Coherent light generators inventions 12/05

20050286569 - Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using...

20050286570 - Tunable laser with a concave diffraction grating: A tunable laser including an optical gain medium, a diffraction grating, and a tuning mechanism. In general, the optical gain medium is configured to emit a light beam from a front facet and a laser beam from a rear facet. The diffraction grating includes a concave reflective diffractive surface positioned...

20050286571 - Tunable spectroscopic source with power stability and method of operation: A laser system for a spectroscopic catheter system utilizes an overmoded cavity in order to reduce mode hoping induced power fluctuations during wavelength scanning. In the preferred embodiment, a semiconductor gain medium is used to reduce cost. A fiber pigtail is used to define the laser cavity, which has a...

20050286572 - Cesium-rubidium-borate nonlinear optical crystal and its growth method and applications: The present invention provides a cesium-rubidium-borate nonlinear optical crystal, which is represented by the chemical formula CsxRb1-xB3O5 (0<x<1), and belongs to the P212121 space group with the unit cell parameters in the following range: a=8.202-8.514 Å, b=10.075-9.140 Å, c=5.375-6.207 Å and Z=4. A preparation method of the crystal is as...

20050286573 - Low-noise high-power shg laser system: A second harmonic generation laser system comprising: a non-linear frequency converting medium; and an external cavity pump laser that produces optical energy at a single mode and at a single frequency and that is disposed to provide the optical energy to the non-linear frequency converting medium....

20050286574 - Microwave light emitter with a self-pulsating layer: The light emitter comprises a self-pulsating laser (2) producing a self-pulsating signal at a given self-pulsating frequency (fSP) and a modulator device (3) suitable for generating a frequency shift keyed signal (FSP) about a frequency corresponding to a subharmonic (fSP/n) of the self-pulsating frequency of the laser. The modulator circuit...

20050286575 - Control method and control circuit for laser diode, and optical transmitter using the same: A control method for a laser diode is conducted such that optical output and OMA (optical modulation amplitude) or extinction ratio of the laser diode are controlled while modulating the optical output of the laser diode by applying a bias current and a modulation current to the laser diode. The...

20050286576 - Apparatus and method for controlling the power of a laser beam: An apparatus and method for controlling the power of a laser beam is described. In one embodiment a rotatable Brewster element, rotated by a drive means, is disposed in the propagation path of a laser beam and is aligned along the an axis parallel to the direction of propagation of...

20050286578 - Optical transmitter and method for transmitting optical signal: There are provided an optical transmitter and a method for transmitting an optical signal, which realizes an optimum desired temperature arrival time without changing a Peltier element size, a drive current and a drive voltage, and which is stabilized by control having a sufficient phase margin. Different loop filters for...

20050286577 - Solid state laser medium and laser medium heat transfer method: A solid state laser medium comprising at least one cooling element, i.e. cooling element, in contact with and alternating in series with at least one gain element. At least one cooling element and at least one gain element are joined at an interface having a center point, wherein the interface...

20050286580 - Heat-conducting member, laser diode attachment auxiliary member, optical head using the same, and optical recording/reproducing apparatus using the same: The invention relates to a heat-conducting member to conduct heat generated in a laser diode, an optical head using the same, and an optical recording/reproducing apparatus using the same, and has an object to provide a heat-conducting member to conduct heat generated in a laser diode. Besides, the invention has...

20050286579 - Optical subassembly with a heat-radiating fin and an optical transceiver installing the same: The present invention provides a configuration to improve a heat-radiating effect of an optical subassembly having a co-axial package and a pluralilty of lead pins arranged in an arrayed shape. The heat generated inside the subaasembly may be dissipated through the heat-radiating fin attached to a flat surfce, not a...

20050286581 - Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device: A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a retention portion made of an insulative...

20050286582 - Photosemiconductor device: In a TTG-DFB-LD including a MQW wavelength control layer 16 whose refractive index varies by the current injection, the effective forbidden bandwidth of the MQW wavelength control layer 16 is larger by a value in the range of above 40 meV including 40 meV and below 60 meV excluding 60...

20050286586 - Geometric optimizations for reducing spontaneous emissions in photodiodes: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286583 - Obsorbing layers for reduced spontaneous emission effects in an integrated photodiode: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286584 - Optical apertures for reducing spontaneous emissions in photodiodes: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286585 - Photodiode bandgaps for reducing spontaneous emissions in photodiodes: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286589 - Vertical cavity surface emitting laser optimized for optical sensitivity: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench...

