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Carbon nanotube structure and method of vertically aligning carbon nanotubes

USPTO Application #: 20070082426
Title: Carbon nanotube structure and method of vertically aligning carbon nanotubes
Abstract: A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores. (end of abstract)
Agent: Robert E. Bushnell - Washington, DC, US
Inventors: Yong-Wan Jin, Jong-Min Kim, Hee-Tae Jung, Tae-Won Jeong, Young-Koan Ko
USPTO Applicaton #: 20070082426 - Class: 438099000 (USPTO)
Related Patent Categories: Semiconductor Device Manufacturing: Process, Having Organic Semiconductive Component
The Patent Description & Claims data below is from USPTO Patent Application 20070082426.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

CLAIM OF PRIORITY

[0001] This application makes reference to, incorporates the same herein, and claims all benefits accruing under 35 U.S.C. .sctn.119 from an application for CARBON NANOTUBES STRUCTURE AND VERTICAL ALIGNMENT METHOD OF THE CARBON NANOTUBES earlier filed in the Korean Intellectual Property Office on the 11.sup.th Oct. 2005 and there duly assigned Ser. No. 10-2005-0095497.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a Carbon NanoTube (CNT) structure and a method of manufacturing CNTs, and more particularly, to a CNT structure having CNTs vertically aligned on a substrate and a method of vertically aligning the CNTs.

[0004] 2. Description of the Related Art

[0005] Since the unique structural and electrical characteristics of CNTs were known, CNTs have been used for a variety of devices such as Field Emission Devices (FEDs), back-lights for Liquid Crystal Displays (LCDs), nanoelectronic devices, actuators and batteries.

[0006] FEDs are devices that emit light by emitting electrons from an electron emitting source formed on a cathode and by allowing the electrons to collide with and excite a phosphor layer coated on an anode. Recently, CNTs having excellent electron emitting characteristics have been used as electron emitting sources of FEDs. To manufacture an improved FED, the CNTs used for the electron emitting source should have a low driving voltage and a high emission current. For that purpose, the CNTs need to be vertically aligned on the cathode.

[0007] Methods of aligning CNTs can be divided into a direct growth-aligning method and an after-growth-aligning method. The direct growth-aligning method can realize a high density nano structure where CNTs are aligned very well by Chemical Vapor Deposition (CVD), but has a disadvantage in needing high temperature processing, so that the direct-growth aligning method has great limitations in applications to electronic devices that use the CNTs.

[0008] The after-growth-aligning method includes a method of stacking CNTs through chemical modification of a substrate surface and a method of aligning CNTs using an electric field or a magnetic field. A method has been studied to characterize the surface of a substrate using a variety of lithography processes and selectively arrange CNTs thereon. However, the after-growth-aligning method has difficulty in vertically aligning the CNTs on the substrate. Recently, there has been research with regard to vertically aligning the CNTs on the substrate using chemical bonding through chemical modification of the substrate and the CNTs. However, it has been known that these methods of aligning the CNTs have lots of problems due to the high aspect ratios of the CNTs.

SUMMARY OF THE INVENTION

[0009] The present invention provides a Carbon NanoTube (CNT) structure having CNTs vertically aligned on a substrate and a method of vertically aligning the CNTs.

[0010] According to one aspect of the present invention, a CNT structure is provided including: a substrate; a CNT support layer stacked on the substrate and having a plurality of pores arranged therein; and a plurality of CNTs, one end of each of the CNTs being attached to portions of the substrate exposed through the plurality of pores and lateral sides of each of the CNTs being supported by the CNT support layer.

[0011] A Self-Assembled Monolayer (SAM) including a functional group having a chemical affinity for the plurality of CNTs is preferably arranged on the surface of the substrate, and one end of each of the CNTs is preferably attached to the SAM through the plurality of pores.

[0012] The SAM preferably includes an organic material containing phosphorous. The organic material containing phosphorous preferably includes 2-carboxyethyl phosphoric acid.

[0013] The CNT support layer preferably includes a colloid monolayer including a plurality of self-assembled colloid particles and the plurality of pores are arranged between the colloid particles. The colloid particles preferably include either silica or polystyrene.

[0014] The substrate preferably includes a conductive material. The conductive material preferably includes Indium Tin Oxide (ITO).

[0015] According to another aspect of the present invention, a method of vertically aligning Carbon NanoTubes (CNTs) is provided, the method including: forming a first conductive substrate; stacking a CNT support layer having a plurality of pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through plurality of pores.

[0016] The method preferably further includes forming a Self-Assembled Monolayer (SAM) including a functional group having a chemical affinity for the plurality of CNTs on the surface of the first conductive substrate after its formation. The SAM is preferably formed of an organic material containing phosphorous. The organic material containing phosphorous preferably includes 2-carboxyethyl phosphoric acid.

[0017] Stacking of the CNT support layer preferably includes forming a colloid monolayer including a plurality of self-assembled colloid particles on the SAM, and forming the plurality of pores between the colloid particles. The colloid particles are preferably formed of either silica or polystyrene.

[0018] Attaching one end of each of the CNTs preferably includes: arranging a second conductive substrate spaced a predetermined distance from a surface of the first conductive substrate on which the colloid monolayer has been formed; injecting a dispersion solution to disperse the CNTs between the first and second conductive substrates; attaching one end of each of the CNTs contained in the dispersion solution to the SAM using the plurality of pores formed between the colloid particles by applying an electric field between the first conductive substrate and the second conductive substrate; and removing the dispersion solution with a solvent.

[0019] An anode voltage and a cathode voltage are preferably respectively supplied to the first conductive substrate and the second conductive substrate to produce the electric field.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] A more complete appreciation of the present invention and many of the attendant advantages thereof, will be readily apparent as the present invention becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings in which like reference symbols indicate the same or similar components, wherein:

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