Coherent light generators inventions 05/06

20060109873 - External cavity laser having improved single mode operation: Stable single mode operation of an external cavity semiconductor laser is obtained by a laser control method that monitors at least one optical beam which is generated by reflection from a wavelength selective element within the laser cavity. The method of the present invention provides stable single mode operation and...

20060109872 - Modeless wavelength-agile laser: An external cavity laser may be swept rapidly in frequency and cavity length to prevent formation of modes providing improved spectral response and light characteristics....

20060109874 - Laser processing method and laser processing apparatus: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the...

20060109875 - Depolarized laser diode module and depolarized laser diode light source: t

20060109876 - Method and system for combining multiple laser beams using transmission holographic methodologies: The Holographic Beam Combiner, (HBC), is used to combine the output from many lasers into a single-aperture, diffraction-limited beam. The HBC is based on the storage of multiple holographic gratings in the same spatial location. By using a photopolymer material such as quinone-doped polymethyl methacrylate (PMMA) that uses a novel...

20060109877 - External cavity laser with adaptive fiber bragg grating (fbg) for minimizing noise related to stimulated brillouin scattering (sbs) in dispersive fiber links: An optical transmitter including an external cavity laser for generating an optical signal, and transmitting the optical signal over a dispersive fiber optic link. The optical transmitter includes an electronic circuit coupled to the external cavity laser to change spectral characteristics of the external cavity laser through changing physical properties...

20060109878 - Scalable zig-zag laser amplifier: A solid state laser amplifier architecture in which multiple zig-zag slab laser amplifiers (50) are stacked together, side-pumped using a common pump source (52, 54), and cooled with a common cooling system. The stack of zig-zag slabs (50) produces an array of sub-beams (62) that can be combined coherently into...

20060109879 - Compensation of mode jumps in multi section lasers: The invention provides a method and system for compensating variations in tuning efficiency and power of a multi-section tunable laser diode. The invention comprises a means to obtain a set of values for a specific section of the laser diode and a means to normalise the values to compensate the...

20060109880 - Wafer laser crystal: The present invention concerns a laser with a laser crystal in wafer form. In order to provide a laser apparatus with laser materials in wafer form which are improved over the state of the art, and a process for the production of improved laser materials in wafer form for such...

20060109882 - Diode laser module and method for the production thereof: In a diode laser module and a method for the production thereof, there is a need to fix the optical elements required for collimating, beam shaping and/or beam rearrangement of the radiation of a laser diode element with high reproducibility and long-term stability in an optically aligned manner, wherein the...

20060109881 - Semiconductor laser diode and method of fabricating the same: A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper...

20060109883 - Apparatus, system, and method for junction isolation of arrays of surface emitting lasers: An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array....

20060109884 - Distributed feedback semiconductor laser and method for manufacturing the same: A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer; a clad layer formed adjacent to the active layer; and diffraction gratings periodically formed in the clad layer and separated from each...

20060104319 - Device for reflecting and detecting electromagnetic radiation: A device for simultaneously detecting and reflecting electromagnetic radiation consisting of a thin layer of insulating pyro-electric and/or piezoelectric material sandwiched between two conducting electrodes. The upper-most electrode is effective to separate the radiation into a reflected part and an unreflected part, which is absorbed, and the insulating layer has...

20060104320 - Method and apparatus for forming a plurality of laser beams with ultraviolet wavelength, and laser machining apparatus: The invention provides a method and an apparatus for forming a plurality of ultraviolet-wavelength laser beams, and a laser machining apparatus, in which the machining efficiency can be improved due to easy maintenance and inspection while deterioration of wavelength conversion means can be prevented to reduce the running cost. A...

20060104321 - Q-modulated semiconductor laser with electro-absorptive grating structures: A Q-modulated semiconductor laser comprises a λ/4-phase-shifted distributed-feedback grating. Two isolated electrodes are deposited on top of the grating, and one electrode is deposited on the back side of the laser substrate as a common ground. The first top-side electrode covers a portion of the grating including the phase-shift region,...

