Coherent light generators inventions 02/06

20060039417 - Compact system and method for the production of long-wavelength, electromagnetic radiation extending over the terahertz regime: A compact system and method are provided for implementing the generation of electromagnetic radiation extending over mm-wavelength to sub-mm-wavelength or terahertz range. The generated electromagnetic radiation can be broadband or have a variable bandwidth. Electrons are accelerated to a chosen energy and undergo subsequent or simultaneous temporal or spatial compression....

20060039419 - Method and apparatus for laser trimming of resistors using ultrafast laser pulse from ultrafast laser oscillator operating in picosecond and femtosecond pulse widths: The present invention relates to a method and apparatus for laser trimming of resistors in semiconductor applications using ultrafast laser pulse from diode pumped or CW pumped solid state mode locked ultrafast pulse laser oscillator without amplification. The invention disclosed has a means to avoid/reduce the cumulative heating effect to...

20060039418 - Wavelength locked fiber-coupled diode-laser bar: In apparatus for wavelength stabilizing and spectrally narrowing an output beam of a diode-laser, a cylindrical lens is arranged to collimate the beam in the fast axis of the diode laser without reducing divergence in the slow axis of the diode-laser. A length of optical fiber is arranged to receive...

20060039420 - Control for a tunable laser: A control (20) and a method of controlling a tunable laser having a gain section (4), a phase change section (5) and a segmented Bragg grating reflector section (6) comprising a series of grating units (9-17) each of a different pitch, and an electrode (9a-17a) associated with each grating so...

20060039422 - Laser apparatus: A compact and inexpensive laser apparatus capable of obtaining laser beams of multiple wavelengths from a single solid crystal at the same time and excelling in reliability and efficiency is to be provided. A laser apparatus 1 uses a solid crystal consisting of a Raman effect substance as a laser...

20060039421 - Thermally tunable laser with single solid etalon wavelength locker: A thermally tunable semiconductor laser and a wavelength locker are integrated on one single platform. The temperature of the platform, and the semiconductor, and the wavelength locker is actively adjusted by a thermal electrical cooler. The etalon has a free space range of material dispersion compensated according to the refractive...

20060039423 - Light source unit and light irradiation unit: In nonlinear optical crystal 183D, each step of wavelength conversion can be performed using another fundamental wave that is output from light output unit 1612, without using the fundamental wave whose output level has been attenuated after going through wavelength conversion for several steps (wavelength conversion in nonlinear optical crystals...

20060039424 - External cavity laser with multiple stabilized modes: A laser apparatus for providing a stabilized multi mode laser beam includes an external cavity for providing an optical path for generating a laser beam which is stimulated by a gain medium, where the external cavity has first spectral characteristics, and a mode-selecting filter positioned within the optical path and...

20060039426 - Novel ytterbium-phosphate glass: A new ytterbium-phosphate glass and a method for producing the same are disclosed. The glass finds special use in forming laser glass. Previously the level of ytterbium that could be incorporated into a phosphate glass without leading to formation of crystals or devitrification was limited. It has been found that...

20060039425 - Solid-state suspension laser: A solid-state suspension laser. The novel laser includes a gain medium comprised of a plurality of solid-state gain particles suspended in a fluid. The laser also includes a pump source for pumping the gain particles and a resonator for amplifying and outputting laser light generated by the gain medium. In...

20060039429 - Device for bi-directional optical communication and method for fabricating the same: A device for bi-directional optical communication and a method of fabricating the same, whereby a monolithic surface light emitting laser and an optical detector are integrally formed to make a fabricating process simple, and the optical detector is placed about the surface light emitting laser, enabling to carry out light...

20060039430 - Method of fabricating semiconductor device: A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of...

20060039428 - Semiconductor laser device and manufacturing method therefor: In a semiconductor laser device, a first cladding layer (2), a quantum well active layer (3), a second cladding layer (4), and an etching stopper layer (5) are sequentially stacked in this order on a substrate (1). On the etching stopper layer (5) is disposed a striped ridge portion (11)...

