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11/13/08 - USPTO Class 257 | 1 views | #20080277652 | Prev - Next | About this Page

Carbon-containing semiconducting devices and methods of making thereof

Title: Carbon-containing semiconducting devices and methods of making thereof

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20080277652, Carbon-containing semiconducting devices and methods of making thereof.

1. A method of manufacturing a semiconducting device, comprising: forming a first polymer layer over a substrate, wherein the first polymer layer comprises nitrogen and carbon; forming a second polymer layer over the substrate, wherein the second polymer layer comprises aromatic and aliphatic functional groups; pyrolyzing the first polymer layer under substantially nonoxidizing conditions selected to transform the first polymer layer into an n-type semiconducting layer; and pyrolyzing the second polymer layer under substantially nonoxidizing conditions selected to transform the second polymer layer into a p-type semiconducting layer.

2. The method according to claim 1, wherein the first polymer layer is formed over the second polymer layer.

3. The method according to claim 1, wherein the n-type semiconducting layer is in contact with the p-type semiconducting layer.

4. The method according to claim 1, wherein the first polymer layer comprises at least one of polyimide, polyacrylonitrile, polyamide, and polyamideimide.

5. The method according to claim 4, wherein the first polymer layer comprises polyimide.

6. The method according to claim 1, wherein the second polymer layer comprises asphalt or petroleum pitch.

7. The method according to claim 1, wherein the temperature during pyrolysis of the first polymer layer is from about 400° C. to about 1000° C.

8. The method according to claim 1, wherein the temperature during pyrolysis of the second polymer layer is from about 400° C. to about 1000° C.

9. The method according to claim 1, wherein the nonoxidizing conditions comprise a vacuum environment.

10. The method according to claim 1, wherein forming the first polymer layer comprises a wet process.

11. The method according to claim 1, wherein forming the second polymer layer comprises a wet process.

12. The method according to claim 10, wherein the wet process comprises spin-coating and/or dip-coating.

13. The method according to claim 1, further comprising forming a first electrode layer over the substrate and forming the first polymer layer over the first electrode layer.

14. The method according to claim 13, wherein the first electrode layer comprises molybdenum.

15. The method according to claim 1, further comprising forming a transparent conductive electrode layer over the p-type semiconducting layer.

16. The method according to claim 15, wherein the transparent conductive electrode layer comprises indium tin oxide.

17. A semiconducting device, comprising: a substrate; an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising a pyrolyzed carbon- and nitrogen-containing polymer; and a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising a pyrolyzed aromatic- and aliphatic-group-containing polymer.

18. The device according to claim 17, wherein the p-type semiconducting layer is positioned over the n-type semiconducting layer.

19. The device according to claim 17, comprising a p-n junction formed by contact of the p-type semiconducting layer with the n-type semiconducting layer.

20. The device according to claim 17, having a band gap from about 0.1 to about 3.0 eV.

21. The device according to claim 17, wherein the n-type semiconducting layer comprises a pyrolyzed polyimide.

22. The device according to claim 17, wherein the p-type semiconducting layer comprises a pyrolyzed pitch selected from asphalt and a petroleum pitch.

23. The device according to claim 17, wherein the p-type semiconducting layer and the n-type semiconducting layer are formed by pyrolysis under nonoxidizing conditions.

24. The device according to claim 17, further comprising a first electrode layer positioned between the substrate and the n-type semiconducting layer.

25. The device according to claim 17, further comprising a transparent conductive electrode layer positioned over the p-type semiconducting layer.

26. The device according to claim 17, wherein the substrate comprises quartz or fused silica.

27. The device according to claim 17, wherein the device is a solar cell.

28. The device according to claim 17, wherein at least one of the semiconducting layers is less than about 20 micrometers thick.

29. An n-type semiconducting layer made by a process that comprises pyrolyzing a polymer layer, wherein the polymer layer comprises nitrogen and carbon.

30. The n-type semiconducting layer of claim 29, in the form of a film having a thickness from about 20 nanometers to about 40 microns.

31. The n-type semiconducting layer of claim 29, in the form of a film having a thickness of about 20 microns or less.

32. A p-type semiconducting layer made by a process that comprises pyrolyzing a polymer layer, wherein the polymer layer comprises aromatic and aliphatic functional groups.

33. The p-type semiconducting layer of claim 32, in the form of a film having a thickness from about 20 nanometers to about 40 microns.

34. The p-type semiconducting layer of claim 32, in the form of a film having a thickness of about 20 microns or less.

35. A semiconducting device, comprising: a substrate; an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising a pyrolyzed carbon- and nitrogen-containing polymer; and a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising p-type silicon.

36. A semiconducting device, comprising: a substrate; an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising n-type silicon; and a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising a pyrolyzed aromatic- and aliphatic-group-containing polymer.

37. A method of manufacturing a semiconducting device, comprising: forming a first polymer layer over a substrate, wherein the first polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups; forming a second polymer layer over the substrate, wherein the second polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups; pyrolyzing one of the first or second polymer layers under substantially nonoxidizing conditions sufficient to transform the first or second polymer layer into a p-type semiconducting layer; and pyrolyzing the other polymer layer under substantially nonoxidizing conditions sufficient to transform the other polymer layer into an n-type semiconducting layer.

38. The method according to claim 37, wherein the first polymer layer comprises nitrogen and carbon.

39. The method according to claim 37, wherein the second polymer layer comprises aromatic and aliphatic functional groups.

40. The method according to claim 37, wherein pyrolysis to form a p-type semiconductor layer is conducted at a temperature about 400° C. to about 700° C.

41. The method according to claim 37, wherein pyrolysis to form an n-type semiconductor layer is conducted at a temperature about 700° C. to about 1000° C.

42. A semiconducting device made according to the method of claim 37.

43. A method of manufacturing a semiconducting device, comprising: forming a first polymer layer over a substrate, wherein the first polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups; forming a second polymer layer over the substrate, wherein the second polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups; pyrolyzing the first polymer layer under substantially nonoxidizing conditions; measuring to confirm that the first polymer layer is either is an n-type or p-type carrier; pyrolyzing the second polymer layer under substantially nonoxidizing conditions; and measuring to confirm that the second polymer layer is a carrier type that is different than the carrier type of the first polymer layer.

44. A semiconducting device made according to the method of claim 43.

45. A semiconducting device, comprising: a substrate; an n-type semiconducting layer positioned over the substrate, wherein the n-type semiconducting layer comprises (i) a pyrolyzed carbon- and nitrogen-containing polymer or (ii) a pyrolyzed aromatic- and aliphatic-group-containing polymer; and a p-type semiconducting layer positioned over the substrate, wherein the p-type semiconducting layer comprises (i) a pyrolyzed carbon- and nitrogen-containing polymer or (ii) a pyrolyzed aromatic- and aliphatic-group-containing polymer.

46. The semiconducting device according to claim 45, wherein the n-type semiconducting layer comprises nitrogen and carbon.

47. The semiconducting device according to claim 45, wherein the p-type semiconducting layer comprises aromatic and aliphatic functional groups.

48. The method according to claim 11, wherein the wet process comprises spin-coating and/or dip-coating.

Brief Patent Description - Full Patent Description - Patent Claims

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