20060104322 - Temperature-independent external cavity laser: Hybrid-type external cavity lasers designed to have a semiconductor laser diode mounted on a planar waveguide platform by a flip-chip bonding method. The temperature independent external cavity laser comprises a semiconductor laser diode, a planar waveguide platform, and a thin film multi-layered reflection filter. The semiconductor laser diode includes an...

20060104323 - Systems and methods for reducing harmonics produced by oscillators: Systems and methods for reducing the harmonic content of an oscillator are provided. More specifically, waveforms with reduced harmonics are provided, as are waveform generators for producing such waveforms. Such waveform generators can be used in or with a laser driver. However, the present invention is not meant to be...

20060104326 - Funnel structure vecsel: A surface emitting laser apparatus is disclosed. A first substrate is disposed between a first electrode layer and a first reflective layer. An active region is disposed between the first reflective layer and a second reflective layer. A current blocking layer is disposed above the active region to form an...

20060104325 - Laser diode and method of fabricating the same: A laser diode without a ridge and a method of fabricating the same are provided. The laser diode includes an active layer and upper and lower clad layers. A current blocking layer formed of a semiconductor material is formed on the upper clad layer, and a current passing region is...

20060104324 - Semiconductor laser apparatus: Arrayed DBR (Distributed Bragg Reflector) laser shows a problem that spectrum purity is deteriorated when a current is flowed in a semiconductor optical amplifier for attaining a sufficient optical output. In addition, the arrayed waveguide grating laser shows a problem that the spectrum purity is deteriorated by leakage of light....

20060104328 - Method for measuring vcsel reverse bias leakage in an optical module: Reverse bias leakage testing may be used to determine the health of a vertical cavity surface emitting laser (VCSEL). When VCSELs are integrated on a die with other electronic devices such testing may damage the other electronic devices or be prohibited by circuits on the die designed to protect the...

20060104327 - Semiconductor optical pumping device for radiation emission and the production method thereof: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for...

20060104329 - Apparatus for diode laser beam quality control: Method and apparatus are disclosed for controlling the beam quality from LDA by using external cavity feedback to improve the slow axis divergence of LDA to be close to diffraction limited. The external cavity described in the present invention will only reflect beams in a predetermined direction, and inject the...

20060098694 - Optical fiber for fiber laser, fiber laser, and laser oscillation method: An optical fiber for a fiber laser has: a hollow core region; an inner cladding region having a plurality of holes that extend in a longitudinal direction of the optical fiber and surround the hollow core region; and an outer cladding region that surrounds the inner cladding region. The inner...

20060098695 - Optically measuring electric field intensities: An apparatus includes an optical resonator and a passive optical device. The optical resonator has first and second optical reflectors and an optical cavity interposed between the reflectors. The optical resonator includes an electro-optically responsive material. One of the reflectors is a distributed Bragg reflector. A passive optical device is...

20060098696 - Laser pumped tunable lasers: A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—wherein the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches,...

20060098697 - Wavelength tunable light source module for wavelength division multiplexing passive optical network system: Disclosed is a wavelength tunable light source module for wavelength division multiplexing passive optical network systems, which is capable of being realizing at low costs, increasing utility of wavelength resources, and facilitating mass production. The wavelength tunable light source module comprising: a temperature adjustment unit for raising or lowering ambient...

20060098698 - Frequency-converting lasers with non-linear materials optimized for high power operation: A frequency-converted laser may be made with a non-linear material having a surface coated with an anti-reflection coating by measuring an absorbance of the anti-refection coating, and using the non-linear crystal for frequency conversion in the laser if the absorbance measured is less than a rejection threshold of about 100...

20060098699 - Laser optics integrated control system and method of operation: A controller (320) for controlling various operational parameters of the Laser Module (303). The modulation drive signal (300) causes the circuits in the driver (301) to send a signal to the output (302) so that the laser can send an optical power output (304) proportional to the drive signal (300)....