20060039427 - Semiconductor laser with integrated heating element and method of manufacturing same: A semiconductor laser structure has a laser active region and side trenches extending along the laser active region. At least one heatable stripe, in at least one of the side trenches, is connected to an electric power source. The amount of energy the source supplies to the stripe controls the...

20060039431 - Quantum cascade laser device: A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at least two regions A and a region B disposed therebetween. The region A includes a plurality of energy levels, and...

20060039432 - Multiple gainnas quantum wells for high power applications: In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 1.3 μm. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a...

20060039434 - Self-monitoring light emitting apparatus: A self-monitoring light source is provided. The self-monitoring light source includes a light source that generates light and a light monitor that receives a portion of the generated light. The light source and the light monitor are manufactured on the same semiconductor die....

20060039433 - Silicon nanocrystal/erbium doped waveguide (snew) laser: A rare earth-doped solid-state integrated laser which includes an optical waveguide, and a laser cavity including at least one subwavelength mirror. The subwavelength mirror is disposed in or on the optical waveguide. The optical waveguide portion within the laser cavity includes active media comprising both a rare earth and semiconducting...

20060039435 - Apparatus for generating light in the extreme ultraviolet and use in a light source for extreme ultraviolet lithography: The device comprises a device (2) for creating an essentially linear target (4) in an evacuated space where laser beams (1) are focused, the target being suitable for interacting with the focused laser beams (1) to emit a plasma emitting radiation in the extreme ultraviolet. A receiver device (3) receives...

20060039436 - Diode-pumped laser: A diode-pumped laser with a direct edge coupling of a pump beam is provided. The laser includes a microchip laser cavity optically pumped by a laser diode emitting an astigmatic pump beam having a substantially elliptical beam cross-section at an output laser diode facet. The microchip laser cavity is disposed...

20060039437 - Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and...

20060039438 - Dual-flow common combustor chemical laser: The invention herein is directed to a dual-chamber combustion laser assembly having lighter weight (per unit flow area), a more compact, flexible configuration for packaging in spacecraft, aircraft, or ground mobile vehicles, higher mass efficiency from lower heat loss and proven power extraction efficiency of linear lasers, superior output beam...

20060039440 - Exciting laser resonators with rf energy: A laser includes an RF generator, a laser resonator and a cable connection provided between the RF generator and the laser resonator. The output impedance respective output and input impedances of two components directly connected by a cable of the cable connection are different. The cable impedance and length of...

20060039441 - Laser emitting module, window cap, laser pointer, and light emitting module: A laser emitting module, a window cap thereof, a laser pointer using the same and a light emitting module are provided. A light emitted from a laser diode excites a solid-state laser medium so as to generate lights of different wavelengths, the wavelength of which is converted in a non-linear...

20060039439 - Total internal reflecting laser pump cavity: A laser device in accordance with the present invention includes a diode pump for generating pump light and a pump cavity for receiving the pump light for conversion into an output laser beam. The pump cavity is formed as a trapezoidal prism, or a prism having bases with trapezoidal perimeters,...

20060029110 - Cavity monitoring device for pulse laser: A fiber laser system is provided with a laser cavity including at least a gain fiber, an output coupling mirror, and a saturable absorber mirror. A photo sensor detects leakage light passing through the saturable absorber mirror, for purposes of monitoring the performance of the laser system. The saturable absorber...

20060029111 - Hybrid high power laser to achieve high repetition rate and high pulse energy: A fiber laser cavity that provides a new pulse shaping and spectral shaping technique is disclosed in this invention to achieve the purpose of resolving the difficulties arising from the issues related to Q-switched solid state lasers. The laser system achieves high repetition rate (1 kHz-100 kHz) and high pulse-to-pulse...

20060029112 - Surface emitting laser with an integrated absorber: A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a...

20060029113 - Method and system for preventing excessive energy build-up in a laser cavity: A method and system decrease the amount of undesired laser radiation reaching a workpiece from a laser having a laser cavity and a Q-switch. The laser operates at any given time in one of at least two modes. In a first mode the laser emits pulses at a PRF (pulse...

