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Chemical amplification type positive photoresist composition and resist pattern forming methodRelated Patent Categories: Radiation Imagery Chemistry: Process, Composition, Or Product Thereof, Imaging Affecting Physical Property Of Radiation Sensitive Material, Or Producing Nonplanar Or Printing Surface - Process, Composition, Or Product, Radiation Sensitive Composition Or Product Or Process Of MakingChemical amplification type positive photoresist composition and resist pattern forming method description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070117045, Chemical amplification type positive photoresist composition and resist pattern forming method. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of U.S. patent application Ser. No. 10/522,036, filed Jan. 19, 2005, which is the U.S. National Phase under 35 U.S.C. 371 of International Application No. PCT/JP2004/007139, filed May 19, 2004, which claims priority to Japanese Patent Application No. 2003-141805 filed on May 20, 2003, and Japanese Patent Application No. 2003-426503 filed on Dec. 24, 2003, the disclosure of which is incorporated by reference herein. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a novel chemical amplification type positive photoresist composition and relates to a method for formation of a resist pattern. [0004] 2. Description of the Related Art [0005] In the fields of the production of semiconductor devices, liquid crystal displays, printing plates, bumps and magnetic heads, for example, there have hitherto been used a photoresist compositions for g-rays, h-rays and i-rays, comprising an alkali soluble resin and a quinonediazido group-containing compound (photoactive compound: PAC) as a main component; and chemical amplification type photoresist compositions for radiation such as i-rays, KrF, ArF and electron beam, comprising an acid dissociable group-containing compound (resin) and a photo acid generator (PAG) as a main component. [0006] Examples of the chemical amplification type photoresist composition include those described in the following Patent Documents 1 to 3. [0007] Patent Document 1 describes a composition comprising a linear polymer having an acid component and a hydroxyl group, PAG and a compound having at least two specific enol ether groups, the linear polymer and the specific compound being crosslinked by heating. [0008] Patent Document 2 describes a composition comprising a linear polymer having an acid group, PAG and a compound having at least two specific enol ether groups, the linear polymer and the specific compound being crosslinked by heating. [0009] Patent Document 3 describes a composition comprising a partially crosslinked polymer, which is obtained by reacting a hydroxyl group-containing polymer with polyvinyl ether in the presence of an acid catalyst, and PAG. [0010] (Patent Document 1) Japanese Patent Application, First Publication No. Hei 6-148889 [0011] (Patent Document 2) Japanese Patent Application, First Publication No. Hei 6-230574 [0012] (Patent Document 3) Published Japanese Translation No. 2002-529552 of the PCT Application. [0013] Recently, the integration degree of semiconductor devices has increased more and more. [0014] Various proposals have hitherto been made on chemical amplification type resists which contribute to improvement in integration degree of semiconductor devices. [0015] In the following Patent Document 4, there is described a two-component resist comprising a base material resin wherein hydrogen of hydroxyl groups of polyhydroxystyrene having high transparency to a KrF excimer laser beam is substituted with an acid dissociable alkali dissolution inhibiting group, for example, tertiary alkyloxycarbonyl group such as t-boc (tert-butoxycarbonyl) group or acetal group such as 1-ethoxyethyl group, and a photo acid generator as a main component. [0016] A summary of the principle of the resist pattern formation in the resist proposed in Patent Document 4 is as follows. That is, since the base material resin has an alkali dissolution inhibiting group such as t-boc group, alkali solubility is inferior to polyhydroxystyrene having no t-boc group. When such a resin is mixed with a photo acid generator and the mixture is selectively exposed, the t-boc group is dissociated by an action of an acid generated from a photo acid generator at the exposed area to produce polyhydroxystyrene, and thus the resin becomes alkali soluble. [0017] (Patent Document 4) Japanese Patent Application, First Publication No. Hei 4-211258 [0018] (Patent Document 5) Japanese Patent Application, First Publication No. Hei 10-268508 [0019] (Patent Document 6) Japanese Patent Application, First Publication No. 2003-167357 DISCLOSURE OF THE INVENTION [0020] However, the compositions described in Patent Documents 1 and 2 have a problem in that they are inferior in storage stability as a resist solution in a bottle. [0021] Also, the composition described in Patent Document 3 has the following problems. That is, acid catalyst used to prepare a polymer remains in the resist and the composition is inferior in storage stability as a resist solution in a bottle after preparing a resist. [0022] In a first aspect, an object of the present invention is to achieve the object (first object). [0023] Poor storage stability as a resist solution in a bottle refers to poor storage stability after preparing a resist solution, and mainly refers to deterioration of properties such as sensitivity. [0024] According to the technique described in Patent Document 4, regarding alkali solubility of a base material resin upon selective exposure, original alkali solubility of polyhydroxystyrene is recovered by dissociation of a t-boc group due to exposure, and more superior alkali solubility can not be achieved. Therefore, it is insufficient in resolution. The use of an alkali dissolution inhibiting group is likely to cause defects in the case of alkali development. [0025] In Patent Document 5, there is proposed a resist material made of a resin prepared by preliminarily crosslinking a resin comprising a hydroxystyrene unit and a cyclohexanol unit with an ether group. However, the resist material is insufficient because a problem such as defects arises. [0026] Defects refers to scum and general defects of a resist pattern, which are detected when observed from right above the developed resist pattern, using a surface defect detection equipment (trade name: "KLA") manufactured by KLA-TENCOR CORPORATION. [0027] In Patent Document 6, there is proposed a photoresist composition comprising a resin wherein some of the hydrogen atoms of hydroxyl groups of hydroxystyrene are protected with an alkali dissolution inhibiting group such as an acetal group, a photo acid generator and a crosslinking polyvinyl ether compound, and the resin and the polyvinyl ether compound are crosslinked by prebaking and patterning is conducted by subjecting to exposure, PEB (post exposure bake) and development. Since the alkali dissolution inhibiting group is introduced into the resin, the resist composition is insufficient because a problem such as defects arise. Continue reading about Chemical amplification type positive photoresist composition and resist pattern forming method... 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