20060098700 - Method and a laser device for producing high optical power density: The invention relates to a method and laser device for producing a high optical power density by forming laser bars (LB) of diode lasers (E) in a manner that in a single laser bar (LB) the slow axes (x) of adjacent diode lasers (E) are positioned relative to each other...

20060098701 - Optical transmitter: The present invention provides an optical transmitter that includes a configuration and a circuit capable of operating in a high frequency. The optical transmitter of the invention provides a supplemental circuit within the package, which includes a transistor, typically an n-type FET, with the drain connecting to the anode of...

20060098702 - Alterable frequency coherent light generator: An alterable frequency coherent light generator for the generation of highly energy efficient coherent light, by means of a power supply connected to a four-lead capacitor, which is connected to a variable resistive device in series with a vacuumed bulb. The direct current being conducted through the circuit is formed...

20060098704 - Semiconductor laser: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches...

20060098703 - Semiconductor light emitting device: A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01≦x<0.06 as the n-type cladding layer. As the Al composition ratio x decreases below 0.06, the AlGaN layer...

20060098705 - Nano-vcsel device and fabrication thereof using nano-colonnades: A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a...

20060098706 - Surface-emitting type semiconductor laser: To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110; a first mirror 142 provided above the substrate 110; an active layer 144 provided above...

20060098707 - Method for fabricating laser diode with oxidation barrier layers: A method of manufacturing a laser diode having an active layer made from semiconductor substances containing aluminum is disclosed. The method comprises the steps of forming a first mask, which has first and second slits spaced apart from each other, on a substrate, forming first and second oxidation barrier layers,...

20060092989 - Etalon cavity with filler layer for thermal tuning: A temperature-stable and temperature-tunable composite etalon with an increased field of view is constructed by partially filling the cavity with a transmissive parallel-plate filler. The coefficient of thermal expansion and the index of refraction of the filler material are selected so as to produce the desired rate of change of...

20060092990 - Laser processing apparatus and laser processing method: To process a surface of a substrate by applying a laser beam to the surface, while liquid is being applied to the surface, distance between the surface of the substrate and a reference point on the axis of a laser displacement meter, distance between the surface of the substrate and...

20060092991 - Monoblock laser: An improved monoblock laser cavity is made by elongating the Optical parametric oscillation (OPO) cavity. This can be accomplished by changing the coatings on the OPO material and Q-switch and by elongating the OPO cavity to approximately 2 to 3 times the OPO crystal length. The increase in the length...

20060092992 - Monoblock laser: An improved monoblock laser cavity is made by applying circular apodizing coatings to the various components of the monoblock laser. The apodization of the laser cavity faces improves the beam divergence of the laser and thus, increases brightness, by encouraging only the lower order modes to lase....

20060092994 - High-power amplified spectrally combined mode-locked laser: An amplified commonly mode-locked and/or Q-switched external cavity laser device with a plurality of gain elements and a plurality of amplifying elements is described. The device produces amplified optical pulses of picosecond to nanoseconds duration. The amplified pulses can be used in applications requiring large optical pulse energy and also...

20060092993 - High-power mode-locked laser device: A mode-locked external cavity laser device includes a plurality of gain elements with corresponding end mirrors, and a diffracting element that diffracts optical beams emitted by the gain elements and combines the diffracted optical beams to form an overlapping output beam. A mode-locking device that intercepts the overlapping output beam...

20060092995 - High-power mode-locked laser system: A multi-wavelength, commonly mode-locked external cavity laser system includes a solid state gain element generating a collinearly propagating multi-wavelength optical beam, a diffracting element that diffracts the multi-wavelength optical beam into a plurality of diffracted optical beams, a wavelength-selective device receiving the plurality of diffracted optical beams and controllably transmitting...

20060092996 - Laser wavelength actuators: A laser-emitting device may be coupled to an electro-optically controlled wavelength actuator. An electro-optically controlled wavelength actuator may be a holographic wavelength actuator or a liquid crystal wavelength actuator. The electro-optically controlled wavelength actuator may function as a tunable diffraction grating for external cavity lasers....