20050286587 - Vertical cavity surface emitting laser optimized for thermal sensitivity: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench...

20050286588 - Vertical cavity surface emitting laser with optimized linewidth enhancement factor: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench...

20050286590 - Method of producing multi-wavelength semiconductor laser device: Disclosed herein is a method for producing a multi-wavelength semiconductor laser device. The method comprises the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the nitride epitaxial layer from the substrate; attaching the separated nitride epitaxial layer to a first...

20050286591 - Method of producing multi-wavelength semiconductor laser device: Disclosed herein is a method for producing a multi-wavelength semiconductor laser device. The method comprises the steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from the substrate; attaching the...

20050286592 - Semiconductor laser array device: A semiconductor laser array device for outputting a higher power includes: a plurality of semiconductor laser chips, arranged in a predetermined pitch; a submount for mounting each semiconductor laser chip; and a heat sink for dissipating heat from the semiconductor laser chip through the submount; wherein a distance S between...

20050286593 - Light emitting device with an integrated monitor photodiode: A monolithically formed laser and photodiode. The monolithically formed laser and photodiode includes a Vertical Cavity Surface Emitting Laser (VCSEL) that includes a first PN junction. The first PN junction includes a first p layer and a first n layer. A tunnel diode is connected to the VCSEL both physically...

20050286594 - Mirrors for reducing the effects of spontaneous emissions in photodiodes: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286595 - Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The...

20050286596 - Vertical cavity surface emitting laser diode and process for producing the same: A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated...

20050286597 - Vertical cavity surface emitting laser diode and process for producing the same: A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated...

20050286598 - Laser output beam wavefront splitter for bandwidth spectrum control: An apparatus and method for providing bandwidth control in a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, is disclosed which may comprise a dispersive bandwidth selection optic selecting at...

20050286599 - Method and apparatus for gas discharge laser output light coherency reduction: A method and apparatus for producing with a gas discharge laser an output laser beam comprising output laser light pulses, for delivery as a light source to a utilizing tool is disclosed which may comprise a beam path and a beam homogenizer in the beam path. The beam homogenizer may...

20050286601 - Surface catalyst infra red laser: An energy converter reacts hydrocarbons and air on a catalyst configuration to produce a population inversion. A photovoltaic system may extract the radiating energy, and a laser system may extract a significant fraction of the reaction energy in the form of coherent radiation. The flooding of the catalyst adsorption sites...

20050286602 - Integrated opto-electronic oscillators: Integrated opto-electronic oscillators that use micro resonators in the optical section of the opto-electronic feedback loop....

20050286603 - Thulium laser pumped mid-ir source with broadbanded output: A Thulium laser (15) is used to directly drive a ZnGeP2 optical parametric oscillator (30) with a nominal 2 μm output to generate the 3-5 micron wavelengths. In one embodiment, the ZGP OPO is configured as a linear resonator and in another embodiment the ZGP OPO is configured as a...

20050281297 - Vertical cavity surface emitting laser, telecommunication system and corresponding method: This invention relates to a vertical cavity surface emitting laser (VCSEL) comprising at least one optical element inside the said cavity, the optical element having a variable optical loss profile (44) in a plane perpendicular to an axis of propagation of at least one light beam passing through the said...

20050281298 - Analog external cavity laser: The present invention relates to the analog external cavity lasers (ECLs) including designs, materials, methods of manufacturing and methods of use for such ECLs and packages for such ECLS. Numerous criteria are presented that lead to improved cost/performance for ECLs and for systems incorporating such ECLs....

20050281299 - Semiconductor laser element and method of manufacturing the same: Provided is a semiconductor laser element depositing an insulating film on a p-type cladding layer in which it is possible to prevent bulk deterioration of the semiconductor laser element by suppressing thermal stress caused on a p-type cladding layer. A compound semiconductor multilayer structure is formed by depositing an n-type...

20050281300 - Laser power controller and method for performing auto power control: A laser power controller for performing an auto power control to control the laser power of an optical pick-up unit (OPU) includes: a sample/hold circuit used for sampling and holding a front photodiode output signal to generate an analog feedback signal; an analog-to-digital converter (ADC) electrically coupled to the sample/hold...

20050281301 - Mid-ir microchip laser: zns:cr2+ laser with saturable absorber material: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals...