20060029114 - Semiconductor laser device: Provided is a semiconductor laser device having an economical structure in which the replacement of a semiconductor laser module is easy and in which the occurrence of dew condensation can be prevented while the increase in the lifetime as well as the stabilization and high output of laser output can...

20060029115 - Optical head with heat sink: An optical head with a heat sink. The optical head includes an optical bench; a laser diode combined with the optical bench; a first heat sink combined with a lower surface of the optical bench; and a second heat sink combined with an upper surface of the optical bench. A...

20060029116 - Dielectric coupled co2 slab laser: A slab laser includes two elongated electrodes arranged spaced apart and face-to-face. Either one or two slabs of a solid dielectric material extend along the length of the electrodes between the electrodes. A discharge gap is formed either between one of the electrodes and one dielectric slab, or between two...

20060029117 - Laser module: A solder-free laser module which comprises at least one laser chip clamp-mounting between electrodes. The laser module includes: some electrodes facing each other and having opposite poles; insulating separators placed between the facing surfaces of the electrodes to prevent direct contact between them and their short-circuiting; laser chips mounted between...

20060029118 - High-power single-mode vertical cavity-surface emitting laser: A vertical cavity-surface emitting laser (VCSEL) for emitting a single-mode laser including a multiple transverse mode VCSEL includes a top emitting region, and a dielectric film covering the top emitting region of the multiple transverse mode VCSEL completely, in order to limit the multiple transverse mode VCSEL to emit the...

20060029120 - Coupled cavity high power semiconductor laser: An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first (“active”) resonator cavity of a high power coupled cavity surface emitting laser device. The reflectivity of...

20060029119 - Tunable external cavity laser diode using variable optical deflector: Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating and a reflective mirror. Since a resonant frequency is changed...

20060023757 - Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers: A mode-locked laser with intracavity frequency conversion is disclosed. In one embodiment the conversion frequency is improved by reducing the temporal, spatial, or polarization overlap between pulses at the fundamental frequency and pulses at a frequency-shifted frequency....

20060023758 - Laser material, laser system and methods: A nonlinear Yb:YAB laser material is disclosed. The material is capable of generating fundamental o-polarized first wavelength laser light and frequency doubled e-polarized second wavelength laser light, the material being oriented for type 1 phase matching of the first wavelength laser light. Also disclosed is a laser system. The system...

20060023759 - Method and apparatus for femtosecond communication: Apparatus and methods for providing a drive laser beam to a communication unit responsive to the drive laser beam provide the communication unit the ability to provide femtosecond communication. In an embodiment, the communication unit may be configured as an emitter to provide an optical signal for multiplexing into a...

20060023760 - Integrated circuit having on-chip laser burn-in circuit: An integrated circuit for providing burn-in current to a laser diode. The integrated circuit includes a laser driver having an output for connection to the laser diode. Burn-in circuitry is formed on the integrated circuit and generates a burn-in current. A switch is formed on the integrated circuit and couples...

20060023761 - Semiconductor laser drive control apparatus: A drive signal for driving a semiconductor laser is generated on the basis of an image signal inputted in synchronism with a pixel clock. A bias signal to the semiconductor laser is generated at a timing earlier than the drive signal by a predetermined time. The bias-signal is disabled in...

20060023762 - Surface-emitting type device and method for manufacturing the same: To prevent electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same. A surface-emitting type device includes a substrate 10, a light emitting element section 20 above the substrate 10, including a first semiconductor section 22 of a first conductivity type, a second semiconductor section...

20060023763 - Semiconductor lasers with hybrid materials systems: A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the...

20060023764 - Semiconductor laser and method of manufacturing the same: In a semiconductor laser according to the present invention, a p-type and n-type semiconductor portion supply positive holes and electrons to a confining layer in a direction perpendicular to a stacking direction of the confining layer, and the p-type and n-type semiconductor portions do not prevent light produced in the...

20060023765 - Semiconductor laser having two or more laser diode portions and a manufacturing method for the same: The semiconductor laser according to the present invention has a substrate used as a shared base, on which an infrared laser diode portion and a red laser diode portion are formed apart from each other. The top surfaces of the laminated layers of the individual laser diode portions have different...