Coating apparatus inventions 08/06

20060191475 - Apparatus for spin coating semiconductor substrates: An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one embodiment, a wafer edge ring is formed using a stereolithography (STL) process. In another embodiment, a...

20060191476 - Coating system for forming protective layer: A coating system using a protective layer forming material includes a coating device which is movable according to information taught by an operator, and disposed adjacent to a transport line for an object to be coated. The coating system includes a roller mechanism having a roller and a cushion mechanism....

20060191477 - Apparatus for the formation of a metal film: An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas...

20060191478 - High density plasma cvd chamber: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a...

20060191480 - Plasma processing apparatus and semiconductor device manufactured by the same apparatus: A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for...

20060191479 - Surface treatment apparatus: The surface treatment apparatus (1) of the present invention comprises a casing (2) partitioned to two chambers, that is, a plasma generating chamber (3) provided with plasma generating electrodes (5, 5′) and a substrate processing chamber (4) provided with a substrate supporting table (8). A plasma vent (6) is formed...

20060191481 - Apparatus for the formation of a metal film: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a...

20060191482 - Apparatus and method for processing wafer: A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor...

20060191483 - Substrate susceptor for receiving a substrate to be deposited upon: This invention includes substrate susceptors which receive substrates to be deposited upon. In one implementation, a substrate susceptor includes a body having a substrate receiving side. The substrate receiving side has a face having a substrate receiving recess formed therein. The recess has an outer peripheral sidewall. At least three...

20060191484 - Chuck pedestal shield: An apparatus for processing semiconductors includes a processing chamber including a plurality of chamber walls, a substrate holder, positioned within the processing chamber and configured to support the substrate, and a linear displacement device, coupled between a base wall of the plurality of walls and the substrate holder and configured...

20060185585 - Ski and snowboard waxing apparatus and method of use: An improved ski and snowboard waxing apparatus and method of use allows a user to more easily and quickly apply a uniform layer of wax to a ski, snowboard, or the like. The wax layer may be applied without the use of specialized tools. Additionally, the wax may be applied...

20060185586 - Powder conveying pump: A powder transfer pump to convey a powder, in particular in a powder coating station. The powder transfer pump comprises a transfer chamber with a transfer chamber wall, an inlet opening into the transfer chamber to supply the powder to the transfer chamber, an outlet opening out of the transfer...

20060185587 - Methods and apparatus for reducing ink conglomerates during inkjet printing for flat panel display manufacturing: In a first aspect, an apparatus is provided for reducing an ink conglomerate during flat panel display manufacturing. The apparatus includes (1) an inkjet head adapted to dispense ink onto a substrate during inkjet printing; (2) an ink reservoir adapted to store ink for inkjet printing and supply the ink...

20060185588 - Vapor deposition apparatus measuring film thickness by irradiating light: A substrate to be processes is accommodated in a process container. A vapor deposition source retains a vapor deposition material to be deposited on the substrate to be processed. A measuring device measures a film thickness of a vapor deposition film produced in said process container. The measuring device measures...

20060185593 - Chemical vapor deposition system and method of exhausting gas from the system: A chemical vapor deposition system is provided. In the chemical vapor deposition system, an amount of a first reaction gas remaining between a process chamber and a first reaction gas supplying unit is exhausted to a vacuum pump, and an amount of a second reaction gas remaining between the process...

20060185590 - High temperature chemical vapor deposition apparatus: Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 10 torr are provided. The apparatus is provided with means for defining a volume space in the...

20060185591 - High temperature chemical vapor deposition apparatus: Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 100 torr are provided. The apparatus is provided with a feeding system having injection means for differential...

20060185589 - Silicon gas injector and method of making: A gas injector tube usable in a batch thermal treatment oven including two silicon shells joined together with an adhesive formed of a fine silicon powder and a curable silica-forming agent, such as a spin-on glass, which is ultrasonically homogenized. The tube may have a gas outlet on its distal...

20060185592 - Vertical batch processing apparatus: A vertical batch processing apparatus is configured to transform a semiconductor oxide film on target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film. The apparatus includes a first process gas supply circuit having...