20050281302 - Yag lasing systems and methods: Lasing systems utilizing YAG and methods for producing a YAG suitable for lasing are provided. The lasing system comprises a laser activator and a laser host material is provided. The laser host material comprises a transparent polycrystalline yttrium aluminum garnet material defined by a low porosity of less than about...

20050281303 - Semiconductor light emitting device and manufacturing method thereof: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a...

20050281304 - Semiconductor laser device and method for fabricating the same: A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding...

20050281305 - Semiconductor based broad area optical amplifier: An optical amplifier including: a photonic gain element; and, a transistor electromagnetically coupled to the gain element to inject current into the gain element responsively to the internal optical intensity of the gain element....

20050281306 - Injection locking type or mopa type of laser device: An injection locking type or MOPA type of laser device capable of always providing stable output energy and wavelength is provided. For this purpose, the laser device includes an oscillator for exciting laser gas by oscillator discharge and oscillating seed laser light with band-narrowed wavelength, an amplifier for amplifying the...

20050281307 - Laser with brayton cycle outlet pump: A chemical oxygen-iodine laser (COIL) comprises an oxygen generator and a nozzle for accelerating generated oxygen to a high or supersonic velocity. A laser cavity is coupled to the nozzle, wherein the accelerated fluid, with injected iodine, is employed as a laser gain medium. A Brayton cycle outlet pump employs...

20050281308 - External cavity dual wavelength laser system: The number and type of quantum wells in a multi-layer gain structure of an external cavity surface emitting laser (VECSEL) are controlled to provide output light of more than one coherent wavelength. The number and type of layers in a multiplayer mirror provides a dual wavelength reflector....

20050281309 - Highly efficient surface emitting laser device, laser-pumping unit for the laser device, and method of manufacturing the laser-pumping unit: Provided are a VECSEL device, which improves optical pumping efficiency by including a mirror reflecting an optical pumping beam, and a method of manufacturing the same. The device includes a lase-pumping unit emitting light having a predetermined wavelength; and a pump laser providing an optical pumping laser beam to the...

20050281310 - Stable/unstable optical cavity resonator for laser: An improved resonator and optical cavity is adapted for use with a chemical laser that has a nozzle upstream of the resonator that emits a gain medium in a flow direction, and a pressure-recovery system downstream of the resonator. The optical resonator comprises first and second optical elements that are...

20050276285 - Actively q-switched laser system using quasi-phase-matched electro-optic q-switch: A Q-switched laser system is disclosed. The laser system employs a quasi-phase-matched electro-optic (QPM EO) crystal as the laser Q-switch. When applied with a certain modulating electric field, the QPM EO crystal can function as a polarization rotator to rotate the polarization direction of the resonant laser beam in a...

20050276286 - Pulsed laser apparatus and method: A laser apparatus for generating optical pulses is disclosed, said laser apparatus has a reflecting gain element preferably including a fiber gain medium. The reflecting gain element is coupled to a controllable reflecting/transmitting module having a reflecting state and a transmitting state, wherein the controllable reflecting/transmitting means are operable to...

20050276288 - Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source: A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting...

20050276287 - Tunable laser light apparatus: A tunable laser light apparatus having one or more optoelectronic devices hosting a number of selectively activatable light outputting sources, and an integrally packaged movable lens, is described herein....

20050276289 - Eye diagram improving method for laser transmitter: A method for calibrating a laser transmitter includes (a) detecting an eye diagram of an output from the laser transmitter, (b) determining if the eye diagram is acceptable, (c) if the eye diagram is not acceptable, changing a value of a control signal in the laser transmitter, wherein the control...

20050276292 - Circuit arrangement for operating a laser diode: The invention relates to a circuit arrangement for operating a laser diode, having: a laser driver, to which a differential input signal is applied and which provides a differential output signal comprising a first output signal and a second output signal that is the inverse of the first output signal,...

20050276291 - Control of spectral content of a laser diode light source: In one exemplary embodiment, apparatus is provided with a plurality of laser diodes, sensing means and control means. During normal operation, the laser diodes produce a mixed light. The sensing means measures light that is output by the laser diodes; and the control means 1) compares the measured light to...

20050276290 - Drive circuit and method of operating a semiconductor laser: A circuit for driving a semiconductor laser, in particular a vertical cavity surface-emitting laser that comprises a differential amplifier for driving the semiconductor laser directly. The semiconductor laser is differentially driven by means of the differential amplifier, a first output of the differential amplifier being direct-current-coupled to a first terminal...

20050276294 - Polyphase diode driver: A driver supplying a total current to a load has a plurality (n) of driver stages (ST1 . . . STn). One stage is a master stage. Each driver stage has a switching device (Q) and an inductor (L) connected in series between the switching device and the output of...

20050276293 - Teratrit processor: An electrical pulse and optical photon multiplying and routing system. The system first uses a method of combining slightly identical electrical pulse signals to create a substantially smaller amount of energy to represent the same electrical signal as before only utilizing a fraction of it's previous space to allow for...

20050276295 - Display device using vertical cavity laser arrays: A display apparatus for producing colored pixelated light includes a backlight unit for producing pump-beam light and a vertical cavity laser array device including a structure for modulating the properties of the device at spaced locations so as to provide an array of spaced laser pixels which have higher net...

20050276296 - Tilted cavity semiconductor device and method of making same: A novel class of semiconductor lasers, or “tilted cavity lasers” includes at least one active element with an active region generating an optical gain by injection of a current and mirrors. The active element is placed into a cavity. The cavity is designed such that the optical path of the...

20050276297 - Optical pickup and optical disk apparatus: An optical pickup includes a laser light source configured to emit laser light, an objective lens configured to focus the laser light emitted from the laser light onto an optical disk, and an image-formation magnification rate varying section for varying an image-formation magnification rate at which the laser light is...

20050276298 - Tuneable unipolar lasers: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end...

20050276299 - Surface-emitting laser, method for manufacturing surface-emitting laser, device and electronic apparatus: The present invention provides surface-emitting lasers that reduce a laser emission angle and are readily manufactured. Methods for manufacturing the surface-emitting lasers, devices, and electronic apparatuses are also described. The lasers are characterized in that a resonator of a surface-emitting laser includes a light emission surface having a portion that...

20050276300 - Laser device using two laser media: A laser device using two laser media includes an excitation light source, a first laser oscillator having a first solid-state laser medium excited by the excitation light source, a second solid-state laser medium disposed in the first laser oscillator and excited by light from the first solid-state laser medium and...

20050276301 - Ingan diode-laser pumped ii-vi semiconductor lasers: A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group...

20050276302 - Distributed feedback laser diode: A semiconductor laser includes an active layer on an n-type InP substrate. A diffraction grating and a p-type InP cladding layer are above the active layer. The diffraction grating has at least one phase shift portion. Facets of the distributed feedback laser each have thereon an antireflective film having a...

20050276303 - External cavity laser: An laser cavity including a special wavelength selection filter is disclosed. The special wavelength selection filter comprises of one or two linear polarizer, two quarter waveplates, an etalon filter and an end reflector. The laser may oscillate on single wavelength or multiple wavelengths depending on the selection of the end...

20050276304 - Optical semiconductor device module and bidirectional module: A semiconductor laser diode optically coupled to an optical fiber, is mounted on a stem. A cap having a light transmissive hole between the optical fiber and the semiconductor laser diode is fixed to the stem. A ball lens is fixed in the light transmissive hole. The ball lens has...

20050271092 - Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer: A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the resonant wavelength of the other cavity or cavities, resulting in a...

20050271090 - Method and unit for setting a wavelength to a tunable laser: When a tunable laser is operating at any one of the different wavelengths, wavelength data is sampled and stored in a memory device. In the case where the same operating wavelength as a wavelength hitherto operated needs to be reset to the tunable laser, the wavelength data stored in the...

20050271091 - Monolithic tunable lasers and reflectors: A wavelength tunable device for operating on at least a portion of energy propagating through a waveguide is disclosed. The wavelength tunable device includes an upper cladding and a lower cladding having a core substantially disposed there between and suitable for optically coupling to the waveguide, a pattern of nanostructures...

20050271089 - Tuneable laser: A tuneable laser including; a light creating section to generate light, the light creating section including a waveguide, and a tuneable section in which there is a waveguide connected to the waveguide in the light creating section, characterised in that the tuneable section waveguide contains a plurality of quantum dots....

20050271094 - Method and apparatus for high power optical amplification in the infrared wavelength range (0.7-20 mum): A novel method for high power optical amplification of ultrashort pulses in IR wavelength range (0.7-20 Ãm) is disclosed. The method is based on the optical parametric chirp pulse amplification (OPCPA) technique where a picosecond or nanosecond mode locked laser system synchronized to a signal laser oscillator is used as...

