Coherent light generators inventions 03/06

20060067372 - Apparatus, method, and computer program product for controlling laser wavelength stability: An apparatus includes a laser that generates a predetermined wavelength when the laser operates at room temperature, the predetermined wavelength being offset from a specific wavelength. The laser has a controlled wavelength range due to a wavelength drift, the wavelength range having a first wavelength as the upper boundary and...

20060067373 - Cooling device for radiation sources provided during production of a printing form: A cooling device for radiation sources during production of a printing form includes a metallic layer for conducting an operative current and heat. The radiation sources are formed as a semiconductor substrate and are secured onto the metallic layer. An electrically insulating, heat conducting plate has an upper side to...

20060067374 - Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system: In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with...

20060067375 - Semiconductor laser array and semiconductor laser device having semiconductor laser array: One aspect of the present invention may include a semiconductor laser array, comprising: a substrate; a first laser element on the substrate, the first laser element having a first resonator; a second laser element on the substrate, the second laser element having a second resonator, the second resonator being shorter...

20060056463 - Integrated radiation sources and amplifying structures, and methods of using the same: Integrated radiation source/amplifying structures for use in surface enhanced Raman spectroscopy (SERS) and hyper-SERS are disclosed. The structures include a radiation source integrated with a SERS-active structure that is provided within a resonant cavity. SERS and hyper-SERS systems employing the integrated radiation source/amplifying structures are disclosed. Methods of performing SERS...

20060056464 - Tunable fiber laser light source: A loop is formed with an optical fiber by providing a gain medium having a gain with respect to an oscillation wavelength. Light retrieved by the optical circulator 13 from the optical fiber loop is enlarged and projected to a mirror 23. A diffraction grating 25 is provided with respect...

20060056465 - Laser with reflective etalon tuning element: A tunable laser and laser tuning method based on the use of a tunable etalon in reflection as a mirror within a laser cavity. The laser emission wavelength is not necessarily at a wavelength of peak etalon reflectivity. A preferred embodiment makes use of a microelectromechanical etalon to tune an...

20060056466 - Semiconductor light source with electrically tunable emission wavelength: A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region...

20060056467 - Multi-wavelength laser diode: The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating...

20060056468 - Control system and apparatus for use with ultra-fast laser: A control system and apparatus for use with an ultra-fast laser is provided. In another aspect of the present invention, the apparatus includes a laser, pulse shaper, detection device and control system. A multiphoton intrapulse interference method is used to characterize the spectral phase of laser pulses and to compensate...

20060056469 - Method and device for generating an optical laser pulse: The invention relates to a method for generating optical laser pulses (Po). In order to generate a particularly low-jitter optical signal, an optical injection pulse (I) of a secondary laser (50) is fed into a main laser (30). Feeding is done in such a way that the optical injection pulse...

20060056471 - Laser drive circuit: When a switch SW1 is turned on by an HSYNC signal, a comparison circuit compares an output of a photodiode LD with a reference signal. The comparison result is stored in a capacitor C1. A main scan correction signal, which is supplied from a printer CPU, is formed to decrease...

20060056470 - Diode-pumped solid-state laser with self-maintained multi-dimensional optimization: A diode-pumped solid-state laser (DPSSL) has self-maintained multi-dimensional optimization. The output property of the DPSSL, including optical power, noise level, and the operation conditions of its individual components, including the drive current and temperature of the laser diode, the temperature of the laser crystals and laser cavity, the drive current...

20060056472 - Quantum nano-composite semiconductor laser and quantum nano-composite array: On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on...

20060056474 - Semiconductor light emitting device and method for manufacturing the same: In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a...

20060056473 - Semiconductor light emitting element and method for fabricating the same: A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed...

20060056476 - Laser diode with corner reflector having emission window: A laser diode includes: a reflection layer, an active layer, and a corner reflector which has a shape approximately corresponding to a portion of a cone or pyramid, and is arranged above the active layer with vertex up so that the corner reflector and the reflection layer realize a resonator....

20060056475 - Method of manufacturing an inp based vertical cavity surface emitting laser and device produced therefrom: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the...

20060056477 - Laser diode with a frequency converter: A semiconductor laser diode that internally converts one or more short wavelength “pump” beams to an output beam at a longer wavelength using nonlinear optical frequency conversion in the semiconductor. Modal phase matching of the pump and output beams in a semiconductor waveguide allows the conversion process to proceed with...

20060056478 - Laser gas replenishment method: Output beam parameters of a gas discharge laser are stabilized by maintaining a molecular fluorine component at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is subject to depletion within the discharge chamber. Gas injections including molecular fluorine can increase the partial pressure...

20060056479 - Grating--outcoupled surface-emitting lasers: Laser diodes are formed with an outcoupling grating between two separate distributed Bragg reflectors. The devices have gain regions located between the reflector gratings for pumping the active region. The outcoupling grating couples light out of the waveguide normal to the surface if the grating spacings are equal to an...