20060185594 - Plasma treating apparatus and its electrode structure: An electrode structure 30X of a plasma processing apparatus comprises a pair of electrode rows 31X, 32X extending leftward and rightward and opposite to each other in back and forth directions. Each electrode row includes a plurality of electrode members 31A through 32C bilaterally arranged in a side-by-side relation. The...

20060185595 - Apparatus and process for carbon nanotube growth: An apparatus is provided for growing high aspect ratio emitters (26) on a substrate (13). The apparatus comprises a housing (10) defining a chamber and includes a substrate holder (12) attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high...

20060185596 - Vapor phase growth method by controlling the heat output in the gas introduction region: A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power control in a gas introduction region (R1) according to a...

20060185599 - Effusion cell valve: A valve for an effusion cell is disclosed. The valve includes a valve seat having an opening in communication with an interior chamber of a heating crucible. A disk-shaped valve member is axially movable with respect to the valve seat in order to increase or decrease the effective size of...

20060185597 - Film precursor evaporation system and method of using: A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film...

20060185598 - Film precursor tray for use in a film precursor evaporation system and method of using: A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain...

20060185600 - Multi-zone chuck: A multi-zone electrical chuck (100) comprises at least two electrically distinct zones or regions. Each zone is electrically isolated from each other zone, and each zone is capable of being set to a different voltage. During semiconductor manufacturing, voltages may be applied to the zones to affect the growth of...

20060180078 - Gas reaction system and semiconductor processing apparatus: A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction...

20060180079 - Method, system and apparatus for scraping a roll surface in a molten metal coating process: An apparatus for scraping the surface of a sink roll in a molten metal coating process comprises a support member having a pair of linearly movable arms supported thereon. The support member depends from a bridge structure spanning a continuous metal coating line, and a pair or arms, the arms...

20060180080 - Apparatus for thermal spraying: The invention relates to an apparatus for thermal spraying (1) including a spray gun (2) with a burner (3), wherein an operating media (5) can be supplied to the spray gun (2) via a feed line (4), and a base part (6) which is in communication with a supply unit...

20060180081 - Semiconductor manufacturing apparatus having air curtain in door entrance: Disclosed is a semiconductor manufacturing apparatus having an air curtain located in a door entrance thereof. The air curtain is generated by an air curtain generator located in the door entrance of the apparatus. The air curtain typically flows into a discharge pipe located in the door entrance opposite the...

20060180082 - Film formation apparatus: A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film....

20060180083 - Positioning board for positioning heater lines during plasma enhanced cvd (pecvd): A positioning board used in processes of Plasma Enhanced CVD (PECVD) for positioning a heater line on a heater block includes a pressing portion at an underside thereof and a notch is defined in the pressing portion. The heater line is engaged with the notch when the positioning board is...

20060180084 - Substrate susceptor for receiving a substrate to be deposited upon: This invention includes substrate susceptors which receive substrates to be deposited upon. In one implementation, a substrate susceptor includes a body having a substrate receiving side. The substrate receiving side has a face having a substrate receiving recess formed therein. The recess has an outer peripheral sidewall. At least three...

20060180085 - One piece shim: A one-piece or otherwise unitary annular shim member made from a perforated metallic material is used to maintain a space between stacked annular preforms during a manufacturing process, such as densification. The metallic material used preferably can withstand at least the temperatures encountered during densification. The one-piece structure advantageously simplifies...

20060180087 - Substrate susceptor for receiving a substrate to be deposited upon: This invention includes substrate susceptors which receive substrates to be deposited upon. In one implementation, a substrate susceptor includes a body having a substrate receiving side. The substrate receiving side has a face having a substrate receiving recess formed therein. The recess has an outer peripheral sidewall. At least three...

20060180086 - Susceptor and vapor growth device: A susceptor (2) in which a semiconductor substrate (W) is supported approximately horizontally in a pocket (2c) when performing a vapor phase growth of a single crystal thin film on a front surface of the semiconductor substrate (W), and in which the pocket (2c) comprises an outer peripheral pocket portion...