20050271093 - Method and system for multiplying the repetition rate of a pulsed laser beam: A system and method for increasing a repetition rate of an optical pulse train. The system includes a pulsed source configured to generate the optical pulse train and a cyclic demultiplexer configured to process the optical pulse train and output an output optical pulse train on each of a number...

20050271095 - Pulse control in laser systems: A pulsed laser system includes a laser pump, a laser rod, a reflector interposed between the laser pump and the laser rod, through which energy from the laser pump enters the laser rod, an output reflector through which energy is emitted from the laser rod, a switch interposed between the...

20050271096 - Laser output temperature compensation: A method according to one embodiment includes measuring a temperature of a laser tube. The method may also include generating a feedback signal indicative of the temperature of the laser tube. The method may also include adjusting a power supplied to the laser tube based on, at least in part,...

20050271097 - Laser irradiation method, laser irradiation apparatus, and semiconductor device: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor...

20050271098 - Laser containing a distributed gain medium: A laser device which may be used as an oscillator or amplifier comprising a chamber having a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state elements containing active laser ion distributed within the volume. A cooling fluid flows about the solid-state elements and...

20050271099 - Burst mode transmitter system: An electrical circuit for a transmitter driver system that operates in burst or continuous mode includes a transmitter that generates an output signal in accordance with an input current. Modulation circuitry electrically connected to the transmitter, modulates the input current in accordance with the data signal input into the transmitter...

20050271101 - High speed laser array driver: A method and apparatus for driving lasers. An example laser driving system includes a laser current controller for providing a modulation signal and a bias signal. The modulation signal and bias signal is used by a plurality of high-speed current drivers that accept the modulation signal and the bias signal...

20050271100 - System and method for controlling optical sources, such as laser diodes, and computer program product therefor: A system for controlling operation of an optical source, such as a laser diode for optical communications, by controlling a bias current and a modulation current supplied thereto. With the source there are associated sensors for sensing the radiation generated and the temperature of the optical source to derive therefrom...

20050271102 - Laser driver circuit and system: A method, system, and electrical circuit for determining a magnitude of a modulation current provided to a laser device based upon an approximated slope efficiency, wherein the approximated slope efficiency is based upon at least one discrete incremental change in a bias current to the laser device and at least...

20050271103 - Optical semiconductor device and method for fabricating the same: The optical semiconductor device comprises a lower clad layer 12, optical waveguide layers 14, 16, 18 including an active layer for recombining the carriers. The upper clad layer 20 is mesa stripe configuration having a first mesa portion contacting the contact layer 22 and having a first width, and a...

20050271104 - Semiconductor laser device and method for manufacturing the same: A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a...

20050271105 - Semiconductor light emitting device: A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and...

20050271106 - Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device: A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa...

20050271107 - Semiconductor laser apparatus and manufacturing method thereof: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least...

20050271108 - Semiconductor laser device: A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlxGa1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of...

20050271109 - Very narrow band, two chamber, high rep-rate gas discharge laser system: An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium,...

20050271110 - Excimer laser system with stable beam output: An excimer master-oscillator-power amplifier (MOPA) system includes two laser discharge units (LDUs). Optical modules are associated the LDUs for forming the master oscillator and the power amplifier. The discharge units are each assembled onto a chassis via a vibration-damping suspension. The optical modules are assembled on a frame that is...

20050271111 - High intensity and high power solid state laser amplifying system and method: Systems and methods are provided for achieving high power and high intensity laser amplification. In a four-pass optical amplifying system, a linear polarized optical beam is directed by various optical elements four times through an optical amplifier. The optical amplifier is transversely pumped by a pumping energy source that includes...

20050271112 - Fastening arrangement for a laser pump module: A mounting apparatus includes at least one diode laser pump module having a module bearing surface and connectors on a bearing side of the pump module, a carrier having at least one carrier bearing surface and counter connectors on a bearing side of the carrier, wherein the module is insertable...

20050271113 - High thermal conductivity vertical cavity surface emitting laser (vcsel): A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced...

20050265404 - Luminance enhancement apparatus and method: The present invention provides a luminance enhancement apparatus and method for use with light-emitting elements comprising a conversion system adjacent the light-emitting element for converting electromagnetic radiation of one or more wavelengths to alternate wavelengths. This conversion process can be enabled by the absorption of the one or more wavelengths...

20050265403 - Tunable laser having liquid crystal waveguide: A tunable laser for providing a laser beam with a selectable wavelength. In one example, the tunable laser includes a gain medium for generating the laser beam; a waveguide for processing the laser beam, the waveguide having liquid crystal material or other electro-optic material disposed therein; an optical path length...