20060056480 - Actively stabilized systems for the generation of ultrashort optical pulses: A system and method for generating an optical laser pulse train of constant ultrashort pulse duration and low timing jitter in a fiber ring laser system (resonator) while keeping the laser resonator resilient to environmental conditions like temperature, humidity and pressure. The laser resonator may be actively mode-locked with a...

20060050744 - Enhanced raman amplification and lasing in silicon-based photonic crystals: Tunable laser devices and methods of manufacturing such devices are disclosed. air-holes with defects that form an optical waveguide. The waveguide has a cross-sectional area whose dimensions are in sub-wavelength ranges, wherein the cross-sectional area is perpendicular to the propagation direction of light in the waveguide. The waveguide receives pump...

20060050745 - Method and system for generating ultrashort laser pulses: According to the invention, the wavelength of a laser pulse is once converted to another wavelength by using a nonlinear optical action. A ratio of the intensity at a temporal peak of a pulse to that at a front part thereof is increased. The converted laser light is reconverted by...

20060050746 - System for alternately pulsing energy of accelerated electrons bombarding a conversion target: A RF linear electron accelerator system for generating a beam of accelerated electrons bunched in pulses having different energy spectra from pulse to pulse. The system is operable to generate a beam of high energy X-rays from such beam of accelerated electrons, using a conversion target, with pulses of the...

20060050747 - Frequency-tunable light sources and methods of generating frequency-tunable light: Frequency-tunable light sources and methods of generating frequency-tunable light are described. In one aspect, a frequency-tunable light source includes a resonant optical cavity, an optical gain medium, an optical mode filter, and a mode frequency tuner. The resonant optical cavity supports oscillation of light in at least one longitudinal mode...

20060050748 - Laser device: A laser device that generates a CW laser beam in the ultraviolet range with a wavelength of less than 200 nm by inputting two laser beams having different wavelengths to a nonlinear optical crystal which is, for example, a CLBO crystal, to perform sum frequency mixing, and among the two...

20060050749 - Method and apparatus for generating mid and long ir wavelength radiation: A narrow line width optical parametric oscillator (OPO) (10) is used a pump for a tunable optical parametric oscillator to enable it to produce a mid and long wavelength IR output over a wide 5-20 micron bandwidth. The pumping OPO (10) is then set up to be non-colinearly phase matched....

20060050750 - Hyper dispersion pulse compressor for chirped pulse amplification systems: A grating pulse compressor configuration is introduced for increasing the optical dispersion for a given footprint and to make practical the application for chirped pulse amplification (CPA) to quasi-narrow bandwidth materials, such as Nd:YAG. The grating configurations often use cascaded pairs of gratings to increase angular dispersion an order of...

20060050751 - Optical transmission device for controlling optical level of wavelength multiplexed light and method thereof: An optical level of each wavelength of a wavelength multiplexed light is monitored and the optical level of each wavelength is adjusted so that the above monitored value gets closer to a target value. Further, an optical level of each wavelength after the coupling of the adjusted lights is monitored,...

20060050752 - Optical semiconductor device and optical semiconductor in tegrated circuit: An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a...

20060050753 - Quantum nanostructure semiconductor laser: A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength...

20060050754 - Apparatus and method of establishing optical communication channels between a steerable array of laser emitters and an array of optical detectors: An array of light beam emitter sections comprises: a substrate having a surface divided into an array of sections; and a grouping of light emitters disposed at each surface section and configured to emit light beams at different emission angles with respect to the surface. Also disclosed is apparatus for...

20060050755 - Method for manufacturing vertical cavity surface emitting laser and multiple wavelength surface emitting laser, vertical cavity surface emitting laser, multiple wavelength surface emitting laser, and optical communicating system: A method for manufacturing a vertical cavity surface emitting laser formed by laminating a plurality of layers on a substrate, includes coupling two layers of the plurality of layers by joining at room temperature or joining while heating....

20060050756 - Solid laser excitation module: A solid state laser pumping module (1) is so constructed as to have a plate-shaped non-doped medium (4) having a refractive index close to that of a thin solid state laser medium (3) and having no active material, the non-doped medium being disposed on a surface of the thin solid...

20060045144 - Diode laser array beam homogenizer: A means of achieving a spatially uniform output beam from a laser diode array with minimal design complexity is provided. The means is comprised of one or more optical elements located adjacent to the output of the diode array, the optical element(s) reducing the divergence of the output of the...

20060045143 - Wavelength-locked fiber-coupled diode-laser bar: In apparatus for wavelength stabilizing and spectrally narrowing an output beam of a diode-laser, a cylindrical lens is arranged to collimate the beam in the fast axis of the diode laser without reducing divergence in the slow axis of the diode-laser. An optical fiber is arranged to receive the fast-axis...

20060045145 - Mode-locked laser diode device and wavelength control method for mode-locked laser diode device: The present invention is constructed by an optical pulse generation section 101 including MLLD1, CW light source 19, first optical coupling means 110 and second optical coupling means 112. An optical wave guide 30 which includes an optical gain area 3, optical modulation area 2 and a passive wave-guiding area...