20060174829 - Apparatus for processing substrate: In a substrate processing apparatus for forming thin layers on a substrate used for an organic light emitting diode, the apparatus includes a mask attaching chamber, a deposition chamber and a mask detaching chamber. The mask attaching chamber, the deposition chamber and the mask detaching chamber are provided with a...

20060174828 - Processing system with multi-chamber pump, and related apparatus and methods: Described are apparatus, equipment, systems, architecture, and methods for dispensing one or more process fluids to one or more processing stations, involving the use of at least one a multi-chamber pump, including an embodiment for spin-coating microelectronic or semiconductor substrates....

20060174830 - Surface treatment of a tank wall: The invention relates to a device for positioning and moving a surface treatment device along a wall. The device comprises a crane which can move along a top edge of the wall substantially in the horizontal direction. The crane comprises a crane jib which projects beyond the edge of the...

20060174831 - Paint applicator: An applicator having a handle; a shank coupled to the handle; a first wall coupled to the shank; a second wall coupled to the first wall, the second wall being perpendicular to the first wall; a third wall coupled to the second wall, the third wall being parallel to the...

20060174832 - Substrate processing apparatus: LEDs in an LED display part are arranged so as to have approximately the same placing form as containers. When a chemical solution in a container is exhausted, a corresponding LED of the LED display part lights up. Prior to an operation of replacing the container, an operator allows a...

20060174833 - Substrate treating apparatus and method of substrate treatment: It is intended to efficiently nitride an extremely thin oxide film or oxynitride film of 0.4 nm or less thickness while minimizing a film increase. In particular, oxygen radicals are generated through oxygen radical generating unit so as to oxidize a silicon substrate with the generated oxygen radicals, thereby forming...

20060174834 - Side rf coil and side heater for plasma processing apparatus: A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more...

20060174835 - Vacuum processing apparatus and method of using the same: A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space...

20060174836 - Apparatus for heating wafer: An apparatus for heating a wafer includes a hot plate, formed of, for example, ceramic, which heats the wafer mounted thereon, a case supporting the hot plate, and a fixing unit fixing the hot plate to the case that is located under the hot plate. The fixing unit may include...

20060174837 - Container and exposure apparatus having the same: Disclosed is a container in which at least two structural members, for example, a lid (11) and a body tray (12) having an opening, are welded each other to define an inside space, and in which a sealing material (15) is disposed within the inside space, wherein at least one...

20060169201 - Apparatus for supplying gas and apparatus for forming a layer having the same: In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is...

20060169202 - Coating system: Disclosed is a coating system for the selective application of coatings to substrates to apply a uniform coating to selected areas of the substrate without the need for masking. The system comprises a first coating applicator for coating large areas of the substrate, a second coating applicator for coating small...

20060169203 - Coating machine: An efficient coating machine capable of hardening coating on works in a short hardening time with a small-sized hardening oven at reduced costs. The coating machine has a painting booth, a hardening oven and a work transfer device. The work transfer device has a rotary shaft provided at a center...

20060169204 - Substrate treating apparatus: A substrate treating apparatus includes a process chamber and an exhaust member for exhausting reactive byproducts from the process chamber. The exhaust member includes a first exhaust line perpendicularly connected to the bottom of the process chamber and a second exhaust line branching at an angle from the first exhaust...

20060169205 - Process and related apparatus for block coating: The present invention discloses an apparatus for block type extrusion coating, and a process for forming block coating or grid-type coating on a substrate. The present invention uses a die set composed of an upper mold, a lower mold and a shim therebetween, which can be used to form a...

20060169206 - Load lock system for ion beam processing: A load lock system includes a first load lock defining a first chamber, a second load lock defining a second chamber, and a vacuum pumping system to vacuum pump the first and second chambers. The vacuum pumping system includes a high vacuum pump, a first valve to connect the first...

20060169207 - Semiconductor manufacturing apparatus capable of preventing adhesion of particles: A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the...

20060169208 - Substrate processing apparatus and substrate processing method: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into...

20060169209 - Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method: A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At...

20060169210 - Chamber for uniform heating of large area substrates: Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a chamber having a plurality of processing zones disposed therein that are coupled...

20060169211 - Vapor deposition source and vapor deposition apparatus having the same: A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted...