconductor laser, method of mounting semiconductor laser, semiconductor laser mounted structure, and optical disk system: An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and... 20060171436 - Solid laser apparatus: Moreover, a solid laser apparatus has a pseudo notch filter (9h), which is arranged for the gain to have a local minimum at the relaxation oscillating frequency of the solid laser apparatus, provided in the output control circuit (8,9,10) so that the peak of the gain transmission characteristic of the... 20060171437 - Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than... 20060171438 - Extended-lifetime elements for excimer lasers: The invention is directed to elements used in high power laser lithographic systems operating at below 250 nm, and in particular to elements that have a coating of selected materials to extend lifetime of the elements; and to a method of preparing the extended lifetime elements. The invention is particularly... 20060171439 - Master oscillator - power amplifier excimer laser system: A Master Oscillator (MO)—Power Amplifier (PA) configuration (MOPA) can be used advantageously in an excimer laser system for micro-lithography applications, where semiconductor manufacturers demand powers of 40 W or more in order to support the throughput requirements of advanced lithography scanner systems. A MOPA-based laser system can provide both high... 20060171440 - Apparatus for generating improved laser beam: A selective reflector, for selectively preventing reflection of light passing therethrough. The selective reflector comprising at least one layer characterized by an angle-dependent reflectivity function. The angle-dependent reflectivity function being decreasing upon at least one interval of increasing impinging angle of the light on a surface of the at least... 20060171441 - Semiconductor laser holder: In a semiconductor laser holder for holding a frame-type semiconductor laser composed of a frame plate formed of metal and having a laser element mounted on the top face thereof and a frame package formed of resin, formed so as to surround the laser element from the front, rear, left,... Previous industry: Multiplex communicationsNext industry: Industrial electric heating furnaces ###### RSS FEED for 20080717: Integrate FreshPatents.com into your RSS reader/aggregator or website to track weekly updates. For more info, read this article. ###### Thank you for viewing Coherent light generators patents on the FreshPatents.com website. These are patent applications which have been filed in the United States. 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