20060045146 - Mode selective semiconductor mirror for vertical cavity surface emitting lasers: A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a first region that is phase matched to...

20060045147 - Focused ion beam heater thermally tunable laser: Platinum (Pt) thin film heaters are deposited by a focused ion beam for semiconductor manufacturing of thermally tunable distributed feedback lasers. An exemplar 1.3 μm InGaAsP/InP laser is integrated with a tuning element having a wide wavelength tuning range of 4.9 nm, that is, 857 GHz, with a small heater...

20060045148 - Low noise, intra-cavity frequency-doubling micro chip laser with wide temperature range: The present invention provides for a low noise, intra-cavity frequency-doubling; diode pumped micro chip laser with wide temperature range comprising pumping diode, gain medium, nonlinear crystal and temperature compensation element. The gain medium pumped by diode generates fundamental wavelength and the nonlinear crystal acts as second harmonic generator. The condition...

20060045149 - Laser scanning device: A laser scanning device that scans a laser beam on a photosensitive surface includes a laser emitting system, a first board mounting the laser emitting system, a laser scanning system configured to receive the laser beam emitted from the laser emitting system and scan the laser beam in a scanning...

20060045150 - Apparatus for modifying co2 slab laser pulses: The quality of pulses output from laser systems such as super-pulsed CO2 slab lasers can be improved using half-wavelength electro-optic modulators (EOMs), in combination with thin film polarizers (TFPs). A voltage applied across a CdTe crystal of the EOM rotates the polarization of a pulse passing through the EOM by...

20060045151 - External cavity wavelength stabilized raman lasers insensitive to temperature and/or external mechanical stresses, and raman analyzer utilizing the same: An external cavity wavelength stabilized laser system including a platform, a laser mounted to the platform with a laser mount, a diffractor mounted to the platform with a diffractor mount, and a lens mounted to the platform with a lens mount between the laser and the diffractor so as to...

20060045152 - Amplified spontaneous emission ducts: Amplified spontaneous emission (ASE) ducts are disclosed for use with various gain media. An ASE duct may be configured and arranged to remove ASE from solid state or liquid gain media and transmit the ASE to an exterior optical medium. The refractive index of an ASE duct is selected as...

20060045153 - Low thermal expansion coefficient cooler for diode-laser bar: A heat sink for cooling a diode-laser bar on a gallium arsenide (GaAs) substrate includes a water-cooled copper body. A layer of a metal having a coefficient of expansion (CTE) about equal to or greater than that of gallium arsenide but less than that of copper is bonded to each...

20060045154 - Diamond heat sink in a laser: A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced nitrogen content, is a reduced carbon-13 content, is a monocrystalline or multilayer low-strain diamond, or has...

20060045155 - Method of fabricating laser diode: Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching...

20060045156 - Semiconductor laser apparatus and manufacturing method thereof: A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN...

20060045157 - Semiconductor laser with expanded mode: Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region. The waveguide layer is configured to expand the optical mode into the layers beneath the active region....

20060045158 - Stack-type wavelength-tunable laser source: A widely wavelength-tunable laser source is provided using stacked tunable diode laser arrays which have different working wavelengths. Top surfaces of the laser arrays are disposed opposite and proximate. A coupling element employs an actuator to couple a beam from the arrays to an output waveguide. The laser source combines...

20060045159 - System and method for maintaining a purity level of a lasing gas: An oxygen diffusion barrier is used to maintain a purity level of lasing gas in a ring laser gyroscope or other gas discharge device. The oxygen diffusion barrier reduces a release of contaminate gases into a cavity of the ring laser gyroscope and/or absorbs the contaminate gases in the cavity....

20060045160 - Method and apparatus for high power amplification in multimode fibers: An apparatus and method for high power amplification in a multimode fiber amplifier. The apparatus includes a diffraction limited low power laser, a multimode fiber amplifier, and a lens. The multimode fiber amplifier is coupled to the low power laser to amplify the low power laser output. The multimode fiber...

20060045161 - Intracavity sum-frequency mixing laser: Provided is a diode-pumped solid-state laser adapted for an intracavity sum-frequency mixing for generating a laser radiation of a visible wavelength range by performing a sum-frequency mixing of two laser inputs in a laser resonant cavity. A pair of laser resonators of two different wavelengths are formed along a common...

20060045162 - Distributed bragg reflector for optoelectronic device: A Distributed Bragg Reflector (DBR) that has relatively low light absorption, relatively low electrical resistance, and/or relatively good thermal conductivity. The DBR may include a first mirror layer and a second mirror layer, with an interface therebetween. A step transition is provided in the aluminum concentration and in the doping...

20060045163 - Fiber amplifier based light source for semiconductor inspection: A laser illuminator for use in an inspection system, such as a semiconductor wafer inspection system or photomask inspection system is provided. The gain medium in the illuminator comprises optical fiber, and amplification, beam splitting, frequency and/or bandwidth conversion, peak power reduction, and q-switching or mode locking may be employed....