20060092997 - Laser beam generating apparatus for a laser scanning unit: A laser beam generating apparatus of a laser scanning unit, including: a laser diode; a collimate lens for converting a laser beam emitted from the laser diode to a parallel light; a collimate lens holder for disposing the collimate lens on an optical axis of the laser beam; a base...

20060092998 - Optical arrangement: An optical arrangement includes a laser, and a chromatic error correcting device arranged in a beam path of the laser. The chromatic error correcting device includes a pulse stretcher....

20060092999 - Semiconductor-laser-pumped solid-state laser apparatus: A semiconductor-laser-pumped solid-state laser apparatus (11) which operates laser oscillation by exciting a solid-state laser medium (1) using a semiconductor laser (2) is described. The semiconductor-laser-pumped solid-state laser apparatus (11) has driving current switching means for switching, in accordance with an external control signal, a driving current between a state...

20060093000 - Multiple-wavelength laser diode and method of fabricating the same: A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that centers of emission points of the three LDs form a line. Also, the multiple-wavelength LD includes a first LD,...

20060093001 - Multiple-wavelength laser diode and method of fabricating the same: A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line....

20060093002 - Hybrid type integrated optical device: A hybrid type integrated optical device has a semiconductor laser mounted on a planar waveguide platform by flip-chip bonding. The optical device comprises a semiconductor laser and a planar waveguide platform. The semiconductor laser includes a first structure, which has an active region and a light emission surface formed on...

20060093004 - Semiconductor laser device and method for manufacturing the same: Provided are a semiconductor laser device and a method for manufacturing the same. The method comprises the steps of: sequentially laminating a first conductivity-type clad layer, an active layer, a second conductivity-type clad layer, and a second conductivity-type cap layer on a substrate; forming a metal film pattern on the...

20060093003 - Semiconductor laser device and process for preparing the same: Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The semiconductor laser device in accordance with the present invention comprises a first clad layer of a first conductivity type...

20060093005 - Semiconductor laser: A semiconductor laser has at least one laser-beam-emitting surface including a multilayer dielectric film composed of layers of different dielectric materials. The multilayer dielectric film has a wavelength dependent reflectance with a maximum or minimum in the vicinity of the oscillation wavelength of the laser. The reflectance of the laser-beam-emitting...

20060093006 - Surface emitting laser device and production method: A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser...

20060093007 - Multi-wavelength semiconductor laser device: A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on...

20060093008 - Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device: To provide surface-emitting type semiconductor lasers that can emit laser light with a high power output and a narrow radiation angle, and methods for manufacturing the same. A surface-emitting type semiconductor laser 200 in accordance with the present invention includes a substrate 101, a first mirror 102 formed above the...

20060093009 - Gas laser device and exposure apparatus using the same: A gas laser device includes a laser gas supplying device in a chamber for supplying a laser gas to an exciting region in the chamber, and an exciting device for exciting the laser gas supplied to the exciting region. The gas laser device controls the laser gas supplying device so...

20060093010 - Surface-emission laser diode operable in the wavelength band of 1.1-1.7 um and optical telecommunication system using such a laser diode: A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with...

20060093011 - Lens structure, optical transmitter, and method for producing same: In one embodiment, a lens structure has an object surface, an image surface, and an axicon mirror. The axicon mirror is defined by an inner diameter, an outer diameter, and a tilt angle, with the tilt angle being defined by a plane of the axicon mirror and the surface of...

20060093012 - Multimode long period fiber bragg grating machined by ultrafast laser direct writing: A multimode long period fiber Bragg grating (LPFBG) for a predetermined wavelength band. The LPFBG formed of a non-photosensitive material having an initial index of refraction. The multimode optical fiber core includes a substantially cylindrical surface, a longitudinal core axis, a core radius, and a number of index-altered portions having...

20060093013 - Laser beam projecting device: A laser beam projecting device, comprising a laser light source for emitting a laser beam, a wavelength selecting film for allowing the laser beam from the laser light source to pass, and a birefringent optical member arranged on an optical axis closer to an exit side than the wavelength selecting...