20050265402 - Wavelength tunable laser device: A semiconductor optical amplifier, an acousto-optic tunable filter, a phase shifter, a lens, and an internal etalon are arranged in a resonator. Outside the resonator, two lenses, two beam splitters, two photo-detectors, and an external etalon are arranged. The internal etalon is a quartz etalon and the external etalon is...

20050265405 - Broadband light source in particular for short coherence interferometry: The invention relates to an arrangement for generating a broadband spectrum which can bemused in particular as a light source for short coherence interferometry. The arrangement comprises a laser, in particular a laser diode, for generating a short light pulse of wavelength 80 p and a microstructured optical fiber (1)...

20050265407 - Compact semiconductor-based chirped-pulse amplifier system and method: A compact signal source including: a semiconductor-based, pulsed optical energy source for providing a series of pulses at a given frequency; a selector being optical fiber coupled to the pulsed optical energy source and for down-selecting the pulses to a lower frequency; a stretcher being optical fiber coupled to the...

20050265408 - Method of providing consistent quality of target material removal by lasers having different output performance characteristics: Laser pulse energy adjustments are motivated by an understanding of the effect of laser pulse width variations among different lasers on satisfying a quality metric associated with a laser-processed target. In a preferred embodiment, the adjustments normalize this effect among different lasers drilling vias in a target specimen. The number...

20050265406 - Synchronization of lasers and rf sources using timing information transfer in the optical domain: A RF-synchronization system includes a laser that creates pulse trains for synchronization. A modulation means transfers the timing information of the pulse train into an amplitude modulation of an optical or electronic system. A synchronization module changes the driving frequency of the modulation means until it reaches a phase-locked state...

20050265409 - Laser emitting device of optical disc drive: A laser emitting device of an optical disc drive includes a housing having a laser-transmissive portion; a laser-emitting element disposed in the housing for emitting a laser light through the laser-transmissive portion; and a semiconductor substrate integrating therewith a laser sensor and a thermal sensor and disposed in the housing...

20050265410 - Semiconductor laser diode package: Provided is a semiconductor laser diode package. The semiconductor laser diode package may include: a stem having a through hole formed at a predetermined position; a heat sink that may be disposed around the through hole and projects from one side of the stem; and a semiconductor laser diode mounted...

20050265411 - Short wavelength diode-pumped solid-state laser: A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the...

20050265415 - Laser diode and method of manufacture: VCSEL diode comprises a bottom electrode (10), conducting substrate material (11), a bottom mirror (12) formed by a multilayer distributed Bragg reflector (DBR) of certain conductivity and reflectivity RA, and an active region (13) comprising a plurality of layers some of which are quantum wells. It also comprises a top...

20050265413 - Nitride semiconductor laser device: A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light...

20050265412 - Surface emitting semiconductor laser diode and manufacturing method thereof: A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer,...

20050265414 - Surface-emitting type semiconductor laser, and method for manufacturing the same, optical switch, and optical branching ratio variable element: A surface-emitting type semiconductor laser includes a substrate, a first distributed Bragg reflection type mirror formed above the substrate, an active layer formed above the first mirror, a second distributed Bragg reflection type mirror formed above the active layer, and an insulation layer having an opening section that is formed...

20050265416 - Wavelength stabilized laser: A high power light source having an array, bundle or separate plurality of laser diodes coupled to a same number of multimode waveguides to collect beams of light emitted from the of laser diodes is provided. An optical combiner receives the beams of light and combines the beams of light...

20050265417 - Control system for a two chamber gas discharge laser: The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Novel...

20050265418 - Surface-emitting laser with external cavity formed by a waveguide bragg grating: A surface-emitting laser may be coupled to a waveguide that includes a Bragg grating that acts as an external cavity. The surface-emitting laser may be attached using surface mount techniques to the chip containing waveguides. The light of the laser can be coupled into the waveguide using an angled reflector....

20050265419 - Control method of distributed bragg reflection semiconductor laser, and image projecting apparatus: A distributed Bragg reflection (DBR) semiconductor laser is controlled in an image projecting apparatus. The image projecting apparatus includes the DBR semiconductor laser which is provided with a phase region and a DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR semiconductor laser into...

20050265420 - Manufacturable sampled grating mirrors: The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than...

20050265421 - Optically pumped semiconductor ring laser: An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation...