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  Bump style mems switchUSPTO Application #: 20050263837Title: Bump style mems switch Abstract: A microelectromechanical system switch may be formed with a protrusion defined on the substrate which makes contact with a deflectable member arranged over the substrate. The deflectable member may, for example, be a cantilevered arm or a deflectable beam. The protrusion may be formed in the substrate in one embodiment using field oxide techniques. (end of abstract)
Agent: Timothy N. Trop Trop, Pruner & Hu, P.C. - Houston, TX, US Inventor: Hanan Bar USPTO Applicaton #: 20050263837 - Class: 257415000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors), Physical Deformation The Patent Description & Claims data below is from USPTO Patent Application 20050263837. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND [0001] This invention relates generally to microelectro-mechanical system switches. [0002] Microelectromechanical system (MEMS) switches are mechanical switches that are fabricated using integrated circuit techniques at very small dimensions. Typically, MEMS switches use a tip configuration. The switch may consist of a cantilevered arm extending over a semiconductor substrate. Near the end of the cantilevered arm is a tip with a contact. The tip contact makes an electrical connection when the cantilevered arm is deflected towards the semiconductor substrate so as to electrically touch a contact formed on the substrate. [0003] Other MEMS switches may use a beam instead of an arm. Here, too, a movable element over the substrate includes a protrusion that makes an electrical connection to a contact on the substrate when the beam is electrostatically deflected towards said substrate. [0004] The manufacturing process flow for a tip-based switch may include timed etch steps. In high volume manufacturing, it is not desirable to work with timed etch processes since they may not be repeatable. The constituents that are used, such as acids, may change with time and etched layers may change from batch to batch. In high volume manufacturing, etch stop layers may be utilized to reduce the affect of timed etches. However, the use of etch stops also yields quite sensitive and complex process flows. [0005] Thus, it would be desirable to provide a different type of MEMS switch. BRIEF DESCRIPTION OF THE DRAWINGS [0006] FIG. 1 is an enlarged, schematic view of one embodiment of the present invention at an early stage of manufacture; [0007] FIG. 2 is an enlarged cross-sectional view corresponding to FIG. 1 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0008] FIG. 3 is an enlarged cross-sectional view corresponding to FIG. 2 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0009] FIG. 4 is an enlarged cross-sectional view corresponding to FIG. 3 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0010] FIG. 5 is an enlarged cross-sectional view corresponding to FIG. 4 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0011] FIG. 6 is an enlarged cross-sectional view corresponding to FIG. 5 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0012] FIG. 7 is an enlarged cross-sectional view corresponding to FIG. 6 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0013] FIG. 8 is an enlarged cross-sectional view corresponding to FIG. 7 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0014] FIG. 9 is an enlarged cross-sectional view corresponding to FIG. 8 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0015] FIG. 10 is an enlarged cross-sectional view corresponding to FIG. 9 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0016] FIG. 11 is an enlarged cross-sectional view corresponding to FIG. 10 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; and [0017] FIG. 12 is an enlarged cross-sectional view corresponding to FIG. 11 with the switch closed. DETAILED DESCRIPTION [0018] In accordance with some embodiments of the present invention, a microelectromechanical system (MEMS) switch is formed which uses what may be called a bump configuration. In a bump configuration the protrusion is formed on the substrate and no such protrusion need be formed on the deflectable arm or beam. As used herein, the term "deflectable member" will refer to an extended beam or cantilevered arm that moves relative to the substrate to make and break an electrical contact. While the ensuing description describes a cantilevered type structure, the present invention is applicable to any MEMS switch with a deflectable member. [0019] In some embodiments of the present invention, the use of timed etch steps may be eliminated which may improve repeatability in high volume manufacturing. However, the present invention is not necessarily limited to embodiments that preclude the use of timed etch steps. [0020] Referring to FIG. 1, a semiconductor substrate 10 may be covered by a layer 12, such as silicon nitride, and an opening 14 may be defined therein using conventional techniques such as patterning and etching. The structure may be exposed to a high temperature oxidation to grow the field oxide-like bump 16 shown in FIG. 2, in one embodiment. [0021] Referring to FIG. 3, the remaining layer 12 may be removed and a new isolation layer 15 may be formed, for example, by deposition. In one embodiment, the layer 15 may be deposited and may be an interlayer dielectric (ILD) or a medium temperature oxide (MTO), as two examples. Continue reading... Full patent description for Bump style mems switch Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Bump style mems switch patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Bump style mems switch or other areas of interest. ### Previous Patent Application: Semiconductor device, and method of fabricating the same Next Patent Application: Fingerprint sensor package Industry Class: Active solid-state devices (e.g., transistors, solid-state diodes) ### FreshPatents.com Support Thank you for viewing the Bump style mems switch patent info. IP-related news and info Results in 7.73152 seconds Other interesting Feshpatents.com categories: Novartis , Pfizer , Philips , Polaroid , Procter & Gamble , |
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